Jump to Content
View Cart
Top 20 Most Read Articles
September 2008
The 20 articles with the most full-text downloads during the month, in descending order.
 |
Dry etching of polydimethylsiloxane for microfluidic systems J. Vac. Sci. Technol. A 20, 975 (2002); http://dx.doi.org/10.1116/1.1460896 (8 pages) Online Publication Date: 7 May 2002
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
A fluorine-based reactive ion etch (RIE) process has been developed to anisotropically dry etch the silicone elastomer polydimethylsiloxane (PDMS). This technique complements the standard molding procedure that makes use of forms made of thick SU-8 photoresist to produce features in the PDMS. Total gas pressure and the ratio of O2 to CF4 were varied to optimize etch rate. The RIE recipe developed in this study uses a 1:3 mixture of O2 to CF4 gas resulting in a highly directional and stable etch rate of approximately 20 μm per hour. Selective dry etching can be performed through a photolithographically patterned metal etch mask providing greater precision and alignment with preexisting molded features. The dry etch process is presented in this article along with a brief comparison to recently reported wet etch approaches. © 2002 American Vacuum Society. |
|||
|
Show PACS
|
|||
|
|
J. Vac. Sci. Technol. A 26, 1101 (2008); http://dx.doi.org/10.1116/1.2949232 (8 pages) Online Publication Date: 30 July 2008
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Novel quaternary Si–B–C–N materials are becoming increasingly attractive because of their possible high-temperature and harsh-environment applications. In the present work, amorphous Si–B–C–N films were deposited on Si and SiC substrates by reactive dc magnetron cosputtering using a single C–Si–B or B4C–Si target in nitrogen-argon gas mixtures. A fixed 75% Si fraction in the target erosion areas, a rf induced negative substrate bias voltage of −100 V, a substrate temperature of 350 °C, and a total pressure of 0.5 Pa were used in the depositions. The corresponding discharge and deposition characteristics (such as the ion-to-film-forming particle flux ratio, ion energy per deposited atom, and deposition rate) are presented to understand complex relationships between process parameters and film characteristics. Films deposited under optimized conditions (B4C–Si target, 50% N2+50% Ar gas mixture), possessing a composition (in at. %) Si32–34B9–10C2–4N49–51 with a low (less than 5 at. %) total content of hydrogen and oxygen, exhibited extremely high oxidation resistance in air at elevated temperatures (even above 1500 °C). Formation of protective surface layers (mainly composed of Si and O) was proved by high-resolution transmission electron microscopy, Rutherford backscattering spectrometry, and x-ray diffraction measurements after oxidization. Amorphous structure of the Si–B–C–N films was maintained under the oxidized surface layers after annealing in air up to 1700 °C (a limit imposed by thermogravimetric analysis in oxidative atmospheres).
|
|||
|
Show PACS
|
|||
|
|
Atomic-scale investigation of graphene formation on 6H-SiC(0001) J. Vac. Sci. Technol. A 26, 932 (2008); http://dx.doi.org/10.1116/1.2900661 (6 pages) Online Publication Date: 1 July 2008
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
The growth of graphene on the silicon-terminated face of 6H-SiC(0001) was investigated by scanning tunneling microscopy (STM) measurements. The initial stages of ultrahigh vacuum graphitization resulted in the growth of individual graphene sheets on random SiC terraces. These initial graphene sheets contained few defects, and the regions of clean SiC were free of contamination, exhibiting a 6
 ×6R30° surface reconstruction. However, graphitization to multilayer thickness resulted in multiple defects, as observed with the STM. A high density of defects was observed, which may be attributed to the initial treatment of the SiC wafer. We characterize these defects, showing that they are located predominantly below the first layer of graphene. |
|||
|
Show PACS
|
|||
|
|
Structural and electronic properties of bilayer epitaxial graphene J. Vac. Sci. Technol. A 26, 938 (2008); http://dx.doi.org/10.1116/1.2944257 (6 pages) Online Publication Date: 1 July 2008
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Scanning tunneling microscopy and scanning tunneling spectroscopy (STS) are used to study the structural and electronic properties of bilayer epitaxial graphene on SiC(0001). Topographic images reveal that graphene conforms to the SiC interface morphology and is observed to be continuous across steps separating adjoining terraces. Bilayer epitaxial graphene is shown to be Bernal stacked as is evidenced by bias-dependent topographic imaging. STS maps of the differential conductance show that graphene lattice defects cause scattering of charge carriers near the Fermi level. An analysis of stationary scattering patterns observed in the conductance maps determines the energy-momentum dispersion relation within 100 meV of the Fermi level. In contrast to lattice defects, disorder at the SiC interface and at subsurface steps plays a much lesser role in the scattering of charge carriers.
