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Volume 1

Issue 4 | Oct | pp. 1795-1886

Issue 3 | Jul | pp. 1351-1764

Issue 2 | Apr | pp. 111-1339

Issue 1 | Jan | pp. 1-100

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Oct 1983

Volume 1, Issue 4, pp. 1795-1886

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Radio frequency sputtering—the significance of power input

Chris M. Horwitz

J. Vac. Sci. Technol. A 1, 1795 (1983); http://dx.doi.org/10.1116/1.572218 (6 pages) | Cited 14 times

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Radio frequency (rf) sputtering is used for the deposition and etching of thin layers. In both cases the target etch rate must be controlled, and often power input has been used as one of the controlling parameters. An earlier paper has shown that the applied rf target voltage (V_pp) was a more useful parameter, and here new data is presented which indicates that the peak‐to‐peak voltage remains the preferable parameter for both etch rate control and in transferring between machines. However, a new method is described here which obtains the discharge power by subtracting losses from the total power reading. This discharge power is shown to be related to etch rates, and can thus be used as an aid in the scaling of system sizes. In addition, this discharge power exhibits interesting behavior as the pressure is varied, at constant applied rf voltage. Three main regions are evident when etching Si with CF₄: at low pressures directional ion‐induced etching is obtained; in an intermediate region the input power rises rapidly with pressure and the etching is less directional resulting in overhang profiles; and at high pressures an isotropic etching component results in undercut profiles. The two extreme regions correlate with the commonly identified regimes of: (a) low power input, low pressure reactive sputter etching, and (b) high power input, high pressure plasma etching.

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81.65.-b	Surface treatments
79.20.Rf	Atomic, molecular, and ion beam impact and interactions with surfaces
52.80.Dy	Low-field and Townsend discharges

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Ion milling planarization for magnetic bubble devices

T. W. Hou, C. J. Mogab, and R. S. Wagner

J. Vac. Sci. Technol. A 1, 1801 (1983); http://dx.doi.org/10.1116/1.572212 (5 pages)

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An ion beam milling technique is used to planarize the SiO₂ steps in 8 μm period field‐access magnetic bubble devices. A photoresist coating is first applied over the SiO₂ steps to produce a smooth surface. The resist layer is then ion milled using conditions that give equal milling rates for the resist and SiO₂ films. The planar resist surface is thus preserved in SiO₂ after the resist layer is completely milled away. Magnetic bubble devices fabricated by this process are shown to operate at much lower in‐plane drive field than similar devices fabricated by conventional nonplanar processes.

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75.70.Kw	Domain structure (including magnetic bubbles and vortices)
85.70.-w	Magnetic devices
79.20.Rf	Atomic, molecular, and ion beam impact and interactions with surfaces
81.65.-b	Surface treatments

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Highly oriented ZnO films grown by laser evaporation

H. Sankur and J. T. Cheung

J. Vac. Sci. Technol. A 1, 1806 (1983); http://dx.doi.org/10.1116/1.572219 (4 pages) | Cited 20 times

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A relatively new deposition technique involving laser‐assisted evaporation is applied to the deposition of thin ZnO films. Highly oriented and crystalline films of ZnO were obtained by CO₂ laser evaporation of ZnO powder targets on substrates held at 50–450 °C. Optical transmission spectra of these films show a sharp cutoff at 380 nm. The refractive index, as measured by ellipsometry, is 1.98–2.04. As‐grown films are conducting (0.1–1 Ω cm), but become insulating when 0.1% Li₂O is added to the source. SAW devices built with these films proved the piezoelectric nature of laser‐evaporated ZnO. It is found that the laser deposition technique is applicable to producing device quality ZnO films with good reproducibility.

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81.15.-z	Methods of deposition of films and coatings; film growth and epitaxy
75.20.Ck	Nonmetals
43.35.Ns	Acoustical properties of thin films
73.61.Ng	Insulators

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Structural properties of titanium dioxide films deposited in an rf glow discharge

L. M. Williams and D. W. Hess

J. Vac. Sci. Technol. A 1, 1810 (1983); http://dx.doi.org/10.1116/1.572220 (10 pages) | Cited 20 times

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An rf glow discharge has been used to promote the reaction between titanium tetrachloride and oxygen in order to deposit thin films of titanium dioxide at low temperatures. Structural properties of the films have been studied as functions of deposition temperature (25 to 700 °C) and of substrate material (Si, sapphire, glass, NaCl, and Ti). Films deposited onto glass substrates were amorphous at temperatures less than 300 °C, anatase at 300 and 400 °C, a mixture of anatase and rutile at 500 °C, and only rutile at 600 °C and above. Films deposited on the other substrates showed similar behavior but the temperatures for specific crystalline forms differed for each substrate material. Deposition at low power densities and 400 °C resulted in large (∼5 μm) anatase crystallites in 1–2 μm films.

