Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition

Chakraborty, Tonmoy; Eisenbraun, Eric T.

doi:doi:10.1116/1.3684597

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Journal of Vacuum Science & Technology A / Volume 30 / Issue 2 / Letters

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J. Vac. Sci. Technol. A 30, 020604 (2012); http://dx.doi.org/10.1116/1.3684597 (5 pages)

Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition

Tonmoy Chakraborty and Eric T. Eisenbraun

College of Nanoscale Science and Engineering, University at Albany, State University of New York, 257, Fuller Road, Albany, New York 12203

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(Published online 10 February 2012)

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Plasma enhanced atomic layer deposition (PEALD)-grown mixed phase RuTaN films has been studied as a direct plate material for Cu electroplating within interconnects. It was seen that these liners behaved as excellent Cu diffusion barrier and could be scaled down to sub-5 nm thicknesses. High resolution TEM based structural analysis of these films showed islands of Ru surrounded by amorphous region. The selected area electron diffraction pattern corresponds to the hcp phase of Ru with (101) as the primary crystallographic orientation. Scanning tunneling microscopy and atomic force microscopy suggested the Volmer–Weber growth mechanism of these liners. A series of electroplating experiments with various plating current density and time showed that a uniform bottom-up filling could be achieved in trenches with RuTaN as direct plate liners. Trenches with aspect-ratio as high as 10 could be filled uniformly. The conformality of the PEALD RuTaN process within the trenches was also found to be very promising with step-coverage over 85%.

ACKNOWLEDGMENTS

This research was supported by the Semiconductor Research Corporation (SRC) and the New York State Foundation for Science, Technology and Innovation (NYSTAR) under the New York Center for Advanced Interconnect Science and Technology (NY-CAIST).

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS
CONCLUSION

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KEYWORDS and PACS

Keywords

atomic force microscopy, atomic layer deposition, copper, crystal microstructure, crystallography, current density, diffusion barriers, electron diffraction, electroplating, plasma CVD, ruthenium compounds, scanning tunnelling microscopy, tantalum compounds, thin films, transmission electron microscopy

PACS

68.55.A-

Nucleation and growth
81.15.Gh

Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.-y

Defects and impurities in crystals; microstructure
81.15.Pq

Electrodeposition, electroplating
68.35.Fx

Diffusion; interface formation
68.37.Ps

Atomic force microscopy (AFM)

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History

Received 20 December 2011
Accepted 25 January 2012
Published online 10 February 2012

Digital Object Identifier

http://dx.doi.org/10.1116/1.3684597

PUBLICATION DATA

ISSN

0734-2101 (print)

1520-8559 (online)

Publisher

American Vacuum Society

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