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May 1977

Volume 14, Issue 3, pp. 769-844


Vacuum‐deposited CuInTe2 thin films: Growth, structural, and electrical properties

L. L. Kazmerski and Y. J. Juang

J. Vac. Sci. Technol. 14, 769 (1977); http://dx.doi.org/10.1116/1.569265 (8 pages) | Cited 28 times

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The growth, structural, and electrical characterization of vacuum‐deposited n‐ and p‐type CuInTe2 thin films utilizing a high‐evaporation‐rate technique (≳100 Å/s) are reported. Complementary transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) are used to investigate the films’ crystalline (grain size, orientation, structure) and compositional (elemental) properties. The effects of substrate temperature on these quantities are presented. A substrate temperature range (400<Tsub<525 K) has been identified for the growth of single phase, chalcopyrite CuInTe2 thin films which have a preferred (112) orientation. Selected area diffraction and Auger analyses have detected Te inclusions at low Tsub and In inclusions for Tsub≳525 K. Annealing of the films in argon is used to increase grain size from ∠1000 Å for as‐deposited films to the 2000–6000 Å range. The as‐deposited films have characteristically high resistivities, in excess of 103 Ω cm. The effects of a low‐temperature (673 K) annealing procedure on the films’ electrical characteristics are indicated and are correlated with the corresponding structural changes. The temperature dependences of the mobilities, conductivities, and carrier concentrations of both n‐ and p‐type annealed films are presented and explained in terms of a grain‐boundary scattering mechanism. Film mobilities, μn∠20–30 cm2 V−1 s−1 and μp∠5–12 cm2 V−1 s−1 have been measured. The majority‐carrier type is found to depend on Tsub for these vacuum‐deposited ternary films, and a range, 443<Tsub<463 K, has been identified over which the change from n (lower Tsub) to p (higher Tsub) occurs.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Study of calcia‐stabilized zirconia thin‐film sensors

M. Croset, P. Schnell, G. Velasco, and J. Siejka

J. Vac. Sci. Technol. 14, 777 (1977); http://dx.doi.org/10.1116/1.569266 (5 pages) | Cited 7 times

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The ionic transference number of rf‐sputtered calcia‐stabilized zirconia (CSZ) thin films has been investigated, using the Nernst method, in the 300 °–400 °C temperature range and between 10−4 and 2×10−1 atm of oxygen partial pressure. E.M.F. measurements at 342 °C on Ni–NiO/CSZ/Pt–O2 galvanic cells show a voltage roughly 5% lower than the theoretical value and an ionic transference number of about 0.85. Possibilities of such cells being used as oxygen sensors were estimated. Rise times typically observed between 10−3 and 10−2 atm of oxygen were approximately 4 min at 280 °C and 5 s at 420 °C. The influence of Pt deposition parameters on the response speed is pointed out.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
81.15.Cd Deposition by sputtering
82.45.-h Electrochemistry and electrophoresis

Some investigations on deposition and etching profiles in masked rf sputtering

B. L. Sopori and W. S. C. Chang

J. Vac. Sci. Technol. 14, 782 (1977); http://dx.doi.org/10.1116/1.569267 (4 pages) | Cited 1 time

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Profiles of sputter‐deposited films using a mask were measured and compared to theoretical profiles. A discontinuity in the slope of the film profile is shown to be due to the finite thickness of the mask. Backscattering in rf sputter etching is shown to cause two effects: an apparent enhanced etching rate near the mask edge and nonvertical edges of the etched groove. Significant improvement in the etching profile was obtained by using slow‐etching electrodes and low gas pressures.
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81.15.Cd Deposition by sputtering