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68.55.-a	Thin film structure and morphology
81.15.Gh	Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Gh	Other heat and thermomechanical treatments

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The effects of reaction parameters on the deposition characteristics in Al₂O₃ CVD

Chul‐Soon Park, Jae‐Gon Kim, and John S. Chun

J. Vac. Sci. Technol. A 1, 1820 (1983); http://dx.doi.org/10.1116/1.572221 (5 pages) | Cited 6 times

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Deposits of aluminum oxides (Al₂O₃) have been formed by a chemical vapor deposition (CVD) technique involving the application of gas mixtures of AlCl₃, CO₂, and H₂ onto TiN coated cemented carbide substrates. The relationships between the deposition rate and various reaction parameters such as the gas flow rate, the deposition temperature, the composition of reactant gases, and the system pressure were studied. The CVD of Al₂O₃ is a thermally activated process and limited by the surface chemical reaction. The apparent activation energy is about 36 kcal/mol at 50 Torr and decreases with the increasing system pressure. The dependence of the deposition rate on the reactant gas composition is affected by the variation of the relative contents of the aluminum donor and the oxygen donor. At a low AlCl₃ mole fraction, the deposition rate increases with the AlCl₃ mole fraction; however, at higher AlCl₃ mole fractions than 1.0×10⁻² the deposition rate is mainly influenced by the H₂O‐forming reaction between CO₂ and H₂.

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81.15.Gh	Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r	Surface and interface chemistry; heterogeneous catalysis at surfaces

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Electron trapping levels in rf‐sputtered Ta₂O₅ films

Shunji Seki, Takashi Unagami, and Bunjiro Tsujiyama

J. Vac. Sci. Technol. A 1, 1825 (1983); http://dx.doi.org/10.1116/1.572222 (6 pages) | Cited 7 times

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UV‐stimulated photocurrent spectroscopy and photocurrent transient methods have been used to determine the effects of deposition parameters on the electron trapping level density and its energy distribution in rf‐sputtered Ta₂O₅ films. Results of this investigation indicate that the electron trapping level density can be greatly reduced by depositing the film at a pressure of 2×10⁻³ Torr with an rf‐magnetron sputtering system. Experimental results also indicate the presence of the distribution for traps peaked at 2.7 eV below the conduction band in Ta₂O₅ films sputtered at a pressure of 2×10⁻³ Torr. A first‐order kinetic model was used to compute trapping parameters (trap density and photoionization cross section). The results of this analysis indicate that the density of the 2.7 eV level is on the order of 4×10¹⁵ cm⁻³, which is three orders of magnitude lower than that for anodic Ta₂O₅ films, and that the photoionization cross section (at 2.7 eV) is on the order of 10⁻²⁰ cm².

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73.61.Ng	Insulators
72.20.Jv	Charge carriers: generation, recombination, lifetime, and trapping

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Stoichiometry and thickness of the initial oxide formed on clean titanium surfaces determined by quantitative Auger electron spectroscopy, electron energy loss spectroscopy, and microgravimetry

M. C. Burrell and N. R. Armstrong

J. Vac. Sci. Technol. A 1, 1831 (1983); http://dx.doi.org/10.1116/1.572223 (6 pages) | Cited 4 times

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The initial oxidation of a clean polycrystalline titanium film was studied by Auger electron spectroscopy (AES) and electron energy loss spectroscopy (ELS), while simultaneously monitoring the total oxygen uptake using the quartz crystal microbalance (QCM). Quantitation of the O KLL and Ti LMM AES intensities reveals that the surface stoichiometry at the initial stages of oxidation (<100 L O₂ at 1×10⁻⁵ Torr) corresponds to that expected for Ti₂O₃, and the ELS results also suggest the presence of the lower oxidation states of titanium (+2,+3) on the surface. The microgravimetric results indicate that the oxidation is not confined to the region sampled by the electron spectroscopic methods, and a surface layer of Ti₂O₃ whose thickness is ∼40 Å is consistent with the observed combination of results.

