Some experimental data are given on the preparation of insulating oxide films (ZnO, In2O3, Al2O3) by the pyrolysis of approximate metal-organic compounds. It is shown that these oxide films may be prepared by the pyrolysis method with a large range of structures varying from amorphous to single crystal and with different electrophysical properties. Temperature ranges for growth of amorphous and crystalline phases were established. Using the amorphous In2O3 and Al2O3 films metal–In2O3–metal and metal–Al2O3–metal samples were prepared. These devices have two stable electrical states, namely, they may be either in a conductive or a nonconductive state. The influence of heat treatment upon the structure and resistivity of the films was studied. The In2O3 films am most sensitive to heat treatment, i.e., the amorphous films became crystalline, and in the process their resistivities decreased five orders.