SIMS and EID observations of propane adsorbed on aluminum

P. H. Dawson

J. Vac. Sci. Technol. 14, 786 (1977); http://dx.doi.org/10.1116/1.569268 (3 pages) | Cited 2 times

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The slow adsorption of propane on aluminum has been observed using SIMS. The adsorbed hydrocarbon species give rise to a characteristic ’’cracking pattern’’ in the mass spectrum. The main ion peaks resulting are C3H8 +, C3H7 +, C3H5 +, C3H3 +, C2H5 +, and CH3 +. The hydrocarbon ions have very low energies. Electron‐induced desorption of hydrocarbon ions was also observed, but in this case the cross sections for ionic desorption were very small.
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68.43.-h Chemisorption/physisorption: adsorbates on surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Photoemision and LEED study of indium phosphide with a determination of minority carrier diffusion length

Keun‐Ho Chang and Paul H. E. Meijer

J. Vac. Sci. Technol. 14, 789 (1977); http://dx.doi.org/10.1116/1.569269 (8 pages)

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Photoemission measurements were taken in indium phosphide from the band gap to 1.8 eV photon energies. The surface activation procedure using cesium and oxygen is described. The condition of the surface was monitored for its crystallinity by a low‐energy‐electron‐diffraction (LEED) camera, and for its purity by Auger electron spectroscopy. The work functions were measured by the electron beam retarding potential method to determine the consequence of the activation processes. The result of the LEED analyses and the work‐function measurements indicate that the activation takes place on the surface in a patchy form. The results of the photoemission data are analyzed in light of the three‐step diffusion model photoemission theory. From the data of the photoemission, the bulk diffusion length is determined to be 530 nm and the surface escape probability to be less than 0.025. Correlating the results of the photoemission experiments with LEED and work‐function measurements, it is found that the surface of indium phosphide is not stable when it is activated, i.e., the photoemission slowly changed. An estimate of the thermalization length is derived and the value is used to describe the discrepancy between the diffusion model theory and the experimental results at photon energies higher than 1.5 eV.
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81.65.-b Surface treatments
73.30.+y Surface double layers, Schottky barriers, and work functions
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Model of the evaporation kinetics from a temperature‐programmed large‐area source. I. Pure selenium

Gerald Abowitz

J. Vac. Sci. Technol. 14, 797 (1977); http://dx.doi.org/10.1116/1.569270 (6 pages)

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A model of the evaporation kinetics of pure selenium from a large‐area boat of complex geometry is presented. The model includes conductive and evaporative heat‐transfer components in the liquid, accounts for the constantly decreasing liquid‐pool height, and demonstrates that natural convection effects are unimportant. A good fit to the experimental data is obtained over most of the range except at the tail end of the evaporation, where small inclinations of the boat from the horizontal have large effects. The utility of the model lies in its ability to predict the evaporation kinetics when changes are made in such operating parameters as the heating rate or boat loading.
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64.70.F- Liquid-vapor transitions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

On temperature measurements of metallic substrates during evaporation

A. Amith

J. Vac. Sci. Technol. 14, 803 (1977); http://dx.doi.org/10.1116/1.569271 (5 pages)

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The problem of knowing the exact temperature of a radiatively heated substrate has been recognized for some time. The present paper reports direct measurements which quantify the types of errors introduced into thermocouple readings (due to the radiation field); it also demonstrates the extent of temperature variations when the substrate and radiant heater are large and of comparable size, and not in intimate and uniform contact. Thermocouples can be used only if their contact to the substrate is intimate (e.g., welded), if they traverse minimum distance in the radiation field (through the heater to the substrate), and if they are protected by their own radiation shield.
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07.20.-n Thermal instruments and apparatus
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Electron‐beam melting of Ti–6Al–4V

T. Landig, R. McKoon, and M. Young

J. Vac. Sci. Technol. 14, 808 (1977); http://dx.doi.org/10.1116/1.569272 (7 pages)

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A program to recycle Ti–6Al–4V machine chip scrap by electron‐beam (EB) melting is described. The advantages of utilizing EB melting are described in terms of the selection of raw materials, the unique characteristics of the EB hearth furnace, the alloying and refining reactions that are promoted, and the unique character of the solidification process. Experimental results are presented on a manufacturing technology program sponsored by the Air Force Materials Laboratory in which machined chips, sponge, and alloy elements are recycled into specification grade Ti–6Al–4V bar stock.
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81.05.Bx Metals, semimetals, and alloys
64.70.D- Solid-liquid transitions

