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Nov 2011

Volume 29, Issue 6, Articles (06xxxx)

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J. Vac. Sci. Technol. A 29, 061502 (2011); http://dx.doi.org/10.1116/1.3632999 (7 pages)

Yoon-Young Choi, Han-Ki Kim, Hyun-Woo Koo, Tae-Woong Kim, and Sung-Nam Lee
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High-efficiency and highly stable a-Si:H solar cells deposited at high rate (8 Å/s) with disilane grading process

Guofu Hou, Qihua Fan, Xianbo Liao, Changyong Chen, Xianbi Xiang, and Xunming Deng

J. Vac. Sci. Technol. A 29, 061201 (2011); http://dx.doi.org/10.1116/1.3630052 (4 pages) | Cited 1 time

Online Publication Date: 23 September 2011

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This paper presents our recent results on the high-rate deposition of high-efficiency and highly stable hydrogenated amorphous silicon (a-Si:H) solar cells with all layers deposited by 13.56 MHz radio frequency glow discharge. Using a linear disilane (Si2H6) grading process, high initial active-area efficiency of 11.42% has been obtained for the a-Si:H top cells with an effective i-layer deposition rate of 8 Å/s. It is also found that the light-soaking stability of the a-Si:H top cells is much improved by the Si2H6 grading process with the best a-Si:H top cell exhibiting only 11.2% light-induced degradation after 1000 h of light-soaking. Integrating the high-rate deposited a-Si:H top cell in an amorphous silicon/amorphous silicon germanium (a-Si:H/a-SiGe:H) tandem cell, an initial active-area efficiency of 12.57% is achieved. After light soaking for 1008 h, the stable efficiency is still as high as 11.02%, corresponding to only a 12.31% degradation. To the best of our knowledge, this is the best performance for a-Si:H based solar cells at such a high deposition rate by 13.56 MHz RF-PECVD. Possible mechanisms responsible for the superior stability of the a-Si:H solar cells deposited by the Si2H6 grading process are discussed.
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88.40.jj Silicon solar cells
88.40.hj Efficiency and performance of solar cells
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