Browse - Journal of Vacuum Science & Technology Archives 1964-1982

Select this Article

Auger and photoelectron line energy relationships in aluminum–oxygen and silicon–oxygen compounds

C. D. Wagner, D. E. Passoja, H. F. Hillery, T. G. Kinisky, H. A. Six, W. T. Jansen, and J. A. Taylor

J. Vac. Sci. Technol. 21, 933 (1982); http://dx.doi.org/10.1116/1.571870 (12 pages) | Cited 116 times

Show Abstract

Silicon–oxygen and aluminum–oxygen compounds exhibit significant XPS Auger and photoelectron chemical shifts that are accurately measurable. Chemical state plots of KLL Auger kinetic energy versus 2p photoelectron energy permit identification of chemical species from the locations of their points on the plots. The KLL Auger electrons of Al and Si were generated by the bremsstrahlung component of the radiation, with conventional instrumentation. The location of points on the plots can be understood on the basis of polarizability of the environment (on the Auger parameter grid of lines, slope +1) and on the basis of the factors contributing to the energy of the final state ion in the Auger transition (a grid of line, slope −1). Tetrahedral aluminum has a significantly smaller Auger parameter than octahedral aluminum, and this difference is repeated, but with reduced magnitude on the similar plots for silicon and oxygen lines for the same compounds. Otherwise, the Auger parameters for this class of compounds are remarkably uniform. The Auger parameter values for oxygen and sodium in these compounds, using the 1s and KLL lines, are relatively small compared to those of other compounds of oxygen and sodium. For compounds of similar Auger parameter, differences in Auger final state ion energy are interpretable on the basis of electron density on aluminum and silicon atoms in the initial state, due to extent of bonding to oxygen, or to amount of negative formal charge on the silicate structure. Inclusion of tetrahedral aluminum enhances the negative charge and decreases the final state ion energy in high alumina zeolites. The difference between the energies of the O1s and Si2p lines in the inorganic silicon compounds is almost invariant, 429.0 to 429.6 eV. The three silicon polymers examined have a significantly larger line difference, 429.8 to 430.1 eV, making possible a differentiation between silicones and silicates. The oxygen KVV lines, with Auger transition final vacancies in valence levels, have shapes characteristic of chemical structure. The uncharged Si–O–Si structure exhibits a well‐defined shoulder; in Al–O–Si the shoulder is so close in energy it merely gives rise to asymmetry in the peak; Al–O–Al and charged Si–O–Si give oxygen KVV lines as single sharp peaks.

+

Show PACS

79.20.Fv	Electron impact: Auger emission
79.60.Bm	Clean metal, semiconductor, and insulator surfaces
81.65.-b	Surface treatments

Select this Article

Chlorine and hydrogen chloride on clean and oxygen‐covered Fe(100): Bonding and reactions

N. C. Debnath and Alfred B. Anderson

J. Vac. Sci. Technol. 21, 945 (1982); http://dx.doi.org/10.1116/1.571871 (7 pages)

Full Text: | Download PDF

+

Show Abstract

An ASED molecular orbital study of the binding, structures, and reactions of Cl, Cl₂, HCl, and HCl+O on 4–21 atom clusters in the Fe(100) structure has been made. Cl₂ bonds dissociatively (as seen by Dowben and Jones in LEED and TDS studies). Coverage is limited by σ^@B|_p repulsions; orbitals of this symmetry are occupied by electron donation from iron. We find Cl favors onefold and twofold sites and discuss this unexpected result with perturbation theory. It is suggested that with decreased backbonding from iron to Cl the fourfold site can become favored. There is an absence of experimental or theoretical evidence supporting orbital reoccupations to favor the high‐coordinate site. HCl dissociation is found to occur with a barrier on the surface that is roughly half the gas phase binding energy, leading to stable products. The HCl+O→Cl+OH reaction on the surface is found to be structure sensitive and the reasons are interpretable from molecular orbital theory.

