H,F alloys with the Ge concentration x
ranging from 0 to 1 have been prepared by the rf glow discharge decomposition of SiF4
, and H2
gas mixtures. An ultrahigh vacuum deposition system has been designed and constructed for the preparation of these alloys. The stainless‐steel deposition chamber has Cu gasket‐sealed flanges, is turbomolecular pumped, and reaches a base pressure below 10−7
Pa). This deposition system incorporates a load lock which permits short pump‐down cycles and which may reduce impurity contamination of the films. The system is described in detail. Compositional, structural, optical, and electronic properties of alloy films made with this system are reported.