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Nov 1988

Volume 6, Issue 6, pp. 3049-3169


Deposition and redeposition in magnetrons

S. M. Rossnagel

J. Vac. Sci. Technol. A 6, 3049 (1988); http://dx.doi.org/10.1116/1.575473 (6 pages) | Cited 7 times

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The deposition probability and spatial distribution of atoms sputtered from a magnetron cathode have been semiquantitatively measured for a variety of chamber pressures for Cu and Al cathodes in Ne, Ar, and Kr gases. In this experiment, a large substrate plane was mounted parallel to a planar cathode. The cathode‐to‐sample distance was varied from 5 to 14.5 cm. Deposited films were measured on the sample plane, the area to the side of the cathode, and areas on the cathode itself. Deposition probabilities were calculated by comparison to the starting number of atoms. The deposition probability increased with decreasing pressure, throw distance, gas mass, and increasing cathode atom mass or discharge power. The redistribution back onto the cathode correlated inversely roughly with the deposition onto the sample plane. In the worst cases, sputtered atoms were more likely to redeposit onto the cathode surface than deposit on the sample plane. A clear trend was observed correlating gas scattering effects with local changes in the gas density due to thermalization effects in the background gas.
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81.15.Cd Deposition by sputtering
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

A new method for the simultaneous condensation of complete ternary alloy systems under ultrahigh vacuum conditions

A. Mehrtens, M. Moske, and K. Samwer

J. Vac. Sci. Technol. A 6, 3055 (1988); http://dx.doi.org/10.1116/1.575474 (7 pages) | Cited 1 time

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An ultrahigh vacuum apparatus is described for the simultaneous condensation of complete ternary alloy systems. Three singly controlled electron beam evaporation sources provide a constant evaporation rate of the different elements. A specially designed rotating mask guarantees a concentration gradient on the substrate according to a ternary phase diagram. The conversion of the actual concentration profile into a standard ternary phase diagram is done by simple computer calculations. They involve corrections for the beam characteristics of the evaporation sources and for the rotating mask. As an example, measurements for the Zr–Cu–Co system are given. The concentration range for the amorphous phase is compared with thermodynamic predictions using Miedema’s parameter.
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81.05.Bx Metals, semimetals, and alloys
81.30.Bx Phase diagrams of metals, alloys, and oxides

Magnetic anisotropy of direct‐current magnetron sputtered CoCr films

Z.‐M. Li and R. R. Parsons

J. Vac. Sci. Technol. A 6, 3062 (1988); http://dx.doi.org/10.1116/1.575475 (6 pages)

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The magnetic anisotropy constant of dc magnetron sputtered CoCr films are investigated as a function of the sputtering power and the target‐to‐substrate distance. The results can be interpreted in terms of the dependence of adatom diffusion on the supttering parameters. The orientation of the easy (hard) axis of the uniaxial magnetic anisotropy is found to be tilted away from the film normal and varies with the orientation of the substrate with respect to the target.
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75.30.Gw Magnetic anisotropy
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Cc Other ferromagnetic metals and alloys
81.15.Cd Deposition by sputtering

The effect of surface roughness and nonuniform metal thickness on the etching of sputter‐deposited copper and chromium

S. N. Ganguli and D. Berk

J. Vac. Sci. Technol. A 6, 3068 (1988); http://dx.doi.org/10.1116/1.575476 (6 pages)

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Variations in metal thickness and surface roughness of sputter‐deposited Cr/Cu/Cr metals on aluminum ceramics and glass slides were measured. The copper layer, which has a thickness of 75 kÅ, shows the most uniform surface, while the base chrome layer with an average thickness of 750 Å shows the least. Etch rates were determined as a function of surface roughness for chromium using a KMnO4 /NaOH etchant and for copper using a FeCl3 etchant. The results for both metals show that the rate increases 2–3 times when the surface roughness is increased.
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81.05.Bx Metals, semimetals, and alloys
68.35.Gy Mechanical properties; surface strains
68.55.-a Thin film structure and morphology

