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Jan 1987

Volume 5, Issue 1, pp. 1-148


Methods in semiconductor surface chemistry

M. J. Bozack, L. Muehlhoff, J. N. Russell, W. J. Choyke, and J. T. Yates

J. Vac. Sci. Technol. A 5, 1 (1987); http://dx.doi.org/10.1116/1.574131 (8 pages) | Cited 60 times

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Methods for studying semiconductor surface chemistry are presented. It is shown that adsorption and desorption kinetic measurements, when combined with Auger spectroscopy, can give useful insights into fundamental elementary surface kinetic processes which are important in understanding the behavior of complex chemical vapor deposition, plasma vapor deposition, or reactive ion etching processes. Techniques for crystal preparation, mounting, temperature control, and reaction kinetic measurements are given using examples from the adsorption and reaction of propylene with Si(100). An illustration of the manipulation of active site availability on Si(100) is described.
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68.43.-h Chemisorption/physisorption: adsorbates on surfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.65.-b Surface treatments

Characterization and removal of ion yield transients in the near surface region of secondary ion mass spectrometry depth profiles

S. R. Bryan, R. W. Linton, and D. P. Griffis

J. Vac. Sci. Technol. A 5, 9 (1987); http://dx.doi.org/10.1116/1.574825 (6 pages) | Cited 9 times

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A method for removing ion yield transients from the beginning of secondary ion mass spectrometry (SIMS) depth profiles is evaluated. Ion yield transients, which result from the concentration buildup of yield enhancing primary ion species, may be characterized by depth profiling standards which are bulk doped with the element of interest. The transients of B+ and B− in Si were characterized using an O+2 and Cs+ primary ion beam, respectively. The resulting transient correction functions were used to correct depth profiles of 10 and 4 keV B implants in Si.
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82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
61.72.uf Ge and Si
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
07.75.+h Mass spectrometers

Plasma luminescence generated in laser evaporation of dielectrics

H. Sankur, J. G. Nelson, A. T. Pritt, and W. J. Gunning

J. Vac. Sci. Technol. A 5, 15 (1987); http://dx.doi.org/10.1116/1.574130 (7 pages) | Cited 10 times

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Emission from the plasma generated when a pulsed CO2 laser is used to evaporate dielectric materials is analyzed in the 200–900 nm region by means of an optical multichannel analyzer. Atomic spectra consisting of excited neutral and singly, doubly, and triply ionized species were observed from laser irradiation of Al2O3, SiO2, ZnO, PbF2, TiO2, and HfO2. Emission from the B–X transition of AlO was observed under vacuum conditions becoming more intense in the presence of added gases. Assuming local thermal equilibrium, plasma temperatures were calculated using the emission intensities of several selected atomic species. Possible effects of the observed phenomena on the properties of thin films deposited by laser‐assisted deposition are discussed.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
32.30.-r Atomic spectra

Characterization of a Ti vacuum arc and the structure of deposited Ti and TiN films

P. J. Martin, R. P. Netterfield, D. R. McKenzie, I. S. Falconer, C. G. Pacey, P. Tomas, and W. G. Sainty

J. Vac. Sci. Technol. A 5, 22 (1987); http://dx.doi.org/10.1116/1.574132 (7 pages) | Cited 12 times

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The energy of Ti neutrals and Ti+ ions was determined in the region of the cathode spot of a Ti vacuum arc by measurement of the Doppler broadened profiles of Ti(I) and Ti(II) emission lines using Fabry‐Perot interferometry. Energy analysis of Ti+ and Ti++ was carried out at a distance from the cathode using an electrostatic analyzer. The emission lines showed that the neutrals had energies corresponding to approximately 0.4 eV while the Ti+ ions had a most probable energy of 3 eV. The energy analyzer showed that remote from the cathode spot Ti+ had a most probable energy of 80 eV. This large difference is explained in terms of a simple model for the arc which includes a potential ‘‘hump’’ near the cathode. The charge fraction of the evaporant was measured to be approximately 0.5, and the effect of nitrogen background gas on the energy distribution was observed. Deposited films of Ti and TiN were prepared and the influence of substrate bias investigated. It was found that under high negative bias the Ti films exhibited a preferred 〈110〉 orientation consistent with previous studies of ion‐beam‐induced textures.
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52.80.Vp Discharge in vacuum
68.55.-a Thin film structure and morphology
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Ion–molecule reactions in a direct current silane glow discharge

