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Nov 2009

Volume 27, Issue 6, pp. L33-3260

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Proton irradiation effects on Sb-based heterojunction bipolar transistors

C. F. Lo, H.-Y. Kim, J. Kim, Shu-Han Chen, Sheng-Yu Wang, Jen-Inn Chyi, B. Y. Chou, K. H. Chen, Y. L. Wang, C. Y. Chang, S. J. Pearton, L. I. Kravchenko, S. Jang, and F. Ren

J. Vac. Sci. Technol. B 27, L33 (2009); http://dx.doi.org/10.1116/1.3246405 (5 pages)

Online Publication Date: 22 October 2009

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In0.52Al0.48As/In0.39Ga0.61As0.77Sb0.23/In0.53Ga0.47As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2×1011 to 2×1015 protons/cm2. The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2×1011 cm−2, which was equivalent to around 40 years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well suited to space or nuclear industry applications.
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85.30.Pq Bipolar transistors
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors

Resonant structures based on amorphous silicon suboxide doped with Er3+ with silicon nanoclusters for an efficient emission at 1550 nm

D. S. L. Figueira, D. Mustafa, L. R. Tessler, and N. C. Frateschi

J. Vac. Sci. Technol. B 27, L38 (2009); http://dx.doi.org/10.1116/1.3246406 (4 pages)

Online Publication Date: 22 October 2009

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The authors present a resonant approach to enhance 1550 nm emission efficiency of amorphous silicon suboxide doped with Er3+ (a-SiOxEr〉) layers with silicon nanoclusters (Si-NC). Our results show an important result toward enabling the use of silicon-based material for active photonic component fabrication. Two distinct techniques were combined to fabricate a structure that allowed increasing approximately 12 times the 1550 nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOxEr matrix was deposited by reactive rf cosputtering. Second, an extra pump channel (4I15/2 to 4I9/2) of Er3+ was created due to Si-NC formation on the same a-SiOxEr matrix via a hard annealing at 1150 °C. The SiO2 and the a-SiOxEr thicknesses were designed to support resonances near the pumping wavelength ( ∼ 500 nm), near the Si-NC emission ( ∼ 800 nm) and near the a-SiOxEr emission ( ∼ 1550 nm) enhancing the optical pumping process.
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61.72.up Other materials
61.46.Bc Structure of clusters (e.g., metcars; not fragments of crystals; free or loosely aggregated or loosely attached to a substrate)
81.40.Gh Other heat and thermomechanical treatments
81.16.-c Methods of micro- and nanofabrication and processing
68.55.aj Insulators
81.15.Cd Deposition by sputtering

190 nm excimer laser drilling of glass slices: Dependence of drilling rate and via hole shape on the diameter of the via hole

K. H. Chen, Wenhsing Wu, Byung Hwan Chu, C. F. Lo, Jenshan Lin, Y. L. Wang, C. Y. Chang, S. J. Pearton, and F. Ren

J. Vac. Sci. Technol. B 27, L42 (2009); http://dx.doi.org/10.1116/1.3253389 (5 pages)

Online Publication Date: 18 November 2009

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The authors have investigated the effect of the via hole diameter on the laser drilling rate of glass as well as the shape of the drilled via holes. An ArF2 based 193 nm UV excimer laser was used in this study. The via holes with a diameter of 120 μm showed a 7.5°–9° angled, tapered side wall, and the drilling rate was relatively constant at around 17 μm/s. For the smaller via holes with diameters ranging from 30–80 μm, significantly different results were obtained due to laser reflection from the tapered side wall of the via hole leading to the drilling rate being slightly increased and via hole becoming conical in shape. For the smallest via holes with an entrance diameter of 10 μm, the resulting hole showed a very high aspect ratio, with a funnel shaped via hole and a significantly reduced drilling rate.
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42.62.Cf Industrial applications
81.20.Wk Machining, milling

Alloy liquid metal ion source for carbon focused ion beams

P. Mazarov, A. D. Wieck, L. Bischoff, and W. Pilz

J. Vac. Sci. Technol. B 27, L47 (2009); http://dx.doi.org/10.1116/1.3253471 (3 pages) | Cited 1 time

Online Publication Date: 18 November 2009

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A carbon-cerium alloy liquid metal ion source (LMIS) with unintentional aluminum content is presented for generating focused ion beams of carbon ions, as well as ionized clusters with sizes of 2, 4, and 8 atoms. Emission-current-dependent measurements were carried out for the mass spectra and energy spread of all species, but focused on the carbon monomer ions and clusters. The full width at half maximum of the energy distribution was determined to be 6.5 eV for the monomer carbon ion and 14 eV for the light clusters at an emission current of 5 μA. The source showed good beam performance when used with a mass-separated focused ion beam column. Applications to graphene structures, organic matter, and other carbon-containing materials are promising tasks for the new carbon-containing alloy LMIS.
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79.70.+q Field emission, ionization, evaporation, and desorption

Selective etching and polymer deposition on InP surface in reactive ion etching with a mixture of methane and hydrogen

Norio Yamamoto

J. Vac. Sci. Technol. B 27, L50 (2009); http://dx.doi.org/10.1116/1.3256228 (4 pages) | Cited 4 times

Online Publication Date: 18 November 2009

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In a reactive ion etching with a mixture of methane and hydrogen, the authors observed selectivity in an etched InP surface or polymeric surface in a wafer, on which SiO2 mask was patterned into a 2-μm-wide grating, when the hydrogen flow rate was 5 SCCM (SCCM denotes cubic centimeter per minute at STP) at a methane flow rate of 40 SCCM. The polymers deposited on the InP surface were increased when the width of the grating pattern was increased. The InP surface configuration, such as etching or polymer deposition selectivity in unpatterned or patterned surfaces, was found to vary with hydrogen flow rate. They consider this to result from hydrogen radicals diffusing from the mask to the window in the direction across the grating pattern. The window is then loaded with the hydrogen radicals to a concentration sufficient to etch InP in the patterned surface.
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81.65.Cf Surface cleaning, etching, patterning
61.41.+e Polymers, elastomers, and plastics
68.35.bg Semiconductors