|
|||
|
Show PACS
|
|||
|
|
Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited) J. Vac. Sci. Technol. A 26, 697 (2008); http://dx.doi.org/10.1116/1.2905246 (8 pages) Online Publication Date: 30 June 2008
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Lacking a suitable gate insulator, practical GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) have remained all but a dream for more than four decades. The physics and chemistry of III–V compound semiconductor surfaces or interfaces are problems so complex that our understanding is still limited even after enormous research efforts. Most research is focused on surface pretreatments, oxide formation, and dielectric materials; less attention is paid to the III–V substrate itself. The purpose of this article is to show that device physics more related to III–V substrates is as important as surface chemistry for realizing high-performance III–V MOSFETs. The history and present status of III–V MOSFET research are briefly reviewed. A model based on the charge neutrality level is proposed to explain all experimental work he performed on III–V MOSFETs using ex situ atomic-layer-deposited high-k dielectrics. This model can also explain all reported experimental observations on III–V MOSFETs using in situ molecular-beam-expitaxy-grown Ga2O3(Gd2O3) as a gate dielectric. Related perspectives are also discussed to understand III–V MOS capacitance-voltage measurements.
|
|||
|
Show PACS
|
|||
|
|
J. Vac. Sci. Technol. A 25, 1317 (2007); http://dx.doi.org/10.1116/1.2764082 (19 pages) Online Publication Date: 30 July 2007
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Physical vapor deposition under conditions of obliquely incident flux and limited adatom diffusion results in a film with a columnar microstructure. These columns will be oriented toward the vapor source and substrate rotation can be used to sculpt the columns into various morphologies. This is the basis for glancing angle deposition (GLAD), a technique for fabricating porous thin films with engineered structures. The origin of the columnar structure characteristic of GLAD films is discussed in terms of nucleation processes and structure zone models. As deposition continues, the columnar structures are influenced by atomic-scale ballistic shadowing and surface diffusion. Competitive growth is observed where the tallest columns grow at the expense of smaller features. The column shape evolves during growth, and power-law scaling behavior is observed as shown in both experimental results and theoretical simulations. Due to the porous nature of the films and the increased surface area, a variety of chemical applications and sensor device architectures are possible. Because the GLAD process provides precise nanoscale control over the film structure, characteristics such as the mechanical, magnetic, and optical properties of the deposited film may be engineered for various applications. Depositing onto prepatterned substrates forces the columns to adopt a planar ordering, an important requirement for photonic crystal applications.
|
|||
|
Show PACS
|
|||
|
|
Cyclic, cryogenic, highly anisotropic plasma etching of silicon using SF6/O2 J. Vac. Sci. Technol. A 26, 1182 (2008); http://dx.doi.org/10.1116/1.2960557 (6 pages) Online Publication Date: 6 August 2008
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
The authors report on the development and characterization of a plasma etching method that utilizes process steps common to both the well-known Bosch and the cryogenic deep reactive ion etching methods for silicon. This hybrid process uses cyclical etch steps that alternate between etching and passivating chemistries as in the Bosch process, while still maintaining sample temperatures at −100 °C on a cryogenically cooled stage. The advantages of this process are superior control of wall profiles for isolated features, minimization of grass formation, and the elimination of an expensive gas, c-C4F8, required in the Bosch passivation step. The authors show examples of x-ray optic elements deep etched to 100 μm depth with the cyclic cryogenic process.
