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Journal of Vacuum Science & Technology A / Volume 29 / Issue 4 / Plasma Science and Technology

J. Vac. Sci. Technol. A 29, 041301 (2011); http://dx.doi.org/10.1116/1.3596606 (7 pages)

Structural and electrical characterization of HBr/O2 plasma damage to Si substrate a

a This article is based on material presented at the 57th Symposium of the American Vacuum Society, October 17-22, 2010, Albuquerque Convention Center, Albuquerque, New Mexico, USA.
Masanaga Fukasawa1, Yoshinori Nakakubo2, Asahiko Matsuda2, Yoshinori Takao2, Koji Eriguchi2, Kouichi Ono2, Masaki Minami1, Fumikatsu Uesawa1, and Tetsuya Tatsumi1

1Semiconductor Technology Development Division, Semiconductor Business Group, Professional, Device & Solutions Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243–0014, Japan
2Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606–8501, Japan

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(Published online 23 June 2011)

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Silicon substrate damage caused by HBr/O2 plasma exposure was investigated by spectroscopic ellipsometry (SE), high-resolution Rutherford backscattering spectroscopy, and transmission electron microscopy. The damage caused by H2, Ar, and O2 plasma exposure was also compared to clarify the ion-species dependence. Although the damage basically consists of a surface oxidized layer and underlying dislocated Si, the damage structure strongly depends on the incident ion species, ion energy, and oxidation during air and plasma exposure. In the case of HBr/O2 plasma exposure, hydrogen generated the deep damaged layer (∼10 nm), whereas ion-enhanced diffusion of oxygen, supplied simultaneously by the plasma, caused the thick surface oxidation. In-line monitoring of damage thicknesses by SE, developed with an optimized optical model, showed that the SE can be used to precisely monitor damage thicknesses in mass production. Capacitance–voltage (C–V) characteristics of a damaged layer were studied before and after diluted-HF (DHF) treatment. Results showed that a positive charge is generated at the surface oxide–dislocated Si interface and/or in the bulk oxide after plasma exposure. After DHF treatment, most of the positive charges were removed, while the thickness of the “Si recess” was increased by removing the thick surface oxidized layer. As both the Si recess and remaining dislocated Si, including positive charges, cause the degradation of electrical performance, precise monitoring of the surface structure and understanding its effect on device performance is indispensable for creating advanced devices.

© 2011 American Vacuum Society

ACKNOWLEDGMENTS

The authors would like to thank Shigetaka Tomiya, Shinji Tanaka, and Susumu Kusanagi of Sony Corporation for helping us obtain the HRBS and TEM data and for stimulating discussions.

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
    1. Structural characterization of plasma damage to the Si substrate (H 2 versus Ar versus O 2 plasma)
    2. Damage removal by DHF treatment (H 2 , Ar, or O 2 plasma-induced damages)
    3. Structural characterization and in-line monitoring of HBr/O 2 plasma damage to the Si substrate
    4. Ion-enhanced diffusion of oxygen through the surface oxidized layer
    5. Electrical characterization of HBr/O 2 plasma damage
  4. SUMMARY

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KEYWORDS and PACS

Keywords

ellipsometry, oxidation, plasma materials processing, plasma-wall interactions, Rutherford backscattering, semiconductor technology, silicon, substrates, transmission electron microscopy

PACS

  • 52.40.Hf

    Plasma-material interactions; boundary layer effects

  • 52.77.-j

    Plasma applications

  • 85.30.-z

    Semiconductor devices

  • 61.05.Np

    Atom, molecule, and ion scattering (for structure determination only)

RELATED DATABASES

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History
Received 24 December 2010
Accepted 6 May 2011
Published online 23 June 2011
Digital Object Identifier
http://dx.doi.org/10.1116/1.3596606

PUBLICATION DATA

ISSN

0734-2101 (print)  
1520-8559 (online)

Publisher

American Vacuum Society

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