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Jan 1965

Volume 2, Issue 1, pp. 1-57


Current-Induced Gas Evolution from Electron Multipliers

B. R. F. Kendall

J. Vac. Sci. Technol. 2, 1 (1965); http://dx.doi.org/10.1116/1.1491735 (5 pages)

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Electron multipliers are capable of emitting significant volumes of various gases while they are in operation at low pressures. Errors in ultrahigh-vacuum measurements may result. Experiments are described which show that, in a typical case, most of the evolved gas comes from the dynode and collector surfaces as a result of electron bombardment. Additional gas evolution may occur as a result of dynode resistor heating, if internal resistors are used. It appears that gas may also be released from some kinds of insulators when voltage is applied. Methods of minimizing these effects are discussed.
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07.30.Bx Degasification, residual gas
85.60.Ha Photomultipliers; phototubes and photocathodes

An Analysis of Physical Adsorption Isotherms in Ultrahigh-Vacuum Range

A. B. Huang

J. Vac. Sci. Technol. 2, 6 (1965); http://dx.doi.org/10.1116/1.1491736 (6 pages)

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The detailed mechanism of physical adsorption was studied by use of the statistical theory of imperfect gases. The Kirkwood—Muller potential was used for the gas–solid interaction. Adsorption isotherms computed from both the classical method (high-temperature case) and the quantum-mechanical method (very low-temperature case) are given. In the case of the quantum-mechanical method of solution, the important portion of the Kirkwood–Muller potential is approximated by a linear potential, the Schrödinger equation is solved in terms of Bessel functions, and the eigenvalues of the energy are obtained. Comparisons of present results with Hobson's measurements (He on Pyrex glass at 4.2 °K and N2 on Pyrex glass from 63.3 ° to 90.2 °K) show that the present theories are adequate in the ultrahigh-vacuum range and suggest that physical adsorption of helium on Pyrex glass at 4.2 °K is completely quantized.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Source Contamination Effects on the Epitaxy of Ge Films on Ge

John E. Davey

J. Vac. Sci. Technol. 2, 12 (1965); http://dx.doi.org/10.1116/1.1492392 (6 pages) | Cited 3 times

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The effect of source contamination on the structure of Ge films deposited simultaneously onto single-crystal Ge substrates and amorphous quartz Hall substrates has been investigated. Deposition from the refractory metals, from quartz crucibles, and from extensively outgassed and vacuum-loaded graphite crucibles, produce single-crystal films when deposited at a substrate temperature of 350 °C; the electrical properties of the films deposited simultaneously onto the Hall substrates are typical of Ge films with good structural properties. Deposition from un-outgassed graphite crucibles (either resistive or radiative heating) and Al2O3 in either crucible or cataphoretic forms, produce films ranging from amorphous to polycrystalline when deposited on single-crystal Ge at 350 °C. Evaporations from these latter materials will produce single-crystal films on Ge single crystals only for extensive vacuum outgassing and vacuum loading of the Ge charge and for substrate temperatures in excess of 500 °C.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors

Symposium: Nucleation, Growth, and Structure of Thin Films

Klaus H. Behrndt

J. Vac. Sci. Technol. 2, 18 (1965); http://dx.doi.org/10.1116/1.1492393 (2 pages)

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Abstract Unavailable
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
01.10.Fv Conferences, lectures, and institutes

Optical and Structural Properties of Oxidized Titanium Films

Floyd Arntz and Fred Chernow

J. Vac. Sci. Technol. 2, 20 (1965); http://dx.doi.org/10.1116/1.1492394 (4 pages) | Cited 2 times

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This paper is concerned with the properties of evaporated titanium films and their oxides. Thin films of titanium (100 to 500 Å) were evaporated at pressures below 5×10−9 Torr and subsequently oxidized. Amorphous quartz and single crystals of alkalai halides and CaF2 were used as substrates. Evaporations were performed at substrate temperatures in a range from 25 ° to 500 °C. The structures of the films were investigated prior to, during, and following oxidation by employing reflection electron diffraction. The uv transmission spectra of the oxidized films were taken after removing them from the vacuum chamber.
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78.66.-w Optical properties of specific thin films
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Growth and Structure of Electrodeposited Thin Metal Films

Kenneth R. Lawless

J. Vac. Sci. Technol. 2, 24 (1965); http://dx.doi.org/10.1116/1.1492395 (11 pages) | Cited 2 times

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The growth and structure of thin electrodeposits of several metals on single-crystal substrates have been studied by means of electron diffraction and electron microscopy. Deposits of copper on nickel, nickel on copper, and gold on copper show a highly perfect orientation at all thicknesses up to 1000 Å. All deposits studied were continuous for thicknesses greater than 50 Å. Gold deposits of 15 Å were discontinuous on the (111) face. Few growth twins were found, but double positioning structures occurred in both nickel and gold films. Evidence for the enhanced nucleation of copper deposits on substrate twins was found.
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81.15.Pq Electrodeposition, electroplating
68.55.-a Thin film structure and morphology

Metastable Alloy Films

S. Mader

J. Vac. Sci. Technol. 2, 35 (1965); http://dx.doi.org/10.1116/1.1492396 (7 pages) | Cited 49 times

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Metastable alloy films of a number of binary alloy systems with limited terminaI solubilities were prepared by simultaneous vapor deposition of the two components onto a cold substrate. The resulting structures are either crystalline solid solutions (of concentrations higher than the terminal solubility) or amorphous solutions. Several examples for both types of structures are described. The conditions for occurrence of the amorphous structure are found to be a difference of atomic radii of the components in excess of 10% and a sufficiently low substrate temperature. The composition range of the amorphous structure increases with increasing difference of the atomic size of the components. Amorphous structures generally decompose at about 0.3 Tm (where Tm is the average melting temperature), while metastable crystalline structures decompose near 0.45 Tm. Thus, for many of the alloys studied, the metastable structure persisted to room temperature and above.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Progress in the Continuous Observation of Thin-Film Nucleation and Growth Processes by Electron Microscopy

Helmut Poppa

J. Vac. Sci. Technol. 2, 42 (1965); http://dx.doi.org/10.1116/1.1492397 (7 pages) | Cited 21 times

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A brief review of past work on the continuous observation of thin-film growth processes through electron microscopy is followed by a discussion of the advantages and limitations of the in-situ technique. Experimental measures of improving the applicability of in-situ observations, specifically the improvement of vacuum conditions at the site of the electron microscope specimen, are described. The heterogenous nucleation of silver from the vapor phase on amorphous carbon is used to illustrate the feasibility of quantitative nucleation experiments inside an electron microscope. Absolute nucleation rates were measured directly and through detailed analysis of the nucleus size distribution function. It was found that the nucleation rate is time-dependent and corresponding activation energies for adsorption and surface diffusion assume reasonable values.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Structure and Annealing Behavior of Metal Films Deposited on Substrates near 80 °K: I. Copper Films on Glass

R. W. Vook and F. Witt

J. Vac. Sci. Technol. 2, 49 (1965); http://dx.doi.org/10.1116/1.1492398 (9 pages) | Cited 15 times

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An in situ x-ray investigation of copper films has been carried out. Films were deposited on glass at 80 °K and room temperature in high vacuum. Measurements were made on the as-deposited films as well as after annealing at temperatures up to 200 °C. Values for the stacking fault and twin fault densities, particle sizes, and strain in these films have been obtained. The presence of preferred orientations and grain growth during annealing was also studied.
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68.55.-a Thin film structure and morphology
68.60.Dv Thermal stability; thermal effects
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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