|
|||
|
Show PACS
|
|||
|
|
Pulsed dc self-sustained magnetron sputtering J. Vac. Sci. Technol. A 26, 1277 (2008); http://dx.doi.org/10.1116/1.2966436 (5 pages) Online Publication Date: 20 August 2008
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
The magnetron sputtering has become one of the commonly used techniques for industrial deposition of thin films and coatings due to its simplicity and reliability. At standard magnetron sputtering conditions (argon pressure of ∼ 0.5 Pa) inert gas particles (necessary to sustain discharge) are often entrapped in the deposited films. Inert gas contamination can be eliminated during the self-sustained magnetron sputtering (SSS) process, where the presence of the inert gas is not a necessary requirement. Moreover the SSS process that is possible due to the high degree of ionization of the sputtered material also gives a unique condition during the transport of sputtered particles to the substrate. So far it has been shown that the self-sustained mode of magnetron operation can be obtained using dc powering (dc-SSS) only. The main disadvantage of the dc-SSS process is its instability related to random arc formation. In such case the discharge has to be temporarily extinguished to prevent damaging both the magnetron source and power supply. The authors postulate that pulsed powering could protect the SSS process against arcs, similarly to reactive pulsed magnetron deposition processes of insulating thin films. To put this concept into practice, (i) the high enough plasma density has to be achieved and (ii) the type of pulsed powering has to be chosen taking plasma dynamics into account. In this article results of pulsed dc self-sustained magnetron sputtering (pulsed dc-SSS) are presented. The planar magnetron equipped with a 50 mm diameter and 6 mm thick copper target was used during the experiments. The maximum target power was about 11 kW, which corresponded to the target power density of ∼ 560 W/cm2. The magnetron operation was investigated as a function of pulse frequency (20–100 kHz) and pulse duty factor (50%–90%). The discharge (argon) extinction pressure level was determined for these conditions. The plasma emission spectra (400–410 nm range) and deposition rates were observed for both dc and pulsed dc self-sustained sputtering processes. The pulse characteristics of the voltage and current of the magnetron source during pulsed dc-SSS operation are shown. The presented results illustrate that a stable pulsed dc-SSS process can be obtained at a pulsing frequency in the range of 60–90 kHz and duty factor of 80%–90%.
|
|||
|
Show PACS
|
|||
|
|
J. Vac. Sci. Technol. A 23, 1208 (2005); http://dx.doi.org/10.1116/1.1897697 (7 pages) Online Publication Date: 28 June 2005
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
CdTe and CuIn1−xGaxSe2−ySy (CIGSS) are ideal candidates for thin-film solar cells. Present photovoltaic (PV) conversion efficiencies of champion thin-film solar cells are: CuIn1−xGaxSe2 (CIGS) 19.5%, CdTe 16.5%, and a‐Si:H 12.4%. Thin-film PV modules could spearhead production growth of photovoltaics in the United States because of their added production capacity. For this purpose, module efficiencies must be improved to the 13%–15% range. Obtaining Ohmic contacts is difficult, especially for CdTe, because of the inherently low p-type doping level. Therefore, increasing the p-type doping level is important. Growth of CIGSS film must be controlled carefully as it transitions from Cu-rich to In-rich composition. Other issues for CIGSS cells are minimizing indium consumption, and increasing process throughput of selenization∕sulfurization and transparent conducting oxide deposition. Development of all-dry processing for CdS deposition would be beneficial for both cells. This paper discusses basic devices and related issues.
