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Journal of Vacuum Science & Technology A / Volume 28 / Issue 6 / Articles

J. Vac. Sci. Technol. A 28, 1307 (2010); http://dx.doi.org/10.1116/1.3484138 (5 pages)

Intrinsic p-type ZnO films fabricated by atmospheric pressure metal organic chemical vapor deposition

Yen-Chin Huang1, Zhen-Yu Li2, Li-Wei Weng1, Wu-Yih Uen1, Shan-Ming Lan1, Sen-Mao Liao1, Tai-Yuan Lin3, Yu-Hsiang Huang4, Jian-Wen Chen4, and Tsun-Neng Yang4

1Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan
2Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 TA Hsueh Road, Hsinchu 30010, Taiwan
3Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung 222, Taiwan
4Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan

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(Published online 23 September 2010)

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The structural, electrical, and optical properties of ZnO films fabricated by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) under various gas flow ratios of [H2O]/[DEZn] (VI/II ratio) ranging from 0.55 to 2.74 were systematically examined. Hall effect measurements exhibited an evident effect of the VI/II ratio on the conduction type of the intrinsic films. An n-type film was fabricated at the VI/II ratio = 0.55; however, p-type ZnO films with the hole concentration of the order of 1017 cm−3 could be achieved at VI/II ratios higher than 1.0. In particular, the highest mobility of 91.6 cm2/V s and the lowest resistivity of 0.369 Ω cm have been achieved for the specimen fabricated at the VI/II ratio = 1.10. Moreover, room-temperature photoluminescence (PL) measurements demonstrated an interstitial Zn (Zni) donor defect related emission at 2.9 eV for the n-type film, while a Zn vacancy (VZn) acceptor defect related one at 3.09 eV for the p-type films. The existence of material intrinsic defects was further confirmed by low temperature PL measurements conducted at 10 K. Conclusively, the conduction type of undoped ZnO films deposited by AP-MOCVD is resolved by the VI/II ratio used, which causes the formation of various kinds of intrinsic defects, Zni otherwise VZn. p-type ZnO films with the hole concentration in the range of (1.5–3.3)×1017 cm−3 can be achieved with good reproducibility by modulating a VI/II ratio the range 1.0–2.2 for the AP-MOCVD process.

© 2010 American Vacuum Society

ACKNOWLEDGMENTS

The authors earnestly appreciate the Institute of Nuclear Energy Research (INER) for all the technical assistance concerned with this work. The authors are also grateful to the National Science Council of Taiwan, for financially supporting the research under Contract Nos. NSC 99-2221-E-033-030 and NSC 99-2632-E-033-001-MY3.

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
  4. CONCLUSIONS

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KEYWORDS and PACS

Keywords

electric properties, Hall effect, II-VI semiconductors, impurity states, interstitials, MOCVD, optical properties, photoluminescence, semiconductor thin films, vacancies (crystal), wide band gap semiconductors, zinc compounds, p-type, ZnO, silicon, diethylzinc, de-ionized water

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History
Received 5 February 2010
Accepted 9 August 2010
Published online 23 September 2010
Digital Object Identifier
http://dx.doi.org/10.1116/1.3484138

PUBLICATION DATA

ISSN

0734-2101 (print)  
1520-8559 (online)

Publisher

American Vacuum Society

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