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Sep 1982

Volume 21, Issue 3, pp. 725-904


Technology and applications of broad‐beam ion sources used in sputtering. Part I. Ion source technology

H. R. Kaufman, J. J. Cuomo, and J. M. E. Harper

J. Vac. Sci. Technol. 21, 725 (1982); http://dx.doi.org/10.1116/1.571819 (12 pages) | Cited 63 times

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The technology of broad‐beam ion sources used in sputtering applications is reviewed. The most frequently used discharge chambers are described, together with procedures for predicting performance. A new, compact ion source is described. Ion acceleration is reviewed, with particular emphasis on recent low‐energy techniques. Some of these techniques include three‐grid, small‐hole two‐grid, and one‐grid ion optics. A new material for fabrication of high‐precision ion optics is silicon. Because no stresses are introduced with the etching techniques used, the finished grid can be held to very close tolerances. A recent innovation for sputtering applications is the use of Hall‐current acceleration. This technique uses a magnetic field interacting with an electron current to provide the accelerating electric field, thereby avoiding the usual space‐charge limit on ion current density that is associated with gridded optics. Electron emission is also reviewed, with new hollow cathodes promising improved lifetimes. The overall picture is one of greatly improved ion source capability, with particularly large improvements in low‐energy ion current densities.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
07.77.-n Atomic, molecular, and charged-particle sources and detectors

Technology and applications of broad‐beam ion sources used in sputtering. Part II. Applications

J. M. E. Harper, J. J. Cuomo, and H. R. Kaufman

J. Vac. Sci. Technol. 21, 737 (1982); http://dx.doi.org/10.1116/1.571820 (20 pages) | Cited 47 times

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The developments in broad‐beam ion source technology described in the companion paper (Part I) have stimulated a rapid expansion in applications to materials processing. These applications are reviewed here, beginning with a summary of sputtering mechanisms. Next, etching applications are described, including microfabrication and reactive ion beam etching. The developing area of surface layer applications is summarized, and related to the existing fields of oxidation and implantation. Next, deposition applications are reviewed, including ion‐beam sputter deposition and the emerging technique of ion‐assisted vapor deposition. Many of these applications have been stimulated by the development of high current ion sources operating in the energy range of tens of hundreds of eV. It is in this energy range that ion‐activated chemical etching is efficient, self‐limiting compound layers can be grown, and the physical properties of vapor‐deposited films can be modified. In each of these areas, broad ion beam technology provides a link between other large area plasma processes and surface analytical techniques using ion beams.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.65.-b Surface treatments
81.15.Cd Deposition by sputtering

Simulation of plasma‐assisted etching processes by ion‐beam techniques

T. M. Mayer and R. A. Barker

J. Vac. Sci. Technol. 21, 757 (1982); http://dx.doi.org/10.1116/1.571821 (7 pages) | Cited 63 times

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Fundamental aspects of plasma‐assisted etching processes can be investigated in a well‐defined and controllable manner by ion‐beam techniques. We review here our experiments aimed at simulating a plasma environment using beams to investigate the effects of a number of fundamental parameters of plasma processes, such as the chemical identity of bombarding ions, flux of ions and neutrals to a surface, and ejection of products from a surface. Enhanced ion etching due to reactions of neutral gases with surfaces is demonstrated, and product ejection mechanisms are shown to be possible rate limiting factors in reactive etching processes. A simple chemically enhanced sputtering model suffices to account for the main features of ion‐induced etching. Applications of this model to bulk plasma processes, dependence of etch yield on ion angle of incidence, and surface composition modification are suggested.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Developments in broad‐beam, ion‐source technology and applications