|
|||
|
Show PACS
|
|||
|
|
On the electrochemical etching of tips for scanning tunneling microscopy J. Vac. Sci. Technol. A 8, 3570 (1990); http://dx.doi.org/10.1116/1.576509 (6 pages)
Full Text:
|
Download PDF
|
|||
|
Show Abstract
The sharpness of tips used in scanning tunneling microscopy (STM) is one factor which affects the resolution of the STM image. In this paper, we report on a direct‐current (dc) drop‐off electrochemical etching procedure used to sharpen tips for STM. The shape of the tip is dependent on the meniscus which surrounds the wire at the air–electrolyte interface. The sharpness of the tip is related to the tensile strength of the wire and how quickly the electrochemical reaction can be stopped once the wire breaks. We have found that the cutoff time of the etch circuit has a significant effect on the radius of curvature and cone angle of the etched tip; i.e., the faster the cutoff time, the sharper the tip. We have constructed an etching circuit with a minimum cut‐off time of 500 ns which uses two fast metal–oxide semiconductor field effect transistors (MOSFET) and a high‐speed comparator. The radius of curvature of the tips can be varied from approximately 20 to greater than 300 nm by increasing the cutoff time of the circuit. |
||||
|
Show PACS
|
||||
|
|
J. Vac. Sci. Technol. A 26, 1362 (2008); http://dx.doi.org/10.1116/1.2969902 (2 pages) Online Publication Date: 28 August 2008
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Abstract Unavailable
|
|||
|
Show PACS
|
|||
|
|
Nanosphere lithography: A materials general fabrication process for periodic particle array surfaces J. Vac. Sci. Technol. A 13, 1553 (1995); http://dx.doi.org/10.1116/1.579726 (6 pages)
Full Text:
|
Download PDF
|
||
|
Show Abstract
In this article nanosphere lithography (NSL) is demonstrated to be a materials general fabrication process for the production of periodic particle array (PPA) surfaces having nanometer scale features. A variety of PPA surfaces have been prepared using identical single‐layer (SL) and double‐layer (DL) NSL masks made by self‐assembly of polymer nanospheres with diameter, D=264 nm, and varying both the substrate material S and the particle material M. In the examples shown here, S was an insulator, semiconductor, or metal and M was a metal, inorganic ionic insulator, or an organic π‐electron semiconductor. PPA structural characterization and determination of nanoparticle metrics was accomplished with atomic force microscopy. This is the first demonstration of nanometer scale PPA surfaces formed from molecular materials. © 1995 American Vacuum Society |
|||
|
Show PACS
|
|||
|
|
J. Vac. Sci. Technol. A 26, 587 (2008); http://dx.doi.org/10.1116/1.2929849 (5 pages) Online Publication Date: 9 June 2008
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Indium nitride (InN) epilayers have been successfully grown on Si (111) substrates with low-temperature (450 °C) grown InN and high-temperature (1050 °C) grown AlN (InN/AlN) double-buffer layers by atmospheric-pressure metal-organic chemical vapor deposition (AP-MOCVD). X-ray diffraction characterizations indicated that highly (0001)-oriented hexagonal InN was grown on Si (111) substrate. Photoluminescence (PL) analyses performed at room temperature showed a strong emission at 0.72 eV with a full width at half maximum of 121 meV. Excitation intensity dependent measurements demonstrated the PL mechanism to be the band-to-band transition. Time-resolved PL could be fitted by a single exponential exhibiting an ordered film and a recombination lifetime of around 0.85 ns. In particular, transmission electron microscopy characterizations indicated that the use of AlN first buffer is very important to achieve a structurally uniform (0001)-oriented InN epilayer on Si (111) by AP-MOCVD.
|
|||
|
Show PACS
|
|||
|
|
Effects of hydrogen ambient and film thickness on ZnO:Al properties J. Vac. Sci. Technol. A 26, 692 (2008); http://dx.doi.org/10.1116/1.2891261 (5 pages) Online Publication Date: 30 June 2008
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Undoped ZnO and ZnO:Al (0.1, 0.2, 0.5, 1.0, and 2.0 wt. % Al2O3) films were deposited by rf magnetron sputtering. Controlled incorporation of H2 in the Ar sputtering ambient for films grown at substrate temperatures up to 200 °C results in mobilities exceeding 50 cm2 V−1 s−1 when using targets containing 0.1 and 0.2 wt. % Al2O3. Temperature-dependent Hall measurements show evidence of phonon scattering as the dominant scattering mechanism in these lightly Al-doped films, while ionized impurity scattering appears increasingly dominant at higher doping levels. A combination of compositional and structural analysis shows that hydrogen expands the ZnO lattice normal to the plane of the substrate and desorbs from ZnO at ∼ 250 °C according to temperature-programmed desorption and annealing experiments.
