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J. Vac. Sci. Technol. B 22, 932 (2004); http://dx.doi.org/10.1116/1.1714985 (17 pages)

Recent advances in processing of ZnO

S. J. Pearton1, D. P. Norton1, K. Ip1, Y. W. Heo1, and T. Steiner2

1Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
2Air Force Office of Scientific Research, Arlington, Virginia 22217

(Published online 26 April 2004)

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A review is given of recent results in developing improved fabrication processes for ZnO devices with the possible application to UV light emitters, spin functional devices, gas sensors, transparent electronics, and surface acoustic wave devices. There is also interest in integrating ZnO with other wide band-gap semiconductors, such as the AlInGaN system. In this article, we summarize recent progress in controlling n- and p-type doping, materials processing methods, such as ion implantation for doping or isolation, Ohmic and Schottky contact formation, plasma etching, the role of hydrogen in the background n-type conductivity of many ZnO films, and finally, the recent achievement of room-temperature ferromagnetism in transition-metal (Mn or Co)-doped ZnO. This may lead to another class of spintronic devices, in which the spin of the carriers is exploited rather than the charge as in more conventional structures. © 2004 American Vacuum Society.

© 2004 American Vacuum Society

KEYWORDS and PACS

PACS

  • 85.40.Ry

    Impurity doping, diffusion and ion implantation technology

  • 85.60.Jb

    Light-emitting devices

  • 73.30.+y

    Surface double layers, Schottky barriers, and work functions

  • 52.77.Bn

    Etching and cleaning

  • 07.07.Df

    Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

  • 01.30.Rr

    Surveys and tutorial papers; resource letters

  • 81.05.Dz

    II-VI semiconductors

  • 75.50.Dd

    Nonmetallic ferromagnetic materials

  • 75.50.Pp

    Magnetic semiconductors

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PUBLICATION DATA

ISSN

0734-211X (print)  

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