Electron‐beam lithography three‐mark silicon automatic registration and its capabilities for process distortion compensation

Tobias, Eric; Carroll, Allen

doi:doi:10.1116/1.571881

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Journal of Vacuum Science & Technology Archives 1964-1982 / Volume 21 / Issue 4

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J. Vac. Sci. Technol. 21, 999 (1982); http://dx.doi.org/10.1116/1.571881 (6 pages)

Electron‐beam lithography three‐mark silicon automatic registration and its capabilities for process distortion compensation

Eric Tobias¹ and Allen Carroll²

¹Amdahl Corporation, Sunnyvale, California 94086
²Perkin–Elmer electron beam technology, Hayward, California 94545

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Submicron e‐beam lithography requires that successive levels be accurately registered to each previously processed pattern on a wafer. Using a Perkin–Elmer manufacturing electron‐beam exposure system (MEBES)^R, we estimate the ability of an automated three‐mark registration system to correct for distortion created by typical silicon processing. The results show that this registration system is capable of tracking process‐induced distortions typically to within 0.15 μm everywhere on 64‐mm‐diam silicon wafers.