JVA Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

SECTION LISTING

Search Issue | RSS Feeds RSS
Previous Issue Next Issue

Mar 2011

Volume 29, Issue 2, Articles (02xxxx)

Issue Cover Spotlight Figure

J. Vac. Sci. Technol. A 29, 020801 (2011); http://dx.doi.org/10.1116/1.3559547 (17 pages)

Daphne Pappas
Enlarge Image | Read More
back to top
RSS Feeds

Status and potential of atmospheric plasma processing of materials

Daphne Pappas

J. Vac. Sci. Technol. A 29, 020801 (2011); http://dx.doi.org/10.1116/1.3559547 (17 pages) | Cited 4 times

Online Publication Date: 4 March 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This paper is a review of the current status and potential of atmospheric plasma technology for materials processing. The main focus is the recent developments in the area of dielectric barrier discharges with emphasis in the functionalization of polymers, deposition of organic and inorganic coatings, and plasma processing of biomaterials. A brief overview of both the equipment being used and the physicochemical reactions occurring in the gas phase is also presented. Atmospheric plasma technology offers major industrial, economic, and environmental advantages over other conventional processing methods. At the same time there is also tremendous potential for future research and applications involving both the industrial and academic world.
Show PACS
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.-b Surface treatments
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
87.85.J- Biomaterials
01.30.Rr Surveys and tutorial papers; resource letters
back to top
RSS Feeds

Physical vapor deposition and patterning of calcium fluoride films

L. Piñol, K. Rebello, K. Caruso, A. S. Francomacaro, and G. L. Coles

J. Vac. Sci. Technol. A 29, 021001 (2011); http://dx.doi.org/10.1116/1.3543636 (4 pages)

Online Publication Date: 14 January 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Physical vapor deposition of calcium fluoride (CaF2) thin films was performed via electron beam evaporation, resistive/thermal evaporation, and nonreactive radio frequency sputtering. Patterning of the resultant “usable” thin films was then also attempted in several ways, including by shadow mask deposition, liftoff, and direct chemical etching. Resistive evaporation produced the most stable films, having polycrystalline morphology with a moderately strong preference to the 331 orientation. The cleanest patterning results were obtained via a polymer/metal liftoff. The results and implications of each of the various deposition and patterning techniques are discussed.
Show PACS
68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.16.Rf Micro- and nanoscale pattern formation
81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.15.Cd Deposition by sputtering
68.55.J- Morphology of films

High-corrosion-resistant Al2O3 passivation-film formation by selective oxidation on austenitic stainless steel containing Al

Masafumi Kitano, Hidekazu Ishii, Yasuyuki Shirai, and Tadahiro Ohmi

J. Vac. Sci. Technol. A 29, 021002 (2011); http://dx.doi.org/10.1116/1.3543709 (9 pages) | Cited 1 time

Online Publication Date: 14 January 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have developed Al2O3 passivation film having very high anticorrosion resistance on the surface of austenitic stainless steel containing 3 wt % aluminum. Al2O3 passivation film is formed by selective oxidation of aluminum in the austenitic stainless steel in the Ar and H2 ambient including a small amount of H2O at predetermined temperatures. Al2O3 film is obtained at temperatures higher than 750 °C in the Ar and H2 ambient, where the partial pressure ratio of H2 and H2O is set higher than 2×103. Al2O3 films have been confirmed to exhibit very high anticorrosion resistance for various halogen gases and various plasma ambients (Cl2, H2, and O2) with ion-bombardment energies less than 100 eV at temperatures less than 150 °C. In the case of fluorine-gas plasma, the Al2O3 film surface has been converted to AlF3 with a depth of 15 nm, where AlF3 film is thermodynamically stable, as well as Al2O3, resulting in an excellent passivation film exhibiting very high anticorrosion capability. Moreover, the Al2O3 film surface has been confirmed to exhibit no catalytic activity for various specialty gases at temperatures less than 150 °C.
Show PACS
81.65.Kn Corrosion protection
81.65.Rv Passivation
81.65.Mq Oxidation