H. R. Kaufman, J. M. E. Harper, and J. J. Cuomo

J. Vac. Sci. Technol. 21, 764 (1982); http://dx.doi.org/10.1116/1.571822 (4 pages) | Cited 5 times

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Recent advances in broad‐beam, ion‐source technology are summarized, including low‐energy ion optics, improved extraction grid fabrication, a compact ion‐source design and a gridless ion‐source design. Recent applications have emphasized concepts such as stress modification of vapor deposited films, very low energy ion beams to minimize the physical sputtering portion in reactive etching, and the use of multiple sources and targets to sputter deposit alloys and compounds. A comprehensive critical review by the same authors appears concurrently, describing in detail the developments in broad‐beam, ion‐source technology1 and the applications of these sources.2
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering

Plasma beam studies of Si and Al etching mechanisms

Donald L. Smith and Paul G. Saviano

J. Vac. Sci. Technol. 21, 768 (1982); http://dx.doi.org/10.1116/1.571823 (6 pages) | Cited 17 times

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The study of plasma etching mechanisms is made difficult by the presence of the plasma at the etching surface. However, etching in a plasma beam extracted from such a plasma allows: (1) mass analysis of beam species and of directly desorbing etching product, (2) simultaneous XPS analysis of the etching surface, and (3) ion acceleration or retardation without changing neutral species composition. The present beam was extracted from the unpowered electrode of a source operating under typical plasma etching conditions of 50 Pa and 27 MHz. Appearance potential mass spectroscopy was used to distinguish spectrometer fragmentation products from plasma radicals. Cl2 plasma beam reaction with undoped Si and with oxidized Al occurs only with ion bombardment, whereas with clean Al it occurs without ions, leading to isotropic (undercut) etching. Surface oxygen depletion and the onset of Al2Cl6 desorption were simultaneously monitored during the ’’initiation’’ phase of Al etching. Anisotropic Al etching in chlorocarbon plasmas is believed to be dependent on sidewall etching inhibition by chlorocarbon deposits. Mass analysis of beams from Cl2 plasmas containing 20% CCl4, CHCl3, or CH3Cl showed a similar product distribution of CmCln species in all three cases and, in the latter two cases, almost complete abstraction of H by Cl atoms to form HCl. The HCl neither enhances nor inhibits the reaction of Al with Cl2 plasma, nor does it react with clean Al in the absence of ion bombardment.
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81.05.Bx Metals, semimetals, and alloys
52.40.Hf Plasma-material interactions; boundary layer effects

Plasma analysis based on newly found similarities in the relative populations of excited states produced by sputtering and by electron impact

Roger Kelly, S. A. Shivashankar, and J. J. Cuomo

J. Vac. Sci. Technol. 21, 774 (1982); http://dx.doi.org/10.1116/1.571824 (4 pages) | Cited 1 time

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It is shown, by considering relevant theory, that the inelastic energy ΔEe transferred to sputtered atoms should have a similar distribution dN/d(ΔEe) to that transferred in medium‐energy (≳100 eV) electron–atom collisions: dN/d(ΔEe)∝1/(ΔEe)2. The correctness of this proposition is demonstrated by comparing the relative populations of excited atoms and ions (Al i, Al ii, Al iii) formed by bombarding solid Al with 30 keV Ar+ with those formed by bombarding gaseous Al with energetic electrons, and at the same time comparing both populations with a statistical theory based on the 1/(ΔEe)2 distribution. From the point of view of plasma analysis, this means that the recently developed theory of excited‐state formation in sputtering can be extended without alteration to that component of plasmas due to medium‐energy, electron–atom collisions.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
79.20.Kz Other electron-impact emission phenomena
34.80.Dp Atomic excitation and ionization

Factors determining the compound phases formed by oxygen or nitrogen implantation in metals

Roger Kelly

J. Vac. Sci. Technol. 21, 778 (1982); http://dx.doi.org/10.1116/1.571825 (12 pages) | Cited 13 times

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Oxygen or nitrogen implantation in a metal is well known to lead to oxides or nitrides, often in the form of precipitates. In some cases the phase formed is unambiguous in that there is either no phase stable with respect to O or N loss (e.g., Ag) or only one (e.g., Al). In other cases (e.g., Ti), however, two or more phases are possible in the sense of being stable with respect to O or N loss. We present a model based on the postulate that implanted O or N leads to precipitates which tend to be in qualified thermodynamic equilibrium with the metal. The qualifications are that a phase will fail to appear if subject to amorphization, O or N loss, or (for a phase the cations of which are crystallographically like the metal) randomization.
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61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities

