Modification of Si field emitter surfaces by chemical conversion to SiC

Liu, J.; Son, U. T.; Stepanova, A. N.; Christensen, K. N.; Wojak, G. J.; Givargizov, E. I.; Bachmann, K. J.; Hren, J. J.

doi:doi:10.1116/1.587379

Volume/Page
Keyword
DOI
Citation
Advanced

Volume: Page/Article:

Search Content Type

article doi:

Citation:

You are not logged in to this journal. Log In

Journal of Vacuum Science & Technology B / Volume 12 / Issue 2

Previous Article | Next Article

J. Vac. Sci. Technol. B 12, 717 (1994); doi:10.1116/1.587379 (5 pages)

Modification of Si field emitter surfaces by chemical conversion to SiC

J. Liu, U. T. Son, A. N. Stepanova, K. N. Christensen, G. J. Wojak, E. I. Givargizov, K. J. Bachmann, and J. J. Hren

Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695

Abstract

Citing Articles (6)

Alerts
- Alert Me When Cited
- Alert Me When Corrected
Tools
Share
- Email Abstract
- Connotea
- CiteULike
- del.icio.us
- BibSonomy
- Tweet this Article
- Add to Facebook

Full Text: Download PDF | Buy PDF (US$28) | View Cart

Silicon field emitters have been modified by coating with a thin SiC film through a chemical conversion process. Silicon carbide was formed on Si emitter surfaces by reacting with ethylene gas at temperatures between 850 and 950 °C using pressures as high as 5×10⁻³ Torr. The thickness of the coatings ranged from 2 to 500 nm, determined by a combination of reaction time, pressure, and temperature. Stable emission currents above 10 μÅ were measured from individual SiC coated emitters.