Microstructure of sputtered metal films grown in high‐ and low‐pressure discharges

E. Kay, F. Parmigiani, and W. Parrish

J. Vac. Sci. Technol. A 6, 3074 (1988); http://dx.doi.org/10.1116/1.575477 (8 pages) | Cited 12 times

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Sputtered metal films grown in different discharge environments are subject to different degrees of energetic particle bombardment during film growth, resulting in different microstructure and subsequent thin‐film properties. The effect on film structure of energetic gas neutrals, backscattered from the sputtering target, together with the role of sputtered neutral metal atoms and those Penning ionized in traversing the plasma, are evaluated in different pressure regimes and under different biasing conditions. It will be shown that the film morphology, degree of texturing, and anisotropic lattice distortions change in a systematic way depending on En, the energy delivered to the growing metal film surface per arriving metal atom. En changes predictably in different discharge pressure regimes as do the resultant film structures and properties.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
61.80.Jh Ion radiation effects
68.35.B- Structure of clean surfaces (and surface reconstruction)

Ellipsometric studies of sputtered Au–TiNx thin films

R. Luthier and F. Lévy

J. Vac. Sci. Technol. A 6, 3082 (1988); http://dx.doi.org/10.1116/1.575478 (6 pages)

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Sputtered Au–TiNx thin films were deposited from two composite powder targets of Au and TiN with 4.4 and 8.5 mol % TiN, respectively. The composition of the sputtering atmosphere Ar–N2 was varied with the N2 partial pressure ranging from 0 to 2×10−1 Pa. The influence of the reactive gas on the optical properties of the sputtered films has been investigated by means of differential reflectivity measurements and polarization modulation ellipsometry, in the photon energy range 1.5–5 eV. The observed properties are qualitatively interpreted on the basis of a composite microstructure: a dilute Au:Ti alloy acts as the host phase containing a small fraction of segregated TiNx grains, of typical dimension lower than 2.5 nm. The concentration of the matrix alloy (Au:Ti) was deduced from the measured dielectric function on the basis of the virtual‐bound‐state model, which applies to transition‐metal impurities in noble‐metal hosts. The influence of the dispersed refractory phase has then been examined within a scheme of mean‐field theory.
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78.66.-w Optical properties of specific thin films
81.15.Cd Deposition by sputtering
81.40.Tv Optical and dielectric properties related to treatment conditions
77.55.-g Dielectric thin films

High‐rate reactive sputter deposition of zirconium dioxide

Fletcher Jones

J. Vac. Sci. Technol. A 6, 3088 (1988); http://dx.doi.org/10.1116/1.575479 (10 pages) | Cited 12 times

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Using an improved reactive sputter deposition technique, zirconium dioxide is deposited on cooled and uncooled substrates at low, medium, and high rates of 51.7, 95.4, and 152.4 nm/min, respectively. The films are deposited by sputtering a Zr target in an oxygen–argon plasma. The Zr target remains in the metallic state. The films are characterized by measuring the stoichiometry, refractive index, optical transmission, stress, and crystallinity as a function of deposition rate. Films deposited on (100) N‐type silicon substrates were annealed at temperatures ranging from 200 to 500 °C in steps of 50 °C. X‐ray diffraction patterns show that the ‘‘as‐deposited’’ films contain polycrystalline and amorphous phases of various amounts depending on the deposition rate and substrate temperature. Amorphous components crystallize into the cubic phase as the annealing temperature increases. At deposition rates of 95.4 and 152.4 nm/min, the refractive index and optical transmission (at 820 nm) of the unannealed, as‐deposited films are not affected by the quantity of material in the amorphous state and are also independent of substrate temperature.
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81.15.Cd Deposition by sputtering
78.66.-w Optical properties of specific thin films
68.55.Nq Composition and phase identification
68.55.-a Thin film structure and morphology