Thermal stability of GeSbTe thin films deposited by layer-by-layer metalorganic chemical vapor deposition

Jun-Ku Ahn, Kyoung-Woo Park, Nak-Jin Seong, and Soon-Gil Yoon

J. Vac. Sci. Technol. B 27, L54 (2009); http://dx.doi.org/10.1116/1.3253472 (4 pages) | Cited 3 times

Online Publication Date: 30 November 2009

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The thermal stability of the GeSbTe (GST) films deposited by layer-by-layer metalorganic chemical vapor deposition on the planar TiAlN/Si and on trenches 120 nm in diameter and 500 nm deep (with aspect ratio of 4:1) was investigated under various annealing temperatures and durations in a nitrogen ambient atmosphere. The inhomogeneous distribution of the Ge and Sb elements in the as-grown GST layer was improved by a thermal treatment at 500 °C for 60 min in nitrogen ambient. The GST films annealed above 500 °C for 30 and 60 min were delaminated from the TiAlN electrode. Samples annealed at 700 °C for 1 min, above the melting temperature of the GST, show a decreased thickness, indicating that the GST films were thermally unstable. The as-grown films on trenches did not show a complete fill of the structure, whereas the trenches were more fully filled after a thermal treatment at 500 °C for 60 min.
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68.60.Dv Thermal stability; thermal effects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Cc Kinetics of defect formation and annealing
68.55.-a Thin film structure and morphology
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Investigation of the physical and electronic properties of indium doped zinc oxide nanofibers synthesized by electrospinning

A. F. Lotus, Y. C. Kang, R. D. Ramsier, and G. G. Chase

J. Vac. Sci. Technol. B 27, 2331 (2009); http://dx.doi.org/10.1116/1.3244588 (6 pages) | Cited 1 time

Online Publication Date: 22 October 2009

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Nanostructured metal oxides and particularly nanofiber based materials can provide significant advances for the miniaturization of electronic, optoelectronic, photonic, sensor, and energy conversion devices with enhanced performance based on their unique material properties. In this study, indium doped zinc oxide (IZO) nanofibers were synthesized by electrospinning. These nanofibers have diameters in the range 50–100 nm. The effects of indium addition on the structural, optical, and electrical properties of the zinc oxide nanofiber matrices were investigated. The IZO nanofibers undergo significant changes in their optical and electrical properties compared to undoped zinc oxide nanofibers.
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78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
73.63.-b Electronic transport in nanoscale materials and structures
81.16.-c Methods of micro- and nanofabrication and processing
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.05.Dz II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
78.40.Fy Semiconductors

Removing plasma-induced sidewall damage in GaN-based light-emitting diodes by annealing and wet chemical treatments

Y. Yang and X. A. Cao

J. Vac. Sci. Technol. B 27, 2337 (2009); http://dx.doi.org/10.1116/1.3244590 (5 pages)

Online Publication Date: 22 October 2009

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The effects of thermal annealing and wet chemical treatments on the electrical characteristics of GaN-based light emitting diodes (LEDs) integrated with a microhole array were studied. It was found that KOH can etch off the plasma-damaged materials, leading to a complete suppression of surface leakage currents. It, however, attacked metal contacts and compromised the forward turn-on characteristics. Thermal annealing removed damage in the near-surface bulk region, whereas (NH4)2S treatment only passivated surface states. Both methods produced a partial recovery of the electrical characteristics of the perforated LEDs. It has been found that a complete removal of plasma damage in the perforated LEDs can be realized by thermal annealing used in conjunction with sulfide passivation.
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85.60.Jb Light-emitting devices
81.05.Ea III-V semiconductors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.65.Rv Passivation

Damage evolution in GaN under MeV heavy ion implantation

Yuan Gao, Jianming Xue, Dongzheng Zhang, Zilong Wang, Chune Lan, Sha Yan, Yugang Wang, Fujun Xu, Bo Shen, and Yanwen Zhang

J. Vac. Sci. Technol. B 27, 2342 (2009); http://dx.doi.org/10.1116/1.3244591 (5 pages) | Cited 1 time

Online Publication Date: 22 October 2009

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Damage evaluation processes in patterned GaN implanted by 3 MeV Au2+ ions were investigated as a function of ion fluences and annealing temperatures. Surface swelling was observed by using atomic force microscopy and the results showed that the swelling height depends on ion fluence and annealing temperature. The authors observed four-stage implantation-induced damage evolution including point-defect formation, defect clustering, amorphization/bubble formation, and eventually, decomposition. This evolution is contributed to irradiation-induced defect production and defect migration/accumulation occurred at different levels of displacement per atom. Craterlike holes were observed on the surface of GaN implanted at the ion fluence of 2×1016 cm−2, which is evidence of N loss, and broken bubbles formed during implantation.
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61.72.uj III-V and II-VI semiconductors
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.Cc Kinetics of defect formation and annealing
61.80.Jh Ion radiation effects
68.37.Ps Atomic force microscopy (AFM)
61.72.J- Point defects and defect clusters