MIAMI: Microscope and ion accelerator for materials investigations

J. A. Hinks, J. A. van den Berg, and S. E. Donnelly

J. Vac. Sci. Technol. A 29, 021003 (2011); http://dx.doi.org/10.1116/1.3543707 (6 pages) | Cited 1 time

Online Publication Date: 19 January 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A transmission electron microscope (TEM) with in situ ion irradiation has been built at the University of Salford, U.K. The system consists of a Colutron G-2 ion source connected to a JEOL JEM-2000FX TEM via an in-house designed and constructed ion beam transport system. The ion source can deliver ion energies from 0.5 to 10 keV for singly charged ions and can be floated up to 100 kV to allow acceleration to higher energies. Ion species from H to Xe can be produced for the full range of energies allowing the investigation of implantation with light ions such as helium as well as the effects of displacing irradiation with heavy inert or self-ions. The ability to implant light ions at energies low enough such that they come to rest within the thickness of a TEM sample and to also irradiate with heavier species at energies sufficient to cause large numbers of atomic displacements makes this facility ideally suited to the study of materials for use in nuclear environments. TEM allows the internal microstructure of a sample to be imaged at the nanoscale. By irradiating in situ it is possible to observe the dynamic evolution of radiation damage which can occur during irradiation as a result of competing processes within the system being studied. Furthermore, experimental variables such as temperature can be controlled and maintained throughout both irradiation and observation. This combination of capabilities enables an understanding of the underlying atomistic processes to be gained and thus gives invaluable insights into the fundamental physics governing the response of materials to irradiation. Details of the design and specifications of the MIAMI facility are given along with examples of initial experimental results in silicon and silicon carbide.
Show PACS
29.20.-c Accelerators
29.25.-t Particle sources and targets
61.80.Jh Ion radiation effects

Spectroscopic ellipsometry and x-ray photoelectron spectroscopy of La2O3 thin films deposited by reactive magnetron sputtering

V. V. Atuchin, A. V. Kalinkin, V. A. Kochubey, V. N. Kruchinin, R. S. Vemuri, and C. V. Ramana

J. Vac. Sci. Technol. A 29, 021004 (2011); http://dx.doi.org/10.1116/1.3539069 (5 pages) | Cited 1 time

Online Publication Date: 19 January 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Lanthanum oxide (La2O3) films were grown by the reactive dc magnetron sputtering and studied their structural, chemical and optical parameters. La2O3 films were deposited onto Si substrates by sputtering La-metal in a reactive gas (Ar+O2) mixture at a substrate temperature of 200 °C. Reflection high-energy electron diffraction measurements confirm the amorphous state of La2O3 films. Chemical analysis of the top-surface layers evaluated with x-ray photoelectron spectroscopy indicates the presence of a layer modified by hydroxylation due to interaction with atmosphere. Optical parameters of a-La2O3 were determined with spectroscopic ellipsometry (SE). There is no optical absorption over spectral range λ = 250–1100 nm. Dispersion of refractive index of a-La2O3 was defined by fitting of SE parameters over λ = 250–1100 nm.
Show PACS
68.55.A- Nucleation and growth
81.15.Cd Deposition by sputtering
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.40.Pg Disordered solids

Experimental evaluation of an adaptive Joule–Thomson cooling system including silicon-microfabricated heat exchanger and microvalve components

Weibin Zhu, Jong M. Park, Michael J. White, Gregory F. Nellis, and Yogesh B. Gianchandani

J. Vac. Sci. Technol. A 29, 021005 (2011); http://dx.doi.org/10.1116/1.3545917 (6 pages)

Online Publication Date: 21 January 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This article reports the evaluation of a Joule–Thomson (JT) cooling system that combines two custom micromachined components—a Si/glass-stack recuperative heat exchanger and a piezoelectrically actuated expansion microvalve. With the microvalve controlling the flow rate, this system can modulate cooling to accommodate varying refrigeration loads. The perforated plate Si/glass heat exchanger is fabricated with a stack of alternating silicon plates and Pyrex glass spacers. The microvalve utilizes a lead zirconate titanate actuator to push a Si micromachined valve seat against a glass plate, thus modulating the flow passing through the gap between the valve seat and the glass plate. The fabricated heat exchanger has a footprint of 1×1 cm2 and a length of 35 mm. The size of the micromachined piezoelectrically actuated valve is about 1×1×1 cm3. In JT cooling tests, the temperature of the system was successfully controlled by adjusting the input voltage of the microvalve. When the valve was fully opened (at an input voltage of −30 V), the system cooled down to a temperature as low as 254.5 K at 430 kPa pressure difference between inlet and outlet at steady state and 234 K at 710 kPa in a transient state. The system provided cooling powers of 75 mW at 255 K and 150 mW at 258 K. Parasitic heat loads at 255 K are estimated at approximately 700 mW.
Show PACS
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
07.10.Cm Micromechanical devices and systems
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment

Formation of Pd nanocrystals in titanium-oxide film by rapid thermal annealing of reactively cosputtered TiPdO films

Wan-Yi Huang, Shi-Jin Ding, Hong-Bing Chen, Qing-Qing Sun, and David Wei Zhang

J. Vac. Sci. Technol. A 29, 021006 (2011); http://dx.doi.org/10.1116/1.3549112 (7 pages)

Online Publication Date: 26 January 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this article, the authors report a novel method for preparation of Pd nanocrystals embedded in TiO2 film; i.e., the TiPdO films are first deposited by reactively cosputtering Ti and Pd targets in a plasma mixture of O2 and Ar, followed by rapid thermal annealing (RTA). The experimental results indicate that the TiPdO film with a high content of Pd is inclined to produce big nanocrystals. Furthermore, the higher the RTA temperature, the bigger the Pd nanocrystals become. In addition, our analyses of the x-ray photoelectron spectroscopy spectra reveal that PdO, PdO2, Ti2O3, and TiO2 coexist in the as-deposited film, and the RTA at 600 °C leads to decomposition of the entire PdO2 and partial PdO, together with the growth of Pd nanocrystals. At the same time, the released oxygen oxidizes fully Ti2O3 into TiO2 during the decomposition. As the RTA temperature is increased up to 900 °C, more and more PdO is decomposed and the Pd nanocrystals become bigger and bigger.
Show PACS
81.07.Bc Nanocrystalline materials
61.72.Cc Kinetics of defect formation and annealing
79.60.-i Photoemission and photoelectron spectra
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
81.15.Cd Deposition by sputtering
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Surface activated bonding of copper through silicon vias and gold stud bumps at room temperature

M. M. R. Howlader, F. Zhang, M. J. Deen, T. Suga, and A. Yamauchi

J. Vac. Sci. Technol. A 29, 021007 (2011); http://dx.doi.org/10.1116/1.3549114 (7 pages) | Cited 1 time

Online Publication Date: 26 January 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A comprehensive investigation of the surfaces of copper through silicon vias (Cu-TSVs) and gold stud bumps is presented. These vias and stud bumps were bonded at room temperature using a nanobonding and interconnection equipment. The influence of heating on the bonded interface was also studied. In order to achieve an intimate contact between the Au-stud bumps and Cu-TSVs, the stud bumps were flattened under an external force of 20 N before bonding. The surface roughness of the flattened area was improved due to deformation of the bumps. Specimens with high deformation provided better alignment accuracy than those with low deformation. The Cu-TSV surface showed inhomogeneous behavior due to the influence of electroplating and chemical mechanical polishing. Tensile pulling test of the bonded interfaces showed three fractures modes in the bulk of the Au bump and the Au pad. The electrical resistance of the bonded interface was dependent on the surface morphology of the bumps and TSVs, the distance between the bumps and TSVs, the locations of the bumps and TSV with respect to the argon fast atom beams, and the distribution of external force during bonding. Heating at 200 °C for 60 h in air increased the electrical resistance of the bonded interface. This investigation shows that the vertical integration of Au/Cu at room temperature and low bonding force can be applied to three-dimensional interconnections for low cost miniaturized systems.
Show PACS
85.40.Ls Metallization, contacts, interconnects; device isolation
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.15.Pq Electrodeposition, electroplating
81.65.Ps Polishing, grinding, surface finishing

Confirmation of sample quality: X-ray and ultraviolet photoelectron spectroscopies of uranium dioxide