Ion‐beam‐induced topography and surface diffusion

R. S. Robinson and S. M. Rossnagel

J. Vac. Sci. Technol. 21, 790 (1982); http://dx.doi.org/10.1116/1.571826 (8 pages) | Cited 17 times

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The development of surface microtexture along with ion‐impact‐enhanced surface and bulk diffusion processes is important for users of ion beams and plasmas for thin film or material processing. Even in those applications where texturing is not desired, an understanding of the process of texturing will permit proper corrective action when texturing is found to occur. Surface microtexturing produced using ion‐beam sputtering and simultaneous deposition of impurities is described both in terms of a simple diffusion model and with regard to detailed studies of the initiation, development, and failure of individual sputter cones. Digital computer calculations are presented which follow surface feature development under sputtering. These calculations appear to confirm the role of ion reflection in the development of cones. A coating associated with the impurity deposition is often observed on individual cones. This coating appears to play a role both in the initial development of cones and in the subsequent evolution of second generation cones in a steady‐state process. Surface diffusion, in excess of that expected from thermally activated diffusion alone, has been observed as the ion‐beam current density is increased. This impact‐enhanced diffusion appears to depend on cooperative effects between multiple ion impacts.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)
66.30.-h Diffusion in solids

Laser‐enhanced gas–surface chemistry: Basic processes and applications

T. J. Chuang

J. Vac. Sci. Technol. 21, 798 (1982); http://dx.doi.org/10.1116/1.571827 (9 pages) | Cited 28 times

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Chemical reactions in homogeneous systems activated by laser radiation have been extensively investigated for many years. The applications of lasers to promote gas–surface interactions have just begun to be realized. The purpose of the paper is to examine the fundamental processes involved in laser‐enhanced gas–surface chemistry with particular emphases on aspects directly related to chemical etching of solids. Specifically, three basic surface processes, i.e., adsorption, product formation, and desorption affected by the presence of the laser radiation field, are discussed. Current studies on laser‐induced chemical etching including etch rates, spatial resolution, directionality, and selectivity are reviewed. Examples to illustrate the basic laser‐stimulated processes and possible applications of the laser technique to material processing are also given.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.65.-b Surface treatments
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Ion beam sputter‐deposited diamondlike films

Bruce A. Banks and Sharon K. Rutledge

J. Vac. Sci. Technol. 21, 807 (1982); http://dx.doi.org/10.1116/1.571828 (8 pages) | Cited 10 times

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A single argon ion beam source was used to sputter deposit carbon films on fused silica, copper and tantalum substrates under conditions of sputter deposition alone and sputter deposition combined with simultaneous argon ion bombardment. Simultaneously deposited and ion bombarded carbon films were prepared under conditions of carbon atom removal to arrival ratios of 0, 0.36, and 0.71. Deposition and etch rates were measured for films on fused silica substrates. Resulting characteristics of the deposited films are: electrical resistivity of ≳1011 Ω cm, densities of 2.1 g/cm3 for sputter‐deposited films and 2.2 g/cm3 for simultaneously sputter‐deposited and Ar ion‐bombarded films. For ∠1700‐Å thick films deposited by either process and at 5550 Å wavelength light the reflectance was 0.2, the absorptance was 0.7, the absorption coefficient was 6.7×104 cm−1, and the transmittance was 0.1.
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81.15.Cd Deposition by sputtering
75.20.Ck Nonmetals
73.61.Ng Insulators
61.80.Jh Ion radiation effects

