Jump to Content
View Cart
Top 20 Most Read Articles
April 2011
The 20 articles with the most full-text downloads during the month, in descending order.
 |
Photovoltaic manufacturing: Present status, future prospects, and research needs J. Vac. Sci. Technol. A 29, 030801 (2011); http://dx.doi.org/10.1116/1.3569757 (16 pages) Online Publication Date: 29 March 2011
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
In May 2010 the United States National Science Foundation sponsored a two-day workshop to review the state-of-the-art and research challenges in photovoltaic (PV) manufacturing. This article summarizes the major conclusions and outcomes from this workshop, which was focused on identifying the science that needs to be done to help accelerate PV manufacturing. A significant portion of the article focuses on assessing the current status of and future opportunities in the major PV manufacturing technologies. These are solar cells based on crystalline silicon (c-Si), thin films of cadmium telluride (CdTe), thin films of copper indium gallium diselenide, and thin films of hydrogenated amorphous and nanocrystalline silicon. Current trends indicate that the cost per watt of c-Si and CdTe solar cells are being reduced to levels beyond the constraints commonly associated with these technologies. With a focus on TW/yr production capacity, the issue of material availability is discussed along with the emerging technologies of dye-sensitized solar cells and organic photovoltaics that are potentially less constrained by elemental abundance. Lastly, recommendations are made for research investment, with an emphasis on those areas that are expected to have cross-cutting impact.
|
|||
|
Show PACS
|
|||
|
|
Status and potential of atmospheric plasma processing of materials J. Vac. Sci. Technol. A 29, 020801 (2011); http://dx.doi.org/10.1116/1.3559547 (17 pages) Online Publication Date: 4 March 2011
Full Text:
Read Online (HTML)
|
Download PDF
|
|||||||||||||
|
Show Abstract
This paper is a review of the current status and potential of atmospheric plasma technology for materials processing. The main focus is the recent developments in the area of dielectric barrier discharges with emphasis in the functionalization of polymers, deposition of organic and inorganic coatings, and plasma processing of biomaterials. A brief overview of both the equipment being used and the physicochemical reactions occurring in the gas phase is also presented. Atmospheric plasma technology offers major industrial, economic, and environmental advantages over other conventional processing methods. At the same time there is also tremendous potential for future research and applications involving both the industrial and academic world.
|
||||||||||||||
|
Show PACS
|
||||||||||||||
|
|
Comparison of the sputter rates of oxide films relative to the sputter rate of SiO2 J. Vac. Sci. Technol. A 28, 1060 (2010); http://dx.doi.org/10.1116/1.3456123 (13 pages) Online Publication Date: 2 September 2010
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
There is a growing interest in knowing the sputter rates for a wide variety of oxides because of their increasing technological importance in many different applications. To support the needs of users of the Environmental Molecular Sciences Laboratory, a national scientific user facility, as well as our research programs, the authors made a series of measurements of the sputter rates from oxide films that have been grown by oxygen plasma-assisted molecular beam epitaxy, pulsed laser deposition, atomic layer deposition, electrochemical oxidation, or sputter deposition. The sputter rates for these oxide films were determined in comparison with those from thermally grown SiO2, a common reference material for sputter rate determination. The film thicknesses and densities for most of these oxide films were measured using x-ray reflectivity. These oxide films were mounted in an x-ray photoelectron or Auger electron spectrometer for sputter rate measurements using argon ion sputtering. Although the primary objective of this work was to determine relative sputter rates at a fixed angle, the measurements also examined (i) the angle dependence of the relative sputter rates, (ii) the energy dependence of the relative sputter rates, and (iii) the extent of ion beam induced reduction for some oxides. Oxide films examined include SiO2, Al2O3, CeO2, Cr2O3, Fe2O3, HfO2, In–Sn oxide, Ta2O5, TiO2 (anatase, rutile, and amorphous), and ZnO. The authors found that the sputter rates for the oxides can vary up to a factor of 2 (usually lower) from that observed for SiO2. The ratios of sputter rates relative to those of SiO2 appear to be relatively independent of ion beam energy in the range of 1–4 kV and for incident angles <50°. As expected, the extent of ion beam induced reduction of the oxides varies with the sputter angle.