Focused-ion beam fabrication of nanometer orifices for leak detection

G. Firpo, L. Repetto, F. Buatier de Mongeot, and U. Valbusa

J. Vac. Sci. Technol. B 27, 2347 (2009); http://dx.doi.org/10.1116/1.3243229 (4 pages)

Online Publication Date: 30 October 2009

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The leak devices most frequently used to calibrate leak-detection instruments are permeation leaks. These devices are very sensitive to temperature and can only be used with helium. The physical-leak types that could overcome this limits are prone to clog and their minimum size (about 1 μm) limits their applicability in the lowest flow range. Here, the authors propose a fabrication technique by means of focused-ion beam with which, in suitable materials, they are able to produce nanometer orifices. These devices [ Università degli Studi di Genova, Italian Patent No., TO2008A000683 (18 September 2008) ] work in the molecular-flow regime up to atmospheric pressure and do not clog. Other advantageous characteristics are the possibility of obtaining leak rates in the range equal to those of the permeation type and the linear dependence of the throughput on the inlet pressure.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems
07.30.Hd Vacuum testing methods; leak detectors
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
47.85.Np Fluidics
47.45.Dt Free molecular flows

HBr based inductively coupled plasma etching of high aspect ratio nanoscale trenches in InP: Considerations for photonic applications

N. Sultana, Wei Zhou, Tim P. LaFave, and Duncan L. MacFarlane

J. Vac. Sci. Technol. B 27, 2351 (2009); http://dx.doi.org/10.1116/1.3250263 (6 pages) | Cited 1 time

Online Publication Date: 30 October 2009

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Pure HBr based inductively coupled plasma vertical, anisotropic etching provides high aspect ratio (20–40) nanoscale trenches in InP at 165 °C processing temperatures. Since these temperatures are comparatively lower than chlorine based chemistries, HBr should yield improved device reliability. In addition to temperature dependence, other important considerations for integrated photonic applications are discussed. The phenomenon of aspect ratio dependent etching, or reactive ion etching lag, begins to manifest itself when the etch aspect ratio of InP approaches 30:1. No microloading effect is observed in the 100 nm scale trench etching. Physical etch dominates the etching mechanism in this regime, and acceptably smooth, 20 nm rms surface roughness is observed.
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52.77.Bn Etching and cleaning
81.65.Cf Surface cleaning, etching, patterning
68.35.bg Semiconductors

Measuring interface electrostatic potential and surface charge in a scanning electron microscope

I. Sychugov, Y. Nakayama, and K. Mitsuishi

J. Vac. Sci. Technol. B 27, 2357 (2009); http://dx.doi.org/10.1116/1.3253475 (4 pages)

Online Publication Date: 30 October 2009

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A novel method for electrostatic potential measurements at the interface is described. It involves placing a two-dimensional grid below the sample and observing it in a scanning electron microscope. Primary electron beam displacement, caused by surface charges, can be then measured for every grid knot. Using geometric parameters of the setup, a quantitative mapping of the potential can be extracted. It is shown that this method can achieve a tens of millivolt sensitivity and a submicron spatial resolution in electrostatic potential measurements.
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73.40.-c Electronic transport in interface structures
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Selective dry etching of attenuated phase-shift mask materials for extreme ultraviolet lithography using inductively coupled plasmas

H. Y. Jung, Y. R. Park, H. J. Lee, N.-E. Lee, C. Y. Jeong, and Jinho Ahn

J. Vac. Sci. Technol. B 27, 2361 (2009); http://dx.doi.org/10.1116/1.3253532 (5 pages) | Cited 4 times

Online Publication Date: 5 November 2009

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Among the core extreme ultraviolet lithography (EUVL) technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration from that of conventional photolithography. This study investigated the etching properties of attenuated phase-shift mask materials for EUVL, such as TaN (attenuator layer), Al2O3 (spacer), Mo (phase shifting layer), Ru (buffer/capping/etch-stop layer), and Mo–Si multilayer (reflective layer) by varying the Cl2/Ar gas flow ratio, dc self-bias voltage (Vdc), and etch time in inductively coupled plasmas. For the fabrication of the attenuated EUVL mask structure proposed herein, the TaN, Al2O3, and Mo layers need to be etched with no loss of the Ru layer on the Mo–Si multilayer. The TaN and Al2O3 layers were able to be etched in BCl3/Cl2/Ar plasmas with a Vdc of −100 V and the Mo layer was etched with an infinitely high etch selectivity over the Ru etch-stop layer in a Cl2/Ar plasma with a Vdc of −25 V even with increasing overetch time.
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81.65.Cf Surface cleaning, etching, patterning
52.77.Bn Etching and cleaning
85.40.Hp Lithography, masks and pattern transfer

Electrical characteristics of thin boron carbonitride films on Ge(100) and Si(100)

P. R. Fitzpatrick and J. G. Ekerdt

J. Vac. Sci. Technol. B 27, 2366 (2009); http://dx.doi.org/10.1116/1.3253534 (9 pages)

Online Publication Date: 5 November 2009

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Metal insulator semiconductor structures were fabricated from n-Si(100) and n-Ge(100) wafers passivated with thin (4.5–5 nm) films of N-rich BCxNy (0.09 ≤ x ≤ 0.15, 0.38 ≤ y ≤ 0.52) and with atomic layer deposition HfO2 (10 nm) as the gate dielectric. C-V and I-V characteristics of devices with BCxNy films grown at 275–400 °C by chemical vapor deposition showed that lower deposition temperatures resulted in improved electrical characteristics, including decreased hysteresis, lower VFB shift, lower leakage current, and less C-V stretch out. The electrical improvement is attributed to decreased bulk and interfacial defects in lower temperature deposited BCxNy films, which also had a higher optical bandgap [Eg = 3.55 eV at 275 °C on Ge(100)], lower subbandgap absorption, lower index of refraction [n(633 nm) = 1.84 at 275 °C on Ge(100)], reduced O uptake during ambient exposure, and increased percentage of B. Even for the lowest growth temperature studied (275 °C), BCxNy-passivated Ge(100) devices had considerable hysteresis (1.05 V), and electrical characteristics worsened after a postmetallization anneal. BCxNy-passivated Si(100) devices outperformed similar Ge(100) devices likely due to the higher interface state densities at the BCxNy–Ge(100) interface associated with the higher relative inertness of Ge(100) to thermal nitridation. C-rich BC0.61N0.08 films were also investigated but large amounts of hysteresis and fixed negative charge motivated the abandonment of these films.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ey III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.Rv Passivation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.72.Cc Kinetics of defect formation and annealing

