Blueshift in sulfur treated GaAsP/AlGaAs near surface quantum well

Pal, Suparna; Singh, S. D.; Porwal, S.; D’Souza, S. W.; Barman, S. R.; Oak, S. M.

doi:doi:10.1116/1.3679394

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Journal of Vacuum Science & Technology A / Volume 30 / Issue 2 / Surfaces

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J. Vac. Sci. Technol. A 30, 021401 (2012); http://dx.doi.org/10.1116/1.3679394 (5 pages)

Blueshift in sulfur treated GaAsP/AlGaAs near surface quantum well

Suparna Pal¹, S. D. Singh¹, S. Porwal¹, S. W. D’Souza², S. R. Barman², and S. M. Oak¹

¹Semiconductor Laser Section, Solid State Laser Division, Raja Ramanna Centre for Advanced Technology, Indore- 452013, India
²UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, 452001, M.P., India

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(Published online 1 February 2012)

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Large blueshift was observed in a near-surface GaAs_0.86P_0.14/Al_0.7Ga_0.3As quantum well upon treatment with Na₂S·xH₂O solution. Very slow etching with simultaneous surface passivation of the quantum well was obtained using this chemical treatment. Photoreflectance (PR) spectra exhibit maximum blueshift of 28 meV after treating the quantum well surface with Na₂S·xH₂O solution for 30 min (top layer thickness reduced to 10 Å). The blueshift is attributed to an increase in the confinement and/or an image charge effect due to the penetration of the wave function into vacuum. The blueshift is accompanied by a significant reduction in the broadening parameter of the observed e₁-lh₁ transition in PR spectra indicating effective passivation along with an increase in the confinement.

ACKNOWLEDGMENTS

The authors are thankful to T.K. Sharma and V.K. Dixit for their contributions in growth of the samples. The authors are also thankful to U.K. Ghosh and K. Alexander for technical support with the growth of the samples.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS
DISCUSSION
CONCLUSION

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KEYWORDS and PACS

Keywords

aluminium compounds, etching, gallium arsenide, III-V semiconductors, passivation, photoreflectance, semiconductor quantum wells, spectral line shift, wave functions

PACS

78.67.De

Quantum wells
81.05.Ea

III-V semiconductors
81.07.St

Quantum wells
81.65.Cf

Surface cleaning, etching, patterning
81.65.Rv

Passivation

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History

Received 5 September 2011
Accepted 1 January 2012
Published online 1 February 2012

Digital Object Identifier

http://dx.doi.org/10.1116/1.3679394

PUBLICATION DATA

ISSN

0734-2101 (print)

1520-8559 (online)

Publisher

American Vacuum Society

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