Deposition and properties of zinc cadmium telluride films

Michael G. Peters, Alan L. Fahrenbruch, and Richard H. Bube

J. Vac. Sci. Technol. A 6, 3098 (1988); http://dx.doi.org/10.1116/1.575480 (5 pages) | Cited 4 times

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Zinc cadmium telluride solid solution films with zinc/cadmium ratios as high as 40% have been deposited onto graphite substrates by the close‐spaced vapor transport method, using sources consisting of polycrystalline zinc cadmium telluride or mixtures of cadmium telluride and zinc telluride powders. High zinc concentrations in the films have been obtained by using small temperature differences for atmospheric pressure depositions, and by depositions under low pressures (0.3 Torr) for larger temperature differences. Hole densities of 5×1015 cm−3 were obtained with no intentional doping and with no dependence on the zinc concentration. Heterojunctions with cadmium sulfide were prepared to explore the junction properties of these films.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ga II-VI semiconductors

The effect of heavy‐ion bombardment on the properties of hard a‐C:H (i‐C) films

J. W. Zou, K. Schmidt, K. Reichelt, and B. Stritzker

J. Vac. Sci. Technol. A 6, 3103 (1988); http://dx.doi.org/10.1116/1.575481 (2 pages) | Cited 12 times

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a‐C:H films with high hardness (>3500 kp/mm2 ) and high internal stress have been bombarded with 4‐MeV Ni+ ions at several doses. Hardness, internal stress, and hydrogen content were measured as a function of Ni+ dose. It was found that at doses between 3×1012 and 3×1013 ions/cm2 the hardness decreases. At doses below 1013 ions/cm2 the internal stress increases above its original value. Hydrogen concentration and internal stress decrease in the ion range between 3×1013 and 1015 ions/cm2. For large doses the three properties reach a constant value.
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61.80.Jh Ion radiation effects
68.60.Bs Mechanical and acoustical properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Salt smoke: The formation of submicron sized RbCl particles by thermal evaporation in 0.5–100 Torr of argon and helium

J. K. G. Panitz, D. M. Mattox, and M. J. Carr

J. Vac. Sci. Technol. A 6, 3105 (1988); http://dx.doi.org/10.1116/1.575482 (6 pages)

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We have shown that it is possible to form submicron‐sized particles of a highly ionic compound RbCl by thermally evaporating the reagent salt in 0.5–100 Torr of inert gas. By collecting the particles on a surface and then carefully removing them, bulk powder can be collected. The ambient gas species, pressure, system geometry, and evaporation temperature profile affect the size and geometry of the particles which form. Evidence indicates that if strong convection currents are present during evaporation, the number of individual primary particles in the powder is increased and the number of sintered strings of primary particles is reduced. The primary particle size depends on the geometry of the evaporation source used and is independent of the ambient pressure. In argon, the size of the particles collected is independent of the distance between the collection plates and the source. In helium, the size of the primary particles collected from a single run can vary from ∼10 to 1000 nm; the particle size collected is strongly dependent on the distance of the collection plates from the evaporation source.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

A method of determining hydrogen in aluminum by removing surface gases with ion beam etching

Y. Kato, T. Kitamura, E. Isoyama, M. Hasegawa, T. Momose, and H. Ishimaru

J. Vac. Sci. Technol. A 6, 3111 (1988); http://dx.doi.org/10.1116/1.575483 (4 pages)

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A method of determining gases after ion beam etching on aluminum surface has been tried to improve the present lower limit of determining hydrogen in aluminum. The present lower limit of determining internal hydrogen is 0.05 cm3/100 g Al STP. To improve the present lower limit, it is necessary to remove surface gases on aluminum. Carbon compounds and oxide film on aluminum were removed by neon ion beam etching on the dose of 2.8×1017 ions/cm2 or more. On the etched surface, no carbon and oxygen were observed using Auger electron spectroscopy. Determined hydrogen was 0.0055 cm3/100 g Al, about one‐tenth of the lower limit by the traditional method.
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68.35.Dv Composition, segregation; defects and impurities
81.05.Bx Metals, semimetals, and alloys
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Determination of the valence electronic structure of condensed trimethylaluminum by photoelectron spectroscopy and molecular‐orbital calculations

