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Mar 2013

Volume 31, Issue 2, Articles (02xxxx)

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J. Vac. Sci. Technol. A 31, 020605 (2013); http://dx.doi.org/10.1116/1.4791669 (5 pages)

Peter J. Cumpson, Jose F. Portoles, and Naoko Sano
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Effects of rapid thermal annealing on electrical, optical, and structural properties of Ni-doped In2O3 anodes for bulk heterojunction organic solar cells

Jun Ho Kim, Tae-Yeon Seong, and Han-Ki Kim

J. Vac. Sci. Technol. A 31, 021201 (2013); http://dx.doi.org/10.1116/1.4774212 (5 pages)

Online Publication Date: 7 January 2013

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The authors investigated the effects of rapid thermal annealing (RTA) on the electrical, optical, and structural properties, and work functions of Ni-doped In2O3 (INO) anodes prepared by a DC/RF co-sputtering process for use in bulk heterojunction organic solar cells (OSCs). By RTA processing at 600 °C, the authors obtained the optimized INO anodes with a sheet resistance of 28 Ω/sq, an optical transmittance of 82.93%, and a work function of 5.02 eV, which are acceptable in OSC fabrication. In particular, the 600 °C annealed INO anode showed much higher optical transmittance in the near infrared wavelength region than the conventional ITO film, even though it had a low resistivity of 5.66 × 10−4 Ω cm. The OSC fabricated on the annealed INO anode showed a higher power convention efficiency of 2.65% than the OSC with as-deposited INO anodes (2.19%) because the fill factors of the OSC are critically dependent on the sheet resistance of the anode.
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68.55.aj Insulators
88.40.hj Efficiency and performance of solar cells
88.40.jr Organic photovoltaics
73.30.+y Surface double layers, Schottky barriers, and work functions
78.30.Hv Other nonmetallic inorganics
81.15.Cd Deposition by sputtering

Chemical reactions at CdS heterojunctions with CuInSe2

Angel Aquino and Angus Rockett

J. Vac. Sci. Technol. A 31, 021202 (2013); http://dx.doi.org/10.1116/1.4775341 (6 pages)

Online Publication Date: 9 January 2013

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The stability of the CdS/CuInSe2 (CIS) heterojunction is critical to understanding the projected lifetime of CIS devices and the effect of processing conditions on the nanoscale chemistry of the heterojunction. This article reports the results of annealing heterojunctions between CdS deposited by chemical bath deposition and single crystal and polycrystalline CIS films between 200 and 500 °C for 10 to 150 min. No atomic movement was observed by secondary ion mass spectrometry at temperatures of 300 °C and below. At 400 °C even for the shortest time studied, Cu and In were found throughout the region initially consisting of CdS only and Cd was found to have moved into the CIS. In the polycrystal, annealing at 500 °C resulted in movement of Cd throughout the CIS layer. No time dependence was observed in the 400 and 500 °C anneals indicating that a reaction had occurred forming a compound that was in thermodynamic equilibrium with the remaining CIS. Diffusion turns on rapidly between 300 and 400 °C, indicating a high activation energy for atomic movement (∼2.4 eV). The onset of diffusion is consistent with the onset of Cu diffusion in CIS.
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68.55.ag Semiconductors
66.30.Ny Chemical interdiffusion; diffusion barriers
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
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