+

Show PACS

68.43.-h	Chemisorption/physisorption: adsorbates on surfaces
82.65.+r	Surface and interface chemistry; heterogeneous catalysis at surfaces
81.05.Bx	Metals, semimetals, and alloys
68.03.Fg	Evaporation and condensation of liquids
68.43.Mn	Adsorption kinetics

Select this Article

Growth and surface properties of lanthanum hexaboride crystals

Toru Inoue, Mitsuru Nakada, Takahiko Uozumi, and Eizi Sugata

J. Vac. Sci. Technol. 21, 952 (1982); http://dx.doi.org/10.1116/1.571872 (5 pages)

Full Text: | Download PDF

+

Show Abstract

Single crystal lanthanum hexaboride (LaB₆) has been grown in a tammann furnace. In the furnace and at 1500 K, lanthanum (La) and boron (B) are melted in proportion to the stoichiometry mass ratio in 30–45 kg/cm² argon atmosphere. When the diffusion time at 1500 K took less, the cubical crystal grew and when it took longer, the needlelike crystal grew. The crystal growing direction was 〈100〉 for both cases. From the etch‐pit observation, this crystal growth has been shown to be stratified along the direction 〈100〉 and therefore the periodic crystal growth has been certified. The height of remolded microprotrusion, which was formed on LaB₆ emitter apex, was about 30 Å and the curvature radius was between 10 and 20 Å. The brightness (B) of the electron beam emitted from this remolded tip was about 1×10¹¹ A ⋅ cm⁻² ⋅ sr. This was unstable, however, because of the random walk of La atoms on the tip. Variation of the work function of platelike LaB₆ tip takes a constant value beyond monolayer formation of O₂ and H₂ on the surface, respectively. Therefore, the LaB₆ emitter is stable even in low quality of vacuum (10⁻⁷–10⁻⁸ Torr). Pyramidlike etch pit has about 30° dip angle. The etching degree defined to be the ratio of x/h was between three and four.

+

Show PACS

81.10.Fq	Growth from melts; zone melting and refining
61.72.Ff	Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.-d	Microscopy of surfaces, interfaces, and thin films
73.30.+y	Surface double layers, Schottky barriers, and work functions

Select this Article

Si incorporation in Al_xGa_1−xAs grown by molecular beam epitaxy

T. J. Drummond, W. G. Lyons, R. Fischer, R. E. Thorne, H. Morkoç, C. G. Hopkins, and C. A. Evans

J. Vac. Sci. Technol. 21, 957 (1982); http://dx.doi.org/10.1116/1.571873 (4 pages) | Cited 10 times

Full Text: | Download PDF

+

Show Abstract

The incorporation of Si in Al_0.25Ga_0.75As was studied as a function of Si cell temperature and substrate growth temperature. Within experimental error, the measured electron concentration was equal to the Si atomic concentration as determined by secondary ion mass spectroscopy. For substrate growth temperatures much above 650 °C, the Si concentration decreased with increasing substrate temperature. This is attributed to a possible decrease in the effective group V/III ratio and evaporation of Si. For Si cell temperatures above 1150 °C, stacking faults in the surface morphology indicated the initiation of Si precipitation. Electron mobilities at room temperature were between 1300 and 600 cm²/Vs, decreasing at higher doping levels. The donor activation energy was observed to increase as a function of both Si cell temperature and substrate growth temperature.

+

Show PACS

61.72.U-	Doping and impurity implantation
61.72.Nn	Stacking faults and other planar or extended defects
68.55.-a	Thin film structure and morphology
61.72.sd	Impurity concentration
61.72.sh	Impurity distribution
61.72.sm	Impurity gradients

Select this Article

Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy

S. L. Su, R. E. Thorne, R. Fischer, W. G. Lyons, and H. Morkoç

J. Vac. Sci. Technol. 21, 961 (1982); http://dx.doi.org/10.1116/1.571874 (4 pages) | Cited 1 time

Full Text: | Download PDF

+

Show Abstract

The influence of buffer thickness on the performance of GaAs metal semiconductor field effect transistors prepared by molecular beam epitaxy is investigated. Little or no looping or light dependence and good transconductances are obtained for devices with buffer thicknesses of 1 μm and greater. For maximum drain saturation resistance and minimum molecular beam epitaxy growth time, buffer thicknesses of 1 to 1.5 μm are indicated. The dependence of field effect transistor performance, as well as observed backgating effects on buffer thickness are attributed to improvements in the quality of both the buffer and active layers. In addition, preliminary results indicate that the saturation characteristics can be improved and looping reduced if the layers are grown at higher temperatures.