S.-W. Yu and J. G. Tobin

J. Vac. Sci. Technol. A 29, 021008 (2011); http://dx.doi.org/10.1116/1.3549118 (6 pages) | Cited 2 times

Online Publication Date: 26 January 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy have been utilized to demonstrate the sample quality of a UO2 specimen. This specimen is to be used in further studies with bremsstrahlung isochromat spectroscopy and Fano spectroscopy.
Show PACS
79.60.-i Photoemission and photoelectron spectra
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

High rate deep Si etching for through-silicon via applications

Itsuko Sakai, Noriko Sakurai, and Tokuhisa Ohiwa

J. Vac. Sci. Technol. A 29, 021009 (2011); http://dx.doi.org/10.1116/1.3543635 (6 pages)

Online Publication Date: 28 January 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
High rate deep Si etching for through-silicon via (TSV) applications is reported. The requirements for the Si etch process is discussed from the viewpoint of TSV size and productivity, and the effective processes are described. For “small” TSV a few microns in diameter and up to 10 μm deep, profile control is the most important requirement, For “large” TSV with diameters of more than 50 μm and depths up to 100 μm and more, an ultrahigh Si etch rate is indispensable. The “medium” TSV with diameters and depths several tens of microns requires both high etch rate and profile control. Capacitively coupled plasma MERIE at high pressure is shown to be effective, by using HBr gas chemistry for small TSV, and by using SF6 gas chemistry and high rf frequency for large and medium TSV where an extremely high etch rate can be obtained.
Show PACS
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
81.65.Cf Surface cleaning, etching, patterning

Highly textured growth of AlN films on sapphire by magnetron sputtering for high temperature surface acoustic wave applications

T. Aubert, M. B. Assouar, O. Legrani, O. Elmazria, C. Tiusan, and S. Robert

J. Vac. Sci. Technol. A 29, 021010 (2011); http://dx.doi.org/10.1116/1.3551604 (6 pages) | Cited 1 time

Online Publication Date: 31 January 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Piezoelectric aluminum nitride films were deposited onto 3 in. [0001] sapphire substrates by reactive magnetron sputtering to explore the possibility of making highly (002)-textured AlN films to be used in surface acoustic wave (SAW) devices for high temperature applications. The synthesized films, typically 1 μm thick, exhibited a columnar microstructure and a high c-axis texture. The relationship between the microstructures and process conditions was examined by x-ray diffraction (XRD), transmission electron microscopy, and atomic force microscopy analyses. The authors found that highly (002)-textured AlN films with a full width at half maximum of the rocking curve of less than 0.3° can be achieved under high nitrogen concentration and moderate growth temperature, i.e., 250 °C. The phi-scan XRD reveals the high in-plane texture of deposited AlN films. The SAW devices, based on the optimized AlN films on sapphire substrate, were characterized before and after an air annealing process at 800 °C for 90 min. The frequency response, recorded after the annealing process, confirmed that the thin films were still strong in a high temperature environment and that they had retained their piezoelectric properties.
Show PACS
81.05.Ea III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
61.72.-y Defects and impurities in crystals; microstructure
77.65.-j Piezoelectricity and electromechanical effects
77.55.H- Piezoelectric and electrostrictive films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.15.Cd Deposition by sputtering
68.55.A- Nucleation and growth

Surface melting and recrystallization of a self-assembled octanethiol monolayer on Au(111)

Fangsen Li, Wan-cheng Zhou, Lin Tang, and Quanmin Guo

J. Vac. Sci. Technol. A 29, 021011 (2011); http://dx.doi.org/10.1116/1.3551581 (4 pages) | Cited 1 time

Online Publication Date: 31 January 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors have studied the response of a self-assembled octanethiol monolayer on Au(111) to temperature using a variable temperature scanning tunneling microscope. By cycling the sample temperature from room temperature to a point where the monolayer melts and back to room temperature again, the authors observed the formation of a two-dimensional liquidlike phase at 345 K. Upon cooling down from the melted phase, recrystallization takes place first leading to the formation of a monolayer consisting of the (math×math)R30° phase and a mixed striped/disordered phase. Partial desorption takes place during melting of the self-assembled monolayer.
Show PACS
68.35.Rh Phase transitions and critical phenomena
64.75.Yz Self-assembly
64.70.dj Melting of specific substances
68.43.Nr Desorption kinetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Plasma-enhanced chemical vapor deposition synthesis of silica-silicone nanolaminates using a single precursor

