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Nov 1976

Volume 13, Issue 6, pp. 1131-1212


Adhesion study of silver films deposited from a hot hollow‐cathode source

E. R. Naimon, D. Vigil, J. P. Villegas, and L. Williams

J. Vac. Sci. Technol. 13, 1131 (1976); http://dx.doi.org/10.1116/1.569089 (4 pages)

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A study of the adhesion of silver films deposited from a hot hollow cathode source was undertaken. The coating process consisted of two stages: an ’’ion‐bombardment’’ cleaning phase followed (continuously) by a vapor deposition phase. Effects of four process parameters were investigated: chamber pressure; substrate bias during ion bombardment; substrate current during ion bombardment; and duration of the ion bombardment. Substrate materials investigated were beryllium and aluminum tensile coupons. Pairs of coated coupons were subsequently solid‐state bonded and then tensile tested. Tensile strength data provided a measure of the silver film adhesion, as well as a measure of the integrity of a solid‐state joint. ’’Thresholds’’ of total ion bombardment energy have been established for ensuring minimum adhesion strengths of approximately 0.28 GPa (40 000 psi) for silver on beryllium and aluminum.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
46.55.+d Tribology and mechanical contacts

Sputtered insulator film contouring over substrate topography

T. N. Kennedy

J. Vac. Sci. Technol. 13, 1135 (1976); http://dx.doi.org/10.1116/1.569090 (3 pages) | Cited 3 times

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Coverage of metal line patterns with rf‐sputtered SiO2, Si3N4, and Al2O3 has been investigated. The variation of step coverage with the degree of film resputtering has been studied using optical and scanning electron microscopy of both fractured and polished sections. The observed contouring is controlled by the geometry of the substrate topography and the amount of resputtering of the depositing material. Resputtering was controlled during deposition by applying rf bias voltage to the substrate electrode.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.35.Md Surface thermodynamics, surface energies

Preparation and characterization of ultrathin Pb and In films on PbTe and Te

D. L. Miller

J. Vac. Sci. Technol. 13, 1138 (1976); http://dx.doi.org/10.1116/1.569091 (6 pages) | Cited 1 time

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Ultrathin 10–300‐Å films of Pb and In have been prepared by evaporation in ultrahigh vacuum onto single crystal PbTe and Te substrates at low temperatures. Epitaxial growth was obtained for both metals deposited on PbTe (100) at 77 K, but not on Te (101̄0). Low energy electron diffraction, Auger electron spectroscopy, and low energy electron energy loss measurements were used to characterize substrates and films. Values of low energy electron escape depths through Pb, In, and PbTe were also obtained.
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68.55.-a Thin film structure and morphology
74.78.-w Superconducting films and low-dimensional structures

Auger spectroscopic study of nickel films on Pyrex

B. A. Sexton, B. G. Baker, and R. A. Armstrong

J. Vac. Sci. Technol. 13, 1144 (1976); http://dx.doi.org/10.1116/1.569092 (8 pages) | Cited 1 time

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The surface compositions of vacuum‐evaporated nickel films are analyzed by Auger electron spectroscopy. The Auger tube was constructed principally of Pyrex glass and the film deposition conditions are typical of those in Pyrex UHV systems. It is shown that clean nickel surfaces can be produced at temperature 78–450 K provided the following precautions are taken: (i) the evaporation filament is subjected to a preliminary slow‐evaporation in a separate vacuum system; (ii) the vacuum is maintained at less than 10−9 Torr (10−7 Pa); (iii) the film substrate is freshly flamed and washed, and glassblowing is not subsequently done near the film substrate. Failure to meet condition (i) results in contamination by carbon and possibly sulphur; failure of (ii) results in contamination by carbon and possibly oxygen; and failure of (iii) results in contamination by boron and carbon. The impurities carbon and boron are found to have high mobility above ambient temperature. They migrate to the surface of any fresh nickel film deposited over a contaminated substrate.
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68.60.-p Physical properties of thin films, nonelectronic
68.35.Md Surface thermodynamics, surface energies
81.10.Bk Growth from vapor
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Evaluation of ’’barrier’’ metals for sintered platinum–GaAs contacts

J. J. Berenz, G. J. Scilla, V. L. Wrick, L. F. Eastman, and G. H. Morrison

J. Vac. Sci. Technol. 13, 1152 (1976); http://dx.doi.org/10.1116/1.569093 (6 pages) | Cited 2 times

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Tungsten, titanium, molybdenum, and hafnium are evaluated as ’’barrier’’ metals for preventing gallium (Ga) and arsenic (As) out‐diffusion from sintered Pt–GaAs contacts. Secondary ion mass spectrometry (SIMS) and x‐ray diffraction are employed to qualitatively assess the extent of interdiffusion and intermetallic compound formation which occur in these contacts as a result of heat treatment. In spite of the complex nature of the metallurgical reactions and despite inherent limitations in the analysis, tungsten and hafnium are clearly shown to be effective in preventing Ga and As out‐diffusion from sintered Pt–GaAs contacts.
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73.40.Ns Metal-nonmetal contacts
66.30.-h Diffusion in solids
68.60.-p Physical properties of thin films, nonelectronic