+

Show PACS

85.30.Tv	Field effect devices
68.55.-a	Thin film structure and morphology
73.40.Ns	Metal-nonmetal contacts

Select this Article

Clustering and second‐neighbor interactions in semiconductor alloys

W. Porod, D. K. Ferry, and K. A. Jones

J. Vac. Sci. Technol. 21, 965 (1982); http://dx.doi.org/10.1116/1.571875 (4 pages) | Cited 4 times

Full Text: | Download PDF

+

Show Abstract

The virtual‐crystal approximation in the framework of the tight‐binding method is extended to include interactions between unlike second‐nearest neighbors for semiconductor alloys. These interactions are determined by taking the experimentally observed bowing parameters of the energy gap as input information. Conclusions concerning the question of clustering are drawn and compared to experiment.

+

Show PACS

71.20.Nr	Semiconductor compounds
71.20.Ps	Other inorganic compounds

Select this Article

Large grain CdTe thin films on Sb–Bi alloy‐coated Ta substrates

Nicola Romeo and Richard H. Bube

J. Vac. Sci. Technol. 21, 969 (1982); http://dx.doi.org/10.1116/1.571876 (3 pages)

Full Text: | Download PDF

+

Show Abstract

Description is given of the preparation and structural properties of thin CdTe films deposited on two Sb–Bi alloys with compositions of 60% and 70% by weight of Sb on Ta substrates, at temperatures just below that of the melting temperature of the alloys, 380° and 430 °C, respectively. The Sb–Bi alloy films grow with an (003) preferential orientation that matches the (111) plane of CdTe, and are expected to provide low‐resistance Ohmic contacts to p‐type CdTe in solar cell applications. The grain size of the CdTe films was about 2 μm when deposited at 350 °C on the 60% Sb alloy; after vacuum annealing of the deposited film for 10–15 h at 350 °C, the grain size of both the Sb–Bi film and of the CdTe film increased to about 20 μm. With controlled conductivity, CdTe films deposited in this way should make ideal solar cell components.

+

Show PACS

81.15.Lm	Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
84.60.Jt	Photoelectric conversion
73.40.Ns	Metal-nonmetal contacts

Select this Article

Deposition rate dependence of the critical optimization temperature for thin film properties: Evidence for the disordered area reevaporation mechanism

P. S. Vincett

J. Vac. Sci. Technol. 21, 972 (1982); http://dx.doi.org/10.1116/1.571877 (8 pages) | Cited 1 time

Full Text: | Download PDF

+

Show Abstract

A wide variety of inorganic and organic vacuum‐deposited materials have previously been shown to exhibit sharply optimized properties when the condensation (substrate) temperatures T_s are held in a very narrow range near 0.33 of the respective normal boiling points. The optimized properties include many electrical, photoelectrical, optical, and structural parameters, and the immediate cause has been shown to be singularities in the crystallite size and orientation in films formed at the critical temperature T₀. It has been proposed that the underlying mechanism of this critical optimization effect is a new process involving reevaporation of small well‐defined but disordered (amorphous) areas of the film. This mechanism predicts an ∼7.5% change in T₀ for each decade change in deposition rate at typical rates. A definitive check of this prediction is in fact experimentally complicated, and none has previously been attempted. We report here a careful study of the deposition rate dependence of T₀ for a model material, metal‐free phthalocyanine (PC) (chosen because of its lack of stoichiometric complications). The experimental rate dependence of T₀ for PC (18±3 °C for a decade change in rate) is found to be in excellent agreement with the theoretical prediction (∼20 °C). This is good evidence for the disordered‐area reevaporation model. In addition, we discuss in detail the alternative possibility that only conventional surface diffusion factors are at work, and conclude that such mechanisms are not likely to be the explanation. Based on our confirmation of the rate dependence of T₀, we indicate how to calculate T₀ for any appropriate material and deposition rate. Finally, measurements on films whose initial layers were deposited at different values of T_s from the bulk suggest that the disorder which is present for T_s<T₀ is associated with difficulties in establishing the first fully crystalline layers of the film (probably because of the presence of the disordered areas); they also suggest that the shortcomings of films deposited at T_s>T₀ may arise during the later stages of deposition, perhaps because of excessive out‐of‐plane crystallite growth.