Laser diagnostics of plasma etching: Measurement of Cl+2 in a chlorine discharge

V. M. Donnelly, D. L. Flamm, and G. Collins

J. Vac. Sci. Technol. 21, 817 (1982); http://dx.doi.org/10.1116/1.571829 (7 pages) | Cited 46 times

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Laser‐induced fluorescence has been used to determine the relative density of Cl+2 in a chlorine radio frequency discharge as a function of pressure, flow, power, frequency, and distance from the electrodes. The conditions studied correspond closely to those used in anisotropic plasma etching of materials such as Si and InP. This technique provides quantitative data on ion densities over a wide range of parameters, as contrasted with qualitative methods, such as optical emission.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.80.Dy Low-field and Townsend discharges
52.25.Kn Thermodynamics of plasmas

The fabrication and use of silicon and gallium arsenide ion source extraction grids

J. L. Speidell, J. M. E. Harper, J. J. Cuomo, A. W. Kleinsasser, H. R. Kaufman, and A. H. Tuttle

J. Vac. Sci. Technol. 21, 824 (1982); http://dx.doi.org/10.1116/1.571830 (4 pages) | Cited 2 times

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This paper describes the fabrication and use of silicon ion source extraction grids. Ion beam processing is dependent upon the extraction grid design and materials since the stability of the beam characteristics depends upon the stability of the grids. Conventional ion source extraction grids are produced using mechanical methods and have several disadvantages, including cost and distortion. A procedure is presented here for fabricating silicon grids using microelectronic fabrication methods. Designs for producing collimated, diverging or focused beams, and a fine mesh single grid configuration suitable for low energy operation are described. Beam profiles and performance are presented. Extraction grids of gallium arsenide have also been prepared, and their fabrication is described.
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07.77.-n Atomic, molecular, and charged-particle sources and detectors

Model of bias sputtering in a dc‐triode configuration applied to the production of Pd films

P. Ziemann and E. Kay

J. Vac. Sci. Technol. 21, 828 (1982); http://dx.doi.org/10.1116/1.571831 (5 pages) | Cited 7 times

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A simple model is presented, which describes film deposition by bias sputtering in a dc‐triode system. The model is applied to sputtering of Pd films in a Kr discharge and allows analysis of the experimental results in terms of normalized energy (energy delivered to the growing film by impinging Kr ions per arriving Pd atom) and normalized currents (number of arriving species/number of deposited Pd atoms) in a way similar to dual beam experiments. A linear relation has been found between this normalized energy and the percentage of Pd atoms resputtered from the growing film. This reaffirms that basic results of static sputtering theory can readily be applied to the dynamic situation as encountered in a glow discharge sputter deposition experiment. The asymmetry of the triode configuration due to the injection of the electron beam, which results in spatially nonuniform deposition rates, is taken into account.
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81.15.Cd Deposition by sputtering

Effects of argon pressure on the structure and properties of dc planar‐magnetron‐sputtered metal and semiconductor films with implications for solar energy applications

S. Craig and G. L. Harding

J. Vac. Sci. Technol. 21, 833 (1982); http://dx.doi.org/10.1116/1.571832 (5 pages) | Cited 1 time

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The influence of argon gas pressure (0.15–40 Pa) on the microstructure of dc planar‐magnetron‐sputtered stainless steel and reactively sputtered carbon and silicon films has been investigated for films of thickness ∠1 μm. The carbon and silicon films are amorphous and incorporate hydrogen. Classification of the film structures is in accordance with the general zone model proposed by Thornton, although the voided boundaries characteristic of zone I columnar structure which are observed for stainless steel films do not develop for the carbon and silicon films. The implications of film structure for potential solar energy applications are discussed.
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81.15.Cd Deposition by sputtering
68.60.-p Physical properties of thin films, nonelectronic
68.55.-a Thin film structure and morphology

