Compositional study of vacuum annealed Al doped ZnO thin films obtained by RF magnetron sputtering

Shantheyanda, B. P.; Todi, V. O.; Sundaram, K. B.; Vijayakumar, A.; Oladeji, I.

doi:doi:10.1116/1.3624787

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Journal of Vacuum Science & Technology A / Volume 29 / Issue 5 / Thin Films

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J. Vac. Sci. Technol. A 29, 051514 (2011); http://dx.doi.org/10.1116/1.3624787 (9 pages)

Compositional study of vacuum annealed Al doped ZnO thin films obtained by RF magnetron sputtering

B. P. Shantheyanda¹, V. O. Todi¹, K. B. Sundaram¹, A. Vijayakumar², and I. Oladeji²

¹Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816
²Planar Energy Inc., 653 W. Michigan St., Orlando, Florida 32805

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(Published online 18 August 2011)

Abstract

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Aluminum doped zinc oxide (AZO) thin films were obtained by RF magnetron sputtering. The effects of deposition parameters such as power, gas flow conditions, and substrate heating have been studied. Deposited and annealed films were characterized for composition as well as microstructure using x ray photoelectron spectroscopy and x ray diffraction. Films produced were polycrystalline in nature. Surface imaging and roughness studies were carried out using SEM and AFM, respectively. Columnar grain growth was predominantly observed. Optical and electrical properties were evaluated for transparent conducting oxide applications. Processing conditions were optimized to obtain highly transparent AZO films with a low resistivity value of 6.67 × 10⁻⁴ Ω cm.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
CONCLUSION

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KEYWORDS and PACS

Keywords

aluminium, annealing, atomic force microscopy, crystal microstructure, electrical resistivity, grain growth, II-VI semiconductors, scanning electron microscopy, semiconductor growth, semiconductor thin films, sputter deposition, surface roughness, transparency, wide band gap semiconductors, X-ray diffraction, X-ray photoelectron spectra, zinc compounds

PACS

81.05.Dz

II-VI semiconductors
81.15.Cd

Deposition by sputtering
82.80.Pv

Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
78.66.Hf

II-VI semiconductors
73.61.Ga

II-VI semiconductors
68.35.bg

Semiconductors

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History

Received 28 March 2011
Accepted 8 July 2011
Published online 18 August 2011

Digital Object Identifier

http://dx.doi.org/10.1116/1.3624787

PUBLICATION DATA

ISSN

0734-2101 (print)

1520-8559 (online)

Publisher

American Vacuum Society

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