Elaboration of high aspect ratio monocrystalline silicon suspended nanobridges by low temperature alkaline treatment of dry etched trenches

Defforge, Thomas; Gautier, Gaël; Tillocher, Thomas; Dussart, Rémi; Tran-Van, François

doi:doi:10.1116/1.3665217

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Journal of Vacuum Science & Technology A / Volume 30 / Issue 1 / Letters

J. Vac. Sci. Technol. A 30, 010601 (2012); http://dx.doi.org/10.1116/1.3665217 (3 pages)

Elaboration of high aspect ratio monocrystalline silicon suspended nanobridges by low temperature alkaline treatment of dry etched trenches

Thomas Defforge¹, Gaël Gautier¹, Thomas Tillocher², Rémi Dussart², and François Tran-Van³

¹Université François Rabelais de Tours, Laboratoire de Microélectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
²Groupe de Recherches sur l’Energétique des Milieux Ionises, CNRS/Polytech’Orléans, Orléans Cedex 2, France
³Université François Rabelais de Tours, Laboratoire de Physico-Chimie des Matériaux et Biomolécules, EA 4244, Parc de Grandmont, 37200 Tours, France

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(Published online 2 December 2011)

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This paper describes the elaboration of high aspect ratio (250), high linear density (500 cm⁻¹) suspended silicon nanobridges into low concentrated alkaline solutions. Trenches were first etched into silicon using the deep reactive ion etching STiGer process. These structures were immersed into low concentrated potassium hydroxide (KOH) or tetramethylammonium hydroxide (TMAH) solutions. The behaviors of KOH and TMAH as silicon trenches etching agents (kinetic and quality of etching) were studied to optimize the silicon nanowires (SiNWs) formation and the elaboration of the suspended structures. The limits of the SiNWs thickness in these conditions were also discussed.

Article Outline

INTRODUCTION
EXPERIMENT
1. Trench etching by DRIE STiGer process
2. Nanowires development
RESULTS AND DISCUSSION
CONCLUSION

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KEYWORDS and PACS

Keywords

elemental semiconductors, nanofabrication, nanowires, silicon, sputter etching

PACS

81.65.Cf

Surface cleaning, etching, patterning
61.46.Km

Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
81.07.Gf

Nanowires
81.05.Cy

Elemental semiconductors

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History

Received 21 September 2011
Accepted 8 November 2011
Published online 2 December 2011

Digital Object Identifier

http://dx.doi.org/10.1116/1.3665217

PUBLICATION DATA

ISSN

0734-2101 (print)

1520-8559 (online)

Publisher

American Vacuum Society

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