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J. Vac. Sci. Technol. A 11, 2487 (1993); http://dx.doi.org/10.1116/1.578597 (5 pages)
Novel radio‐frequency induction plasma processing techniques
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Add to FacebookA novel plasma source combining rf inductive drive and multipole plasma confinement has been constructed to process advanced semiconductor materials. Measurements show a linear dependence of density with input power. Ion current efficiencies of 1 A per 150–300 W of input power can be achieved in argon, with lower efficiencies in electronegative gases. Applying an rf bias to a substrate immersed in the plasma allows the sheath voltage to be controlled between 8 and 300 V. Insight into the rf induction process can be gained by a simple circuit model, which represents the induction process with a transformer. The physical quantities describing the transformer can be obtained from numerical calculation of the fields of the induction coil. This plasma source can etch thin films at rates exceeding 1 μm/min.
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Received 3 September 1992
Accepted 10 April 1993
Accepted 10 April 1993
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0734-2101 (print)
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