An XPS study of sputtered a‐Si,Ge alloys

G. Lucovsky, S. S. Chao, J. E. Tyler, and G. De Maggio

J. Vac. Sci. Technol. 21, 838 (1982); http://dx.doi.org/10.1116/1.571833 (7 pages) | Cited 4 times

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The x‐ray photoelectron (XPS) spectra of amorphous silicon–germanium alloys (a‐Si,Ge) were measured using Al Kα excitation. Homogeneity of the alloy samples was established through measurements of the optical absorption edge, the Raman scattering, and the electron energy loss (EELS) spectra. We have studied in detail the binding energies (BE) of the Si 2 p and Ge 3d core states, and in particular any systematic shifts in their difference BE (Si 2 p)‐BE (Ge 3d) as a function of alloy composition. We place an upper limit of 0.4 eV as the chemical shift to larger binding energies of the Si 2 p state between a‐Si and an alloy with 80 at.% Ge. This in turn yields a maximum difference in Pauling electronegativities (X) of about 0.1. Our results therefore support the values of X obtained via thermochemical methods, and have added insight into the way other atoms will bond in amorphous alloys containing both Si and Ge.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.65.-b Surface treatments

A new x‐ray generator for XPS applications

O. Ganschow and P. Steffens

J. Vac. Sci. Technol. 21, 845 (1982); http://dx.doi.org/10.1116/1.571834 (8 pages) | Cited 1 time

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This paper describes a new x‐ray generator for the production of Al Kα or Mg Kα radiation to be used for photoelectron spectroscopy of solid surfaces. The x‐ray source is equipped with a stationary anode rated for 1.5 kW loss power (with Al anode) during continuous operation, corresponding to a power density of 12 kW/cm2. Its power supply is based on switching regulators and has a 20 kV, 2 kW stabilized anode voltage supply with 50 ms settling time. Two of these x‐ray generators have been operated for three years with different commercial XPS systems. The resulting improvements in performance are shown.
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07.85.-m X- and γ-ray instruments
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Study of grain boundary diffusion of potassium in gold films using a clean, controlled, and localized source of alkali atoms

M. H. Farías, J. L. Peña, and F. Sánchez‐Sinencio

J. Vac. Sci. Technol. 21, 853 (1982); http://dx.doi.org/10.1116/1.571835 (5 pages) | Cited 1 time

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Grain boundary diffusion of K in polycrystalline Au films has been studied by the Auger surface accumulation method. A novel diffusant source which is clean, controlled, and localized was used. The Au film was deposited on a KCl substrate and an electron beam was sent through the Au film. K was then generated by electron impact dissociation of KCl. The value of the diffusion constant obtained is (K′δ/δ′)Db = (1.6±1.1)×10−13 cm2 s−1.
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66.30.Lw Diffusion of other defects
61.72.Mm Grain and twin boundaries
79.20.Fv Electron impact: Auger emission
61.80.Fe Electron and positron radiation effects

The composition and structure of oxide films grown on the (110) crystal face of iron

M. Langell and G. A. Somorjai

J. Vac. Sci. Technol. 21, 858 (1982); http://dx.doi.org/10.1116/1.571836 (9 pages) | Cited 7 times

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Epitaxial oxide layers of Fe3O4‐like composition and symmetry have grown on Fe(110) crystals exposed to oxygen gas. The epitaxial relationship between the oxide and the Fe(110) substrate is elucidated and the orientation of the oxide film has been explained in terms of the close registry between the Fe(110) and Fe3O4(111) crystal lattices. Both the structure and composition of the iron oxide epitaxies are a function of substrate temperature and oxygen pressure, and oxide formation has been observed over only part of the temperature–pressure range investigated. While oxide surfaces with Fe2O3‐like composition have been observed, they are disordered and are only approximately one monolayer in thickness.
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68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
61.66.Fn Inorganic compounds
79.20.Fv Electron impact: Auger emission

A miniature scanning electron microscope for investigation of the interior surface of a superconducting Nb radiofrequency accelerating cavity

A. G. Mathewson and A. Grillot

J. Vac. Sci. Technol. 21, 867 (1982); http://dx.doi.org/10.1116/1.571837 (5 pages)

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A miniature scanning electron microscope with an electron beam diameter ∠1 μm has been constructed for high resolution examination at room temperature of the interior surface of a superconducting Nb radiofrequency accelerating cavity. Various objects and surface structures were observed, some of which could be correlated with lossy regions or ’’hot spots’’ detected previously on the outside surface during cavity operation at ?4.2 K by a chain of carbon resistors. No internal surface features were observed which could conclusively be correlated with field emitting electron sources.
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85.25.-j Superconducting devices
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
29.27.Eg Beam handling; beam transport