Rakhi P. Patel and Colin A. Wolden

J. Vac. Sci. Technol. A 29, 021012 (2011); http://dx.doi.org/10.1116/1.3553149 (7 pages) | Cited 1 time

Online Publication Date: 2 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Plasma-enhanced chemical vapor deposition was used to deposit silica, silicone, and silica/silicone nanolaminates at room temperature using hexamethyldisiloxane (HMDSO). The rate and composition of the individual constituents may be tuned by appropriate control of parameters including the O2/HMDSO ratio and rf power. The organic content of silicone films was maximized at moderate plasma power, while carbon-free silica required high power and excess O2. Transparent silica-silicone nanolaminates were formed on polymer substrates with varying composition. Digital control over nanolaminate structure and composition was demonstrated through transmission electron microscopy imaging and spectroscopic ellipsometry. The mechanical properties of the hybrid nanolaminates tend to be closer to that of silicone, which is advantageous for applications on flexible substrates.
Show PACS
81.07.Bc Nanocrystalline materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Microstructure and residual stress of magnetron sputtered nanocrystalline palladium and palladium gold films on polymer substrates

Anna Castrup, Christian Kübel, Torsten Scherer, and Horst Hahn

J. Vac. Sci. Technol. A 29, 021013 (2011); http://dx.doi.org/10.1116/1.3554265 (6 pages)

Online Publication Date: 9 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors report the structural properties and residual stresses of 500-nm-thick nanocrystalline Pd and PdAu films on compliant substrates prepared by magnetron sputtering as a function of the pressure of the Ar-sputtering gas. Films were analyzed by x-ray diffraction, cross-sectional transmission electron microscopy, and x-ray photoelectron spectroscopy. At low pressures the metal films exhibit strong compressive stresses, which rapidly change to highly tensile with increasing pressure, and then gradually decrease. Along with this effect a change in microstructure is observed from a dense equiaxed structure at low pressures to distinctive columns with reduced atomic density at the column walls at higher pressures. The preparation of nearly stress-free dense nanocrystalline films is demonstrated.
Show PACS
81.16.-c Methods of micro- and nanofabrication and processing
81.15.Cd Deposition by sputtering
79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
68.55.-a Thin film structure and morphology
68.60.Bs Mechanical and acoustical properties

Deposition of ultrathin AlN films for high frequency electroacoustic devices

Valery V. Felmetsger, Pavel N. Laptev, and Roger J. Graham

J. Vac. Sci. Technol. A 29, 021014 (2011); http://dx.doi.org/10.1116/1.3554718 (7 pages) | Cited 1 time

Online Publication Date: 14 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors investigate the microstructure, crystal orientation, and residual stress of reactively sputtered aluminum nitride (AlN) films having thicknesses as low as 200 down to 25 nm. A two-step deposition process by the dual cathode ac (40 kHz) powered S-gun magnetron enabling better conditions for AlN nucleation on the surface of the molybdenum (Mo) bottom electrode was developed to enhance crystallinity of ultrathin AlN films. Using the two-step process, the residual in-plane stress as well as the stress gradient through the film thickness can be effectively controlled. X-ray rocking curve measurements have shown that ultrathin films grown on Mo using this technology are highly c-axis oriented with full widths at half maximum of 1.8° and 3.1° for 200- and 25-nm-thick films, respectively, which are equal to or even better than the results previously reported for relatively thick AlN films. High-resolution transmission electron microscopy and fast Fourier transform analyses have confirmed strong grain orientation in 25–100-nm-thick films. A fine columnar texture and a continuous lattice microstructure within a single grain from the interface with the Mo substrate through to the AlN surface have been elicited even in the 25-nm-thick film.
Show PACS
81.15.Cd Deposition by sputtering
68.55.A- Nucleation and growth
68.60.Bs Mechanical and acoustical properties
68.55.J- Morphology of films
61.72.-y Defects and impurities in crystals; microstructure

Ripple formation on atomically flat cleaved Si surface with roughness of 0.038 nm rms by low-energy Ar1+ ion bombardment

