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May 2013

Volume 31, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

J. Vac. Sci. Technol. A 31, 030801 (2013); http://dx.doi.org/10.1116/1.4794357 (24 pages)

Yalin Dong, Qunyang Li, and Ashlie Martini
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Measurement of the Auger parameter and Wagner plot for uranium compounds

Kiel S. Holliday, Wigbert Siekhaus, and Art J. Nelson

J. Vac. Sci. Technol. A 31, 031401 (2013); http://dx.doi.org/10.1116/1.4793477 (6 pages)

Online Publication Date: 22 February 2013

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In this study, the photoemission from the U 4f7/2 and 4d5/2 states and the U N6O45O45 and N67O45V x-ray excited Auger transitions were measured for a range of uranium compounds. The data are presented in Wagner plots and the Auger parameter is calculated to determine the utility of this technique in the analysis of uranium materials. It was demonstrated that the equal core-level shift assumption holds for uranium. It was therefore possible to quantify the relative relaxation energies, and uranium was found to have localized core-hole shielding. The position of compounds within the Wagner plot made it possible to infer information on bonding character and local electron density. The relative ionicity of the uranium compounds studied follows the trend UF4 > UO3 > U3O8 > U4O9/U3O7 ≈ UO2 > URu2Si2.
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79.20.Fv Electron impact: Auger emission
79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

In situ formation and electron-spectroscopic study of bis(arene) V and Cr compounds on a graphite surface

Victor M. Bermudez

J. Vac. Sci. Technol. A 31, 031402 (2013); http://dx.doi.org/10.1116/1.4794194 (8 pages)

Online Publication Date: 7 March 2013

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Thin layers of bis(arene) transition metal (TM) compounds have been formed in situ in ultra-high vacuum by depositing Cr or V metal on top of a film of benzene (Bz) or toluene (Tol) ice at 100 K on a graphite substrate. The species thus formed are Cr(C6H6)2, V(C6H6)2, or Cr(C6H5-CH3)2 (termed CrBz2, VBz2, or Cr(Tol)2), and the valence structures have been examined using electron energy loss and ultraviolet photoemission spectroscopies (ELS and UPS). The reaction is “clean” in that there is no indication of side reactions or unwanted by-products, although a small coverage of unreacted TM atoms appears unavoidable. A simple ring substituent (CH3) remains intact during the reaction. Thus, it should be possible to synthesize and study species that are not readily available (or cannot easily be made) in bulk form or that have too low vapor pressure to allow easy in situ deposition. Data have been obtained for VBz2 and Cr(Tol)2, the valence structures of which have not previously been studied in detail using UPS and ELS. Although deeper-lying arene orbitals are essentially unperturbed by formation of the bis(arene)TM sandwich, subtle differences in the TM-related orbitals have been observed and discussed in comparison to CrBz2 with the aid of density functional theory. In the case of VBz2, clear evidence is seen for a molecular reorientation during annealing, based on the ELS polarization dependence. Electron transfer between an adsorbed bis(arene)TM and graphite depends on the occupancy of the highest occupied molecular orbital (HOMO) and on its energy relative to the Fermi level (EF). The small amount of unreacted TM resulting from in situ synthesis causes a large decrease in work function, which shifts the adsorbate HOMO to below EF and thus impedes electron transfer to highly oriented pyrolytic graphite. This is an obstacle to forming doping layers by this method.
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71.20.Tx Fullerenes and related materials; intercalation compounds
73.20.At Surface states, band structure, electron density of states
78.40.Ri Fullerenes and related materials
79.20.Uv Electron energy loss spectroscopy
81.05.uf Graphite
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Subnanometer-resolution depth profiling of boron atoms and lattice defects in silicon ultrashallow junctions by ion beam techniques

Lakshmanan H. Vanamurthy, Mengbing Huang, Hassaram Bakhru, Toshiharu Furukawa, Nathaniel Berliner, Joshua Herman, Zhengmao Zhu, Paul Ronsheim, and Bruce Doris