+

Show PACS

68.55.-a	Thin film structure and morphology
68.60.-p	Physical properties of thin films, nonelectronic
68.03.Fg	Evaporation and condensation of liquids
68.43.Mn	Adsorption kinetics

Select this Article

The effect of the atomic incident angle upon the microstructure of thick beryllium deposits produced by physical vapor deposition

T. G. Nieh, R. F. Karlak, and A. E. Vidoz

J. Vac. Sci. Technol. 21, 980 (1982); http://dx.doi.org/10.1116/1.571878 (6 pages)

Full Text: | Download PDF

+

Show Abstract

Thick (1–3 mm) beryllium deposits were produced by physical vapor deposition on a carbon‐coated polished 4130 steel substrate at 400 °C and with rates of deposition from 0.1 to 0.3 mm/h. The deposit microstructure was examined by metallographic technique and the characteristics of the growing as well as fracture surfaces by scanning electron microscopy. The texture of the deposits was determined by x‐ray diffraction and correlated with the deposition parameters. The deposits have unique grain and crystalline texture characteristics. They consist of columnar grains with their major axis parallel to the direction of incident adatoms. The self‐shadowing mechanism was not observed to have a prevalent contribution to the development of the microstructure during the growing process. The deposits were found also to be highly oriented with the major axis of their columnar grains, corresponding to the [001] crystallographic direction and always pointing toward the evaporation source. Within the range of deposition parameters that have been analyzed, the deposition rate was shown to have an insignificant effect upon the microstructure and texture characteristics of the deposits.

+

Show PACS

81.10.Bk	Growth from vapor
68.35.-p	Solid surfaces and solid-solid interfaces: structure and energetics
61.66.Bi	Elemental solids

Select this Article

A study of the sputtering of copper–nickel using a combination of techniques

Michael P. Thomas and Brian Ralph

J. Vac. Sci. Technol. 21, 986 (1982); http://dx.doi.org/10.1116/1.571879 (8 pages) | Cited 4 times

Full Text: | Download PDF

+

Show Abstract

Quantitative atom‐probe field‐ion microscopy (APFIM), x‐ray photoelectron spectroscopy (XPS), and qualitative secondary ion mass spectrometry (SIMS) have been applied in a phenomenological study of the modification in surface composition of copper–nickel targets by low energy ion sputtering. In agreement with the bulk of previously reported studies, XPS and SIMS data suggest the preferential loss of copper. APFIM data have revealed that the immediate surface layers remain unchanged in composition while a nickel‐enriched layer is found immediately subsurface. This result is in accord with recent studies using ion scattering spectroscopy.

+

Show PACS

79.20.Rf	Atomic, molecular, and ion beam impact and interactions with surfaces
79.60.Bm	Clean metal, semiconductor, and insulator surfaces

