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J. Vac. Sci. Technol. A 28, 1307 (2010); http://dx.doi.org/10.1116/1.3484138 (5 pages)
Intrinsic p-type ZnO films fabricated by atmospheric pressure metal organic chemical vapor deposition
(Published online 23 September 2010)
© 2010 American Vacuum Society
- RESULTS AND DISCUSSION
KEYWORDS and PACS
electric properties, Hall effect, II-VI semiconductors, impurity states, interstitials, MOCVD, optical properties, photoluminescence, semiconductor thin films, vacancies (crystal), wide band gap semiconductors, zinc compounds, p-type, ZnO, silicon, diethylzinc, de-ionized water
Accepted 9 August 2010
Published online 23 September 2010
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