H. A. Weakliem, R. D. Estes, and P. A. Longeway

J. Vac. Sci. Technol. A 5, 29 (1987); http://dx.doi.org/10.1116/1.574133 (8 pages) | Cited 21 times

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We have measured the composition distribution of positive silane ions in a dc silane glow discharge as a function of pressure, flow, and cathode‐to‐anode separation. The ions were sampled through the anode and were analyzed by a mass spectrometer. When the sampling aperture is close to the negative glow, the monosilane ions are dominant, whereas when the aperture is moved further from the negative glow, successively larger ions are found to dominate. The physical properties of the amorphous silicon films which are deposited on the anode also depend on the distance to the cathode. Correlations between the properties of the films and the ionic composition of the plasma have been made and we have discussed the implications of these results with regard to the mechanism by which the solid film is formed from gaseous species.
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52.80.Hc Glow; corona
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Aluminum alloy ultrahigh vacuum chamber for molecular beam epitaxy

Maki Suemitsu, Tetsuya Kaneko, and Nobuo Miyamoto

J. Vac. Sci. Technol. A 5, 37 (1987); http://dx.doi.org/10.1116/1.574134 (7 pages) | Cited 5 times

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An aluminum alloy molecular beam epitaxy chamber has been constructed and its vacuum properties tested. Prior to the construction an oil‐free lathing technique was developed and was applied to the inner surface of the chamber, which resulted in an extremely low outgassing rate of the order of 10−11 Torr 1/s cm2 before bakeout and less than 1×10−13 Torr 1/s cm2 after a 100 °C, 45‐h bakeout. This low outgassing rate of the material enabled the chamber to be pumped down from atmospheric pressure to the order of 10−10 Torr in 23 h of evacuation without bakeout and in only 6 h with bakeout. With this short pumpdown time and its great reduction in bakeout temperature and time together with its reduced weight and the low cost, the aluminum alloy ultrahigh vacuum system provides us with a remarkably convenient tool to access the ultrahigh vacuum region.
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07.30.Hd Vacuum testing methods; leak detectors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Effect of energetic neutralized noble gas ions on the structure of ion beam sputtered thin metal films

E. Kay, F. Parmigiani, and W. Parrish

J. Vac. Sci. Technol. A 5, 44 (1987); http://dx.doi.org/10.1116/1.574135 (8 pages) | Cited 18 times

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Energetic ion bombardment of a sputtering target often results in a significant fraction of incident ions being reflected as energetic neutrals in the direction of the growing film. Experiments are described which test the degree to which bombardment by these energetic backscattered neutrals can influence the microstructure of a growing film. As anticipated, microstructural changes of the film are influenced by the reflection coefficient and energy exchange of a given energetic gas ion at the sputtering target which in turn depends on the mass ratio of the sputtering gas to that of the target. Whereas the sputtered metal species leave the target with a near cosine distribution, evidence for a strong noncosine reflection preference in the forward direction for the energetic backscattered neutrals will be given. Very careful x‐ray diffraction studies show that films grown in a Ne/Pd system give rise to lattice dilation in the (111) lattice planes resulting in a 1% increase in the lattice parameter over Pd bulk values. On the other hand, in the Xe/Cu system no significant changes from bulk unit cell dimensions were observed. Data are also presented to show lattice distortions induced by deliberate energetic ion bombardment during film growth involving normalized energies much greater than that obtainable by energetic neturals. X‐ray data show that lattice distortions and preferred crystallographic orientation induced by equivalent energetic particle bombardment differs significantly for different metals.
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61.80.Jh Ion radiation effects
68.55.-a Thin film structure and morphology
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Unbalanced potential discharge characteristics for opposed‐targets sputtering system