|
|||
|
Show PACS
|
|||
|
|
Critical review: Plasma-surface reactions and the spinning wall method J. Vac. Sci. Technol. A 29, 010801 (2011); http://dx.doi.org/10.1116/1.3517478 (25 pages) Online Publication Date: 3 January 2011
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
This article reviews methods for studying reactions of atoms and small molecules on substrates and chamber walls that are immersed in a plasma, a relatively unexplored, yet very important area of plasma science and technology. Emphasis is placed on the “spinning wall” technique. With this method, a cylindrical section of the wall of the plasma reactor is rotated, and the surface is periodically exposed to the plasma and then to a differentially pumped mass spectrometer, to an Auger electron spectrometer, and, optionally, to a beam of additional reactants or surface coatings. Reactants impinging on the surface can stick and react over time scales that are comparable to the substrate rotation period, which can be varied from ∼ 0.5 to 40 ms. Langmuir–Hinshelwood reaction probabilities can be derived from a measurement of the absolute desorption product yields as a function of the substrate rotation frequency. Auger electron spectroscopy allows the plasma-immersed surface to be monitored during plasma operation. This measurement is critical, since wall “conditioning” in the plasma changes the reaction probabilities. Mass spectrometer cracking patterns are used to identify simple desorption products such as Cl2, O2, ClO, and ClO2. Desorption products also produce a measurable pressure rise in the second differentially pumped chamber that can be used to obtain absolute desorption yields. The surface can also be coated with films that can be deposited by sputtering a target in the plasma or by evaporating material from a Knudsen cell in the differentially pumped wall chamber. Here, the authors review this new spinning wall technique in detail, describing both experimental issues and data analysis methods and interpretations. The authors have used the spinning wall method to study the recombination of Cl and O on plasma-conditioned anodized aluminum and stainless steel surfaces. In oxygen or chlorine plasmas, these surfaces become coated with a layer containing Si, Al, and O, due to slow erosion of the reactor materials, in addition to Cl in chlorine plasmas. Similar, low recombination probabilities were found for Cl and O on anodized Al versus stainless steel surfaces, consistent with the similar chemical composition of the layer that forms on these surfaces after long exposure to the plasma. In chlorine plasmas, weakly adsorbed Cl2 was found to inhibit Cl recombination, hence the Cl recombination probability decreases with increasing Cl2-to-Cl number density ratios in the plasma. In mixed Cl2/O2 plasmas, Cl and O recombine to form Cl2 and O2 with probabilities that are similar to those in pure chlorine or oxygen plasmas, but in addition, ClO and ClO2 form on the surface and desorb from the wall. These and other results, including the catalytic enhancement of O recombination by monolayer amounts of Cu, are reviewed.
|
|||
|
Show PACS
|
|||
|
|
Dry etching of polydimethylsiloxane for microfluidic systems J. Vac. Sci. Technol. A 20, 975 (2002); http://dx.doi.org/10.1116/1.1460896 (8 pages) Online Publication Date: 7 May 2002
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
A fluorine-based reactive ion etch (RIE) process has been developed to anisotropically dry etch the silicone elastomer polydimethylsiloxane (PDMS). This technique complements the standard molding procedure that makes use of forms made of thick SU-8 photoresist to produce features in the PDMS. Total gas pressure and the ratio of O2 to CF4 were varied to optimize etch rate. The RIE recipe developed in this study uses a 1:3 mixture of O2 to CF4 gas resulting in a highly directional and stable etch rate of approximately 20 μm per hour. Selective dry etching can be performed through a photolithographically patterned metal etch mask providing greater precision and alignment with preexisting molded features. The dry etch process is presented in this article along with a brief comparison to recently reported wet etch approaches. © 2002 American Vacuum Society. |
|||
|
Show PACS
|
|||
|
|
J. Vac. Sci. Technol. A 29, 030601 (2011); http://dx.doi.org/10.1116/1.3562167 (5 pages) Online Publication Date: 11 March 2011