Select this Article

Effect of glow discharge treatment of substrates on parylene‐substrate adhesion

Ashok K. Sharma and H. Yasuda

J. Vac. Sci. Technol. 21, 994 (1982); http://dx.doi.org/10.1116/1.571880 (5 pages) | Cited 5 times

Full Text: | Download PDF

+

Show Abstract

A detailed investigation of the effect of argon, oxygen, and methane glow discharge (plasma) treatment of substrates on the adhesion characteristics of parylene polymer to a variety of substrates is reported. It is found that methane glow discharge treatment, which results in the deposition of a glow discharge polymer of methane on the substrate surface, is most effective in improving the bonding strength of the parylene polymer, while the oxygen glow discharge treatment which produces a hydrophilic substrate surface with no or insignificant polymer deposition is detrimental to parylene adhesion. The effect of argon glow discharge treatment may vary from true cleaning of the substrate surface to deposition of a thin layer of a polymeric coating produced by the simultaneous glow discharge polymerization of the ablated organic materials existing in the reactor and may or may not improve parylene adhesion. These results are supported by the Auger electron spectroscopy and contact angle measurements of the glow discharge‐treated surfaces. Model studies using substrates of different surface free energies indicate that water‐resistant adhesion of parylene polymer increases with the hydrophobicity of the substrate material and is in harmony with the above findings. From the viewpoint of adhesion the most advantageous and dependable effect is obtained with the methane plasma treatment. The treatment results not only in the formation of a more compatible, hydrophobic surface but also produces radical sites for covalent bonding with the parylene.

+

Show PACS

46.55.+d	Tribology and mechanical contacts
81.05.Lg	Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b	Surface treatments
52.40.Hf	Plasma-material interactions; boundary layer effects

Select this Article

Electron‐beam lithography three‐mark silicon automatic registration and its capabilities for process distortion compensation

Eric Tobias and Allen Carroll

J. Vac. Sci. Technol. 21, 999 (1982); http://dx.doi.org/10.1116/1.571881 (6 pages)

Full Text: | Download PDF

+

Show Abstract

Submicron e‐beam lithography requires that successive levels be accurately registered to each previously processed pattern on a wafer. Using a Perkin–Elmer manufacturing electron‐beam exposure system (MEBES)^R, we estimate the ability of an automated three‐mark registration system to correct for distortion created by typical silicon processing. The results show that this registration system is capable of tracking process‐induced distortions typically to within 0.15 μm everywhere on 64‐mm‐diam silicon wafers.

+

Show PACS

85.40.-e

Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Select this Article

Mask fabrication for VLSI using an electron beam exposure system

Y. Watakabe, T. Kato, A. Shigetomi, and H. Morimoto

J. Vac. Sci. Technol. 21, 1005 (1982); http://dx.doi.org/10.1116/1.571852 (7 pages)

Full Text: | Download PDF

+

Show Abstract

This study describes the results of feature size distribution, pattern location accuracy, and level‐to‐level registration error on chrome master masks fabricated by an Ee⁻BES‐40 electron beam exposure system. The system has the capability of high speed electron beam blanking at 40 MHz, the capacity for large size masks (with 6 in. mask cassettes), and an automatic cassette handling system. OEBR‐100 (PGMA), as the electron beam negative resist, is used for 5 and 6 in. chrome masks. Both wet processing and dry plasma technology are used for chrome etching. Test patterns and 64 K DRAM TEG, as the practical pattern, are used in this study. More than 40 measurements are taken, uniformly distributed over 96 and 112 mm squares, and the feature size distribution is measured by a laser interferometer x–y measuring system. Pattern location accuracy and level‐to‐level registration error are obtained using the Ee⁻BES‐40 quality assurance programs called market and plotmarket. market operates by scanning over the resist image of the test pattern, utilizing the normal fiducial mark location hardware. The following results are obtained: (1) Feature size distribution within the 6 in. mask: ±0.1 μm, (2) Level‐to‐level registration error: less than 0.1 μm. High quality masks with about 0.02 defects/cm², and rapid throughput of ten masks in 6 h using the automatic ten cassette handling system are obtained.

+

Show PACS

81.05.Bx	Metals, semimetals, and alloys
85.40.Bh	Computer-aided design of microcircuits; layout and modeling