Morito Matsuoka, Yoichi Hoshi, and Masahiko Naoe

J. Vac. Sci. Technol. A 5, 52 (1987); http://dx.doi.org/10.1116/1.574136 (5 pages) | Cited 1 time

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In the opposed‐targets sputtering system (OTSS), plasma is focused in the space between opposed targets by magnetic and electric fields. Usually, since an equal potential is applied to the targets, the discharge is in the balanced potential mode. In this study, unbalanced potential (UP) modes of discharge characteristics are investigated for the OTSS. Discharge characteristics strongly depend on the unbalanced voltage applied to the opposed targets. UP is seen to promote strong ionization just as the plasma confinement field and other discharge parameters do.
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81.15.Cd Deposition by sputtering
79.20.-m Impact phenomena (including electron spectra and sputtering)
52.80.-s Electric discharges

Recent developments in the production of thin‐film magnetic media by electron beam evaporation

Michael Wright

J. Vac. Sci. Technol. A 5, 57 (1987); http://dx.doi.org/10.1116/1.574137 (4 pages)

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The design and operation of an electron beam roll coating machine, utilizing oblique angle incidence of the evaporant, for the production of magnetic tape is outlined. The use of a magnetic bending system and backscattered electron confinement is discussed with respect to the particular problems associated with the coating of thin polymer films. Preliminary results are reported for magnetic tape produced on such a machine with respect to magnetic and structural properties which indicate that the product exhibits characteristics suitable for video recording.
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85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Ion bombardment effect on preferred orientation in Ni–Fe film formed by ion beam sputtering

Yasuhiro Nagai, Akio Tago, and Tomoyuki Toshima

J. Vac. Sci. Technol. A 5, 61 (1987); http://dx.doi.org/10.1116/1.574138 (6 pages) | Cited 9 times

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This paper reports on the results of experimental investigation into the preferred orientation of Ni–Fe film formed by ion beam sputtering. Through experiments concerning ion bombardment and substrate temperature, argon ion bombardment is found to increase the amount of the (111) crystal texture in addition to contributing to the texture orientation itself. In terms of film morphology, the fracture cross section indicates a more obvious columnar structure with the film surface becoming slightly rougher as the amount of argon ion bombardment increases. Conversely, nitrogen and oxygen‐mixed ion bombardment weakens the (111) preferred orientation, and the effect becomes more notable when the ion has a higher energy. On the other hand, although the substrate temperature increase makes the (111) texture better oriented, the amount of the crystal texture becomes smaller due to this temperature increase. Additionally, the observed lattice distortion corresponds well to that estimated by the internal stress.
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61.80.Jh Ion radiation effects
68.55.-a Thin film structure and morphology
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Adhesion and toughness of protective coatings

M. T. Laugier

J. Vac. Sci. Technol. A 5, 67 (1987); http://dx.doi.org/10.1116/1.574139 (3 pages) | Cited 1 time

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Coatings must be both tough and adherent to afford mechanical protection under tribological conditions. Adhesion energies of TiN protective coatings on cemented carbides produced by chemical vapor deposition and physical vapor deposition techniques are determined using an energy formulation of the scratch test. Toughness of the coatings is determined from Hertzian indentation with flat punches; behavior of coatings under sliding Hertzian loads is considered.
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62.20.Qp Friction, tribology, and hardness
68.35.Gy Mechanical properties; surface strains

Influence of composition and process parameters on the internal stress of the carbides of tungsten, chromium, and titanium

E. Bergmann and J. Vogel

J. Vac. Sci. Technol. A 5, 70 (1987); http://dx.doi.org/10.1116/1.574140 (5 pages) | Cited 1 time

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We have investigated the relationship between deposition process and mechanical properties of metal+carbon coatings of three different metals. We used a conventional sputtering system, equipped with planar magnetrons, whose configuration can be scaled up easily to an industrial batch coater. Metal as well as carbide targets were compared and acetylene was used as a reactive gas. The films were deposited onto substrates made of a high‐speed steel. Internal stresses were determined by measuring mechanically the flexture of a thin disk. The variation of the mechanical properties, internal stress, and hardness were completely different for the three metals.
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68.60.Bs Mechanical and acoustical properties
68.55.Nq Composition and phase identification
81.15.Cd Deposition by sputtering
81.40.Lm Deformation, plasticity, and creep

