Type of precursor and synthesis of silicon oxycarbide (SiOxCyH) thin films with a surfatron microwave oxygen/argon plasma

Walkiewicz-Pietrzykowska, Agnieszka; Espinós, J. P.; González-Elipe, Agustin R.

doi:doi:10.1116/1.2204927

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Journal of Vacuum Science & Technology A / Volume 24 / Issue 4 / Regular Articles

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J. Vac. Sci. Technol. A 24, 988 (2006); http://dx.doi.org/10.1116/1.2204927 (7 pages)

Type of precursor and synthesis of silicon oxycarbide (SiO_xC_yH) thin films with a surfatron microwave oxygen/argon plasma

Agnieszka Walkiewicz-Pietrzykowska¹, J. P. Espinós², and Agustin R. González-Elipe²

¹Centre of Molecular and Macromolecular Studies, Polish Academy of Sciences, Sienkiewicza 112, 90-363 Lodz, Poland
²Instituto de Ciencia de Materiales de Sevilla (CSIC-Universidad de Sevilla), Avenida Américo Vespucio s/n., 41092 Sevilla, Spain

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(Published online 22 May 2006)

Abstract

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Siliconelike thin films (i.e., SiO_xC_yH_z) were prepared in a microwave plasma enhanced chemical vapor deposition reactor from structurally different organosilicon precursors [i.e., hexamethyldisiloxane (HMDSO), dimethylsilane (DMS), and tetramethylsilane (TMS)]. The films were deposited at room temperature by using different oxygen/argon ratios in the plasma gas. By changing the type of precursor and the relative concentration of oxygen in the plasma, thin films with different compositions (i.e., O/C ratio) and properties are obtained. In general, raising the oxygen concentration in the plasma produces the progressive removal of the organic moieties from the films whose composition and structure then approach those of silicon dioxide. The deposition rate was highly dependent on the type of precursor, following the order HMDSO⪢DMS>TMS. The polarizabilities, optical band gaps, and surface free energy of the films also depended on the thin film composition and structure. It is proposed that the Si–O bonds existing in HMDSO is the main factor controlling the distinct reactivity of this precursor and is also responsible for the different compositions and properties of the SiO_xC_yH_z thin films prepared with very low or no oxygen in the plasma gas.

ACKNOWLEDGMENTS

The authors thank the Spanish Ministerium of Science and Education for financial support (Grant No. MAT 2004-01558). One of the authors (A.W.-P.) also thanks this institution for a sabbatical stage grant which permitted the realization of the present work at ICMSE.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
1. Deposition rate
2. Structure and composition of SiO_xC_yH_z thin films
3. Si Auger parameter
4. Optical band gap
5. Surface free energy
CONCLUSIONS

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KEYWORDS and PACS

Keywords

silicon compounds, thin films, plasma CVD, optical constants, free energy, surface energy, bonds (chemical)

PACS

81.05.-t

Specific materials: fabrication, treatment, testing, and analysis
81.15.Gh

Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Dq

Plasma-based ion implantation and deposition
68.55.A-

Nucleation and growth
68.55.-a

Thin film structure and morphology
78.66.Nk

Insulators

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History

Received 19 January 2006
Accepted 17 April 2006
Published online 22 May 2006

Digital Object Identifier

http://dx.doi.org/10.1116/1.2204927

PUBLICATION DATA

ISSN

0734-2101 (print)

Publisher

American Vacuum Society

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