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Abstract Unavailable
|
|||
|
Show PACS
|
|||
|
|
Defects in m-plane ZnO epitaxial films grown on (112) LaAlO3 substrate J. Vac. Sci. Technol. A 29, 031001 (2011); http://dx.doi.org/10.1116/1.3539046 (5 pages) Online Publication Date: 31 January 2011
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
The crystallographic orientations of m-plane ZnO on (112) LaAlO3 (LAO) substrate are [
 20]ZnO∥[11]LAO and [0001]ZnO∥[10]LAO. The defects in m-plane ZnO have been systematically investigated using cross section and plan-view transmission electron microscopy (TEM). High-resolution TEM observations in cross section show misfit dislocations and basal stacking faults (BSFs) at the ZnO/LAO interface. In the films, threading dislocations (TDs) with 1/3〈11 0〉 Burgers vectors are distributed on the basal plane, and BSFs have 1/6〈203〉 displacement vector. The densities of dislocations and BSFs are estimated to be 5.1×1010 cm−2 and 4.3×105 cm−1, respectively. In addition to TDs and BSFs, plan-view TEM examination also reveals that stacking mismatch boundaries mainly lie along the m-planes and they connect with planar defect segments along the r-planes. |
|||
|
Show PACS
|
|||
|
|
Work function of fluorine doped tin oxide J. Vac. Sci. Technol. A 29, 011019 (2011); http://dx.doi.org/10.1116/1.3525641 (4 pages) Online Publication Date: 5 January 2011
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Fluorine doped tin oxide (FTO) is a commonly used transparent conducting oxide in optoelectronic device applications. The work function of FTO is commonly cited as 4.4 eV, which is incommensurate with recent device performance results. Using x-ray photoelectron spectroscopy, the authors measured the work function of commercial FTO to be 5.0±0.1 eV. UV ozone treatment was found to increase the work function by ∼ 0.1 eV due to surface band bending. The origins of the much lower work function previously reported are also discussed and are found to be a result of carbon contamination and UV induced work function lowering.
|
|||
|
Show PACS
|
|||
|
|
Nanosphere lithography: A materials general fabrication process for periodic particle array surfaces J. Vac. Sci. Technol. A 13, 1553 (1995); http://dx.doi.org/10.1116/1.579726 (6 pages)
Full Text:
|
Download PDF
|
||
|
Show Abstract
In this article nanosphere lithography (NSL) is demonstrated to be a materials general fabrication process for the production of periodic particle array (PPA) surfaces having nanometer scale features. A variety of PPA surfaces have been prepared using identical single‐layer (SL) and double‐layer (DL) NSL masks made by self‐assembly of polymer nanospheres with diameter, D=264 nm, and varying both the substrate material S and the particle material M. In the examples shown here, S was an insulator, semiconductor, or metal and M was a metal, inorganic ionic insulator, or an organic π‐electron semiconductor. PPA structural characterization and determination of nanoparticle metrics was accomplished with atomic force microscopy. This is the first demonstration of nanometer scale PPA surfaces formed from molecular materials. © 1995 American Vacuum Society |
|||
|
Show PACS
|
|||
|
|
Transparent conductive Al-doped ZnO thin films grown at room temperature J. Vac. Sci. Technol. A 29, 031505 (2011); http://dx.doi.org/10.1116/1.3565462 (6 pages) Online Publication Date: 16 March 2011
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Aluminum-doped ZnO (ZnO:Al, AZO) thin films were prepared on glass substrates by dc reactive magnetron sputtering from a Zn–Al alloy target at room temperature. The effects of the Ar-to-O2 partial pressure ratios on the structural, electrical, and optical properties of AZO films were studied in detail. AZO films grown using 100:4 to 100:8 Ar-to-O2 ratio result in acceptable quality films with c-axis orientated crystals, uniform grains, 10−3 Ω cm resistivity, greater than 1020 cm−3 electron concentration, and high transmittance, 90%, in the visible region. The lowest resistivity of 4.11×10−3 Ω cm was obtained under the Ar-to-O2 partial pressure ratio of 100:4. A relatively strong UV emission at ∼ 3.26 eV was observed in the room-temperature photoluminescence spectrum. X-ray photoelectron spectroscopy analysis confirmed that Al was introduced into ZnO and substitutes for Zn and doped the film n-type.