T. Motooka, A. Rockett, P. Fons, J. E. Greene, W. R. Salaneck, R. Bergman, and J.‐E. Sundgren

J. Vac. Sci. Technol. A 6, 3115 (1988); http://dx.doi.org/10.1116/1.575484 (5 pages) | Cited 4 times

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The electronic structure of dimerized trimethylaluminum (TMA), Al2(CH3)6, condensed at low temperatures on clean substrates in ultrahigh vacuum, has been investigated using ultraviolet and x‐ray photoelectron spectroscopies together with molecular‐orbital (MO) calculations carried out using the self‐consistent‐field Xα‐scattered‐wave method. Valence‐band spectra revealed three broad peaks centered at ∼15.0, 7.5, and 4.5 eV below the Fermi level. The peaks were assigned, based upon computed MO results, to correspond primarily to C(2s)+H(1s), C(2p)+H(1s), and Al(3p)+C(2p) bonding orbitals, respectively, in dimerized TMA. The wave functions of the upper MO levels corresponding to the 4.5‐eV peak were predominantly composed of Al(3p) orbitals.
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71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
81.65.-b Surface treatments

Chemical shifts of silicon and titanium in titanium silicide studied by Auger electron spectroscopy, slow electron energy‐loss spectroscopy, and internal x‐ray photoelectron spectroscopy

J. K. N. Sharma, B. R. Chakraborty, and S. M. Shivaprasad

J. Vac. Sci. Technol. A 6, 3120 (1988); http://dx.doi.org/10.1116/1.575485 (5 pages) | Cited 4 times

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This paper describes the study of Auger and core‐level energy shifts measured for pure Si, Ti, and TiSi2 by Auger electron spectroscopy (AES), slow electron energy‐loss spectroscopy (SEELS), and internal x‐ray photoelectron spectroscopy (IXPS). The Auger line‐shape changes in TiSi2 are noted and the chemical shifts measured. The deep‐core‐level loss energies of the silicon K‐ and L‐shell electron and the titanium L‐ and M‐shell electrons are determined using SEELS technique. The collective surface and bulk plasma excitations in Ti, Si, and TiSi2 are also observed. Using a high‐energy beam Si(Kα) x rays are generated to produce titanium photoelectrons by the IXPS L‐shell electrons in TiSi2. The core level shifts observed from AES, SEELS, and IXPS are compared and this confirms the already established metallic nature of the silicide.
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79.20.Fv Electron impact: Auger emission
71.55.-i Impurity and defect levels
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Distribution of intermediate oxidation states at the silicon/silicon dioxide interface obtained by low‐energy ion implantation

O. Benkherourou and J. P. Deville

J. Vac. Sci. Technol. A 6, 3125 (1988); http://dx.doi.org/10.1116/1.575486 (5 pages) | Cited 2 times

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This work has been undertaken to understand the morphology of Si/SiO2 interfaces obtained by low‐energy ion implantation. The crystallinity of the interface is determined by the observation of tetrahedral configurations [Si–(Si4−x–Ox) with x=0, 1,...,4] of silicon atoms bound to oxygen and/or silicon. The distribution over the whole interface also has been considered and the amorphous dioxide has been characterized by its interfacial depth and compared with the theoretical models such as the random bonding model or the random mixture model.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
61.80.Jh Ion radiation effects

Quantitative determination of atomic concentrations by Auger electron spectroscopy