On the use of ring gap discharges for high‐rate vacuum coating

S. Schiller, U. Heisig, and K. Goedicke

J. Vac. Sci. Technol. 14, 815 (1977); http://dx.doi.org/10.1116/1.569273 (4 pages) | Cited 4 times

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The performance and features of ring gap discharges are described. A limited plasma of high density in the cathode region as well as magnetic and electrostatic focusing of the electrons on a given directrix are characteristic of this discharge type. In conformity with the shape of this curve, various ring gap discharges of different geometry can be put into being, e.g., planar type and torus type, just to cite an example. Based on ring gap discharges several ion‐aided technologies may thus be used to advantage in the field of vacuum deposition. High‐rate sputtering, for instance, permits deposition rates in the order of some micrometers per minute which, in turn, brought about entirely new coating arrangements. Against sputter cleaning in a glow discharge the energetic efficiency of substrate pretreatment is about seven times as high and the cleaning speed increases by approximately two orders of magnitude. Alternating ion plating results in very high ion rates. With plasma plating, on the other hand, a single energy source is sufficient to generate on the substrate a powerful stream of vapor particles, sputtered particles, and ions.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Jj Ion and electron beam-assisted deposition; ion plating
52.80.Sm Magnetoactive discharges (e.g., Penning discharges)

High‐resolution quartz oscillator microbalance and its application to the initial oxidation of aluminum

C. Benndorf, G. Keller, H. Seidel, and F. Thieme

J. Vac. Sci. Technol. 14, 819 (1977); http://dx.doi.org/10.1116/1.569274 (3 pages) | Cited 3 times

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Abstract Unavailable
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06.30.Dr Mass and density
81.05.Bx Metals, semimetals, and alloys

Thermal release of ionically pumped inert gases

D. Edwards Jr.

J. Vac. Sci. Technol. 14, 821 (1977); http://dx.doi.org/10.1116/1.569275 (2 pages)

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Abstract Unavailable
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07.30.Bx Degasification, residual gas
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Fabrication of high‐strength unsupported metal membranes

Vincent Y. Pickhardt and Donald L. Smith

J. Vac. Sci. Technol. 14, 823 (1977); http://dx.doi.org/10.1116/1.569276 (3 pages) | Cited 1 time

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Metal membranes ?1 μm thick would be useful as diaphragms for capacitance manometers and acoustic transducers, as x‐ray windows, and as deformable mirrors in optical systems. The high strength‐to‐density to Ti makes that metal particularly suitable for fast‐response deformable membranes. Ti films 1/4–2 μm thick and 2–12 cm in diameter were vacuum‐deposited at 20–100 Å/s from an electron‐beam source at 2×10−7 Torr onto Corning 0317 glass substrates which were held at 500°C by contacting with Ga to a Ti heating block. These substrates are very smooth and match the thermal expansion of Ti to a few percent. Pre‐evaporation of a 300 Å thick CaF2 parting layer allowed membrane removal by water‐assisted peeling. Pressure testing showed membranes to have bulk tensile strength of 4.6–6.2×109 dyn/cm2 (68–92 Kpsi) and to behave elastically. They could be mounted under high tension by heating while clamped to a high thermal expansion coefficient Nylon flange.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
07.07.Mp Transducers
42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors

Adsorption of water vapor on thin‐gold electroplate on copper

S. P. Sharma and J. H. Thomas III

J. Vac. Sci. Technol. 14, 825 (1977); http://dx.doi.org/10.1116/1.569277 (3 pages) | Cited 3 times

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Abstract Unavailable
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73.40.Jn Metal-to-metal contacts
81.05.Bx Metals, semimetals, and alloys
82.45.-h Electrochemistry and electrophoresis
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Modification for sealing Dependex fittings with copper