|
|||
|
Show PACS
|
|||
|
|
Plasma deposition of optical films and coatings: A review J. Vac. Sci. Technol. A 18, 2619 (2000); http://dx.doi.org/10.1116/1.1314395 (27 pages)
Full Text:
|
Download PDF
|
||
|
Show Abstract
Plasma enhanced chemical vapor deposition (PECVD) is being increasingly used for the fabrication of transparent dielectric optical films and coatings. This involves single-layer, multilayer, graded index, and nanocomposite optical thin film systems for applications such as optical filters, antireflective coatings, optical waveguides, and others. Beside their basic optical properties (refractive index, extinction coefficient, optical loss), these systems very frequently offer other desirable “functional” characteristics. These include hardness, scratch, abrasion, and erosion resistance, improved adhesion to various technologically important substrate materials such as polymers, hydrophobicity or hydrophilicity, long-term chemical, thermal, and environmental stability, gas and vapor impermeability, and others. In the present article, we critically review the advances in the development of plasma processes and plasma systems for the synthesis of thin film high and low index optical materials, and in the control of plasma–surface interactions leading to desired film microstructures. We particularly underline those specificities of PECVD, which distinguish it from other conventional techniques for producing optical films (mainly physical vapor deposition), such as fabrication of graded index (inhomogeneous) layers, control of interfaces, high deposition rate at low temperature, enhanced mechanical and other functional characteristics, and industrial scaleup. Advances in this field are illustrated by selected examples of PECVD of antireflective coatings, rugate filters, integrated optical devices, and others. © 2000 American Vacuum Society. |
|||
|
Show PACS
|
|||
|
|
J. Vac. Sci. Technol. A 26, 1172 (2008); http://dx.doi.org/10.1116/1.2960554 (6 pages) Online Publication Date: 6 August 2008
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
A trench bevel etch process is developed as a method to produce trench profiles with a prerequired angle. This process depends on both surface reaction and gas conductance along the trench. To study the surface reaction probability, activation energies were measured for SF6 and CF4 chemistries and were found to be 6 and 140 meV, respectively. It has been demonstrated that CF4 etch chemistry is in surface-reaction-rate-limited regime and contributes little to the trench beveling. SF6 chemistry with its low activation energy is in reactant-transport-rate-limited regime and contributes significantly to the bevel process. The dependences of bevel etch on trench aspect ratio was also investigated in detail. It has been found that high aspect ratio trench produces larger bevel angle than that does for small aspect ratio. A phenomenological model was constructed by introducing reactant conduction loss L and sidewall reaction loss S to quantitatively describe the effects of both reactant transport and surface reaction. Through comparison of theoretical modeling and experiment, an S value between 0.8 and 1 is reached to explain the experimental results from SF6 chemistry. This result demonstrates the SF6 is a spontaneous surface reaction and is consistent with our activation energy measurement.
|
|||
|
Show PACS
|
|||
|
|
J. Vac. Sci. Technol. A 18, 2646 (2000); http://dx.doi.org/10.1116/1.1290371 (15 pages)
Full Text:
|
Download PDF
|
|||||||||||||||||||||||||||
|
Show Abstract
The bulk of developmental work on transparent conducting oxides (TCOs) has been somewhat empirical. This statement applies both to more familiar materials such as indium tin oxide (ITO) and to less-well-known materials that have emerged in recent years. In this article, we place a greater emphasis on more fundamental research. Our eventual goal is to gain a thorough understanding of these materials, their potential for further improvement, whether or not they suggest new and potentially superior materials, and the way their properties are influenced by structural and other issues. We also hope to provide guidelines to other researchers working in this area. We have investigated films of cadmium oxide (CdO), cadmium stannate (Cd2SnO4 or CTO), and zinc stannate [Zn2SnO4 (ZTO)]. The CdO was prepared by chemical-vapor deposition, whereas the stannates were prepared by rf sputtering. In both cases, Corning 7059 glass substrates were used. However, some depositions were also made onto tin oxide, which