Y. Goldstein, A. Many, O. Millo, S. Z. Weisz, and O. Resto

J. Vac. Sci. Technol. A 6, 3130 (1988); http://dx.doi.org/10.1116/1.575487 (4 pages) | Cited 2 times

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A simple mathematical analysis presented here shows that unless the ratio of the instrumental resolution width to the natural linewidth of each Auger line is less than about 0.3, the measured peak‐to‐peak amplitudes of the differentiated Auger signals do not represent accurately the atomic concentrations. At the same time, the analysis provides the means for overcoming this difficulty even when the linewidth ratio is considerably larger than 0.3. A universal relation is presented whereby the experimentally measured peak‐to‐peak amplitudes can be corrected so as to enable one to derive quite accurately the relative atomic concentrations in one’s samples; so much so, provided reliable Auger sensitivities of the elements are available. Unfortunately, however, most of the sensitivity data, especially for the high‐energy Auger lines, were measured with insufficient resolution. In fact, we show that at least in some cases the published data were measured with a resolution far from satisfactory. It is our contention, therefore, that there is a need for a revision of the sensitivity data with the required resolution if they are to be used for quantification.
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82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Pthalimide on copper: A model system to address certain site‐specific interactions at the polyimide–copper interface

W. R. Salaneck, S. Stafström, J.‐L. Brédas, S. Andersson, P. Bodö, S. P. Kowalczyk, and J. J. Ritsko

J. Vac. Sci. Technol. A 6, 3134 (1988); http://dx.doi.org/10.1116/1.575488 (6 pages) | Cited 1 time

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As a model molecule for a specific part of a polyimide, pthalimide has been studied adsorbed upon copper substrates at low temperatures using angle‐dependent x‐ray photoelectron spectroscopy. A stable adsorbate is found to exist in the approximate range −30 °C≤T≤−5 °C. The pthalimide molecule lies approximately flat upon the polycrystalline copper surface. Charge transfer from the copper to the adsorbate is observed. The present results are in contrast with those obtained when copper is vapor deposited upon a polyimide, as reported in the literature.
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68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
85.40.Hp Lithography, masks and pattern transfer

Photodesorption from stainless steels

A. Mesarwi and A. Ignatiev

J. Vac. Sci. Technol. A 6, 3140 (1988); http://dx.doi.org/10.1116/1.575489 (4 pages) | Cited 1 time

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The photodesorption by low‐energy photons (hν≤6 eV) from three types of stainless steels is examined. For all these systems both CO and CO2 were observed to photodesorb with high yields: ≊10−3 molecules/photon for CO2 and ≊10−4 molecules/photon for CO at λ=250 nm. The observed threshold energies were found to be the same for all systems at E0 =2.92 eV for CO2 and E0=2.92–3.10 eV for CO.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Fabrication of a cryogenic foam target for inertial confinement fusion experiments

T. Norimatsu, H. Katayama, T. Mano, M. Takagi, R. Kodama, K. A. Tanaka, Y. Kato, T. Yamanaka, S. Nakai, Y. Nishino, M. Nakai, and C. Yamanaka

J. Vac. Sci. Technol. A 6, 3144 (1988); http://dx.doi.org/10.1116/1.575490 (4 pages) | Cited 8 times

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The first successful fabrication of a cryogenic foam target is reported. Detailed techniques to ensure accurate fuel loading in the foam shell are described. This target has been used for implosion experiments with the Gekko XII glass laser.
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07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
28.52.-s Fusion reactors
52.58.-c Other confinement methods

Use of successive expansion technique to determine volume ratios of ≊5000 for vacuum gauge calibration

J. K. N. Sharma and Pardeep Mohan

J. Vac. Sci. Technol. A 6, 3148 (1988); http://dx.doi.org/10.1116/1.575051 (6 pages) | Cited 2 times

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The method of successive expansion first used by Elliott and Clapham [National Physical Laboratory (U.K.) Report No. MOM28, 1978] for measuring volume ratios of ∼100 has been shown to be feasible for measuring volume ratios of ∼2830 with uncertainties of ±0.15 % while using a capacitance manometer with a lower pressure range for measuring the final pressures. The volume ratios thus determined have enabled the authors to reduce the systematic errors associated with the pressures generated by the series expansion system in their laboratory. Further, an attempt has been made to quantify the error in the measurement of volumes of chambers consisting of one or more metal diaphragm valves. In order to completely eliminate errors on this account an alternative calibration procedure has been outlined. The possibility of extending the measurement to ratios of ≊5000 has also been discussed.
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07.30.Dz Vacuum gauges

