Characterization and comparison of silicon nitride films deposited using two novel processes

Sharma, Vivek; Bailey, Adam; Dauksher, Bill; Tracy, Clarence; Bowden, Stuart; O’Brien, Barry

doi:doi:10.1116/1.3687423

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Journal of Vacuum Science & Technology A / Volume 30 / Issue 2 / Photovoltaics and Energy

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J. Vac. Sci. Technol. A 30, 021201 (2012); http://dx.doi.org/10.1116/1.3687423 (6 pages)

Characterization and comparison of silicon nitride films deposited using two novel processes

Vivek Sharma¹, Adam Bailey¹, Bill Dauksher¹, Clarence Tracy¹, Stuart Bowden¹, and Barry O’Brien²

¹Solar Power Lab, Arizona State University, 7700 South River Parkway, Tempe, Arizona 85284
²Flexible Display Center, Arizona State University, 7700 South River Parkway, Tempe, Arizona 85284

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(Published online 21 February 2012)

Abstract

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Hydrogenated silicon nitride films (SiN_x:H) deposited using a PECVD process enhance the performance of crystalline silicon solar cells by functioning as an efficient antireflection coating and passivating layer. In this paper, we compared two SiN_x:H novel deposition processes using two different PECVD tools—one nontraditional in process regime and the other nontraditional in type—to determine their suitability to solar cell fabrication. The parameter space was explored by employing a design of experiment methodology followed by material characterization using variable angle spectroscopic ellipsometry, reflectance, FTIR, RBS and elastic recoil detection. The thickness and reflectance of Si-rich films changed dramatically after annealing. Further, FTIR results showed that the Si–H bond peak present at 2160 cm⁻¹ in such films disappeared after a typical Al firing step. Therefore, the optimized films were deposited with a lower SiH₄/NH₃ ratio to minimize the changes in the film properties after annealing.

Article Outline

INTRODUCTION
EXPERIMENTAL DETAILS
1. Baseline silicon cell process
2. Analytical techniques
3. SiN _x :H deposition: Process 1
4. SiN _x :H deposition: Process 2
CHARACTERIZATION RESULTS AND ANALYSES
1. Process 1 results
2. Effect of RTA step
3. Process 2 results
ELECTRICAL PERFORMANCE RESULTS
CONCLUSIONS

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KEYWORDS and PACS

Keywords

annealing, elemental semiconductors, Fourier transform spectra, hydrogen, infrared spectra, plasma CVD, Rutherford backscattering, silicon, silicon compounds, solar cells, thin films

PACS

81.15.Gh

Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Gh

Other heat and thermomechanical treatments
68.55.aj

Insulators
52.77.Dq

Plasma-based ion implantation and deposition
78.30.Hv

Other nonmetallic inorganics
78.66.Nk

Insulators

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History

Received 5 August 2011
Accepted 3 February 2012
Published online 21 February 2012

Digital Object Identifier

http://dx.doi.org/10.1116/1.3687423

PUBLICATION DATA

ISSN

0734-2101 (print)

1520-8559 (online)

Publisher

American Vacuum Society

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