had a profound effect on the nucleation of CdO, in particular. It is well known that a high free-carrier mobility is essential for a TCO with near-ideal electro-optical properties. Increasing the free-carrier concentration also increases the free-carrier absorbance but a higher mobility reduces it. We have achieved free-electron mobilities in CdO (Eg∼2.4 eV) of greater than 200 cm2 V−1 s−1, of almost 80 cm2 V−1 s−1 in CTO (Eg∼3.1 eV), but of only 10–15 cm2 V−1 s−1 in ZTO (Eg∼3.6 eV). We have characterized these materials, and will show key data, using techniques as diverse as the Nernst–Ettingshausen effect; Mössbauer, Raman, optical, and near-infrared spectroscopies; atomic-force and high-resolution electron microscopy; and x-ray diffraction. These measurements have enabled us to determine the effective mass of the free carriers and their relaxation time, the probable distributions of cations between octahedral and tetrahedral sites, the role of the deposition parameters on the carrier concentrations, and the nature of the dominant scattering mechanisms. We also consider issues relating to toxicity of cadmium and to reserves of indium. Both are of great significance to prospective large-volume manufacturers of TCO films and must be taken into account by researchers. © 2000 American Vacuum Society. |
||||||||||||||||||||||||||||
|
Show PACS
|
||||||||||||||||||||||||||||
|
|
Process integration for through-silicon vias J. Vac. Sci. Technol. A 23, 824 (2005); http://dx.doi.org/10.1116/1.1864012 (6 pages) Online Publication Date: 24 June 2005
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
The formation of a through-silicon via (TSV) enables three-dimensional (3D) interconnects for chip-stacking applications that will be especially important for integrating heterogeneous devices. Many processing steps are involved with the major areas including: via formation; deposition of via insulation, barrier, and Cu seed films; Cu electroplating for via-fill; wafer thinning; and backside processing. The via diameter is 4–8 μm, via depth is 15–20 μm, and a 20 μm pitch is used in this study. Each step will be described in the process flow with the considerations discussed for successful process integration.
|
|||
|
Show PACS
|
|||
|
|
Reduction in hydrogen outgassing from stainless steels by a medium-temperature heat treatment J. Vac. Sci. Technol. A 26, 1166 (2008); http://dx.doi.org/10.1116/1.2956625 (6 pages) Online Publication Date: 6 August 2008
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
The authors carried out heat treatments, in-vacuum or in-air at 400 °C, to reduce the hydrogen outgassing rate from stainless steels. An outgassing rate as low as 2×10−14 Torr ℓ s−1 cm−2 was routinely achieved by a medium-temperature bakeout, but it took much longer time than reported to perform intensive thermal treatment. The result shows that the diffusion process governs degassing only at the early stage of degassing while the recombination limits outgassing at low concentrations. Air baked chambers had somewhat lower outgassing rates than in-vacuum baked chambers, suggesting that the surface oxide acts as a further barrier for H2 outgassing. However, the main effect may be attributed to the removal of mobile hydrogen through diffusion. The results showed that the ultralow outgassing rate can be reproducibly achieved for stainless steel chambers with the established heat treatment procedure. The study also showed that the ultralow outgassing property of a treated chamber can be restored by a low temperature (>150 °C) postbakeout, after exposure to ambient air.
|
|||
|
Show PACS
|
|||
|
|
Local supply of gas in vacuum: Application to a field ion source J. Vac. Sci. Technol. A 26, 1331 (2008); http://dx.doi.org/10.1116/1.2968689 (5 pages) Online Publication Date: 28 August 2008
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
The flow of hydrogen, helium, and nitrogen through a millimeter long and micrometer size annulus capillary from a high pressure chamber to a low pressure chamber is measured in a wide pressure range. The corresponding gas conductance is deduced. Molecular, transition, and viscous regimes are observed. The local supply of gas strongly increases with pressure in the viscous regime up to a regime controlled by capillary exit loss. Based on such a geometry, the gas supply to a field ion source with a coaxial structure is shown to be increased by more than three orders of magnitude compared to a conventional supply.
|
|||
|
Show PACS
|
|||
This Publication
Scitation
SPIN
Scitopia
Google Scholar
PubMed