Study of low temperature growth of III-V alloys for transparent layers

L. Wu, S. Iyer, J. Li, K. Gibson, J. Reppert, A. M. Rao, K. Matney, and J. Lewis

J. Vac. Sci. Technol. B 27, 2375 (2009); http://dx.doi.org/10.1116/1.3253605 (9 pages)

Online Publication Date: 5 November 2009

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The authors report on the successful growth of wide band gap III-V alloy systems on glass substrates at low growth temperatures that may be suitably exploited for the realization of novel high performance and stable optoelectronic devices. A systematic investigation on the growth of GaAs, GaAlAs(N), and AlAs(N) at low temperatures (<300 °C) on various substrates has been carried out to determine the effects of constituent elements of the alloy and the growth process parameters on the surface morphology and structural and optical properties of the materials. Optimized growth conditions were thus established for the successful growth of GaAlAsN polycrystalline layers with an average transmission of 80% in the visible region, with optical absorption energy >3.0 eV. The surface exhibited meandering cracks, with root mean square roughness of about 1 nm in the smooth areas between the cracks. Peaks observed in the x-ray diffraction and Raman spectra of these layers were relatively sharp in comparison to the other unoptimized quaternary layers, clearly attesting to the better quality of these layers. In addition, these layers exhibit preferential Al–N bond formation as evidenced in the corresponding Raman spectra.
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68.55.ag Semiconductors
68.60.Bs Mechanical and acoustical properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.40.Fy Semiconductors
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors

Influence of sputtering a ZnMgO window layer on the interface and bulk properties of Cu(In,Ga)Se2 solar cells

Jian V. Li, Xiaonan Li, Yanfa Yan, Chun-Sheng Jiang, Wyatt K. Metzger, Ingrid L. Repins, Miguel A. Contreras, and Dean H. Levi

J. Vac. Sci. Technol. B 27, 2384 (2009); http://dx.doi.org/10.1116/1.3256230 (6 pages)

Online Publication Date: 5 November 2009

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The authors studied the influence of sputtering a ZnMgO window layer for Cu(In,Ga)Se2 solar cells on bulk and interface electrical properties. Admittance spectroscopy reveals deep levels at the ZnMgO/CdS interface whose activation energy ( ∼ 0.4 eV) increases with reverse bias, indicating an unpinned quasi-Fermi level at the interface. The Cu(In,Ga)Se2 carrier concentration determined by capacitance-voltage measurements decreases to 3×1014 cm−3, compared to 1×1016 cm−3 in a device with a ZnO window. Scanning Kelvin probe force microscopy verifies the increased depletion region width and indicates that the junction location is unaltered by ZnMgO. Secondary-ion mass spectroscopy shows the presence of Mg near the top and bottom surfaces of the Cu(In,Ga)Se2 film. They hypothesize that the decrease in carrier concentration is due to compensation doping of the Cu-poor Cu(In,Ga)Se2 by Mg. Optimizing sputtering conditions to reduce surface damage and Mg migration eliminates the interface states and restores the carrier concentration, resulting in device performance comparable to those with a ZnO window.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
71.20.Nr Semiconductor compounds
71.55.Ht Other nonmetals
61.72.up Other materials
73.20.At Surface states, band structure, electron density of states

Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al2O3 gate dielectric

Domingo I. Garcia-Gutierrez, Davood Shahrjerdi, Vidya Kaushik, and Sanjay K. Banerjee

J. Vac. Sci. Technol. B 27, 2390 (2009); http://dx.doi.org/10.1116/1.3256229 (6 pages) | Cited 5 times

Online Publication Date: 10 November 2009

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The authors present experimental evidence on the impact of three different chemical surface treatments on the interface between the GaAs substrate and the aluminum oxide dielectric layer used in the fabrication of metal-oxide-semiconductor capacitors. The three different chemical surface treatments studied prior to atomic layer deposition (ALD) of the dielectric layer include (a) GaAs native oxide removal in a dilute HF solution only, (b) HF etch followed by a NH4OH treatment, and (c) HF etch followed by a (NH4)2S treatment. Moreover, interfacial self-cleaning of nontreated GaAs wafers upon ALD of aluminum oxide using trimethyl aluminum precursor was examined. Transmission electron microscopy, electron energy loss spectroscopy (EELS) and capacitance-voltage (C-V) data showed slight differences among the nontreated, HF-only, and NH4OH treated samples. However the (NH4)2S treated sample showed improved capacitance-voltage characteristics as well as an improved aluminum oxide/GaAs interface compared to the other three samples. Additionally, the characteristic oxygen K EELS peak suggests the presence of a thin additional layer close to the center of the high-κ layer containing oxygen, tantalum, and aluminum, as a consequence of probable plasma damage to the high-κ layer during the TaN metal gate deposition.
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84.32.Tt Capacitors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.37.Lp Transmission electron microscopy (TEM)
81.65.Cf Surface cleaning, etching, patterning

Influence of proton irradiation on the structure and stability of poly(dimethylsiloxane) and poly(dimethylsiloxane)-nanodiamond composite