Factors which maximize the efficiency of Cr–p‐Si Schottky (MIS) solar cells

W. A. Anderson, S. M. Vernon, A. E. Delahoy, J. K. Kim, and P. Mathe

J. Vac. Sci. Technol. 13, 1158 (1976); http://dx.doi.org/10.1116/1.569094 (4 pages) | Cited 7 times

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Processing steps used in fabricating silicon Schottky solar cells have been evaluated to optimize energy conversion efficiency. Factors such as wafer resistivity and orientation, etching, oxide growth, heat treatment, depostiion technique, and grid design are included in the study. The proper heat treatment and metal deposition rate are most crucial in achieving a high open‐circuit voltage. The process has produced a solar cell with Voc=0.55 V, fill factor of 0.71, and 8.6% AM1 efficiency with a potential improvement to 12.5%.
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84.60.Jt Photoelectric conversion
85.30.Hi Surface barrier, boundary, and point contact devices
85.60.Dw Photodiodes; phototransistors; photoresistors
73.30.+y Surface double layers, Schottky barriers, and work functions

Limitations of kinetic studies of catalytic reactions on a single‐crystal surface at low pressures in a UHV system

Ch. Steinbrüchel and G. A. Somorjai

J. Vac. Sci. Technol. 13, 1162 (1976); http://dx.doi.org/10.1116/1.569061 (4 pages) | Cited 1 time

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We present an analysis of the kinetics of catalytic reactions occuring on a small area (∠1 cm2), single‐crystal surface in an UHV system at low pressures (10−8–10−4 Torr). We find that one can measure reaction probabilities as low as 10−4 under flow conditions and 10−7 under batch conditions. For the purpose of illustration we give two practical examples: hydrogenolysis of isobutane and dehydrogenation of cyclohexane on platinum surfaces.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Vacuum preparation of pure cesium by electrolysis of glass

Derek F. Klemperer and Ian Mackenzie

J. Vac. Sci. Technol. 13, 1166 (1976); http://dx.doi.org/10.1116/1.569062 (6 pages)

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A method is described for metering up to about 10 mg of pure Cs into a vacuum system. The Cs is electrolyzed out of a Cs2O‐containing glass in contact with molten CsNO3. Experimental evidence shows that less than 1% of the Cs lost from the glass is replaced by diffusion from the salt melt. However, in absence of the melt, Cs ion currents rapidly decay. Using melt, the glass shatters after about 20% of its Cs content has been electrolyzed away. The conduction process is characterised by 137Cs tracer experiments and current–temperature data involving a number of alkali salts. The salt, which does not have to be molten, probably supplies alkali cations to the surface region of the glass, where negative charges on silicate groups accumulate under influence of the electric field. Some decomposition of the glass occurs during electrolysis with the formation of silica.
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82.45.-h Electrochemistry and electrophoresis
68.55.-a Thin film structure and morphology
07.30.-t Vacuum apparatus
52.25.Fi Transport properties

Influence of thermal radiation on the vapor pressure of condensed hydrogen (and isotopes) between 2 and 4.5 K

C. Benvenuti, R. S. Calder, and G. Passardi

J. Vac. Sci. Technol. 13, 1172 (1976); http://dx.doi.org/10.1116/1.569063 (11 pages) | Cited 12 times

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Hydrogen molecules, physisorbed or condensed on cryosurfaces at liquid‐helium temperatures, can be desorbed by thermal radiation. The probability of the process depends on the nature of the cryosurface, the degree of H2 coverage, and the spectrum of the radiation. For a given spectrum the desorption rate is proportional to radiation intensity, and, with a few exceptions, to the absorptivity of the cryosurface. The desorption efficiency of the absorbed 300‐K radiant energy is approximately 7×10−6 for most of the 20 bakeable cryosurfaces tested. A decrease of radiation temperature below 130 K causes a progressive reduction of the desorption efficiency which amounts to a factor of three at 80 K. This variation of efficiency can be fitted to a curve obtained by assuming that a threshold wavelength for desorption exists in the radiation spectrum at 45 μm. The energy carried by a photon of this threshold wavelength is about three times that required for the desorption of a condensed H2 molecule. Precondensed sublayers of heavier gas also introduce a decrease of the desorption efficiency in the following order: HD; D2; Ne; and Ar, N2, Kr. For the last three gases the desorption efficiency is practically constant and independent of the substrate and the radiation temperature. Similar observations for the H2 isotopes, HD and D2, are also reported. A physical model for the desorption process and its agreement with the results obtained here is discussed.
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67.25.bh Films and restricted geometries
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
07.30.-t Vacuum apparatus
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment

On the transmission probability for molecular gas flow through a tube

D. van Essen and W. Chr. Heerens

J. Vac. Sci. Technol. 13, 1183 (1976); http://dx.doi.org/10.1116/1.569064 (5 pages) | Cited 3 times

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Starting with the fundamental theory of Knudsen about molecular gas flow through orifices and especially through circular cylindrical tubes, several investigators have derived formulas for the calculation of the transmission probability. Here the equations of Knudsen, Dushman, Clausing, De Marcus, Berman, and, very recently, Nawyn and Meyer are compared. For very accurate calculations the calculation method of Nawyn and Meyer must be used. If accuracies of 0.1% are adequate, the simple equations of Berman can be used.
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47.45.Dt Free molecular flows

Poiseuille flow and thermal creep flow in long, rectangular channels in the molecular and transition flow regimes

S. K. Loyalka, T. S. Storvick, and H. S. Park

J. Vac. Sci. Technol. 13, 1188 (1976); http://dx.doi.org/10.1116/1.569065 (5 pages) | Cited 10 times

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The theoretical Poiseuille flow and the thermal creep flow for rarefied gases in a long, rectangular channel are computed using the BGK model of the Boltzmann equation and diffuse scattering from the walls. These results are compared with available experimental data for Poiseulle flow. The present work provides a way to compute flow in a rectangular channel that is estimated to be accurate to ±5% for common gases.
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47.45.Gx Slip flows and accommodation
47.45.Dt Free molecular flows

Substrate surface contamination from dark‐space shielding during sputter cleaning

G. J. Kominiak and J. E. Uhl

J. Vac. Sci. Technol. 13, 1193 (1976); http://dx.doi.org/10.1116/1.569066 (2 pages) | Cited 1 time

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Soft x‐ray appearance spectroscopy is used to monitor nickel contamination levels in an iron substate during glow discharge sputter cleaning, most severe surface contamination is introduced from an electrically floatting stainless steel shield during dc sputter cleaning. Grounding the shield minimizes the contamination and rf sputtering virttually eliminates it.(AIP)
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68.35.Md Surface thermodynamics, surface energies
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
06.60.Ei Sample preparation (including design of sample holders)
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Depth profiling unit

H. M. Windawi

J. Vac. Sci. Technol. 13, 1195 (1976); http://dx.doi.org/10.1116/1.569067 (1 page)

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Abstract Unavailable
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68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
82.80.-d Chemical analysis and related physical methods of analysis

Use of a Vidicon camera for the measurement of LEED beam intensities by the photographic method

D. C. Frost, K. A. R. Mitchell, F. R. Shepherd, and P. R. Watson

J. Vac. Sci. Technol. 13, 1196 (1976); http://dx.doi.org/10.1116/1.569068 (3 pages) | Cited 10 times

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Abstract Unavailable
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61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.49.Jk Electron scattering from surfaces

Bakeable UHV gate valve for microwave tube experimentation

A. S. Gilmour

J. Vac. Sci. Technol. 13, 1199 (1976); http://dx.doi.org/10.1116/1.569069 (3 pages) | Cited 1 time

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Abstract Unavailable
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07.30.Kf Vacuum chambers, auxiliary apparatus, and materials
84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)

Satellite vacuum system for a standard LEED–AES system with sample transfer capability

Charles A. Crider, Gerardo Cisneros, Peter Mark, and Jules D. Levine

J. Vac. Sci. Technol. 13, 1202 (1976); http://dx.doi.org/10.1116/1.569070 (4 pages) | Cited 5 times

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Abstract Unavailable
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73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)
07.30.-t Vacuum apparatus

Erratum: ''Sputter sectioning of diffusion specimens'' [J. Vac. Sci. Technol. 13, 1104–1107 (1976)]

R.A. Perkins and R.A. Padgett

J. Vac. Sci. Technol. 13, 1206 (1976); http://dx.doi.org/10.1116/1.569071 (1 page)

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Abstract Unavailable
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43.10.Vx Errata
66.30.Fq Self-diffusion in metals, semimetals, and alloys
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.-d Chemical analysis and related physical methods of analysis

Surface Physics of Phosphors and Semiconductors, edited by C. G. Scott and C. E. Reed. Reviewer

Peter Mark

J. Vac. Sci. Technol. 13, 1209 (1976); http://dx.doi.org/10.1116/1.569072 (3 pages)

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Abstract Unavailable
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01.30.Vv Book reviews

Benchmark Papers of EnergyEnergy: Historical Development of the Concept, edited by R. Bruce Lindsay. Reviewer

Roland E. Thomas

J. Vac. Sci. Technol. 13, 1211 (1976); http://dx.doi.org/10.1116/1.569073 (2 pages)

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Abstract Unavailable
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01.30.Vv Book reviews
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