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81.05.Bx	Metals, semimetals, and alloys
68.60.-p	Physical properties of thin films, nonelectronic

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An investigation of the interaction of polycrystalline zirconium with O₂, N₂, CO, and N₂O. Part I

Gar B. Hoflund, David F. Cox, and Richard E. Gilbert

J. Vac. Sci. Technol. A 1, 1837 (1983); http://dx.doi.org/10.1116/1.572224 (6 pages) | Cited 2 times

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The adsorption of O₂, N₂, CO, and N₂O on polycrystalline zirconium has been studied using ESCA and AES over a wide temperature range from room temperature to nearly the melting point of zirconium. The gases adsorb dissociatively at all temperatures studied, and the room temperature sticking coefficients are low (<0.01). Heating causes migration of the adsorbate species into the bulk zirconium. Two distinct surface phases (states) of zirconium are identified. State 1 exists when the sample has not been heated above the hcp↔bcc transition temperature of 1135 K for prolonged periods while state 2 occurs after prolonged heating (the time is a function of temperature) above the transition temperature. The AES spectra and chemisorption properties of the two states are very different. State 1 AES spectra show a prominent 175 eV peak which is nearly gone in state 2 AES spectra. State 1 readily adsorbs CO and N₂ at room temperature while state 2 adsorbs relatively small amounts of CO and is almost inert to N₂. Therefore, the valence electrons responsible for the AES 175 eV peak play a significant role in the chemisorption properties of zirconium.

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68.03.Fg	Evaporation and condensation of liquids
68.43.Mn	Adsorption kinetics
64.70.K-	Solid-solid transitions
68.43.-h	Chemisorption/physisorption: adsorbates on surfaces
82.80.Pv	Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

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Growth and electrical properties of high mobility epitaxial films of Pb_0.8Sn_0.2Te deposited by vacuum evaporation

A. L. Dawar, T. D. Sadana, Pratap Kumar, S. K. Paradkar, and P. C. Mathur

J. Vac. Sci. Technol. A 1, 1843 (1983); http://dx.doi.org/10.1116/1.572225 (3 pages)

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It is reported that as‐grown vacuum evaporated thin films of Pb_0.8Sn_0.2Te were p‐type with low mobility. Annealing of these films in vacuum and under tin pressure resulted in a significant increase in mobility. The mobility of the films annealed in tin for 60 min was about 3.6 ×10³ cm²/V s.

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81.40.Rs	Electrical and magnetic properties related to treatment conditions
81.40.Ef	Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
73.61.At	Metal and metallic alloys
81.15.-z	Methods of deposition of films and coatings; film growth and epitaxy

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Fine‐grained base electrode process for Pb‐alloy Josephson technology

A. A. Bright and S. P. Klepner

J. Vac. Sci. Technol. A 1, 1846 (1983); http://dx.doi.org/10.1116/1.572226 (6 pages) | Cited 5 times

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A method of producing fine‐grained PbInAu thin films reported by Huang and co‐workers has been evaluated for use in Josephson technology integrated circuits. Both junction‐related and nonjunction characteristics of the base electrode layer were considered. It was found necessary to interchange the order of deposition of two of the layers in the vertical structure and to modify the homogenization step in the base electrode process. The fine grain size of the films was found to be due to the presence of a layer of AuIn₂ precipitates which impede grain growth.

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85.25.-j	Superconducting devices
68.55.-a	Thin film structure and morphology
74.78.-w	Superconducting films and low-dimensional structures
85.40.-e	Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

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Laser annealing of Ni(001)

R. P. McConnell, K. D. Jamison, F. B. Dunning, and G. K. Walters

J. Vac. Sci. Technol. A 1, 1852 (1983); http://dx.doi.org/10.1116/1.572227 (5 pages) | Cited 1 time

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The use of laser annealing in the preparation of a clean, well‐ordered Ni(001) surface has been investigated. The surface was cleaned by argon ion bombardment and subsequently irradiated with the fundamental output of a high power, Q‐switched ruby laser. The laser treated surface was characterized by use of Auger electron spectroscopy and both conventional and spin‐polarized LEED, and the data compared to that from a surface prepared by thermal annealing. Laser irradiation of a sputtered surface at energy densities of ∼0.8 J cm⁻² leads to complete removal of residual argon without segregation of carbon or other contaminants at the surface. However, irradiation at an elevated temperature ∼200 °C is required to obtain a well‐ordered surface. At elevated temperatures, laser annealing provides a surface with cleanness and surface order comparable to that obtained by conventional thermal annealing.

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81.40.Ef	Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.05.Bx	Metals, semimetals, and alloys
79.20.Ds	Laser-beam impact phenomena

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Optical information storage using explosive crystallization in amorphous films

C. E. Wickersham, G. Bajor, and J. E. Greene

J. Vac. Sci. Technol. A 1, 1857 (1983); http://dx.doi.org/10.1116/1.572228 (4 pages)

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Optical information storage utilizing the explosive crystallization of amorphous In_1−xGa_xSb films is reported. Information encoding is accomplished using a low power, focused laser beam to crystallize local areas of the film by normal nucleation and grain growth. The remainder of the film is ‘‘developed’’ by spontaneously propagating an explosive crystallization (EC) front. The formation can be retrieved by rastering a low intensity laser beam across the storage media and detecting the difference in optical reflectivity between the roughened EC matrix and the smooth highly reflecting laser annealed regions. A 15:1 signal‐to‐noise ratio has been obtained in initial experiments with 5 μm diameter recorded spots. The spot temperature and laser power densities required for writing with this approach are expected to be lower than in comparable techniques where melting or vaporization is required.

