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Nov 1978

Volume 15, Issue 6, pp. 1797-1861


Ion‐excited Auger electron emission from silicon

R. A. Powell

J. Vac. Sci. Technol. 15, 1797 (1978); http://dx.doi.org/10.1116/1.569844 (3 pages)

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Auger electron emission from Si excited by ion bombardment with He+, Ne+, Ar+, and Xe+ are reported for ion energies in the range of 1 to 3 keV. The data supports the view that symmetric collisions between Si atoms in the sample are responsible for the observed Auger emission. The relative strength of atomiclike L2,3MM and bulk L2,3VV Auger features in the measured spectra were independent of both ion species and ion energy employed in this study.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

An XPS study of the adherence of refractory carbide silicide and boride rf‐sputtered wear‐resistant coatings

William A. Brainard and Donald R. Wheeler

J. Vac. Sci. Technol. 15, 1800 (1978); http://dx.doi.org/10.1116/1.569845 (6 pages) | Cited 3 times

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Radio frequency sputtering was used to deposit refractory carbide, silicide, and boride coatings on 440‐C steel substrates. Both sputter etched and pre‐oxidized substrates were used and the films were deposited with and without a substrate bias. The composition of the coatings was determined as a function of depth by x‐ray photoelectron spectroscopy combined with argon ion etching. Friction and wear tests were conducted to evaluate coating adherence. In the interfacial region there was evidence that bias may produce a graded interface for some compounds. Biasing, while generally improving bulk film stoichiometry, can adversely affect adherence by removing interfacial oxide layers. in all cases but the iron oxide coverage was only complete on the preoxidized substrates. The film and iron oxides were mixed in the MoSi2 and Mo2C films but layered in the Mo2B5 films. In the case of mixed oxides, pre‐oxidation enhanced film adherence. In the layered case it did not.
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81.15.Cd Deposition by sputtering
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
81.40.Pq Friction, lubrication, and wear
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Oxygen adsorption on polycrystalline Cu films studied by means of gravimetric uptake and work function change

C. Benndorf, B. Egert, G. Keller, H. Seidel, and F. Thieme

J. Vac. Sci. Technol. 15, 1806 (1978); http://dx.doi.org/10.1116/1.569846 (3 pages) | Cited 5 times

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Past investigations into the interactions of oxygen with copper have been made in which the superstructures caused by oxygen adsorption on the main crystallographic orientations were studied by low energy electron diffraction (LEED). Although the low sticking coefficient of oxygen on Cu is generally accepted, no systematically gravimetric measurements of the oxygen adsorption are available. We report our results from combined measurements on evaporated Cu films by means of gravimetric mass gain and work function changes up to an oxygen dosage of 7×105 L.
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68.43.-h Chemisorption/physisorption: adsorbates on surfaces
06.30.Dr Mass and density
73.30.+y Surface double layers, Schottky barriers, and work functions

Low work function electron emitter hexaborides

P. H. Schmidt and D. C. Joy

J. Vac. Sci. Technol. 15, 1809 (1978); http://dx.doi.org/10.1116/1.569847 (2 pages) | Cited 3 times

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Desirable properties of potential electron emitter materials include a high melting point, low vapor pressure and compound stability at elevated temperatures, in addition to a favorable work function ϕ and Richardson number. The rare‐earth hexaborides combine many of these properties. We have evaluated and intercompared these properties in an attempt to establish groups of materials desirable for useful thermionic electron emitters. We find that La, Pr, and Nd hexaborides exhibit the most desirable combination of the above properties. Compounds of Pr or NdB6 with 10%–30% additions of LaB6 appear most promising as future emitter materials.
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79.40.+z Thermionic emission
73.30.+y Surface double layers, Schottky barriers, and work functions

Method of continuously measuring work function changes

J. L. Taylor and W. H. Weinberg

J. Vac. Sci. Technol. 15, 1811 (1978); http://dx.doi.org/10.1116/1.569848 (4 pages) | Cited 4 times

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A method has been developed for measuring work function changes continuously. It is an ac variation of the diode technique and can be implemented easily in a standard retarding potential LEED/Auger system with derivative detection. Measurements for oxygen adsorption on an Ir single crystal illustrate that this method resolves work function changes within 5 meV.
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73.30.+y Surface double layers, Schottky barriers, and work functions
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
73.40.Cg Contact resistance, contact potential