Microstructural aspects of vacuum annealing‐induced solute depletion in sputter‐deposited 304 stainless‐steel films

P. M. Fabis

J. Vac. Sci. Technol. A 5, 75 (1987); http://dx.doi.org/10.1116/1.574820 (7 pages)

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Type 304 stainless‐steel (SS) films were dc‐planar‐magnetron sputter deposited onto substrates maintained at 77 K. The as‐deposited ferromagnetic films of bcc symmetry possessed equiaxed and columnar grain morphologies in the size range of 10–20 nm. These nanocrystalline films were found to be compositionally homogeneous and to be identical in composition to the sputtering target. Interest in protective coating application for these films stimulated a thermal stability investigation of their microstructure. Following vacuum annealing at 1146 K at 1.33×10−3 Pa for 15 min, analytical electron microscopy was performed on cross‐sectional specimens revealing (1) a significant Cr depletion from 18.1 wt. % at 775 nm to 4.4 wt. % at 20‐nm depth from the film surface, (2) a slight Ni depletion from 8.9 to 8.1 wt. % over the depth (from surface) increment of 75 to 20 nm, and (3) a near‐surface bcc–fcc phase transformation and associated grain size increases. Theoretical weight loss and surface Cr concentration calculations did not take into account the microstructural effects on the solute depletion profile and, therefore, were not in good agreement with the experimental analyses conducted under identical exposure conditions. Stereological analyses revealed that the nanocrystalline microstructure contained approximately 1017 interfaces/cm3 which comprised over 106 cm2/cm3 (≊100 m2/cm3) of interfacial material. The grain size–grain morphology relationship was quantified and results indicated it to be complex; very small multifaceted grains comprising a film which possessed a large volume fraction of interfacial material. Calculations of grain matrix (lattice) and interfacial (grain boundary) Cr flux have shown the interfacial component to be significantly greater than the flux emerging from grain matrix regions. The disordered characteristics of the interfacial material relaxed the requirements for transport along, and evaporation from, these interfacial regions thereby significantly enhancing the Cr loss from these films.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.55.-a Thin film structure and morphology
68.60.Dv Thermal stability; thermal effects

In situ measurement of coating thickness during thermal spraying using an optical displacement meter

S. Kuroda, T. Fukushima, and S. Kitahara

J. Vac. Sci. Technol. A 5, 82 (1987); http://dx.doi.org/10.1116/1.574821 (6 pages)

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An optical diplacement meter was developed to measure and control the thickness of coatings deposited by thermal spraying. The displacement of the surface of a workpiece was monitored continuously during the spraying process by detecting the position of a bright spot made on the surface by laser illumination using a linear image sensor. A cylindrical lens was used to reduce the error due to speckle and a differential method was employed to discriminate the coating thickness from the displacement due to thermal deformation. By stopping deposition when the meter output reached a predetermined value, the thickness of plasma sprayed alumina coating could be controlled with a standard deviation of 24 μm.
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06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
07.60.-j Optical instruments and equipment
81.20.-n Methods of materials synthesis and materials processing

Induced drift currents in circular planar magnetrons

S. M. Rossnagel and H. R. Kaufman

J. Vac. Sci. Technol. A 5, 88 (1987); http://dx.doi.org/10.1116/1.574822 (4 pages) | Cited 34 times

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The circulating E×B drift currents in a circular planar magnetron have been measured as a function of discharge parameters. The drift current was calculated from the magnetic field measured at a probe located over the center of the drift loop. The drift current was found to vary almost linearly with magnetron discharge current over the entire range of the magnetron power capability. The drift current‐to‐discharge ratio ranged from 2.5–9 and was dependent on gas pressure, and to some extent on gas species and cathode material. This ratio was derived using both classical two‐body relations and also Bohm diffusion considerations. The results of the Bohm diffusion calculations are in close agreement with the experimental measurements. An additional feature confirming the Bohm diffusion results is the weak dependence of the observed drift current on gas species. Bohm diffusion is based on turbulent, collective interactions between electrons and the choice of gas species should only have an indirect effect through the electron density and temperature.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
81.15.Cd Deposition by sputtering
41.60.-m Radiation by moving charges
52.80.-s Electric discharges