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42.30.-d	Imaging and optical processing
42.79.Vb	Optical storage systems, optical disks
68.55.-a	Thin film structure and morphology

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Initial wall conditioning in Doublet III

G. L. Jackson, R. E. Clausing, A. F. Lietzke, S. Ejima, L. C. Emerson, and L. Heatherly

J. Vac. Sci. Technol. A 1, 1861 (1983); http://dx.doi.org/10.1116/1.572229 (7 pages) | Cited 1 time

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The first year of operation of Doublet III, a large noncircular tokamak (R=1.43 m, a=0.45 m, B_T ≤2.6 T), was highlighted by the achievement of a plasma current in excess of 2 MA. This is partially attributed to the low Z_eff discharges made possible by wall conditioning using low temperature, low power discharge cleaning, accompanied by preconditioning of the wall and by baking. Approximately 500 h of hydrogen discharge cleaning and 25 h of oxygen discharge cleaning combined with tokamak plasma operations were required to obtain these low Z_eff tokamak discharges. During the initial cleanup of the wall, copious quantities (>100 monolayers) of carbon were removed, ultimately with greatest efficiency by oxygen discharge cleaning. During the conditioning process, monitoring the impurity removal rate with the residual gas analyzer (RGA) provided the most understandable measure of the rate of the cleanup, while an in situ Auger analysis surface diagnostic supplied and operated by ORNL was most useful in identifying the presence of heavy hydrocarbons (oil), carbides, and oxygen on the wall and monitoring the transport of limiter materials.

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28.52.-s	Fusion reactors
52.55.Fa	Tokamaks, spherical tokamaks
52.55.Hc	Stellarators, torsatrons, heliacs, bumpy tori, and other toroidal confinement devices
81.05.Bx	Metals, semimetals, and alloys

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A compact isolation valve for use in roll coaters

J. A. Dobrowolski and M. Ranger

J. Vac. Sci. Technol. A 1, 1868 (1983); http://dx.doi.org/10.1116/1.572230 (4 pages) | Cited 1 time

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An isolation valve is described that is suitable for placement between the web and the array of sources of an optical thin film roll coater. The isolation valve is very thin and has a very short stroke. It is water cooled and its O‐rings are protected from dirt and evaporant both in the closed and the open positions.

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07.30.Kf

Vacuum chambers, auxiliary apparatus, and materials

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On baking a cryopumped UHV system

R. A. A. Kubiak, W. Y. Leong, R. M. King, and E. H. C. Parker

J. Vac. Sci. Technol. A 1, 1872 (1983); http://dx.doi.org/10.1116/1.572231 (2 pages) | Cited 2 times

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The problems of the thermal loading of cryopumps during bakeout of UHV systems are considered. A simple design of thermal baffle is presented which permits baking at temperatures of 200 °C without compromising the high speed of the pump during normal system operation.

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02.30.Hq	Ordinary differential equations
07.20.Mc	Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment

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Temporary support for a UHV sample manipulator during bakeout

B. V. Hess and T. E. Felter

J. Vac. Sci. Technol. A 1, 1874 (1983); http://dx.doi.org/10.1116/1.572232 (1 page)

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It is suggested that during bakeouts, XYZ translational stages be retrofitted with hardware that supports the bellows.

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07.30.Kf	Vacuum chambers, auxiliary apparatus, and materials
06.60.Vz	Workshop procedures (welding, machining, lubrication, bearings, etc.)

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The pressure multiplier revisited

B. R. F. Kendall

J. Vac. Sci. Technol. A 1, 1875 (1983); http://dx.doi.org/10.1116/1.572233 (3 pages)

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Abstract Unavailable

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07.30.Dz

Vacuum gauges

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Surface analysis of diamondlike carbon films

A. K. Green and Victor Rehn

J. Vac. Sci. Technol. A 1, 1877 (1983); http://dx.doi.org/10.1116/1.572234 (3 pages) | Cited 9 times

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Abstract Unavailable

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68.60.-p

Physical properties of thin films, nonelectronic

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A tabletop relativistic electron beam generator

Hidenori Matsuzawa

J. Vac. Sci. Technol. A 1, 1880 (1983); http://dx.doi.org/10.1116/1.572235 (2 pages) | Cited 1 time

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A compact, tabletop relativistic electron beam generator has been designed and constructed. Electron beam pulses of 1.8 kA, FWHM of 30 ns, and 380 kV were obtained. (AIP)

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