|
|||
|
Show PACS
|
|||
|
|
High rate deep Si etching for through-silicon via applications J. Vac. Sci. Technol. A 29, 021009 (2011); http://dx.doi.org/10.1116/1.3543635 (6 pages) Online Publication Date: 28 January 2011
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
High rate deep Si etching for through-silicon via (TSV) applications is reported. The requirements for the Si etch process is discussed from the viewpoint of TSV size and productivity, and the effective processes are described. For “small” TSV a few microns in diameter and up to 10 μm deep, profile control is the most important requirement, For “large” TSV with diameters of more than 50 μm and depths up to 100 μm and more, an ultrahigh Si etch rate is indispensable. The “medium” TSV with diameters and depths several tens of microns requires both high etch rate and profile control. Capacitively coupled plasma MERIE at high pressure is shown to be effective, by using HBr gas chemistry for small TSV, and by using SF6 gas chemistry and high rf frequency for large and medium TSV where an extremely high etch rate can be obtained.
|
|||
|
Show PACS
|
|||
|
|
Work function determination of zinc oxide films J. Vac. Sci. Technol. A 15, 428 (1997); http://dx.doi.org/10.1116/1.580502 (3 pages)
Full Text:
|
Download PDF
|
||
|
Show Abstract
Zinc oxide-silicon heterojunctions were fabricated using both n- and p-type silicon. The zinc oxide films were deposited by the magnetron sputtering process at various substrate temperatures to form these devices. The electrical properties of these devices were measured and the work function of the zinc oxide was evaluated from these properties. © 1997 American Vacuum Society. |
|||
|
Show PACS
|
|||
|
|
J. Vac. Sci. Technol. A 18, 2646 (2000); http://dx.doi.org/10.1116/1.1290371 (15 pages)
Full Text:
|
Download PDF
|
|||||||||||||||||||||||||||
|
Show Abstract
The bulk of developmental work on transparent conducting oxides (TCOs) has been somewhat empirical. This statement applies both to more familiar materials such as indium tin oxide (ITO) and to less-well-known materials that have emerged in recent years. In this article, we place a greater emphasis on more fundamental research. Our eventual goal is to gain a thorough understanding of these materials, their potential for further improvement, whether or not they suggest new and potentially superior materials, and the way their properties are influenced by structural and other issues. We also hope to provide guidelines to other researchers working in this area. We have investigated films of cadmium oxide (CdO), cadmium stannate (Cd2SnO4 or CTO), and zinc stannate [Zn2SnO4 (ZTO)]. The CdO was prepared by chemical-vapor deposition, whereas the stannates were prepared by rf sputtering. In both cases, Corning 7059 glass substrates were used. However, some depositions were also made onto tin oxide, which had a profound effect on the nucleation of CdO, in particular. It is well known that a high free-carrier mobility is essential for a TCO with near-ideal electro-optical properties. Increasing the free-carrier concentration also increases the free-carrier absorbance but a higher mobility reduces it. We have achieved free-electron mobilities in CdO (Eg∼2.4 eV) of greater than 200 cm2 V−1 s−1, of almost 80 cm2 V−1 s−1 in CTO (Eg∼3.1 eV), but of only 10–15 cm2 V−1 s−1 in ZTO (Eg∼3.6 eV). We have characterized these materials, and will show key data, using techniques as diverse as the Nernst–Ettingshausen effect; Mössbauer, Raman, optical, and near-infrared spectroscopies; atomic-force and high-resolution electron microscopy; and x-ray diffraction. These measurements have enabled us to determine the effective mass of the free carriers and their relaxation time, the probable distributions of cations between octahedral and tetrahedral sites, the role of the deposition parameters on the carrier concentrations, and the nature of the dominant scattering mechanisms. We also consider issues relating to toxicity of cadmium and to reserves of indium. Both are of great significance to prospective large-volume manufacturers of TCO films and must be taken into account by researchers. © 2000 American Vacuum Society. |
||||||||||||||||||||||||||||
|
Show PACS
|
||||||||||||||||||||||||||||
|
|
J. Vac. Sci. Technol. A 29, 030602 (2011); http://dx.doi.org/10.1116/1.3570818 (4 pages) Online Publication Date: 28 March 2011
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
The authors compare the effects of vacuum ultraviolet (VUV) irradiation on pristine and UV-cured low-k porous organosilicate glass (SiCOH). The authors find that during VUV irradiation, more trapped charges are generated in UV-cured SiCOH as compared to pristine SiCOH. VUV is also used as a tool to investigate effects of UV curing. From comparison of VUV spectroscopy and photoinjection current of the two samples, the authors find that UV curing reduces the number of defect states in SiCOH. The authors also find that UV-cured SiCOH has higher photoconductivity and intrinsic conductivity from VUV spectroscopy and trapped-charge decay rate, respectively.