R. Ekern

J. Vac. Sci. Technol. 14, 828 (1977); http://dx.doi.org/10.1116/1.569278 (2 pages)

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Abstract Unavailable
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07.30.Kf Vacuum chambers, auxiliary apparatus, and materials
07.77.-n Atomic, molecular, and charged-particle sources and detectors

Flowmeter for measuring gas throughput in vacuum system

J. K. N. Sharma and D. R. Sharma

J. Vac. Sci. Technol. 14, 829 (1977); http://dx.doi.org/10.1116/1.569279 (2 pages)

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A modified Stevenson‐type flowmeter for measuring the throuhput of gas into a vacuum system is described.
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07.30.Kf Vacuum chambers, auxiliary apparatus, and materials
47.80.-v Instrumentation and measurement methods in fluid dynamics

Thin‐film deposition using low‐energy ion beams (2) Bb+ ion‐beam deposition and analysis of deposits

J. Amano and R. P. W. Lawson

J. Vac. Sci. Technol. 14, 831 (1977); http://dx.doi.org/10.1116/1.569280 (5 pages) | Cited 3 times

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Thin films of Pb were grown on C and NaCl substrates by retarding a 4‐keV, mass‐analyzed Pb+ ion beam to a low energy before deposition. The films were examined using Rutherford backscattering analysis, scanning electron microscopy, and transmission electrn microscopy. Adhesion was found to be independent of deposition energy for all deposits grown between 24 and 200 eV. The thickness, degree of surface coverage, and crystalline orientation are dependent n incident Pb+ ion energy. 50 eV is an optimum energy of deposition when parameters such as space‐charge expansion, self‐sputtering, film thickness, and surface coverage are considered. As the deposition energy is increased above 50 eV, the crystalline structures of deposits grown on single‐crystal NaCl substrates becomes more ordered with a strongly preferred [100] orientation. High purity and homogeneity of the deposits were attributed to the use of a mass‐analyzed beam and the maintenance of ultra‐high‐vacuum conditions in the substrate chambers.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Thin‐film deposition using low‐energy ion beams (3) Mg+ ion‐beam deposition and analysis of deposits

J. Amano and R. P. W. Lawson

J. Vac. Sci. Technol. 14, 836 (1977); http://dx.doi.org/10.1116/1.569281 (4 pages) | Cited 1 time

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The energy dependence of the growth characteristics of Mg thin film s on C substrates deposited by retarding a 4‐keV mass‐analyzed ion beam of Mg+ ions to a range of energies between 24 and 500 eV has been studied by Rutherford backscattering analysis and scanning electron microscopy. An incident Mg+ beam energy of about 100 eV produced the optimum film−in the shortest time when the space‐charge spreading of the beam at low energies is compared with self‐sputering of the deposit at the higher energies. This is though to be due to deeper penetration of the Mg+ ions into the C substrates above 100 eV.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Quadrupole mass spectrometry and its applications , edited by Peter H. Dawson. Reviewer

Richard Honig

J. Vac. Sci. Technol. 14, 843 (1977); http://dx.doi.org/10.1116/1.569282 (1 page)

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Abstract Unavailable
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82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
07.75.+h Mass spectrometers

Scanning Electron Microscopy 1976 I, edited by OmJohari. Reviewer

W. R. Bottoms

J. Vac. Sci. Technol. 14, 844 (1977); http://dx.doi.org/10.1116/1.569283 (1 page)

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Abstract Unavailable
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
01.30.Cc Conference proceedings

Techniques involving extreme environment, nondestructive techniques, computer methods in metals research, and data analysis, Vol. VII, Pt. 2, edited by R. F. Bunshah. Reviewer

D. F. Stein

J. Vac. Sci. Technol. 14, 844 (1977); http://dx.doi.org/10.1116/1.569284 (1 page)

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Abstract Unavailable
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81.70.-q Methods of materials testing and analysis
06.90.+v Other topics in metrology, measurements, and laboratory procedures (restricted to new topics in section 06)
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
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