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Nov 2010

Volume 28, Issue 6, pp. L15-1422

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J. Vac. Sci. Technol. A 28, 1285 (2010); http://dx.doi.org/10.1116/1.3490017 (14 pages)

Patricia A. Thiel, Mingmin Shen, Da-Jiang Liu, and James W. Evans
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Asymmetric diffusion as a key mechanism in Ni/Al energetic multilayer processing: A first principles study

M. Petrantoni, A. Hemeryck, J. M. Ducéré, A. Estève, C. Rossi, M. Djafari Rouhani, D. Estève, and G. Landa

J. Vac. Sci. Technol. A 28, L15 (2010); http://dx.doi.org/10.1116/1.3491182 (3 pages)

Online Publication Date: 12 October 2010

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Adsorption and penetration of Al and Ni atoms into Ni(111) and Al(111), respectively, are investigated through first principles calculations, shedding light into the driving forces impacting Al/Ni interfaces produced during multilayer deposition. The authors show that Ni deposition follows an exothermic path toward penetration associated with small activation barriers while Al on Ni(111) path is endothermic accompanied with high activations. Moreover, Ni and Al penetrations proceed through interstitial and substitutional sites, respectively. These differentiated behaviors at early deposition stages illustrate that dual processing conditions are required to achieve the growth of specific Ni/Al interfaces during multilayer deposition processes and that a local melting process at the interface is mandatory to arrive at the formation of a proper barrier layer.
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81.16.-c Methods of micro- and nanofabrication and processing
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
68.43.Bc Ab initio calculations of adsorbate structure and reactions
68.43.Jk Diffusion of adsorbates, kinetics of coarsening and aggregation
68.43.Fg Adsorbate structure (binding sites, geometry)
68.35.Fx Diffusion; interface formation

Application of contactless electroreflectance to study the epi readiness of m-plane GaN substrates obtained by ammonothermal method

R. Kudrawiec, R. Kucharski, M. Rudziński, M. Zając, J. Misiewicz, W. Strupiński, R. Doradziński, and R. Dwiliński

J. Vac. Sci. Technol. A 28, L18 (2010); http://dx.doi.org/10.1116/1.3504359 (4 pages) | Cited 1 time

Online Publication Date: 28 October 2010

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The authors have applied contactless electroreflectance (CER) spectroscopy to study the epi readiness of m-plane GaN substrates obtained by the ammonothermal method. It has been clearly observed that the CER resonance, which is related to the energy gap transition, appears for samples with a well-polished surface. The sharpness of this resonance is directly related to the surface quality. The broadening of energy gap transition can be used as a parameter to quantify the surface quality. For samples polished with optimal conditions, this broadening (γpol) is close to the broadening observed for the cleaved GaN surface (γclev) with m-plane orientation (150–190 vs 135 meV). The quality of the polishing process can be evaluated by analyzing the γclev/γpol ratio, where γclev/γpol = 1 corresponds to an excellent polishing process. In the authors’ case, this ratio has been determined to be close to 1 for well-polished samples.
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78.20.Jq Electro-optical effects
81.65.Ps Polishing, grinding, surface finishing
71.20.Nr Semiconductor compounds
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