Microdischarges on an electron gun under high vacuum

Hisao Watanabe, Nagamitsu Yoshimura, Shoji Katoh, and Nobuyuki Kobayashi

J. Vac. Sci. Technol. A 5, 92 (1987); http://dx.doi.org/10.1116/1.574823 (6 pages)

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Two types of microdischarges on an electron gun operated at 100 kV—one of which occurs between the high‐voltage electrodes and the other over the insulator surface—were experimentally examined, by concentrating the greatest interest on gas molecules on the respective surfaces. Microdischarges between the high‐voltage electrodes in high vacuum were induced by gas molecules adsorbed on the electrode surfaces. Argon glow cleaning showed a distinct conditioning effect on the electrode surfaces. Microdischarges over the insulator surface were enhanced by the outgassing from the insulator. The reason is that the insulator surface with a high density of gas molecules causes high yield secondary electron emission, leading to positive charge‐up over the insulator surface. Thermal degassing for the electrodes and insulator showed a conditioning effect to reduce microdischarges between the electrodes and over the insulator surface.
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84.47.+w Vacuum tubes
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
52.80.Vp Discharge in vacuum

An analysis of equations for flow in thin, rectangular channels

John F. O’Hanlon

J. Vac. Sci. Technol. A 5, 98 (1987); http://dx.doi.org/10.1116/1.574824 (3 pages) | Cited 2 times

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There are three methods for calculating the gas flow in thin, rectangular channels anywhere in the viscous flow region (incompressible viscous flow, or compressible viscous flow with choked or unchoked exit). Two of these models have been compared to experimental data in a limited range of channel length‐to‐thickness ratio L/e. However, they have not been compared to experimental data over a wide enough L/e range to establish bounds on their usefulness. We have compared methods of Sasaki and Yasunaga and Kieser and Grundner and observed the former technique to agree with experimental data for the range L/e > 150 for viscous flow, unchoked exit, while the latter is in agreement over the range 8 < L/e < 400, for molecular, transition, and viscous flow (choked or unchoked exit). We examine a new model for flow in choked ducts proposed by Santeler and show that it agrees with measurements in the viscous flow region (thickness‐to‐mean free path ratio e/λ > 100) with choked exit for all values of L/e except for the largest. A correction to the method of Kieser and Grundner is offered which improves its accuracy for long channels in the high pressure region.
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47.60.-i Flow phenomena in quasi-one-dimensional systems

Evaluation of charcoal sorbents for helium cryopumping in fusion reactors

Albert G. Tobin, Douglas W. Sedgley, Thomas H. Batzer, and Wayne R. Call

J. Vac. Sci. Technol. A 5, 101 (1987); http://dx.doi.org/10.1116/1.574141 (5 pages) | Cited 1 time

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Improved methods for cryopumping helium were developed for application to fusion reactors where high helium generation rates are expected. In this study, small coconut charcoal granules were utilized as the sorbent, and braze alloys and low temperature curing cements were used as the bonding agents for attachment to a copper support structure. Problems of scale‐up of the bonding agent to a 40 cm diam panel were also investigated. Our results indicate that acceptable helium pumping performance of braze bonded and cement bonded charcoals can be achieved over the range of operating conditions expected in fusion reactors.
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07.30.Cy Vacuum pumps
28.52.-s Fusion reactors
52.55.Fa Tokamaks, spherical tokamaks
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Characterization of reactively evaporated SiOx thin films

