Atomic layer deposition of GaN at low temperatures

Ozgit, Cagla; Donmez, Inci; Alevli, Mustafa; Biyikli, Necmi

doi:doi:10.1116/1.3664102

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Journal of Vacuum Science & Technology A / Volume 30 / Issue 1 / Atomic Layer Deposition (ALD)

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J. Vac. Sci. Technol. A 30, 01A124 (2012); http://dx.doi.org/10.1116/1.3664102 (4 pages)

Atomic layer deposition of GaN at low temperatures

Cagla Ozgit, Inci Donmez, Mustafa Alevli, and Necmi Biyikli

UNAM – Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara Turkey

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(Published online 1 December 2011)

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The authors report on the self-limiting growth of GaN thin films at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) and ammonia (NH₃) as the group-III and -V precursors, respectively. GaN deposition rate saturated at 185 °C for NH₃ doses starting from 90 s. Atomic layer deposition temperature window was observed from 185 to ∼385 °C. Deposition rate, which is constant at ∼0.51 Å/cycle within the temperature range of 250 – 350 °C, increased slightly as the temperature decreased to 185 °C. In the bulk film, concentrations of Ga, N, and O were constant at ∼36.6, ∼43.9, and ∼19.5 at. %, respectively. C was detected only at the surface and no C impurities were found in the bulk film. High oxygen concentration in films was attributed to the oxygen impurities present in group-V precursor. High-resolution transmission electron microscopy studies revealed a microstructure consisting of small crystallites dispersed in an amorphous matrix.

ACKNOWLEDGMENTS

This work was performed at UNAM supported by the State Planning Organization (DPT) of Turkey through the National Nanotechnology Research Center Project. N.B. acknowledges support from Marie Curie International Re-integration Grant (Grant No. PIRG05-GA-2009-249196). M.A. acknowledges the financial support from TUBITAK (Grant No. 232.01-660/4835).

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
SUMMARY AND CONCLUSIONS

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KEYWORDS and PACS

Keywords

crystal microstructure, gallium compounds, III-V semiconductors, impurities, plasma CVD, semiconductor thin films, transmission electron microscopy, wide band gap semiconductors

PACS

81.15.Gh

Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.33.Xj

Plasma reactions (including flowing afterglow and electric discharges)
68.55.A-

Nucleation and growth
68.55.ag

Semiconductors
52.77.Dq

Plasma-based ion implantation and deposition
81.05.Ea

III-V semiconductors

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History

Received 15 August 2011
Accepted 31 October 2011
Published online 1 December 2011

Digital Object Identifier

http://dx.doi.org/10.1116/1.3664102

PUBLICATION DATA

ISSN

0734-2101 (print)

1520-8559 (online)

Publisher

American Vacuum Society

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