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J. Vac. Sci. Technol. A 30, 010802 (2012); http://dx.doi.org/10.1116/1.3670745 (11 pages)

Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition

Paul Poodt1, David C. Cameron2, Eric Dickey3, Steven M. George4, Vladimir Kuznetsov5, Gregory N. Parsons6, Fred Roozeboom7, Ganesh Sundaram8, and Ad Vermeer9

1TNO, P. O. Box 6235, 5600 HE, Eindhoven, The Netherlands
2Advanced Surface Technology Research Laboratory (ASTRaL), Lappeenranta University of Technology, Prikaatinkatu 3E, FI-50100 Mikkeli, Finland
3Lotus Applied Technology, 1050 NW Compton Drive, Hillsboro, Oregon 97006
4Departments of Chemistry & Chemical Engineering, University of Colorado, Boulder, Colorado 80309
5Levitech BV, Versterkerstraat 10, 1322 AP Almere, The Netherlands
6Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27695
7TNO, P. O. Box 6235, 5600 HE, Eindhoven, The Netherlands, and Eindhoven University of Technology, P. O. Box 513, 5600 MB, Eindhoven, The Netherlands
8Cambridge NanoTech Inc., One Kendall Square, Suite B7301, Cambridge, Massachusetts, 02139
9SoLayTec BV, Dillenburgstraat 9g, 5652AM, Eindhoven, the Netherlands

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(Published online 14 December 2011)

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Atomic layer deposition (ALD) is a technique capable of producing ultrathin conformal films with atomic level control over thickness. A major drawback of ALD is its low deposition rate, making ALD less attractive for applications that require high throughput processing. An approach to overcome this drawback is spatial ALD, i.e., an ALD mode where the half-reactions are separated spatially instead of through the use of purge steps. This allows for high deposition rate and high throughput ALD without compromising the typical ALD assets. This paper gives a perspective of past and current developments in spatial ALD. The technology is discussed and the main players are identified. Furthermore, this overview highlights current as well as new applications for spatial ALD, with a focus on photovoltaics and flexible electronics.

© 2012 American Vacuum Society

ACKNOWLEDGMENTS

The authors gratefully acknowledge David Levy from Eastman Kodak for supplying information and figures. ASTRaL acknowledges Tekes—the Finnish Funding Agency for Technology and Innovation and the European Regional Development Fund—for support. The work at the University of Colorado was supported by grants from Defense Advanced Research Projects Agency and from the Center for Revolutionary Solar Photoconversion, a division of the Colorado Renewable Energy Collaboratory. Cambridge Nanotech wishes to acknowledge the FlexTech Alliance for financial support of its Roll-to-Roll ALD program.

Article Outline

  1. INTRODUCTION
  2. SPATIAL ALD
    1. Early developments
    2. Lotus Applied Technology
    3. ASTRaL
    4. Cambridge NanoTech
  3. CLOSE PROXIMITY SPATIAL ALD
    1. Eastman Kodak
    2. University of Colorado
    3. TNO
    4. ASM International
  4. FIRST INDUSTRIAL APPLICATION: PASSIVATION LAYERS FOR SILICON SOLAR CELLS
    1. Levitech
    2. SoLayTec
  5. OUTLOOK
    1. Spatial ALD for flexible electronics
      1. Thin film encapsulation and roll-to-roll ALD
      2. Oxide based thin-film transistors
    2. Deep reactive ion etching
    3. Light management for photovoltaics and lighting
    4. Textile functionalization
    5. New processes
  6. SUMMARY AND CONCLUSIONS

KEYWORDS and PACS

PACS

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 85.60.-q

    Optoelectronic devices

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PUBLICATION DATA

ISSN

0734-2101 (print)  
1520-8559 (online)

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