TiN formed by evaporation as a diffusion barrier between Al and Si

Ting, C. Y.

doi:doi:10.1116/1.571700

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Journal of Vacuum Science & Technology Archives 1964-1982 / Volume 21 / Issue 1

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J. Vac. Sci. Technol. 21, 14 (1982); http://dx.doi.org/10.1116/1.571700 (5 pages)

TiN formed by evaporation as a diffusion barrier between Al and Si

C. Y. Ting

IBM T. J. Watson Research Center, Yorktown Heights, New York 10598

Abstract

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The formation of TiN thin films by doping Ti with N₂ during evaporation at room temperature and by following with high‐temperature (700–900 °C) annealing was confirmed by x‐ray analysis. This is different from conventional reactive sputtering and is compatible with lift‐off processes in pattern delineation. It has been observed that when Ti is heavily doped with N on a silicon substrate, the reaction between Ti and Si which forms TiSi₂ is totally suppressed during high‐temperature annealing and forms TiN only. On the other hand, if a thin layer of pure Ti was evaporated on a Si substrate before the introduction of N₂, then a composite film of TiN/TiSi₂ was formed with a clear boundary between them after high‐temperature annealing. The thickness of each layer can be well controlled by the initial evaporation thickness. In both cases, Al was deposited on top. Rutherford backscattering studies showed that TiN is an effective diffusion barrier up to 550 °C for 30 min of annealing and forms an ideal contact barrier between Al and Si.