Select this Article

Intense‐pulsed plasma x‐ray sources for lithography: Mask damage effects

H. A. Hyman, A. Ballantyne, H. W. Friedman, D. A. Reilly, R.C. Southworth, and C. L. Dym

J. Vac. Sci. Technol. 21, 1012 (1982); http://dx.doi.org/10.1116/1.571853 (5 pages) | Cited 2 times

Full Text: | Download PDF

+

Show Abstract

A characteristic of pulsed plasma sources is that each intense x‐ray pulse is of very short time duration, typically ∼1–100 ns. Thermal energy is thus deposited almost instantaneously into the x‐ray mask elements, and since the heat cannot be dissipated in such a short time, the potential exists for damaging the mask. A theoretical analysis has been carried out to examine such mask damage effects and their role in constraining key system parameters (e.g., throughput, resolution). It is shown that the timescale for interpulse cooling by heat conduction in a helium environment is adequate for source repetition rates up to a few hundred pulses per second. Thermal stress‐induced mask failure mechanisms are discussed. Finally, it is concluded that plasma x‐ray sources capable of being repetitively pulsed at rates >1 Hz appear to be promising candidates for high‐resolution, high‐throughput lithography.

+

Show PACS

81.05.Bx	Metals, semimetals, and alloys
65.40.De	Thermal expansion; thermomechanical effects
61.80.Cb	X-ray effects

Select this Article

Silicon nitride single‐layer x‐ray mask

Misao Sekimoto, Hideo Yoshihara, and Takashi Ohkubo

J. Vac. Sci. Technol. 21, 1017 (1982); http://dx.doi.org/10.1116/1.571854 (5 pages) | Cited 40 times

Full Text: | Download PDF

+

Show Abstract

In LP‐CVD process, preparation of silicon nitride film with small tensile stress and low refractive index was investigated as a function of deposition temperature and reactant gas ratio (SiH₂Cl₂/NH₃). The small stress film with low refractive index can be prepared easily by high temperature deposition. Applying the film to an x‐ray mask membrane, a new silicon nitride single‐layer x‐ray mask with a large area window (such as 50 mm in diameter) and high transparency to visible light is realized. Using this mask, a submicron resist pattern (0.5 μm line and space) can be replicated easily by Si–K x‐ray exposure system.

+

Show PACS

81.15.Gh	Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
75.20.Ck	Nonmetals
85.40.Bh	Computer-aided design of microcircuits; layout and modeling

Select this Article

Cryopump regeneration studies

R. C. Longsworth and G. E. Bonney

J. Vac. Sci. Technol. 21, 1022 (1982); http://dx.doi.org/10.1116/1.571855 (6 pages)

Full Text: | Download PDF

+

Show Abstract

A cryopump (APCI Model HV202‐8C) connected to a pump speed test dome was used to evaluate the time and effectiveness of its regeneration using alternate methods of purging and heating the pump. Regeneration effectiveness was determined by measuring the pumping speed and helium adsorption capacity of the charcoal after cool down. The pump was loaded with 8 g of water and 10 std.L of argon prior to regeneration. For all tested regeneration methods the helium speeds were within 80% of the maximum speed. Warm up and evacuation without extra heat or a purge followed by cooling can be done in 4 h and 15 min. Regeneration was accomplished in 2 h and 45 min using a heater on the outside of the housing and a nitrogen purge to bring the cryopump to 310 K, followed by evacuation with a mechanical pump to 100 mTorr without heat or purge, then closing the roughing valve and starting the cryopump. An initial water vapor pressure of 100 mTorr does not increase the cool‐down time compared to a lower starting pressure. Tests with other gases showed that argon and nitrogen have to be pumped below 20 mTorr and hydrogen and helium have to be pumped below 4 mTorr to avoid long delays in cool down.

+

Show PACS

07.30.Bx	Degasification, residual gas
07.30.Cy	Vacuum pumps
07.20.Mc	Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
07.30.Hd	Vacuum testing methods; leak detectors

Select this Article

A fail‐safe automatic vent control for Pfeiffer turbomolecular pumps

J. W. Stayt

J. Vac. Sci. Technol. 21, 1028 (1982); http://dx.doi.org/10.1116/1.571856 (3 pages)

Full Text: | Download PDF

+

Show Abstract

An inexpensive and easily constructed circuit is described which provides fail‐safe automatic venting of turbomolecular pumps regardless of the power shutdown mode. Using Pfeiffer TCF 101 vent control unit, shutdown of the turbomolecular pump will occur with automatic delayed pump venting initiated by a power failure, and with manual venting. This paper describes a circuit modification to add an additional mode, automatic delayed pump venting activated from the front panel on/off switch, to the vent control unit. The circuit requires no additional power supplies and mounts in existing space in the control unit.