Plasma polymerization of ethylene by magnetron discharge

N. Morosoff, W. Newton, and H. Yasuda

J. Vac. Sci. Technol. 15, 1815 (1978); http://dx.doi.org/10.1116/1.569849 (8 pages) | Cited 3 times

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The deposition rate of plasma‐polymerized ethylene is measured on the electrode and on a substrate placed midway between electrodes in a capacitively coupled system with internal electrodes. Polymerization is carried out under a variety of conditions including low flow rate and pressure, high flow rate and pressure, three frequencies (60 Hz, 10 kHz, 13.56MHz), and with and without a magnetic field at the electrodes. It is found that the low pressure (30–50 mTorr) plasma yields considerably higher conversion of monomer to polymer at the substrate than the high‐pressure plasma (500 mtorr). With a low‐pressure plasma, the use of magnetic field results in higher deposition rates at a given power input. A plasma polymer which adheres exceptionally well to aluminum is formed only midway between electrodes (not at the electrodes) in the 10‐kHz and 13.56‐Mhz low‐pressure plasma.
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52.80.Hc Glow; corona
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Cadmium selenide thin‐film transistors

J. C. Erskine and A. Cserhati

J. Vac. Sci. Technol. 15, 1823 (1978); http://dx.doi.org/10.1116/1.569850 (13 pages) | Cited 6 times

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Vacuum‐deposited CdSe thin‐film transistors (TFT’s) with reproducible good stability, performance, uniformity, and yield were made using sputtered SiO2 gate insulator, Cr source–drain (s–d) electrodes, and postdeposition annealing in N2. These materials and procedures permit the use of multiple pumpdown fabrication methods with no loss in ac characteristics and little sacrifice in dc stability. Promising results were obtained using photolithography (PL) to delineate s–d electrodes, further simplifying fabrication. The dc instability is electron‐trapping type and the drain current decay exhibits a logarithmic time dependence. The slope of this decay curve is used as a parameter to describe device stability and its dependence on the fabrication methods studied: M=0.03–0.06 for one‐pumpdown devices, 0.05–0.08 for multiple pumpdown TFT’s, and 0.1–0.2 for TFT’s with PL‐delineated s–d electrodes. Preliminary reliability studies show that suitably encapsulated TFT’s have long time stability comparable to the good short time stability observed for fresh devices, indicating the absence of built‐in failure mechanisms and the capability for a satisfactory operating life.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Response of a quartz crystal microbalance to a liquid deposit

A. P. M. Glassford

J. Vac. Sci. Technol. 15, 1836 (1978); http://dx.doi.org/10.1116/1.569851 (8 pages) | Cited 2 times

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The response of a quartz crystal microbalance (QCM) to a liquid deposit is less than to a solid deposit of the same mass per unit area because of viscous effects in the deposit. In this paper the relationship between the loss of QCM response and the deposit parameters is derived analytically, using the Navier–Stokes equation to determine the velocity distribution in the deposit, and a Rayleigh perturbation analysis to determine the response. The theoretical model considers droplet type as well as uniform film deposit morphology, and includes the influence of droplet size and distribution parameters. To examine the validity of the theory two series of experiments have been conducted using DC 704 silicone oil deposited on a Celesco Model 700A QCM of 10 MHz frequency. In one series the deposit mass was held constant and the QCM temperature was varied, while in the other series these conditions were reversed. Satisfactory agreement between the measured data and the theoretical predictions for QCM response loss was obtained. By making a more detailed interpretation of the data, with the help of the theory, the droplet deposit area coverage and number density were estimated.
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06.30.Dr Mass and density
68.15.+e Liquid thin films
94.80.+g Instrumentation for space plasma physics, ionosphere, and magnetosphere
81.10.Bk Growth from vapor