V. Borjanović, L. Bistričić, I. Vlasov, K. Furić, I. Zamboni, M. Jakšić, and O. Shenderova

J. Vac. Sci. Technol. B 27, 2396 (2009); http://dx.doi.org/10.1116/1.3258156 (8 pages) | Cited 1 time

Online Publication Date: 10 November 2009

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In the present study, pure poly(dimethylsiloxane) (PDMS) polymer and PDMS-detonation nanodiamond (PDMS-DND) composite with 1 wt. % of DND were irradiated under vacuum at room temperature with a 2 MeV proton beam with fluences in the 1013–1015 cm−2 range. Modification of the structures and properties of the pure polymer and the nanocomposite material were monitored as a function of proton fluence. Specifically, the vibrational dynamics of pure PDMS and PDMS-DND nanocomposites, both unirradiated and irradiated samples, were investigated using Raman and Fourier transform infrared spectroscopy (FTIR). The Raman and FTIR spectra of the PDMS and PDMS-DND composites exhibit an overall reduction in intensity of all vibrational bands of the irradiated samples. The changes in relative intensities of the characteristic vibrational bands as a function of irradiation fluence indicate that cleavage of the backbone (Si–O–Si) PDMS chains was most pronounced. Importantly, structural degradation of PDMS-DND composites takes place at an order of magnitude higher fluence than for pure PDMS, indicating the potential of using DND-based polymer composites for application in high radiation environments. The appearance of strong photoluminescence following irradiation was more pronounced for PDMS-DND composites as compared to pure PDMS.
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61.80.Jh Ion radiation effects
61.41.+e Polymers, elastomers, and plastics
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
61.82.Rx Nanocrystalline materials
78.30.Jw Organic compounds, polymers
78.55.Kz Solid organic materials

Transport mechanism in aluminum nitride-metal multilayer junctions

A. Kabulski and D. Korakakis

J. Vac. Sci. Technol. B 27, 2404 (2009); http://dx.doi.org/10.1116/1.3258658 (4 pages) | Cited 1 time

Online Publication Date: 13 November 2009

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The electrical behavior of aluminum nitride (AlN) thin film structures consisting of alternating AlN and platinum (Pt) layers has been studied. Typical single layer AlN thin films are insulating due to the wide bandgap properties of the material, but stacked AlN–Pt structures can be conductive. Conductivity studies of the structures indicate regions of semiconductor behavior as well as regions where tunneling occurs. The thickness of the AlN layers, as well as the number of AlN–Pt interfaces in the structures, is found to impact the conduction and tunneling mechanism. Fowler–Nordheim theory and plots were used to determine trends in the electrical behavior and it was found that the field enhancement factor depends on the total thickness of the AlN layers, while the conduction mechanism, tunneling, or multistep hopping between midbandgap states, depends on the number of interfaces as well.
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73.40.Ns Metal-nonmetal contacts
72.20.Ee Mobility edges; hopping transport
73.40.Gk Tunneling
68.55.ag Semiconductors
72.80.Ey III-V and II-VI semiconductors
73.61.Ey III-V semiconductors

Simultaneous measurement of thermal conductivity and interface thermal conductance of diamond thin film

Byeonghee Lee, Joon Sik Lee, Sun Ung Kim, Kyeongtae Kim, Ohmyoung Kwon, Seungkoo Lee, Jong Hoon Kim, and Dae Soon Lim

J. Vac. Sci. Technol. B 27, 2408 (2009); http://dx.doi.org/10.1116/1.3259911 (5 pages)

Online Publication Date: 13 November 2009

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The authors developed an experimental method that can measure the in-plane thermal conductivity of a thin film and the interface thermal conductance between the film and the metal strip, simultaneously. This technique, the in-plane 3ω method, can be applied to the films with very high thermal conductivity such as diamond films. To guarantee the reliability of the measurement, the factors causing error were analyzed rigorously. Then, the method was demonstrated on silicon dioxide and silicon nitride films and was valid in experiments performed in the open atmosphere. They also applied the method on several chemical vapor deposited diamond films of different thicknesses and pretreatment methods. The data are comparable with those from previous researches.
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07.20.-n Thermal instruments and apparatus
68.60.Wm Other nonelectronic physical properties
66.70.Df Metals, alloys, and semiconductors

Hyperthermal atomic hydrogen and oxygen etching of vertically oriented graphene sheets

M. Bagge-Hansen, R. A. Outlaw, M. Y. Zhu, H. J. Chen, and D. M. Manos

J. Vac. Sci. Technol. B 27, 2413 (2009); http://dx.doi.org/10.1116/1.3263245 (7 pages) | Cited 1 time

Online Publication Date: 16 November 2009

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Carbon nanosheets have previously been shown to be promising high current field emission cathodes for a variety of potential applications. The vertically oriented planar sp2 carbon nanosheets grown by rf plasma-enhanced chemical vapor deposition terminate with one to seven graphene sheets and grow to ∼ 1 μm in height. High current field emission, Je ∼ 0.15 mA mm−2 (8 V μm−1), conducted within an ultrahigh vacuum system in a diode configuration in line-of-sight to a mass spectrometer, shows that CH4, CO2, and CO are generated as a result of cathode bombardment by hyperthermal oxygen and hydrogen neutrals and ions generated by electron stimulated desorption at the Cu anode. Confirmation of the mechanism was achieved by repeating the experiments using a Au anode. Simultaneous acquisition of I-V data and the partial pressures of reaction products in the mass spectrometer have shown repeatable, sustained CH4, CO2, and CO production. As these hyperthermal atomic hydrogen and oxygen species impinge on the sidewalls and edges of the carbon nanosheets, they bond to various sites throughout the sp2 carbon array. Progressively, as further hydrogen and oxygen arrive, CH4, CO2, and CO are formed and desorbed, thereby etching the film. Raman spectroscopy has confirmed a corresponding increase in defect sites (ID/IG increased from 0.57 to 0.81) over the test interval. Scanning electron microscopy cross sections of carbon nanosheet cathodes before and after high current lifetime testing (>200 h) show the average etching rate to be ∼ 1.7×10−3 nm/s.
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81.05.ue Graphene
61.48.Gh Structure of graphene
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
79.70.+q Field emission, ionization, evaporation, and desorption

Improving field-emission uniformity of large-area W18O49 nanowire films by electrical treatment

