Inductively coupled plasma etching of amorphous Al2O3 and TiO2 mask layers grown by atomic layer deposition

Dekker, J.; Kolari, K.; Puurunen, R. L.

doi:doi:10.1116/1.2353844

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Journal of Vacuum Science & Technology B / Volume 24 / Issue 5 / Regular Articles

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J. Vac. Sci. Technol. B 24, 2350 (2006); http://dx.doi.org/10.1116/1.2353844 (6 pages)

Inductively coupled plasma etching of amorphous Al₂O₃ and TiO₂ mask layers grown by atomic layer deposition

J. Dekker, K. Kolari, and R. L. Puurunen

VTT Technical Research Center of Finland, Espoo FI-02044, Finland

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(Published online 21 September 2006)

Abstract

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Al₂O₃ and TiO₂ deposited by atomic layer deposition are evaluated as etch masks for dry etch processes in an inductively coupled plasma reactor using the Bosch process. In the inductively coupled plasma chamber during deep silicon etching, because of the chemical nature of the etch process and the inert nature of Al₂O₃, the result is exceptional selectivity for silicon over as-deposited Al₂O₃, particularly at relatively low bias and high pressures used for through-wafer etching. TiO₂ is less resistant and appears to suffer more from chemical attack. In both cases, etch rate increases slowly with increasing rf bias. However, there is a sharp discontinuity in the etch rate of Al₂O₃ when the bias power is operated in a pulsed low-frequency mode. This is thought to be due to increased sputtering from heavier ions. Preliminary studies indicate the etching conditions for Al₂O₃ may be extended into a dielectric etch regime requiring more study.

ACKNOWLEDGMENTS

The authors would like to thank Jaakko Saarilahti for growth of samples, Meeri Partanen for processing of wafers, Sanna Arpiainen for detailed measurements of fluorocarbon layers, and Sven Lindfors of Picosun Oy for technical discussions.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS
CONCLUSIONS

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KEYWORDS and PACS

Keywords

alumina, titanium compounds, masks, dielectric thin films, amorphous state, sputter etching, atomic layer deposition

PACS

81.65.Cf

Surface cleaning, etching, patterning
52.77.Bn

Etching and cleaning
77.55.-g

Dielectric thin films
77.84.Bw

Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.84.Ek

Niobates and tantalates
77.84.Cg

PZT ceramics and other titanates
81.15.Gh

Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

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History

Received 3 May 2006
Accepted 17 August 2006
Published online 21 September 2006

Digital Object Identifier

http://dx.doi.org/10.1116/1.2353844

PUBLICATION DATA

ISSN

1071-1023 (print)

Publisher

American Vacuum Society

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