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May 1967

Volume 4, Issue 3, pp. 103-142


Errors in Pressure Measurement and Impurity Generation in Hydrogen using Bayard-Alpert Ionization Gauges

J. H. Singleton

J. Vac. Sci. Technol. 4, 103 (1967); http://dx.doi.org/10.1116/1.1492530 (8 pages) | Cited 3 times

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A Bayard–Alpert ion gauge, with thoria-coated electron emitters, was used to measure hydrogen pressures using emission currents as high as 10 mA without production of serious amounts of impurities. The use of high emission currents does not result in a high pumping speed and has the advantage of reducing measurement errors. Such errors result from the adsorption of carbon monoxide on the grid of the ion gauge and occur at carbon monoxide pressures as low as 0.3% of the hydrogen pressure. The total desorption probability of carbon monoxide is approximately 2×10−5 particles∕electron and approximately half of the gas is desorbed as ions. At high emission currents the adsorption of carbon monoxide on the grid is kept at a minimum thus reducing the spurious current to the ion collector. For example, in hydrogen at 3.5×10−9 Torr, in the presence of 1 to 2% carbon monoxide, the ion-gauge indication of pressure is ∼10% high for operation at 10-mA electron emission, while at 100 μA the indicated pressure increases to ten times the true pressure.
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07.30.Dz Vacuum gauges

Contamination of Silicas during High-Temperature Degassing in Vycor Tubes

M. J. D. Low, N. Ramasubramanian, and P. Ramamurthy

J. Vac. Sci. Technol. 4, 111 (1967); http://dx.doi.org/10.1116/1.1492531 (4 pages) | Cited 1 time

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Materials heated in vacuo at 800 °C in Vycor tubes may become contaminated. An ir absorption near 3702 cm−1 was produced if Cab-O-Sil was degassed at 800 °C in a Vycor cell, and then partially hydrated. The band was not produced with specimens degassed in quartz cells. A variety of experiments lend strong although indirect support to the conclusion that the band was due to surface B—OH groups, brought about through the contamination of the silica surface by boron volatilized from the hot Vycor. Similar contamination can be expected to occur with all specimens heated at 800 °C in Vycor, but the effects of the contamination may not be readily discernible by means of ir spectra.
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07.30.Bx Degasification, residual gas

Factors Affecting the Adhesion of Titanium and Molybdenum Couples

K. I. Johnson and D. V. Keller

J. Vac. Sci. Technol. 4, 115 (1967); http://dx.doi.org/10.1116/1.1492532 (8 pages) | Cited 2 times

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Metallic-adhesion experiments reported in the literature have shown that softer metal couples could weld more easily than harder, and that metal couples of hexagonal atomic structure are more difficult to weld than those of cubic structure. Because of the presence of contamination in all of these studies, however, it has not been clear whether these tendencies are intrinsic properties of the metals, or simply due to a difference in the sensitivity of these materials to such contamination. Previous studies by the authors have shown that the principal barrier to adhesion between soft metals at room temperature is due solely to contamination. This work is presently extended to a metal of high hardness, a molybdenum-molybdenum adhesion couple, and to a couple of hexagonal atomic structure, titanium-titanium. Both metal couples were found to be most difficult to prepare with ultraclean surfaces; however, when this was accomplished, cold welding was observed at room temperature to approximately one-half the bulk strength of titanium and one-quarter of the bulk strength of molybdenum, respectively. The greater difficulty encountered when pressure welding harder metals or couples of hexagonal atomic structures, was shown to be due to contamination effects, and is not an inherent property of these materials. A few atomic layers of contaminant are sufficient to prevent adhesion of these metals under lightly loaded conditions. Contact resistance has been demonstrated as a useful tool for the estimation of the degree of cleanliness of the metal surfaces.
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68.35.Gy Mechanical properties; surface strains
81.20.Vj Joining; welding

Film Deposition by Exploding Wires

D. M. Mattox, A. W. Mullendore, and F. N. Rebarchik

J. Vac. Sci. Technol. 4, 123 (1967); http://dx.doi.org/10.1116/1.1492533 (5 pages) | Cited 1 time

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The exploding-wire phenomena provide a high flux of high-energy atoms incident on a surface. Electron-microscopy studies of the nucleation and growth of films formed by exploding wires in vacuum show no deviation from the typical island-channel stages of growth commonly observed in vacuum-deposited and sputter-deposited films. Observations of the deposited material give some insight into the physical processes occurring in the expanding vapor cloud from the exploding wire. Applications and limitations of this technique for depositing thin films are discussed.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Role of Hydrogen in the Sputtering of Nickel–Chromium Films

E. Stern and H. L. Caswell

J. Vac. Sci. Technol. 4, 128 (1967); http://dx.doi.org/10.1116/1.1492534 (5 pages) | Cited 9 times

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Mass-spectrometer analysis of the gases in a sputtering apparatus has demonstrated that: (1) Under normal sputtering conditions, copious quantities of hydrogen are evolved from the dissociation of adsorbed water vapor, and (2) hydrogen partial pressures as low as 5×10−7 Torr can measurably reduce sputtering rates in an argon discharge. These results have been used to develop a novel approach to thickness control of sputtered thin films. The techniques has been applied to the deposition of nickel–chromium films with a control on thickness of ±1%.
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology

Optical Properties of Reactively Evaporated Chromium Oxide Films

R. I. Frank and W. L. Moberg

J. Vac. Sci. Technol. 4, 133 (1967); http://dx.doi.org/10.1116/1.1492535 (2 pages) | Cited 6 times

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Abstract Unavailable
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78.66.Nk Insulators
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Characteristics of a New High-Vacuum Stopcock

R. G. DeZeeuw and K. D. Boultinghouse

J. Vac. Sci. Technol. 4, 134 (1967); http://dx.doi.org/10.1116/1.1492536 (2 pages)

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Abstract Unavailable
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07.30.Kf Vacuum chambers, auxiliary apparatus, and materials

All-Metal Indium Valve Seat for Large-Diameter In-Line Gate Valves

K. Welch

J. Vac. Sci. Technol. 4, 135 (1967); http://dx.doi.org/10.1116/1.1492537 (3 pages)

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Abstract Unavailable
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07.30.Kf Vacuum chambers, auxiliary apparatus, and materials

Graphic Symbols in Vacuum Technology

J. Vac. Sci. Technol. 4, 139 (1967); http://dx.doi.org/10.1116/1.1492538 (4 pages)

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Abstract Unavailable
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07.30.-t Vacuum apparatus
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