Z. L. Li, Fei Liu, N. S. Xu, Jun Chen, and S. Z. Deng

J. Vac. Sci. Technol. B 27, 2420 (2009); http://dx.doi.org/10.1116/1.3263257 (6 pages) | Cited 2 times

Online Publication Date: 16 November 2009

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W18O49 nanowires exhibit stable field emission at low fields. To explore the potential application of such nanowires in backlight and display devices, it is necessary to achieve uniform emission on a large area. In the present study, the authors demonstrate that field-emission uniformity of large-area samples may be improved by following an electrical-current treatment procedure. This is due to the increase in the number of nanowires that join in the field emission during the process, in which a small number of strong emitters are gradually melted down. The process of self-melting occurring in field emission is studied using a point anode in situ with a scanning electron microscope. The self-melting is attributed to the effect of Joule heating occurring due to passing of current through field electron emitting nanowires. These results are useful for the device application of W18O49 nanowires as large-area cold cathodes.
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79.70.+q Field emission, ionization, evaporation, and desorption
64.70.dj Melting of specific substances
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
85.45.Fd Field emission displays (FEDs)
81.07.Gf Nanowires

Concept and operation of Schottky emitter without suppressor electrode

A. K. Dokania and P. Kruit

J. Vac. Sci. Technol. B 27, 2426 (2009); http://dx.doi.org/10.1116/1.3258657 (6 pages)

Online Publication Date: 18 November 2009

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The Schottky electron emitter is the most frequently used electron source in electron microscopes. A suppressor electrode around the emitter is usually employed to prevent emission from the shank of the cathode. A concept of operating the Schottky emitter without the suppressor electrode is proposed with the aim of lowering the potential of the extractor electrode. Simulation results show that if the suppressor electrode is removed, then the same field as for the standard configuration can be obtained at the tip apex at an extraction voltage of 2265 V instead of 5000 V. The total emission from the shank region is calculated by estimating the emission area of the shank, taking into the account the different work functions of the crystal facets. The total emission for typical operating parameters is calculated to rise from 500 to 668 μA. The total emission from the shank and the filament of the Schottky emitter is measured experimentally in two different configurations, which match with the simulated results. The measured total emission of 450–750 μA confirms the idea that a Schottky emitter can be operated without suppressor, all the more so because the power at the extractor aperture is even reduced as a result of the lower acceleration voltage.
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73.30.+y Surface double layers, Schottky barriers, and work functions
85.45.Db Field emitters and arrays, cold electron emitters
79.70.+q Field emission, ionization, evaporation, and desorption

Thermodynamically stable nanotips of Au–Mo alloy

K. Nomura, T. Nagao, B. L. Cho, H. Katsuda, T. Matsumura, and C. Oshima

J. Vac. Sci. Technol. B 27, 2432 (2009); http://dx.doi.org/10.1116/1.3263248 (3 pages) | Cited 2 times

Online Publication Date: 18 November 2009

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The authors propose a simple new method for fabricating stable nanotips using sharpened Au–Mo alloy tips. By annealing at 1000–1200 K in UHV, Au atoms segregate to the alloy surface to form a Au film of one physical monolayer thickness, resulting in formation of nanopyramids on the (111) surface. Although field ion microscopy images of the nanotips show no single-atom termination similar to the previous cases of Au-deposited W nanotips, energy spectra of the emitted electrons strongly suggest the realization of a single-atom termination just after annealing.
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81.16.-c Methods of micro- and nanofabrication and processing
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.07.Bc Nanocrystalline materials
64.75.-g Phase equilibria
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems

Emission site density depending on surface area and morphology of nanotube film emitters

Huarong Liu, Shigeki Kato, and Yahachi Saito

J. Vac. Sci. Technol. B 27, 2435 (2009); http://dx.doi.org/10.1116/1.3264685 (4 pages)

Online Publication Date: 19 November 2009

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The influence of emitter surface morphology on emission site density (ESD) is investigated for carbon nanotube films. The authors show that the ESD varies with cathode-anode distance for rough surface emitters while it is almost invariant for smooth ones. In addition, it has been revealed that the ESD decreases with the increase in the film area, resulting in low emission current density for large-area films. The present study suggests that the high ESD is more important to achieve high emission current density and long lifetime for film emitters than the high field enhancement factor.
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79.70.+q Field emission, ionization, evaporation, and desorption
68.35.bt Other materials
81.07.De Nanotubes

Protein patterning on the micro- and nanoscale by thermal nanoimprint lithography on a new functionalized copolymer

S. Merino, A. Retolaza, V. Trabadelo, A. Cruz, P. Heredia, J. A. Alduncín, D. Mecerreyes, I. Fernández-Cuesta, X. Borrisé, and F. Pérez-Murano

J. Vac. Sci. Technol. B 27, 2439 (2009); http://dx.doi.org/10.1116/1.3264687 (5 pages) | Cited 1 time

Online Publication Date: 19 November 2009

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The localized depositions such as DNA or proteins at the micron or submicron scale on solids supports are a crucial step in the fabrication of advanced biochips and laboratory on chip devices. The present work shows a new approach: A new biofunctionalized copolymer based on 80% benzyl methacrylate and 20% succinimydil methacrylate is used as a printable polymer with a great affinity to proteins, leading to combined areas covered by proteins and areas with resistance to protein adsorption in the submicron scale. Based on this approximation, an immunoassay is proposed as a proof of concept to detect the presence of the rabbit IgG protein up to concentrations of 200 ng/ml.
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87.80.-y Biophysical techniques (research methods)
87.15.-v Biomolecules: structure and physical properties
87.14.E- Proteins

Carbon nanotube pillar structures for human neural cell culture

Jin Woo Lee, Kyong Soo Lee, Byeong Kwon Ju, Hyun Jin Cho, Nae Sung Lee, Min Young Kim, Eun Hye Kim, and Kyu Back Lee

J. Vac. Sci. Technol. B 27, 2444 (2009); http://dx.doi.org/10.1116/1.3264693 (5 pages)

Online Publication Date: 19 November 2009

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Human neuroblastoma cells were cultured and differentiated over patterned (dot, dash, and square pattern) pillar structures of multiwalled carbon nanotubes vertically grown on a SiO2 film-coated quartz substrate to observe cytoskeletal responses to the nanotube-based scaffold, especially filopodia activities. The cells over the square pattern formed a colony and showed short and thick filopodia protrusion as if the surface adhesion was unstable, whereas the cells over the dot or dash patterns showed long extensions of filopodia and unique serial branching onto the sidewall or over the tips of nanotube pillars. The results are important for the investigation of neural network regeneration using carbon nanotubes.
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87.85.jj Biocompatibility
87.85.Lf Tissue engineering
81.07.De Nanotubes

Fabrication of large-area gallium arsenide nanowires using silicon dioxide nanoparticle mask

Ding-Shin Wang, Jiun-Jie Chao, Shih-Che Hung, and Ching-Fuh Lin

J. Vac. Sci. Technol. B 27, 2449 (2009); http://dx.doi.org/10.1116/1.3265468 (4 pages) | Cited 1 time

Online Publication Date: 19 November 2009

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Large-area GaAs nanowires are fabricated using SiO2 nanoparticles as the etching mask. SiO2 nanoparticle monolayer is spin coated on the GaAs substrate. To obtain a uniform monolayer of SiO2 nanoparticles across the substrate, raised temperature, adequate solution concentration, and the substrate treated with a solvent for interface activation are required. With the monolayer of SiO2 nanoparticles as the etching mask, the GaAs substrate is etched by induced-coupled plasma reactive ion etcher (ICP-RIE) to form GaAs nanowires with a high aspect ratio. The diameter and length of GaAs nanowires are 70 nm and 1.2 μm, respectively. The diameter and length of GaAs nanowires can be controlled by the size of SiO2 nanoparticles and etching time of ICP-RIE.
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81.16.-c Methods of micro- and nanofabrication and processing
81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
81.07.Vb Quantum wires
68.65.La Quantum wires (patterned in quantum wells)

Growth of InSb epilayers and quantum wells on Ge(001) substrates by molecular beam epitaxy

M. C. Debnath, T. D. Mishima, M. B. Santos, K. Hossain, and O. W. Holland

J. Vac. Sci. Technol. B 27, 2453 (2009); http://dx.doi.org/10.1116/1.3258653 (4 pages) | Cited 2 times

Online Publication Date: 23 November 2009

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InSb epilayers and InSb/Al0.20In0.80Sb quantum well structures were grown on Ge(001) substrates by molecular beam epitaxy. Epilayers grown using a two-step process, which involved different temperatures, were characterized in situ using reflection high energy electron diffraction and studied ex situ using high-resolution x-ray diffraction, Nomarski optical microscopy, and Hall-effect measurements. The narrowest x-ray rocking curve width for 2.0- and 5.0-μm-thick InSb epilayers were 250 and 173 arc sec, respectively. Electron mobilities in the 5.0-μm-thick InSb epilayer and the InSb/Al0.20In0.80Sb single quantum well at room temperature were 34 500 and 8600 cm2/V s, respectively, which are the highest values for these films on Ge(001) substrates reported to date.
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68.55.ag Semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Inverted method for fabricating a nano-aperture device with subwavelength structures

A. Suutala, J. Olkkonen, D. C. Cox, J. Lappalainen, and H. Jantunen

J. Vac. Sci. Technol. B 27, 2457 (2009); http://dx.doi.org/10.1116/1.3263225 (5 pages)

Online Publication Date: 23 November 2009

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An inverted method for fabricating a plasmonic nanoaperture device by using focused ion beam (FIB) milling and focused electron beam (FEB) induced deposition is proposed here. The device structure presented consists of a periodic annulus grating pattern along the interface of a quartz substrate and sputtered aluminum layers and a cylindrical high-index filled nanoaperture through the aluminum film in the center of the grating. FIB milling was used to process the annulus pattern on the quartz substrate. A dielectric nanopost (or inverted nanoaperture) was fabricated by FEB-induced deposition using tetraethyl orthosilicate as a precursor. The device geometry was characterized by atomic force microscopy and scanning electron microscopy. The structural processability of the device was proven with adequate accuracy and the properties of the materials also met the conditions of the device model in terms of functionality.
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81.16.Rf Micro- and nanoscale pattern formation
81.15.Jj Ion and electron beam-assisted deposition; ion plating
73.22.Lp Collective excitations

Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x = 1 or 2)

Chen Chen, Rui Jia, Weilong Li, Haofeng Li, Tianchun Ye, Xinyu Liu, Ming Liu, Seiya Kasai, Hashizume Tamotsu, and Nanjian Wu

J. Vac. Sci. Technol. B 27, 2462 (2009); http://dx.doi.org/10.1116/1.3264482 (6 pages)

Online Publication Date: 25 November 2009

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In this article, a simple and flexible electron-beam coevaporation (EBCE) technique has been reported of fabrication of the silicon nanocrystals (Si NCs) and their application to the nonvolatile memory. For EBCE, the Si and SiOx(x = 1 or 2) were used as source materials. Transmission electron microscopy images and Raman spectra measurement verified the formation of the Si NCs. The average size and area density of the Si NCs can be adjusted by increasing the Si:O weight ratio in source material, which has a great impact on the crystalline volume fraction of the deposited film and on the charge storage characteristics of the Si NCs. A memory window as large as 6.6 V under ±8 V sweep voltage was observed for the metal-oxide-semiconductor capacitor structure with the embedded Si NCs.
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84.32.Tt Capacitors
85.30.Tv Field effect devices

Retention-failure mechanism of TaN/CuxO/Cu resistive memory with good data retention capability