Shahjada A. Pahlovy, S. F. Mahmud, K. Yanagimoto, and I. Miyamoto

J. Vac. Sci. Technol. A 29, 021015 (2011); http://dx.doi.org/10.1116/1.3554636 (5 pages)

Online Publication Date: 15 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors have conducted research regarding ripple formation on an atomically flat cleaved Si surface by low-energy Ar+ ion bombardment. The cleaved atomically flat and smooth plane of a Si wafer was obtained by cutting vertically against the orientation of a Si (100) wafer. Next, the cleaved surface was sputtered by a 1 keV Ar+ ion beam at ion-incidence angles of 0°, 60°, 70°, and 80°. The results confirm the successful ripple formation at ion-incidence angles of 60°–80° and that the wavelength of the ripples increases with the increase of the ion-incidence angle, as well as the inverse of ion doses. The direction of the ripple also changes from perpendicular to parallel to the projection of the ion-beam direction along the surface with the increasing ion-incidence angle. The authors have also observed the dose effects on surface roughness of cleaved Si surface at the ion-incidence angle of 60°, where the surface roughness increases with the increased ion dose. Finally, to understand the roughening mechanism, the authors studied the scaling behavior, measured the roughness exponent α, and compared the evolution of scaling regimes with Cuerno’s one-dimensional simulation results.
Show PACS
61.82.Fk Semiconductors
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.35.bg Semiconductors
61.80.Jh Ion radiation effects

Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

N. Leick, R. O. F. Verkuijlen, L. Lamagna, E. Langereis, S. Rushworth, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels

J. Vac. Sci. Technol. A 29, 021016 (2011); http://dx.doi.org/10.1116/1.3554691 (7 pages) | Cited 3 times

Online Publication Date: 16 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The metalorganic precursor cyclopentadienylethyl(dicarbonyl)ruthenium (CpRu(CO)2Et) was used to develop an atomic layer deposition (ALD) process for ruthenium. O2 gas and O2 plasma were employed as reactants. For both processes, thermal and plasma-assisted ALD, a relatively high growth-per-cycle of ∼ 1 Å was obtained. The Ru films were dense and polycrystalline, regardless of the reactant, yielding a resistivity of ∼ 16 μΩ cm. The O2 plasma not only enhanced the Ru nucleation on the TiN substrates but also led to an increased roughness compared to thermal ALD.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.A- Nucleation and growth
64.60.Q- Nucleation

Polymer molded templates for nanostructured amorphous silicon photovoltaics

Lei Pei, Amy Balls, Cary Tippets, Jonathan Abbott, Matthew R. Linford, Jian Hu, Arun Madan, David D. Allred, Richard R. Vanfleet, and Robert C. Davis

J. Vac. Sci. Technol. A 29, 021017 (2011); http://dx.doi.org/10.1116/1.3554720 (5 pages)

Online Publication Date: 22 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Here, the authors report the fabrication of transparent polymer templates for nanostructured amorphous silicon photovoltaics using low-cost nanoimprint lithography of polydimethylsiloxane. The template contains a square two-dimensional array of high-aspect-ratio nanoholes (300 nm diameter by 1 μm deep holes) on a 500×500 nm2 pitch. A 100 nm thick layer of a-Si:H was deposited on the template surface resulting in a periodically nanostructured film. The optical characterization of the nanopatterned film showed lower light transmission at 600–850 nm wavelengths and lower light reflection at 400–650 nm wavelengths, resulting in 20% higher optical absorbance at AM 1.5 spectral irradiance versus a nonpatterned film.
Show PACS
72.40.+w Photoconduction and photovoltaic effects
88.40.H- Solar cells (photovoltaics)
Close

Your Recent History Recent History Help

Recently Viewed

  1. Work function of fluorine doped tin oxide
  2. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
  3. Isolation of exchange- and spin-orbit-driven effects via manipulation of the axis of quantization
  4. Position of segregated Al atoms and the work function: Experimental low energy electron diffraction ...
  5. Fabrication of metal-based high-aspect-ratio microscale structures by compression molding
© 2012 AVS Science & Technology of Materials, Interfaces, and Processing Help | Contact
close