Electron optical column for high‐speed electron beam delineator: VL‐R2

M. Nakasuji, H. Wada, and S. Sano

J. Vac. Sci. Technol. 21, 872 (1982); http://dx.doi.org/10.1116/1.571838 (7 pages) | Cited 2 times

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An electron optical column for a raster scan electron beam delineator with a continuously moving workstage was developed. The electron optical column consists of an electron gun using a single crystal LaB6 cathode, five magnetic lenses, and four electrostatic deflectors, which enable high‐speed and hysteresisless deflection. 80‐A/cm2 current density with better than 0.3 μm beam resolution and maximum beam size of 0.5×4 μm were obtained. Deflection distortion is less than 0.1 μm, and beam resolution is less than 0.3 μm without dynamic focus or astigmatism correction within 350×250 μm field size. Beam position drift is less than 0.04 μm/2H. Beam intensity instability is less than 1.0% within 36 h. The cathode lifetime was 2700 h.
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41.75.Fr Electron and positron beams

Computation of the elliptic functions used in calculating electron emission from surfaces

S. S. Sidhu

J. Vac. Sci. Technol. 21, 879 (1982); http://dx.doi.org/10.1116/1.571839 (2 pages) | Cited 2 times

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Four functions involving elliptic integrals—v( y), t( y), s( y), and ϑ( y) [or fmg ( y)]—are used in calculating electron emission from surfaces under the influence of temperature and external electric fields. Published tables and various types of approximations for their calculation exist in the literature. Limitations to their use are discussed. A method is described whereby they can be computed directly by evaluating the complete elliptic integrals through an iterative algorithm that can be programmed even on pocket calculators.
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79.70.+q Field emission, ionization, evaporation, and desorption
79.40.+z Thermionic emission

A practical high capacity, high evaporation, rate‐resistance‐heated source

J. A. Dobrowolski, A. Waldorf, and R. L. Wilkinson

J. Vac. Sci. Technol. 21, 881 (1982); http://dx.doi.org/10.1116/1.571840 (5 pages) | Cited 1 time

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The design and performance is described of a 150‐cc‐capacity resistance‐heated evaporation source capable of sustained evaporation of ’’soft’’ optical coating materials at steady rates of up to 600 Å/s measured on a stationary substrate in a plane 25 cm above the source. Its angular evaporation characteristics do not depart greatly from the cosine distribution. The source has been designed to operate in an industrial environment.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
07.20.Ka High-temperature instrumentation; pyrometers

Obtaining pressures in the 10−5 Pa range with oil‐sealed rotary vacuum pumps

B. R. F. Kendall

J. Vac. Sci. Technol. 21, 886 (1982); http://dx.doi.org/10.1116/1.571841 (5 pages)

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Trapped oil‐sealed rotary pumps are usually considered capable of ultimate pressures no lower than about 10−3 Pa. Experiments are described which confirm that most of this residual gas originates from air dissolved in the pump oil. Replacement of the air with a less soluble gas (helium) or an easily trapped gas (carbon dioxide) is shown to give a useful reduction in ultimate pressure and to reduce the oxygen partial pressure to essentially zero. Operation with completely degassed oil is shown to give ultimate pressures in the 10−5 Pa range. The design of pumps based on these principles is discussed.
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07.30.Bx Degasification, residual gas
07.30.Cy Vacuum pumps

Comments on: ’’Simulation of ion‐beam‐etched pattern profiles’’

J. A. Vallés‐Abarca and A. Gras‐Marti

J. Vac. Sci. Technol. 21, 891 (1982); http://dx.doi.org/10.1116/1.571842 (2 pages)

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Abstract Unavailable
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
81.65.-b Surface treatments
61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Pressure pulsations above turbomolecular pumps