+

Show PACS

07.30.Cy

Vacuum pumps

Select this Article

An o‐ring‐sealed rotary feedthrough for UHV applications

A. Pararas, S. T. Ceyer, and J. T. Yates

J. Vac. Sci. Technol. 21, 1031 (1982); http://dx.doi.org/10.1116/1.571857 (1 page) | Cited 2 times

Full Text: | Download PDF

+

Show Abstract

A differentially pumped o‐ring‐sealed rotary feedthrough for ultrahigh vacuum applications is described. Its simplified design results in a significant reduction of machining requirements, compared to previous designs.

+

Show PACS

07.30.Kf

Vacuum chambers, auxiliary apparatus, and materials

Select this Article

Guidelines for construction of low‐pressure gas manifolds

T. C. Paulick

J. Vac. Sci. Technol. 21, 1032 (1982); http://dx.doi.org/10.1116/1.571858 (5 pages) | Cited 2 times

Full Text: | Download PDF

+

Show Abstract

Expressions are obtained for the outflow pattern from the orifices of a gas manifold in the molecular flow regime. The example considered in detail is a section of tubing with identical holes equally spaced along the tube. The manifold is characterized by k, the number of holes, and n, a conductance ratio. Example of outflow patterns for various values of n and k are given. The quantity kn⁻¹^/² emerges as a figure of merit for uniform discharge. A simple experiment supports the usefulness of the model used.

+

Show PACS

47.60.-i	Flow phenomena in quasi-one-dimensional systems
47.55.-t	Multiphase and stratified flows

Select this Article

Precision manipulator heating and cooling assembly compatible with sample transfer

R. A. Outlaw and B. T. Baugh

J. Vac. Sci. Technol. 21, 1037 (1982); http://dx.doi.org/10.1116/1.571859 (2 pages) | Cited 1 time

Full Text: | Download PDF

Abstract Unavailable

+

Show PACS

07.30.Kf	Vacuum chambers, auxiliary apparatus, and materials
06.60.Ei	Sample preparation (including design of sample holders)

Select this Article

Alternate method of measuring ion‐beam‐irradiated areas

A. S. Bhalla and L. L. Tongson

J. Vac. Sci. Technol. 21, 1039 (1982); http://dx.doi.org/10.1116/1.571860 (2 pages)

Full Text: | Download PDF

+

Show Abstract

A decoration technique is suggested for measuring the shape and size of ion beam spots. The method is tested for ⁴He⁺ incident on Gd₂(MoO₄)₃.

+

Show PACS

79.20.Rf

Atomic, molecular, and ion beam impact and interactions with surfaces

Select this Article

Deposition of thin Mylar films by a vacuum thermal evaporation technique

V. Shrinet, U. K. Chaturvedi, S. K. Agrawal, and A. K. Nigam

J. Vac. Sci. Technol. 21, 1040 (1982); http://dx.doi.org/10.1116/1.571861 (3 pages) | Cited 1 time

Full Text: | Download PDF

+

Show Abstract

Mylar films were deposited on ultrasonically cleaned optically flat glass slides and subjected to a ‘‘scotch tape’’ adhesion test.

+

Show PACS

81.15.-z

Methods of deposition of films and coatings; film growth and epitaxy

Select this Article

Optical properties of reactively sputtered Ta₂O₅ films

F. Rubio, J. M. Albella, J. Denis, and J. M. Martinez‐Duart

J. Vac. Sci. Technol. 21, 1043 (1982); http://dx.doi.org/10.1116/1.571862 (3 pages) | Cited 11 times

Full Text: | Download PDF

+

Show Abstract

The optical properties of reactively sputtered Ta₂O₅ thin films are investigated in the 0.25–2.5 μm wavelength range. The dispersion curves for the refraction and absorption indices are obtained from the reflectance and transmittance spectra. From the absorption data, one electronic transition at 4.07 eV and another about 4.5 eV are obtained. Finally, the optical transitions in Ta₂O₅ are discussed.