J. Vac. Sci. Technol. A 31, 031403 (2013); http://dx.doi.org/10.1116/1.4795208 (7 pages)

Online Publication Date: 11 March 2013

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The continued research and development effort on silicon ultrashallow junctions has posed a great challenge to materials characterization, due to the need for depth profiling of dopants and silicon lattice defects with a subnanometer resolution. In this work, we report on a method combining ion beam analysis (Rutherford backscattering, ion channeling, and nuclear reaction analysis) with room-temperature UV-assisted oxidation and chemical wet etching for obtaining high-resolution (∼0.5 nm) depth distributions of total boron atoms, electrically activated boron atoms and silicon lattice defects in silicon ultrashallow junctions. The application of this method was demonstrated by profiling silicon junctions as shallow as 8 nm, created by 200-eV boron ion implantation followed annealing by various techniques. The capability to profile boron at such high resolution has resulted in observation of boron segregation. Additionally, the ability for depth profiling Si lattice defects offered by this method has aided in the understanding of thermal and laser annealing effects on defect formation in Si junctions. Our experimental results are compared with those obtained using other techniques such as secondary ion mass spectroscopy and four-point probe, and differences are discussed in detail.
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61.72.U- Doping and impurity implantation
64.75.Qr Phase separation and segregation in semiconductors
61.72.Cc Kinetics of defect formation and annealing
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Improvement of the surface quality of semi-insulating InP substrates through a novel etching and cleaning method

Jingming Liu, Youwen Zhao, Zhiyuan Dong, Fengyun Yang, Fenghua Wang, Kewei Cao, Tong Liu, Hui Xie, and Teng Chen

J. Vac. Sci. Technol. A 31, 031404 (2013); http://dx.doi.org/10.1116/1.4798309 (5 pages)

Online Publication Date: 22 March 2013

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Residual impurities and contamination on semi-insulating (SI) InP wafers are detrimental for epitaxial growth and device performance, especially because residual silicon on an SI-InP wafer surface is electrically active and generates an n-type conduction layer at the interface between the epilayer and the InP substrate. In order to reduce the concentration of Si and improve surface quality, the authors investigate a wet-chemical cleaning process for ready-to-use InP substrates. A novel and practical cleaning process was developed by adding an alkaline solution to the conventional acidic cleaning process. Time-of-flight secondary mass spectrometry, a very powerful analysis technique to characterize surfaces and investigate any organic and inorganic contamination present on the InP surface, was used after the samples were etched under different cleaning processes. The results show that the novel etching process effectively reduces the Si contamination.
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81.65.Cf Surface cleaning, etching, patterning
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
68.55.ag Semiconductors
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.15.Np Solid phase epitaxy; growth from solid phases

Vibronic fine structure in high-resolution x-ray absorption spectra from ion-bombarded boron nitride nanotubes

Mladen Petravic, Robert Peter, Marijana Varasanec, Lu Hua Li, Ying Chen, and Bruce C. C. Cowie

J. Vac. Sci. Technol. A 31, 031405 (2013); http://dx.doi.org/10.1116/1.4798271 (5 pages)

Online Publication Date: 3 April 2013

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The authors have applied high-resolution near-edge x-ray absorption fine structure measurements around the nitrogen K-edge to study the effects of ion-bombardment on near-surface properties of boron nitride nanotubes. A notable difference has been observed between surface sensitive partial electron yield (PEY) and bulk sensitive total electron yield (TEY) fine-structure measurements. The authors assign the PEY fine structure to the coupling of excited molecular vibrational modes to electronic transitions in NO molecules trapped just below the surface. Oxidation resistance of the boron nitride nanotubes is significantly reduced by low energy ion bombardment, as broken B-N bonds are replaced by N-O bonds involving oxygen present in the surface region. In contrast to the PEY spectra, the bulk sensitive TEY measurements on as-grown samples do not exhibit any fine structure while the ion-bombarded samples show a clear vibronic signature of molecular nitrogen.
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61.82.Rx Nanocrystalline materials
78.70.Dm X-ray absorption spectra
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
61.80.Jh Ion radiation effects

Low temperature oxidation of plutonium

Art J. Nelson and Paul Roussel

J. Vac. Sci. Technol. A 31, 031406 (2013); http://dx.doi.org/10.1116/1.4802596 (5 pages)

Online Publication Date: 18 April 2013

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The initial oxidation of gallium stabilized δ-plutonium metal at 193 K has been followed using x-ray photoelectron spectroscopy. On exposure to Langmuir quantities of oxygen, plutonium rapidly forms a trivalent oxide followed by a tetravalent plutonium oxide. The growth modes of both oxides have been determined. Warming the sample in vacuum, the tetravalent oxide reduces to the trivalent oxide. The kinetics of this reduction reaction have followed and the activation energy has been determined to be 38.8 kJ mol−1.
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81.65.Mq Oxidation
82.30.-b Specific chemical reactions; reaction mechanisms
82.40.-g Chemical kinetics and reactions: special regimes and techniques
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
79.60.Bm Clean metal, semiconductor, and insulator surfaces
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