Metal contacts on semiconductors: The adsorption of Sb, Sn, and Ga on InP(110) cleaved surfaces

Williams, R. H.; McKinley, A.; Hughes, G. J.; Humphreys, T. P.; Maani, C.

doi:doi:10.1116/1.582838

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Journal of Vacuum Science & Technology B / Volume 2 / Issue 3

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J. Vac. Sci. Technol. B 2, 561 (1984); http://dx.doi.org/10.1116/1.582838 (8 pages)

Metal contacts on semiconductors: The adsorption of Sb, Sn, and Ga on InP(110) cleaved surfaces

R. H. Williams¹, A. McKinley¹, G. J. Hughes¹, T. P. Humphreys¹, and C. Maani²

¹Physics Department, University College, Cardiff, United Kingdom
²Physics Department, The New University of Ulster, Coleraine, N. Ireland, United Kingdom

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We have studied the adsorption and growth of Ga (group III), Sn (group IV), and Sb (group V) on InP(110) clean cleaved surfaces, using a range of surface sensitive techniques. The adsorption processes differ for the three adsorbate elements ranging from cluster growth for Ga to layer upon layer growth for Sb. The systematics of the adsorption processes as well as the mechanisms driving the chemical reactions and interdiffusion are considered and strong indications of a close relationship between adlayer clustering and the movement of atoms across the interface is reported. The electrical barriers at these interfaces are also briefly discussed as well as some studies at liquid nitrogen temperatures for Sn and Al overlayers.