+

Show PACS

75.20.Ck

Nonmetals

Select this Article

Stress measurement in thin films by geometrical optics

S. M. Rossnagel, P. Gilstrap, and R. Rujkorakarn

J. Vac. Sci. Technol. 21, 1045 (1982); http://dx.doi.org/10.1116/1.571863 (2 pages) | Cited 3 times

Full Text: | Download PDF

+

Show Abstract

A simple variation of the Newton’s rings experiment is proposed for quick, relatively accurate stress measurements. The method involves depositing a thin film on a small circular thin substrate, in this case a common microscope cover slip (18 mm diam × 0.18 mm). The thin film then deforms the cover slip into roughly a paraboloid shape. The focal length of this ‘‘spherical mirror’’ is determined optically by reflecting parallel light from its surface onto a screen. Any magnification or contraction of the image of the film is indicative of distortion of the substrate due to film stress. Such magnification, whether greater or less than 1, immediately determines the sign of the stress. This method described for measuring stresses in the film is simple, fast and inexpensive, requiring only a laser, mirrors and a diverging lens. (AIP)

+

Show PACS

68.55.-a	Thin film structure and morphology
46.80.+j	Measurement methods and techniques in continuum mechanics of solids
68.60.-p	Physical properties of thin films, nonelectronic

Select this Article

Erratum: A photoelectron spectroscopy study of methanol adsorption and oxidation on Ag(111) [J. Vac. Sci. Technol. 20, 887 (1982)]

T. E. Felter, W. H. Weinberg, G. Ya. Lastushkina, P. A. Zhdan, G. K. Boreskov, and J. Hrbek

J. Vac. Sci. Technol. 21, 1047 (1982); http://dx.doi.org/10.1116/1.571864 (1 page)

Full Text: | Download PDF

Abstract Unavailable

+

Show PACS

68.43.-h	Chemisorption/physisorption: adsorbates on surfaces
82.20.Pm	Rate constants, reaction cross sections, and activation energies
79.60.Bm	Clean metal, semiconductor, and insulator surfaces
81.05.Bx	Metals, semimetals, and alloys
99.10.Cd	Errata

Select this Article

Erratum: Welch Memorial Lecture: Preparation, structural characterization, and properties of atomically clean surfaces [J. Vac. Sci. Technol. 20, 271 (1982)]

H. E. Farnsworth

J. Vac. Sci. Technol. 21, 1047 (1982); http://dx.doi.org/10.1116/1.571865 (1 page)

Full Text: | Download PDF

Abstract Unavailable

+

Show PACS

01.60.+q	Biographies, tributes, personal notes, and obituaries
61.05.jh	Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
81.65.-b	Surface treatments
82.65.+r	Surface and interface chemistry; heterogeneous catalysis at surfaces
99.10.Cd	Errata

Select this Article

The Chemical Physics of Solid Surface and Heterogeneous Catalysis, Volume I–Clean Solid Surfaces edited by D. A. King and D. P. Woodruff

G. A. Somorjai

J. Vac. Sci. Technol. 21, 1048 (1982); http://dx.doi.org/10.1116/1.571866 (1 page)

Full Text: | Download PDF

Abstract Unavailable

+

Show PACS

01.30.Ee	Monographs and collections
68.35.-p	Solid surfaces and solid-solid interfaces: structure and energetics
82.65.+r	Surface and interface chemistry; heterogeneous catalysis at surfaces
61.05.J-	Electron diffraction and scattering

Select this Article

MOS (Metal Oxide Semiconductors) Physics and Technology by E. H. Nicollian and J. R. Brews

H. H. Wieder

J. Vac. Sci. Technol. 21, 1048 (1982); http://dx.doi.org/10.1116/1.571867 (2 pages)

Full Text: | Download PDF

Abstract Unavailable

+

Show PACS

01.30.Ee	Monographs and collections
85.30.De	Semiconductor-device characterization, design, and modeling
84.32.Tt	Capacitors
85.40.-e	Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology