Improved characterization of Fourier transform infrared spectra analysis for post-etched ultra-low-κ SiOCH dielectric using chemometric methods

Oszinda, Thomas; Beyer, Volkhard; Schaller, Matthias; Fischer, Daniel; Bartsch, Christin; Schulz, Stefan E.

doi:doi:10.1116/1.3043466

Volume/Page
Keyword
DOI
Citation
Advanced

Volume: Page/Article:

Search Content Type

article doi:

Citation:

You are not logged in to this journal. Log In

Journal of Vacuum Science & Technology B / Volume 27 / Issue 1 / PAPERS FROM THE 15TH WORKSHOP ON DIELECTRICS IN MICROELECTRONICS

Previous Article | Next Article

J. Vac. Sci. Technol. B 27, 521 (2009); http://dx.doi.org/10.1116/1.3043466 (6 pages)

Improved characterization of Fourier transform infrared spectra analysis for post-etched ultra-low-κ SiOCH dielectric using chemometric methods

Thomas Oszinda¹, Volkhard Beyer¹, Matthias Schaller², Daniel Fischer², Christin Bartsch², and Stefan E. Schulz³

¹Fraunhofer Center Nanoelectronic Technologies (CNT), 01099 Dresden, Germany
²AMD Saxony LLC & Co. KG, 01109 Dresden, Germany
³TU Chemnitz/ZfM and Fraunhofer IZM Chemnitz, 09126 Germany

View Map

(Published online 9 February 2009)

Abstract

References (24)

Citing Articles (1)

Article Objects (13)

Alerts
- Alert Me When Cited
- Alert Me When Corrected
Tools
Share
- Email Abstract
- CiteULike
- del.icio.us
- BibSonomy
- Tweet this Article
- Add to Facebook

Full Text: Read Online (HTML) | Download PDF | Rent Article | Buy PDF (US$28) | View Cart

The structural changes due to post-ash and post-ash treatments on chemical vapor deposited ultra-low-κ (ULK) SiOCH dielectric films were studied by Auger electron spectroscopy (AES) and Fourier transform infrared spectroscopy (FTIR). Changes in the ULK layer with respect to the carbon content were analyzed. For the application of different plasma gases for photoresist removal and further post-clean and anneal treatments first a reduction of carbon was observed. Using AES it was found that the carbon was removed up to ∼ 140 nm. Accompanied with the carbon loss a modification of chemical bonds was observed with FTIR, whereas the analysis of FTIR spectra was improved by means of chemometric methods. A principle component analysis was applied for qualitative analysis, which focuses on changes of infrared vibration peaks. This provides a fast assessment of chemical bond modifications. A partial least square regression was used to correlate the carbon loss with the infrared spectra. It is shown that the regression method allows a prediction of the carbon loss. For both methods the applicability and their limitations with respect to FTIR spectra are discussed.

ACKNOWLEDGMENTS

The work described in this publication has been funded in line with the technology funding for regional development (ERDF) of the European Union and by funds of the Free State of Saxony.

Article Outline

INTRODUCTION
EXPERIMENT
RESULT AND DISCUSSION
1. Structural results
  1. Carbon depth profiling using Auger electron spectroscopy
  2. Investigation of as-measured FTIR spectra
2. Chemometric results
  1. Principle component analysis (PCA)
  2. Partial least square regression (PLS)
CONCLUSION

View more related articles.

KEYWORDS and PACS

Keywords

annealing, Auger electron spectra, bonds (chemical), Fourier transform spectra, infrared spectra, least squares approximations, low-k dielectric thin films, photoresists, principal component analysis, regression analysis, silicon compounds, porous ultralow-k dielectric, SiOCH, Black Diamond II

PACS

78.66.Nk

Insulators
81.15.Gh

Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g

Dielectric thin films
78.30.Am

Elemental semiconductors and insulators
81.40.Ef

Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Fv

Electron impact: Auger emission

RELATED DATABASES

To view database links for this article, you need to log in.

History

Received 16 July 2008
Accepted 10 November 2008
Published online 9 February 2009

Digital Object Identifier

http://dx.doi.org/10.1116/1.3043466

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

For access to fully linked references, you need to log in.

For access to citing articles, you need to log in.

Figures (10) Tables (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)