Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy

Takayanagi, K.; Tanishiro, Y.; Takahashi, M.; Takahashi, S.

doi:doi:10.1116/1.573160

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Journal of Vacuum Science & Technology A / Volume 3 / Issue 3

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J. Vac. Sci. Technol. A 3, 1502 (1985); http://dx.doi.org/10.1116/1.573160 (5 pages)

Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy

K. Takayanagi, Y. Tanishiro, M. Takahashi, and S. Takahashi

Department of Physics, Tokyo Institute of Technology, Oh‐okayama, Meguro‐ku, Tokyo 152, Japan

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Structural analysis of the surface reconstructions investigated by ultrahigh vacuum (UHV) transmission electron microscopy (TEM) and diffraction (TED) is shown. By TED intensity analysis a new structural model of Si(111)‐7×7 is derived. The model basically consists of 12 adatoms arranged locally in the 2×2 structure, nine dimers on the sides of the triangular subunits of the 7×7 unit cell and a stacking fault layer. UHV–HREM of Si (111)‐7×7 surface is commented.