Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Profijt, H. B.; Potts, S. E.; van de Sanden, M. C. M.; Kessels, W. M. M.

doi:doi:10.1116/1.3609974

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Journal of Vacuum Science & Technology A / Volume 29 / Issue 5 / Review Article

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J. Vac. Sci. Technol. A 29, 050801 (2011); http://dx.doi.org/10.1116/1.3609974 (26 pages)

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

H. B. Profijt, S. E. Potts, M. C. M. van de Sanden, and W. M. M. Kessels

Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

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(Published online 18 August 2011)

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Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one step of the cyclic deposition process. The use of plasma species as reactants allows for more freedom in processing conditions and for a wider range of material properties compared with the conventional thermally-driven ALD method. Due to the continuous miniaturization in the microelectronics industry and the increasing relevance of ultra-thin films in many other applications, the deposition method has rapidly gained popularity in recent years, as is apparent from the increased number of articles published on the topic and plasma-assisted ALD reactors installed. To address the main differences between plasma-assisted ALD and thermal ALD, some basic aspects related to processing plasmas are presented in this review article. The plasma species and their role in the surface chemistry are addressed and different equipment configurations, including radical-enhanced ALD, direct plasma ALD, and remote plasma ALD, are described. The benefits and challenges provided by the use of a plasma step are presented and it is shown that the use of a plasma leads to a wider choice in material properties, substrate temperature, choice of precursors, and processing conditions, but that the processing can also be compromised by reduced film conformality and plasma damage. Finally, several reported emerging applications of plasma-assisted ALD are reviewed. It is expected that the merits offered by plasma-assisted ALD will further increase the interest of equipment manufacturers for developing industrial-scale deposition configurations such that the method will find its use in several manufacturing applications.

ACKNOWLEDGMENTS

The current and past ALD team members of the Eindhoven University are thanked for their contribution to the measurements and the many fruitful discussions. This work was supported financially by the Dutch Technology Foundation STW (Thin Film Nanomanufacturing (TFN) programme) and by the NanoNextNL programme.

Article Outline

INTRODUCTION
PLASMA BASICS
PLASMA-ASSISTED ALD CONFIGURATIONS
1. Radical-enhanced ALD
2. Direct plasma ALD
3. Remote plasma ALD
4. Developments related to plasma-assisted ALD reactors
MERITS OF PLASMA-ASSISTED ALD
1. Improved material properties
2. Deposition at reduced substrate temperatures
3. Increased choice of precursors and materials
4. Good control of stoichiometry and film composition
5. Increased growth rate
6. More processing versatility in general
CHALLENGES OF PLASMA-ASSISTED ALD
SELECTED APPLICATIONS
1. Back-end-of-line processing
2. Front-end-of-line processing
  1. High-k dielectric layers
  2. Spacer-defined double patterning
3. Encapsulation
CONCLUDING REMARKS AND OUTLOOK

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KEYWORDS and PACS

Keywords

atomic layer deposition, plasma CVD, surface chemistry, thin films

PACS

68.55.A-

Nucleation and growth
81.15.Gh

Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r

Surface and interface chemistry; heterogeneous catalysis at surfaces

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History

Received 22 February 2011
Accepted 19 June 2011
Published online 18 August 2011

Digital Object Identifier

http://dx.doi.org/10.1116/1.3609974

PUBLICATION DATA

ISSN

0734-2101 (print)

1520-8559 (online)

Publisher

American Vacuum Society

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