Michael J. O’Leary and J. H. Thomas

J. Vac. Sci. Technol. A 5, 106 (1987); http://dx.doi.org/10.1116/1.574142 (4 pages) | Cited 6 times

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Thin films of suboxides of silicon (SiOx, 1.4<x<2.0) were deposited by the well‐known method of reactive evaporation of SiO in an oxygen ambient onto unheated substrates. The films were characterized by ellipsometry, Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), and x‐ray photoelectron spectroscopy (XPS). Bulk compositions were provided by the RBS analysis and AES elemental depth profiles. XPS data indicate that the bonding of silicon in the deposits have both SiO and SiO2 coordination.
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68.55.Nq Composition and phase identification
78.66.-w Optical properties of specific thin films
68.60.Wm Other nonelectronic physical properties

Facing targets sputtering system for depositing Co–Cr perpendicular magnetic recording media

Yoshiro Niimura and Masahiko Naoe

J. Vac. Sci. Technol. A 5, 109 (1987); http://dx.doi.org/10.1116/1.574143 (2 pages)

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Abstract Unavailable
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81.15.Cd Deposition by sputtering
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
68.55.-a Thin film structure and morphology

Schottky barriers on MgxZn1−xTe alloys

F. El Akkad, A. Felimban, and F. Sallam

J. Vac. Sci. Technol. A 5, 111 (1987); http://dx.doi.org/10.1116/1.574144 (3 pages) | Cited 5 times

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Indium surface barriers on MgxZn1−xTe alloys have been investigated. For the composition x=0 (ZnTe), capacitance–voltage and photoelectric measurements yielded a barrier height ϕB of 1.84+0.02 eV. A gradual decrease of ϕB with increasing Mg content has been observed through photoelectric measurements. The results are interpreted on the basis of the simple Schottky theory. Electron affinity values in the range 3.68>χs>2.79 eV have been deduced for MgxZn1−xTe in the composition range 0<x<0.28.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ga II-VI semiconductors

A sequential masking system for the deposition of multilayer thin‐film structures

C. J. Bowler and R. D. Gould

J. Vac. Sci. Technol. A 5, 114 (1987); http://dx.doi.org/10.1116/1.574118 (2 pages) | Cited 5 times

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Abstract Unavailable
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.65.-b Surface treatments

An economical ultrahigh vacuum four‐point resistivity probe

Jon W. Erickson and Steve Semancik

J. Vac. Sci. Technol. A 5, 115 (1987); http://dx.doi.org/10.1116/1.574119 (3 pages) | Cited 7 times

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Abstract Unavailable
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07.50.-e Electrical and electronic instruments and components
73.25.+i Surface conductivity and carrier phenomena

A movable sample stub for heating and cooling with integral thermocouple for use with the VG Scientific ESCALAB Mk.II

J. M. Lindquist and John C. Hemminger

J. Vac. Sci. Technol. A 5, 118 (1987); http://dx.doi.org/10.1116/1.574120 (2 pages) | Cited 1 time

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Abstract Unavailable
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06.60.Sx Positioning and alignment; manipulating, remote handling
06.60.Ei Sample preparation (including design of sample holders)

Inexpensive ion bombardment in ultrahigh vacuum

T. McCabe, J. Somers, M. E. Bridge, and D. R. Lloyd

J. Vac. Sci. Technol. A 5, 119 (1987); http://dx.doi.org/10.1116/1.574121 (2 pages) | Cited 2 times

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Abstract Unavailable
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07.77.-n Atomic, molecular, and charged-particle sources and detectors
07.30.Kf Vacuum chambers, auxiliary apparatus, and materials

Erratum: Transfer leak studies and comparisons of primary leak standards at the National Bureau of Standards and Sandia National Laboratories [J. Vac. Sci. Technol. A 4, 334 (1986)]

Richard W. Hyland, Charles D. Ehrlich, Charles R. Tilford, and Steve Thornberg

J. Vac. Sci. Technol. A 5, 121 (1987); http://dx.doi.org/10.1116/1.574122 (1 page)

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Abstract Unavailable
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07.30.Hd Vacuum testing methods; leak detectors
99.10.Cd Errata

Summary Abstract: Present status of the leak standards program at the National Bureau of Standards

Charles Ehrlich

J. Vac. Sci. Technol. A 5, 125 (1987); http://dx.doi.org/10.1116/1.574123 (2 pages)

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Abstract Unavailable
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07.30.Hd Vacuum testing methods; leak detectors
06.20.F- Units and standards

