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Journal of Vacuum Science & Technology B / Volume 27 / Issue 1 / Regular Articles

J. Vac. Sci. Technol. B 27, 161 (2009); http://dx.doi.org/10.1116/1.3054281 (6 pages)

REBL: A novel approach to high speed maskless electron beam direct write lithography

Paul Petric, Chris Bevis, Allen Carroll, Henry Percy, Marek Zywno, Keith Standiford, Alan Brodie, Noah Bareket, and Luca Grella

KLA-Tencor Corporation, 160 Rio Robles, San Jose, California 95134

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(Published online 29 January 2009)

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The system concepts used in a novel approach for a high throughput maskless lithography system called reflective electron beam lithography (REBL) are described. The system is specifically targeting five to seven wafer levels per hour throughput on average at the 45 nm node, with extendibility to the 32 nm node and beyond. REBL incorporates a number of novel technologies to generate and expose lithographic patterns at estimated throughputs considerably higher than electron beam lithography has been able to achieve as yet. A patented reflective electron optic concept enables the unique approach utilized for the digital pattern generator (DPG). The DPG is a complementary metal oxide semiconductor application specific integrated circuit chip with an array of small, independently controllable metallic cells or pixels, which act as an array of electron mirrors. In this way, the system is capable of generating the pattern to be written using massively parallel exposure by ∼ 1×106 beams at extremely high data rates ( ∼ 1 Tbit/s compressed data). A rotary stage concept using a rotating platen carrying multiple wafers optimizes the writing strategy of the DPG.

© 2009 American Vacuum Society

ACKNOWLEDGMENTS

This project is supported by DARPA and KLA-Tencor under DARPA Agreement No. HR0011-07-9-0007. The authors wish to thank the people at DARPA, SPAWAR, and NRL for their support and many helpful suggestions. Support in resist technology is provided by IBM Almaden Research Center and MIT-Lincoln Laboratory.
Presented at the 52nd International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication Conference held in Portland, Oregon on May 27–30, 2008.

Article Outline

  1. INTRODUCTION
  2. REBL NANOWRITER CONCEPT
  3. REFLECTIVE ELECTRON OPTICS
  4. DIGITAL PATTERN GENERATOR
  5. TIME DOMAIN INTEGRATION AND GRAY TONE EXPOSURE
  6. ROTARY STAGE
  7. WAFER REGISTRATION
  8. SUMMARY

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KEYWORDS and PACS

Keywords

application specific integrated circuits, CMOS integrated circuits, electron beam lithography, electron optics, mirrors, nanolithography

PACS

  • 85.40.Hp

    Lithography, masks and pattern transfer

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History
Received 9 June 2008
Accepted 23 November 2008
Published online 29 January 2009
Digital Object Identifier
http://dx.doi.org/10.1116/1.3054281

PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

Publisher

American Vacuum Society

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