GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

Bean, J. C.; Feldman, L. C.; Fiory, A. T.; Nakahara, S.; Robinson, I. K.

doi:doi:10.1116/1.572361

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Journal of Vacuum Science & Technology A / Volume 2 / Issue 2

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J. Vac. Sci. Technol. A 2, 436 (1984); http://dx.doi.org/10.1116/1.572361 (5 pages)

Ge_xSi_1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

J. C. Bean, L. C. Feldman, A. T. Fiory, S. Nakahara, and I. K. Robinson

AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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Ge_xSi_1−x films are grown on Si by molecular beam epitaxy and analyzed by Nomarski optical interference microscopy, Rutherford ion backscattering and channeling, x‐ray diffraction, and transmission electron microscopy. The full range of alloy compositions will grow smoothly on silicon. Ge_xSi_1−x films with x≤0.5 can be grown free of dislocations by means of strained‐layer epitaxy where lattice mismatch is accommodated by tetragonal strain. Critical thickness and composition values are tabulated for strained‐layer growth. Multiple strained layers are combined to form a Ge_xSi_1−x/Si strained‐layer superlattice.