Summary Abstract: A new technique for calibration of very small leaks

James A. Basford

J. Vac. Sci. Technol. A 5, 127 (1987); http://dx.doi.org/10.1116/1.574124 (2 pages)

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Abstract Unavailable
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07.30.Hd Vacuum testing methods; leak detectors

Gas dynamics in residual gas analyzer calibration

Donald J. Santeler

J. Vac. Sci. Technol. A 5, 129 (1987); http://dx.doi.org/10.1116/1.574125 (5 pages) | Cited 2 times

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Residual gas analyzers are used for measuring partial flow rates as well as for measuring partial pressures. The required calibration may also be obtained with either known flow rates or known pressures. The calibration and application procedures are straightforward when both are of the same type; however, substantial errors may occur if the two types are mixed. This report develops the basic equations required to convert between partial pressure calibrations and partial flow rate calibrations. It also discusses the question of fractionating and nonfractionating gas flow in various gas inlet and pumping systems.
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07.30.Bx Degasification, residual gas
47.45.-n Rarefied gas dynamics
47.80.-v Instrumentation and measurement methods in fluid dynamics

Calibration of mass spectrometers for quantitative gas mixture analysis

Robert E. Ellefson, David Cain, and Charles N. Lindsay

J. Vac. Sci. Technol. A 5, 134 (1987); http://dx.doi.org/10.1116/1.574126 (6 pages) | Cited 1 time

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Quantitative analysis of gas mixtures from sources external to a mass spectrometer (MS) requires vacuum hardware that systematically introduces the gas to the ionization region of the MS and calibration procedures that reflect the MS response to time dependent partial pressures in the gas source. Formalism for describing the gas flow, fractionation processes, and the ionization process is presented. Long‐term sensitivity data for D2 is presented for three types of mass spectrometers: a quadrupole, a cycloid, and a magnetic sector mass spectrometer. The use of appropriate standard gas mixtures to monitor the accuracy of the MS calibration by control chart is advocated. Bias data from control charts can be used as the basis for minor calibration adjustments rather than total recalibration.
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82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
07.75.+h Mass spectrometers

Summary Abstract: Quadrupole versus magnetic sector residual gas analyzers in research

David Lichtman

J. Vac. Sci. Technol. A 5, 140 (1987); http://dx.doi.org/10.1116/1.574127 (2 pages)

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Abstract Unavailable
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07.55.-w Magnetic instruments and components
07.75.+h Mass spectrometers
07.30.Kf Vacuum chambers, auxiliary apparatus, and materials
07.30.Bx Degasification, residual gas

Summary Abstract: Calibration of dynamic small‐sample analysis systems

James E. Fenstermacher

J. Vac. Sci. Technol. A 5, 142 (1987); http://dx.doi.org/10.1116/1.574128 (1 page)

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Abstract Unavailable
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82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
82.80.Bg Chromatography

Pulsed gas injection for on‐line calibration of residual gas analyzers

B. R. F. Kendall

J. Vac. Sci. Technol. A 5, 143 (1987); http://dx.doi.org/10.1116/1.574129 (6 pages) | Cited 3 times

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Pulsed gas injection valves have been developed which deliver highly repeatable single bursts of gas in the 10−7–1 Torr l range. Although originally intended for studying dynamic vacuum phenomena, these valves appear to have interesting possibilities for on‐line checking of residual gas analyzer calibration. The work chamber is pumped continuously during calibration. The almost instantaneous and predictable pressure increase in a chamber of known volume allows direct sensitivity measurements to be made provided the analyzer has a sufficiently fast response. Experimental results showing reproducibility and pressure waveforms for a manually triggered valve are summarized. An outline is given of a calibration procedure using pulses of noble gases of differing molecular weights. Preliminary results obtained with a simple electromagnetic valve capable of up to 100 pulses s−1 are also discussed.
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07.30.Bx Degasification, residual gas
07.30.Kf Vacuum chambers, auxiliary apparatus, and materials
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