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May 2013

Volume 31, Issue 3, Articles (03xxxx)

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J. Vac. Sci. Technol. A 31, 030801 (2013); http://dx.doi.org/10.1116/1.4794357 (24 pages)

Yalin Dong, Qunyang Li, and Ashlie Martini
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ToF-SIMS depth profiling of organic solar cell layers using an Ar cluster ion source

Vincent S. Smentkowski, Gilad Zorn, Amanda Misner, Gautam Parthasarathy, Aaron Couture, Elke Tallarek, and Birgit Hagenhoff

J. Vac. Sci. Technol. A 31, 030601 (2013); http://dx.doi.org/10.1116/1.4793730 (6 pages)

Online Publication Date: 27 February 2013

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Time-of-flight secondary ion mass spectroscopy (ToF-SIMS) is a very powerful technique for analyzing the outermost layers of organic and biological materials. The ion fluence in static SIMS is usually kept low enough to prevent decomposition of the organic/molecular species and as a result ToF-SIMS is able to detect and image high mass molecular species, such as polymer additives. Depth profiling, in contrast, uses a high ion fluence in order to remove material between each analysis cycle. Unfortunately, the high ion fluence results in not only erosion but also decomposition of the organic species. Recently, high mass Ar cluster ion sources have become available and are enabling depth profiling through organic layers. In this paper, the authors demonstrate that they can obtain and maintain molecular information throughout an organic solar cell test layer when erosion is performed using an Ar1500+ cluster ion source for material removal. Contrary they show that they cannot maintain molecular information when low energy monoatomic ion beams are used for material removal.
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88.40.H- Solar cells (photovoltaics)
88.40.jr Organic photovoltaics

Theoretical investigation of cubic B1-like and corundum (Cr1−xAlx)2O3 solid solutions

Björn Alling, Ali Khatibi, Sergei I. Simak, Per Eklund, and Lars Hultman

J. Vac. Sci. Technol. A 31, 030602 (2013); http://dx.doi.org/10.1116/1.4795392 (5 pages)

Online Publication Date: 14 March 2013

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First-principles calculations are employed to investigate the stability and properties of cubic rock-salt-like (Cr1−xAlx)2O3 solid solutions, stabilized by metal site vacancies as recently reported experimentally. It is demonstrated that the metal site vacancies can indeed be ordered in a way that gives rise to a suitable fourfold coordination of all O atoms in the lattice. B1-like structures with ordered and disordered metal site vacancies are studied for (Cr0.5Al0.5)2O3 and found to have a cubic lattice spacing close to the values reported experimentally, in contrast to fluorite-like and perovskite structures. The obtained B1-like structures are higher in energy than corundum solid solutions for all compositions, but with an energy offset per atom similar to other metastable systems possible to synthesize with physical vapor deposition techniques. The obtained electronic structures show that the B1-like systems are semiconducting although with smaller band gaps than the corundum structure.
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61.66.Fn Inorganic compounds
71.15.-m Methods of electronic structure calculations
71.20.Nr Semiconductor compounds
61.72.jd Vacancies

Enhancement of solution-processed zinc tin oxide thin film transistors by silicon incorporation

Sung Ryul Mang, Dae Ho Yoon, In Young Jeon, Ho Kyoon Chung, and Lyong Sun Pu

J. Vac. Sci. Technol. A 31, 030603 (2013); http://dx.doi.org/10.1116/1.4795760 (4 pages)

Online Publication Date: 20 March 2013

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Thin film transistors (TFTs) with Si incorporation in zinc tin oxide (ZTO) channel layer were fabricated using a sol–gel process, and the effect of Si incorporation in ZTO systems was investigated with respect to optical, structural, and electrical properties. The Si effectively controlled the generation of the oxygen vacancies examined by x-ray photoelectron spectroscopy, which affected the electrical properties of the silicon zinc tin oxide (SZTO) TFTs. As the Si concentration increased in the ZTO systems, the threshold voltage shifted in the positive direction, the on–off current ratio increased due to the effective reduction of the off current, and the subthreshold swing decreased. At a Si mole ratio 0.02, the SZTO TFTs exhibit favorable electrical properties of Vth = 3.0 V, μFE = 1.90 cm2 V−1 s−1, S.S = 0.38 V/decade, and Ion/off = 1.66 × 107. Thus, the SZTO is a promising material for backplanes of displays.
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85.30.Tv Field effect devices
61.72.jd Vacancies
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Low-temperature CVD of η-Mn3N2−x from bis[di(tert-butyl)amido]manganese(II) and ammonia

Teresa S. Spicer, Charles W. Spicer, Andrew N. Cloud, Luke M. Davis, Gregory S. Girolami, and John R. Abelson

J. Vac. Sci. Technol. A 31, 030604 (2013); http://dx.doi.org/10.1116/1.4799036 (6 pages)

Online Publication Date: 8 April 2013

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Manganese nitride films are grown by low-pressure chemical vapor deposition from the novel precursor bis[di(tert-butyl)amido]manganese(II) and ammonia. Mixed-phase films containing crystalline manganese nitride can be grown on substrates at temperatures as low as 80 °C. Above 200 °C, the films consist entirely of crystalline manganese nitride. The crystalline material has the same tetragonal unit cell as η-Mn3N2, but composition analysis of the Mn:N suggests that the material is best denoted as η-Mn3N2−x with x ∼ 0.7. Both oxygen and carbon contamination in the bulk of the films are <1 at. %. Deposition rates of up to 10 nm/min are observed. The growth of crystalline films of a ceramic material at such low temperatures and high rates is highly unusual. The authors attribute this outcome to the presence of high-moment manganese atoms in mixed valence states and to vacancies in the nitrogen sublattice; both features lower the energies needed to break and reform metal-nitrogen bonds and thus allow the deposited atoms to settle more easily into a low-energy ordered arrangement.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.aj Insulators
71.28.+d Narrow-band systems; intermediate-valence solids
61.72.jd Vacancies
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