Thermal transpiration: A comparison of experiment and theory

T. S. Storvick, H. S. Park, and S. K. Loyalka

J. Vac. Sci. Technol. 15, 1844 (1978); http://dx.doi.org/10.1116/1.569852 (9 pages) | Cited 7 times

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The experimental measurements of the absolute thermal transpiration differential pressure generated in a capillary tube by helium, argon, carbon dioxide, and air are compared to the theoretical differential pressure calculated by Loyalka. The thermal creep flow calculated using the BGK model and Maxwell’s diffuse‐specular reflection operator at the wall is quantitatively correct for these gases.
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47.45.Gx Slip flows and accommodation
47.45.Dt Free molecular flows

Bakable aluminium vacuum chamber and bellows with an aluminum flange and metal seal for ultrahigh vacuum

Hajime Ishimaru

J. Vac. Sci. Technol. 15, 1853 (1978); http://dx.doi.org/10.1116/1.569853 (2 pages)

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A bakable (200°C) aluminium alloy vacuum chamber and bellows (6063‐T6) with an aluminium alloy (2219‐T87) flange and metal seal (Helicoflex‐HN: aluminium O‐ring) has been constructed. Such components may be used in the assemblies of the vacuum chambers in proton synchrotrons and electron storage rings.
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07.30.Kf Vacuum chambers, auxiliary apparatus, and materials
29.20.db Storage rings and colliders
29.20.dk Synchrotrons

Erratum: Study of semiconductor surfaces using an atom‐probe field ion microscope (1) Hydrogen chemisorption on silicon [J. Vac. Sci. Technol. 15, 647 (1978)]

Toshio Sakurai, T. T. Tsong, and R. J. Culbertson

J. Vac. Sci. Technol. 15, 1855 (1978); http://dx.doi.org/10.1116/1.569854 (1 page)

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Abstract Unavailable
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68.43.-h Chemisorption/physisorption: adsorbates on surfaces
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
99.10.Cd Errata

Erratum: Properties and use of perfluoro polyethers for vacuum applications [J. Vac. Sci. Technol. 15, 775 (1978)]

G. Caporiccio, R. A. Steenrod, and L. Laurenson

J. Vac. Sci. Technol. 15, 1855 (1978); http://dx.doi.org/10.1116/1.569855 (1 page)

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Abstract Unavailable
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07.30.Kf Vacuum chambers, auxiliary apparatus, and materials
99.10.Cd Errata

Erratum: Comparison of Auger signals using differential and integral Auger spectra from C and O adsorbed on W [J. Vac. Sci. Technol. 15, 1123 (1978)]

Kazuo Ishikawa and Yasushi Tomida

J. Vac. Sci. Technol. 15, 1856 (1978); http://dx.doi.org/10.1116/1.569856 (1 page)

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Abstract Unavailable
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82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
99.10.Cd Errata

Erratum: Electrical resistivity of vacuum‐deposited molybdenum films [J. Vac. Sci. Technol. 15, 1117 (1978)]

Hideo Oikawa and Takaakira Tsuchiya

J. Vac. Sci. Technol. 15, 1856 (1978); http://dx.doi.org/10.1116/1.569857 (1 page)

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Abstract Unavailable
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73.61.At Metal and metallic alloys
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.40.Rs Electrical and magnetic properties related to treatment conditions
99.10.Cd Errata

Erratum: Optimization of Al step coverage through computer simulation and scanning electron microscopy [J. Vac. Sci. Technol. 15, 13 (1978)]

I. A. Blech, D. B. Fraser, and S. E. Haszko

J. Vac. Sci. Technol. 15, 1856 (1978); http://dx.doi.org/10.1116/1.569858 (2 pages)

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Abstract Unavailable
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
99.10.Cd Errata

Physics of Thin Films by Ludmila Eckertova. Reviewer

P. Mark

J. Vac. Sci. Technol. 15, 1861 (1978); http://dx.doi.org/10.1116/1.569859 (1 page)

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Abstract Unavailable
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01.30.mp Textbooks for undergraduates
68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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