Densification‐induced infrared and Raman spectra variations of amorphous SiO2

R. A. B. Devine

J. Vac. Sci. Technol. A 6, 3154 (1988); http://dx.doi.org/10.1116/1.575047 (3 pages) | Cited 14 times

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Abstract Unavailable
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78.35.+c Brillouin and Rayleigh scattering; other light scattering

Magnetic field designs for cylindrical‐post magnetron discharge sources

G. Y. Yeom, John A. Thornton, and Alan S. Penfold

J. Vac. Sci. Technol. A 6, 3156 (1988); http://dx.doi.org/10.1116/1.575048 (3 pages) | Cited 6 times

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Abstract Unavailable
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
52.80.-s Electric discharges

Post cathode magnetron sputter deposition inside a long, small‐diameter closed‐end tube

C. R. Peeples, R. E. Cuthrell, and D. M. Mattox

J. Vac. Sci. Technol. A 6, 3159 (1988); http://dx.doi.org/10.1116/1.575049 (2 pages)

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We have demonstrated the possibility of depositing thick molybdenum films closed−end insulating tube using the post cathode magnetron sputter deposi tion configuration using a high sputtering gas pressure an a means for rem oving the surface charge buildup. (AIP)
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81.15.Cd Deposition by sputtering
84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)

Morphology and microstructure of magnetron sputtering ion‐plating Al films as a function of deposition time

L. J. Wan, B. Q. Chen, and K. H. Kuo

J. Vac. Sci. Technol. A 6, 3160 (1988); http://dx.doi.org/10.1116/1.575052 (4 pages)

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Abstract Unavailable
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81.15.Cd Deposition by sputtering
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.55.-a Thin film structure and morphology

A modified diode method for measuring work function change

G. Haase, Z. Rozenzweig, and M. Asscher

J. Vac. Sci. Technol. A 6, 3163 (1988); http://dx.doi.org/10.1116/1.575050 (2 pages)

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Abstract Unavailable
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73.30.+y Surface double layers, Schottky barriers, and work functions

Thermocouple mounting on semiconductor samples

D. S. Blair and G. L. Fowler

J. Vac. Sci. Technol. A 6, 3164 (1988); http://dx.doi.org/10.1116/1.575053 (3 pages)

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We have designed an alternate method of attaching a thermocouple to a semiconductor which is both simple and reliable. It consists of a tungsten base alloy thermocouple threaded through a hole in the sample and held in place by a tantalum strap. (AIP)
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06.60.Vz Workshop procedures (welding, machining, lubrication, bearings, etc.)
07.20.Dt Thermometers

Surface temperature determination in surface analytic systems by infrared optical pyrometry

Donald R. Wheeler, William R. Jones, and Stephen V. Pepper

J. Vac. Sci. Technol. A 6, 3166 (1988); http://dx.doi.org/10.1116/1.575054 (3 pages) | Cited 1 time

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Abstract Unavailable
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07.20.Ka High-temperature instrumentation; pyrometers
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

An easily constructed, inexpensive cold stage for use in ultrahigh vacuum

G. Nelson, T. Ohlhausen, E. Hardegree, and P. Schulze

J. Vac. Sci. Technol. A 6, 3168 (1988); http://dx.doi.org/10.1116/1.575055 (2 pages) | Cited 2 times

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A liquid‐nitrogen‐cooled sample holder for use in ultrahigh vacuum systems is described. The holder is well suited for either resistive or electron‐beam heating, and requires less coolant than some other designs. The holder can be constructed from commercially available parts for about $350, using commonly available tools.
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06.60.Ei Sample preparation (including design of sample holders)
07.30.Kf Vacuum chambers, auxiliary apparatus, and materials
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