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Interface-mediated ultrafast carrier conduction in oxide thin films and superlattices for energy
Shriram Ramanathan
J. Vac. Sci. Technol. A 27, 1126 (2009); doi:10.1116/1.3186616
The role of interfaces in influencing high temperature carrier transport is a fascinating problem in solid state ionics. Understanding how internal interfaces or surfaces influence kinetics and thermodynamics of charge and mass transport can lead to design and discovery of novel energy materials. Chemical stability studies and electrolytic domain boundary identification in interface-controlled oxides can provide insights into the nature of carriers that are responsive under electrochemical potentials. The ability to design and synthesize ultra-fast ion conductors that are thermally and chemically stable in a range of temperatures and oxygen pressures could potentially impact electrochemical energy conversion and storage technologies including but not limited to solid oxide fuel cells.
Mechanics of stretchable inorganic electronic materials
J. Song, H. Jiang, Y. Huang, J. A. Rogers
J. Vac. Sci. Technol. A 27, 1107 (2009); doi:10.1116/1.3168555
Brittle inorganic electronic materials can be deposited onto compliant substrates to develop stretchable electronics through the nonlinear buckling process. This paper reviews the mechanics of these materials, which reveals the fundamental physics and provides practical strategies for the construction of stretchable electronics.
Recently Published
Nanocrystalline TiO2 films were deposited on SnO2:F (FTO) coated glass substrate by the facing-target sputtering technique. Ruthenium complex-based dye was used to sensitize TiO2 films and carbon paste coated on FTO glass was used as a counterelectrode. The dye-sensitized solar cell (DSC) performan ... [J. Vac. Sci. Technol. A 28, 1269 (2010)] published Fri Sep 03, 2010.
Four π∗ resonance peaks were observed in the B-K near edge x-ray absorption fine structure spectra of boron nitride thin films prepared by magnetron sputtering. In the past, these peaks have been explained as the K-absorption of boron atoms, which are present in environment containing nitrogen vaca ... [J. Vac. Sci. Technol. A 28, 1157 (2010)] published Thu Sep 02, 2010.
Results from molecular dynamics simulations of continuous 50–200 eV Ar+ bombardment on wurtzite and zinc blende GaN surfaces are reported. A new analytical bond-order potential, originally developed for growth process studies, is used to investigate the low-energy physical sputtering of GaN compoun ... [J. Vac. Sci. Technol. A 28, 1105 (2010)] published Thu Sep 02, 2010.
The authors developed a neutral beam source consisting of a 200-mm-diameter inductively coupled plasma etcher and a graphite neutralization aperture plate based on the design of a neutral beam source that
Samukawa et al. [Jpn. J. Appl. Phys., Part 2 40, L779 (2001)]
developed. They measured flux ... [J. Vac. Sci. Technol. A 28, 1169 (2010)] published Fri Sep 03, 2010.
This article describes the structure and electrical properties of a high-k ytterbium titanium oxide (Yb2TiO5) gate dielectric deposited on Si(100) substrates through reactive cosputtering. X-ray diffraction, x-ray photoelectron spectroscopy, and atomic force microscopy were used to study the morpho ... [J. Vac. Sci. Technol. A 28, 1084 (2010)] published Thu Sep 02, 2010.
Randomly textured glass sheets in combination with a transparent conductive layer are promising as front contacts for silicon based thin-film solar cells. The authors have developed a novel method to create randomly textured glass surfaces. For the fabrication a wet chemically textured zinc oxide ( ... [J. Vac. Sci. Technol. A 28, 1255 (2010)] published Fri Sep 03, 2010.
The thermal decomposition of Ni3N thin films, deposited by chemical vapor deposition on SrTiO3 (001) and Si (100) substrates, has been studied by in situ x-ray diffraction, as well as temperature-programed controlled gas emission in both inert and hydrogen atmospheres. The decomposition at inert at ... [J. Vac. Sci. Technol. A 28, 1203 (2010)] published Fri Sep 03, 2010.
An installation for investigation of the electron stimulated desorption (ESD) from both pumping and nonpumping tubular samples was designed and built. This installation allows studying ESD and sample sticking probability as a function of electron dose up to about 1023 e−/m2, electron energy in the ... [J. Vac. Sci. Technol. A 28, 1215 (2010)] published Fri Sep 03, 2010.
