Inductively coupled plasma etching of graded-refractive-index layers of TiO2 and SiO2 using an ITO hard mask

Noemaun, Ahmed N.; Mont, Frank W.; Cho, Jaehee; Schubert, E. Fred; Kim, Gi Bum; Sone, Cheolsoo

doi:doi:10.1116/1.3620494

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Journal of Vacuum Science & Technology A / Volume 29 / Issue 5 / Plasma Science and Technology

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J. Vac. Sci. Technol. A 29, 051302 (2011); http://dx.doi.org/10.1116/1.3620494 (6 pages)

Inductively coupled plasma etching of graded-refractive-index layers of TiO₂ and SiO₂ using an ITO hard mask

Ahmed N. Noemaun¹, Frank W. Mont¹, Jaehee Cho¹, E. Fred Schubert¹, Gi Bum Kim², and Cheolsoo Sone²

¹Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
²R&D Institute, Samsung LED, Suwon 443-744, Korea

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(Published online 9 August 2011)

Abstract

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Transparent dielectric layers with varying compositions of TiO₂ and SiO₂, and ITO are deposited on sapphire and Si substrates by using an RF sputter system. Inductively coupled plasma (ICP) reactive ion etching (RIE) of the ITO hard mask is examined under H₂, CH₄, and Cl₂ chemical environments. The slope of the sidewall and the etch residue on the sidewall of the ITO hard mask are controlled by the flow rates of H₂, CH₄, and Cl₂. ICP-RIE dry etch of TiO₂ and SiO₂ is investigated under fluorinated environments. Comparable etch rates of TiO₂ and SiO₂ (ratio ≈ 2:1) and high selectivity ≫ 1 over ITO are found. Graded-refractive-index (GRIN) layers, made up of multiple dielectric layers of TiO₂ and SiO₂, are patterned to form cylindrical pillars by ICP etching using the ITO hard mask. Fluorine containing residues are identified on the TiO₂ and SiO₂ surfaces. Various etch chemistries are investigated to obtain smooth, vertical, and residue-free sidewalls of the GRIN pillars.

ACKNOWLEDGMENTS

The authors gratefully acknowledge support from Samsung LED Co., the National Science Foundation, Sandia National Laboratories, Department of Energy, Department of Defense, Magnolia Solar, Inc., and New York State.

Article Outline

INTRODUCTION
FABRICATION
ICP-RIE DRY ETCH OF THE ITO HARD MASK
ICP-RIE DRY ETCH OF GRIN LAYERS
DISCUSSION
SUMMARY

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KEYWORDS and PACS

Keywords

dielectric thin films, indium compounds, masks, plasma materials processing, refractive index, silicon compounds, sputter deposition, sputter etching, titanium compounds, transparency

PACS

81.65.Cf

Surface cleaning, etching, patterning
77.84.Bw

Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g

Dielectric thin films
78.20.Ci

Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
52.77.Bn

Etching and cleaning

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History

Received 8 March 2011
Accepted 4 July 2011
Published online 9 August 2011

Digital Object Identifier

http://dx.doi.org/10.1116/1.3620494

PUBLICATION DATA

ISSN

0734-2101 (print)

1520-8559 (online)

Publisher

American Vacuum Society

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