• Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

You are not logged in You are not logged in to this journal. Log In

J. Vac. Sci. Technol. A 7, 883 (1989); http://dx.doi.org/10.1116/1.575815 (11 pages)

Electron cyclotron resonance microwave discharges for etching and thin‐film deposition

Jes Asmussen

Department of Electrical Engineering, Michigan State University, East Lansing, Michigan 48824

A recent, important development in low‐pressure and low‐temperature plasma processing is the microwave electron cyclotron resonance (ECR) discharge. Its lack of electrodes and its ability to create high densities of charged and excited species at low pressures (≲104 Torr) make it an attractive processing discharge in etching and thin‐film deposition applications. This article reviews the basic physics of ECR discharges and reviews the associated microwave system and applicator technologies. Waveguide and cavity ECR applicators are compared and are described in detail. Several ECR plasma processing reactors are also described. Methods of processing large surfaces are outlined, and typical experimentally measured ECR discharge characteristics are presented.

KEYWORDS and PACS

PACS

  • 52.80.Pi

    High-frequency and RF discharges

  • 52.50.-b

    Plasma production and heating

PUBLICATION DATA

ISSN

0734-2101 (print)  

For access to citing articles, you need to log in.


Close

close