|
|||
|
Show PACS
|
|||
|
|
The microstructure of sputter‐deposited coatings J. Vac. Sci. Technol. A 4, 3059 (1986); http://dx.doi.org/10.1116/1.573628 (7 pages)
Full Text:
|
Download PDF
|
||
|
Show Abstract
Microstructure is a critical consideration when polycrystalline or amorphous thin films are used for applications such as microcircuit metallization layers and diffusion barriers. The trend in device fabrication toward lower processing temperatures means that such coatings must often be deposited at substrate temperatures T that are low relative to the coating material melting point Tm. The structure of vapor deposited coatings grown under these conditions consists typically of a columnar growth structure, defined by voided open boundaries, which is superimposed on a microstructure which may be polycrystalline (defined by metallurgical grain boundaries) or amorphous. The voided growth structure is clearly undesirable for most applications. Its occurrence is a fundamental consequence of atomic shadowing acting in concert with the low adatom mobilities that characterize low T/Tm deposition, and its formation can be enhanced by the surface irregularities which are common to microcircuit fabrication. This paper reviews some of the recent developments in understanding the fundamental aspects of the relationship between the deposition conditions and the microstructure of sputter‐deposited thin films, with particular emphasis on the origin of the growth structure and its suppression through energetic particle bombardment. |
|||
|
Show PACS
|
|||
|
|
J. Vac. Sci. Technol. A 29, 031303 (2011); http://dx.doi.org/10.1116/1.3568963 (7 pages) Online Publication Date: 24 March 2011
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
The interactions of the oxidizing plasma with the low k dielectric materials and the associated damage mechanisms are of great technological interest for processing current and next generation low k materials. Density functional theory based ab initio molecular dynamics simulations have been performed to evaluate the reaction mechanisms of thermal atomic oxygen [in triplet (3P) or singlet (1D) state] with the organosilicate low k materials represented by model systems. The threshold kinetic energies of attacking atomic oxygen and the reaction pathway were found to be highly incident angle dependent. Carbon abstraction through methyl radical formation can happen at energy barriers as low as 0.1 eV when O radical attack occurs along the axes inclined to the Si–C bond. The simulation results agree well with recent experiments and support diffusion-controlled etching rate dependence, and dielectric constant increases due to oxygen plasma etching.
|
|||
|
Show PACS
|
|||
|
|
J. Vac. Sci. Technol. A 25, 1317 (2007); http://dx.doi.org/10.1116/1.2764082 (19 pages) Online Publication Date: 30 July 2007
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Physical vapor deposition under conditions of obliquely incident flux and limited adatom diffusion results in a film with a columnar microstructure. These columns will be oriented toward the vapor source and substrate rotation can be used to sculpt the columns into various morphologies. This is the basis for glancing angle deposition (GLAD), a technique for fabricating porous thin films with engineered structures. The origin of the columnar structure characteristic of GLAD films is discussed in terms of nucleation processes and structure zone models. As deposition continues, the columnar structures are influenced by atomic-scale ballistic shadowing and surface diffusion. Competitive growth is observed where the tallest columns grow at the expense of smaller features. The column shape evolves during growth, and power-law scaling behavior is observed as shown in both experimental results and theoretical simulations. Due to the porous nature of the films and the increased surface area, a variety of chemical applications and sensor device architectures are possible. Because the GLAD process provides precise nanoscale control over the film structure, characteristics such as the mechanical, magnetic, and optical properties of the deposited film may be engineered for various applications. Depositing onto prepatterned substrates forces the columns to adopt a planar ordering, an important requirement for photonic crystal applications.
