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J. Vac. Sci. Technol. 21, 19 (1982); http://dx.doi.org/10.1116/1.571713 (4 pages)
Grain boundary diffusion of phosphorus in polycrystalline silicon
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Add to FacebookThe preferential diffusion of phosphorus down grain boundaries in cast polysilicon wafers has been studied using angle polishing followed by measuring junction depth by staining or e‐beam†induced current. Data show that at 1040 °C the grain boundary diffusion parameter is 8000 × larger than the bulk diffusion coefficient (DBulk = 3.3×10−13cm2/s). During normal diffusion for 40 min at 1040 °C, a junction was created at 1.8 μm within the grain itself, but at the grain boundary the junction region extended ∠6 μm into the wafer. Concentration profiles near the grain boundary were calculated and compared to electrical response data for similar grain boundaries. In addition, the effects of heating polycrystalline wafers without a source of phosphorus at the surface was calculated, and it was concluded that lateral inhomogeneities of the dopant concentration, which may degrade solar cell performance, will exist both with and without a constant source of phosphorus for diffusion.
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0022-5355 (print)
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