S. Danziger, B. R. F. Kendall, and J. Dormer

J. Vac. Sci. Technol. 21, 893 (1982); http://dx.doi.org/10.1116/1.571843 (3 pages)

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The effect of increasing the temperature of the cooling water for a Leybold Turbovac 350 is studied. (AIP)
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07.30.Cy Vacuum pumps

A simple procedure for rejuvenating Cu/Be electron multipliers using an O2 plasma

K. Frick

J. Vac. Sci. Technol. 21, 896 (1982); http://dx.doi.org/10.1116/1.571844 (1 page) | Cited 1 time

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The gain of an electron multiplier can be restored by a plasma treatment lasting 45 min. (AIP)
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84.47.+w Vacuum tubes

MBE evaporation source fitted with shutter and water‐cooled jacket

A. Bosacchi, S. Franchi, P. Allegri, and V. Avanzini

J. Vac. Sci. Technol. 21, 897 (1982); http://dx.doi.org/10.1116/1.571845 (2 pages) | Cited 1 time

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The design and performance of a MBE growth chamber are reported. The heating element is a 0.5 mm diameter tungsten wire.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Simple, low cost, and highly stable Pd evaporation source for use in UHV

B. C. De Cooman and R. W. Vook

J. Vac. Sci. Technol. 21, 899 (1982); http://dx.doi.org/10.1116/1.571846 (2 pages)

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The design of a source for the thermal evaporation of Pd from a resistively heated W filament in UHV is presented. The source’s main advantages are its simplicity, low cost, long lifetime, and stability at low deposition rates.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Real‐time parylene coating thickness measurement using optical reflectometry

H. Kim, T. Powers, and J. Mason

J. Vac. Sci. Technol. 21, 900 (1982); http://dx.doi.org/10.1116/1.571847 (2 pages) | Cited 1 time

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Abstract Unavailable
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07.60.Hv Refractometers and reflectometers
07.77.-n Atomic, molecular, and charged-particle sources and detectors
81.20.-n Methods of materials synthesis and materials processing

Anodization of aluminum wire for ultrahigh vacuum electromagnetic coils

John R. Barthel and John B. Hudson

J. Vac. Sci. Technol. 21, 901 (1982); http://dx.doi.org/10.1116/1.571848 (2 pages)

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It was found that outgassing problems were eliminated when .020\ diam aluminum wires were anodized in a solution of 25 g oxalic acid per liter of water.
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81.05.Bx Metals, semimetals, and alloys
82.45.-h Electrochemistry and electrophoresis
84.32.Hh Inductors and coils; wiring

Erratum: Undoped low resistivity CdS thin films deposited on low temperature (∠200 °C) substrate by single source evaporation [J. Vac. Sci. Technol. 20, 306 (1982)]

R. R. Arya, R. Beaulieu, M. Kwietniak, J. J. Loferski, and L. Kazmerski

J. Vac. Sci. Technol. 21, 903 (1982); http://dx.doi.org/10.1116/1.571849 (1 page)

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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
99.10.Cd Errata

Erratum: Preferential sputtering of TiC and TiB2 coatings under D+ and 4He+ bombardment: Partial yields [J. Vac. Sci. Technol. 20, 1304 (1982)]

M. Kaminsky, R. Nielsen, and P. Zschack

J. Vac. Sci. Technol. 21, 903 (1982); http://dx.doi.org/10.1116/1.571850 (1 page)

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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
79.60.Jv Interfaces; heterostructures; nanostructures
99.10.Cd Errata

Air Movement and Vacuum Devices (Process Equipment Series, Vol. 3) edited by Mahesh V. Bhatia and Paul N. Chermisinoff

Mars Hablanian

J. Vac. Sci. Technol. 21, 904 (1982); http://dx.doi.org/10.1116/1.571851 (1 page)

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01.30.Ee Monographs and collections
07.30.Cy Vacuum pumps
07.30.Kf Vacuum chambers, auxiliary apparatus, and materials
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