|
|||
|
Show PACS
|
|||
|
|
Microstructural evolution during film growth J. Vac. Sci. Technol. A 21, S117 (2003); http://dx.doi.org/10.1116/1.1601610 (12 pages) Online Publication Date: 2 September 2003
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Atomic-scale control and manipulation of the microstructure of polycrystalline thin films during kinetically limited low-temperature deposition, crucial for a broad range of industrial applications, has been a leading goal of materials science during the past decades. Here, we review the present understanding of film growth processes—nucleation, coalescence, competitive grain growth, and recrystallization—and their role in microstructural evolution as a function of deposition variables including temperature, the presence of reactive species, and the use of low-energy ion irradiation during growth. © 2003 American Vacuum Society. |
|||
|
Show PACS
|
|||
|
|
J. Vac. Sci. Technol. A 23, 1180 (2005); http://dx.doi.org/10.1116/1.1872014 (7 pages) Online Publication Date: 28 June 2005
Full Text:
Read Online (HTML)
|
Download PDF
|
|||||||||||||||||||||||||||||
|
Show Abstract
An attempt of observation of thermal diffusion across tin doped indium oxide (ITO) thin films perpendicular to the film surface has been carried out using a picosecond thermoreflectance measurement. ITO films sandwiched by molybdenum (Mo) films were prepared on fused silica substrate by rf magnetron sputtering using ITO and Mo multitargets. Such Mo/ITO/Mo layered structure was fabricated without exposure to the atmosphere between each deposition. The Mo films with a thickness of 70 nm are necessary because the wavelength of pulse laser used in this study is 780 nm at which wavelength ITO is transparent. The ITO films with a different thickness of 27, 46, and 62 nm were prepared as the intermediate layer in order to estimate thermal resistance at the interface between Mo/ITO. The resistivity, carrier density and Hall mobility of the ITO films ranged from 5.2 to 7.6×10−4 Ω cm, 3.5 to 3.9×1020 cm−3, and 23 to 35 cm2/Vs, respectively. The interface between the Mo films and the fused silica substrate was irradiated by picosecond laser pulse (2 ps). Heat generated by the pump laser pulse diffuses toward the top Mo surface across the three-layered films. Then the temperature changes at the Mo film surface, which was probed by reflectivity of another picosecond laser pulse. The heat diffusion time increased with the increase in the thickness of the ITO layers. The thermal diffusivity of the ITO films and thermal resistance at ITO/Mo interface were found to be 1.2×10−6 m2/s and 5.1×10−9 m2K/W, respectively.
|
||||||||||||||||||||||||||||||
|
Show PACS
|
||||||||||||||||||||||||||||||
|
|
MgZnO/ZnO quantum well nanowire heterostructures with large confinement energies J. Vac. Sci. Technol. A 29, 03A104 (2011); http://dx.doi.org/10.1116/1.3531709 (5 pages) Online Publication Date: 11 January 2011
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Mg0.25Zn0.75O/ZnO-quantum well nanowire heterostructures were grown with a three-step pulsed laser deposition process. To avoid shadowing effects during the coating, the ZnO nanowires were grown with a low area density on a ZnO buffer layer deposited on an a-plane sapphire substrate. By using spatially resolved cathodoluminescence measurements, the luminescence of axial and radial quantum wells were clearly distinguished. The large bandgap energy of the Mg0.25Zn0.75O barrier material ( ≈ 3.85 eV) made it possible to tune the energy of quantum wells from 3.4 to 3.7 eV. The homogeneity of the radial quantum well along the wire axis was probed, revealing that only small fluctuations of about 4 meV are found in the main part of the nanowire. Near the tip of the nanowire, the energy of the radial quantum well increases due to locally modified growth conditions reducing the growth rate by up to 15%. Furthermore, the growth rates of the axial and radial quantum wells were determined, showing that the one in axial direction is a factor of about 2 larger than the one in radial direction.
|
|||
|
Show PACS
|
|||
This Publication
Scitation
SPIN
Scitopia
Google Scholar
PubMed