H. J. Wan, P. Zhou, L. Ye, Y. Y. Lin, J. G. Wu, H. Wu, and M. H. Chi

J. Vac. Sci. Technol. B 27, 2468 (2009); http://dx.doi.org/10.1116/1.3264690 (4 pages) | Cited 2 times

Online Publication Date: 25 November 2009

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Data retention characteristics and a failure mechanism of TaN/CuxO/Cu resistive memory device are investigated by a temperature-accelerated test method. Data retention capability at 85 °C is sufficiently longer than 10 years by using two different methods: simple extrapolation and Arrhenius equation. The high resistance state fails to low resistance state and low resistance state fails to high resistance state at the elevated temperature. It is attributed that different retention-failure mechanisms are responsible for high resistance state and low resistance state, respectively. A filament/charge trapped combined model is presented to clarify the retention-failure mechanism.
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84.30.Sk Pulse and digital circuits
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
02.60.Ed Interpolation; curve fitting

High density plasma etching of titanium nitride metal gate electrodes for fully depleted silicon-on-insulator subthreshold transistor integration

Steven A. Vitale, Jakub Kedzierski, and Craig L. Keast

J. Vac. Sci. Technol. B 27, 2472 (2009); http://dx.doi.org/10.1116/1.3253533 (8 pages) | Cited 5 times

Online Publication Date: 30 November 2009

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Etching of TiN metal gate materials as a part of an integrated flow to fabricate fully depleted silicon-on-insulator ultralow-power transistors is reported. TiN etching is characterized as a function of source power, bias power, gas composition, and substrate temperature in a high density inductively coupled plasma reactor. Under the conditions used in this work, the TiN etch rate appears to be ion flux limited and exhibits a low ion enhanced etching activation energy of 0.033 eV. Notching of the polysilicon layer above the TiN may occur during the polysilicon overetch step as well as the TiN overetch step. Notching is not significantly affected by charging of the underlying gate dielectric under the conditions used. By optimizing the plasma etch process conditions, TiN:SiO2 selectivity of nearly 1000:1 is achieved, and a two-step TiN main etch and TiN overetch process yields well-defined metal gate structures without severe gate profile artifacts.
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81.65.Cf Surface cleaning, etching, patterning
52.77.Bn Etching and cleaning
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Photoresist removal using an O2/N2 medium pressure plasma jet with high speed wafer scanning: Unimplanted resist studies

M. Bhargava, B. Craver, Jose L. Torres, H. Guo, S. C. Vemula, A. K. Srivastava, I. Berry, and J. C. Wolfe

J. Vac. Sci. Technol. B 27, 2480 (2009); http://dx.doi.org/10.1116/1.3253476 (7 pages)

Online Publication Date: 1 December 2009

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The authors describe a plasma ashing system where a stationary jet of hot, activated gases removes photoresist from a scanning wafer. The jet is created by a reactant stream flowing through a 2.45 GHz surface wave discharge in a 6 mm quartz tube. For O2/N2 plasmas in the medium pressure range from 20 to 100 Torr, a luminous plasma jet emerges from the end of the discharge tube that transports both heat and reactive species to the wafer. A single scan results in a Gaussian track profile with a standard deviation of 7 mm for the source-to-substrate distance of 9 mm. A simple model of the ashing process, which assumes a thermally activated ash rate and Gaussian distributions for both power density and reactant flux, unifies the dependence of effective ash rate on the substrate temperature and scan speed at a constant power. The best fit activation energy at 2.5 kW is 0.23 eV, about half of the value found in conventional downstream ashing, implying that diffusion plays a significant role in limiting the ash rate. The peak thermal power density in a 2.5 kW jet at 80 Torr is 160 W/cm2, resulting in an effective instantaneous ash rate of 2.5 mm/min for a scan speed of 70 cm/s and 200 °C chuck temperature. This implies that the time to clear a 1.2 μm thick resist coating from a 300 mm wafer is 18 s.
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85.40.Hp Lithography, masks and pattern transfer
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Fabrication of oxidation-free contacts to nanopatterned Permalloy structures

Hye-Young Kim, Kang Ho Lee, Gyu-Tae Kim, Woun Kang, and Kyung-Jin Lee

J. Vac. Sci. Technol. B 27, 2487 (2009); http://dx.doi.org/10.1116/1.3263264 (3 pages)

Online Publication Date: 1 December 2009

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Abstract Unavailable
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81.16.Rf Micro- and nanoscale pattern formation
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
73.40.Cg Contact resistance, contact potential
75.50.Tt Fine-particle systems; nanocrystalline materials
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
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Erratum for: “IVNC Preface” [ J. Vac. Sci. Technol. B Volume 27, Issue 2, pp. 686–686 (2009) ]

Jan A. Dziuban

J. Vac. Sci. Technol. B 27, 2490 (2009); http://dx.doi.org/10.1116/1.3253387 (1 page)

Online Publication Date: 1 December 2009

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Abstract Unavailable
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99.10.Cd Errata
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Preface

Elizabeth Dobisz

J. Vac. Sci. Technol. B 27, 2502 (2009); http://dx.doi.org/10.1116/1.3269923 (1 page)

Online Publication Date: 1 December 2009

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Abstract Unavailable
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81.16.-c Methods of micro- and nanofabrication and processing
01.10.Fv Conferences, lectures, and institutes
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back to top E-Beam Lithography

Method for improving the aspect ratio of ultrahigh-resolution structures in negative electron-beam resist

V. A. Sidorkin, P. F. A. Alkemade, H. W. M. Salemink, R. Schmits, and E. van der Drift

J. Vac. Sci. Technol. B 27, 2503 (2009); http://dx.doi.org/10.1116/1.3263171 (5 pages)

Online Publication Date: 1 December 2009

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A method for improving the aspect ratio of ultrahigh-resolution structures in negative electron-beam resist is provided for enhanced pattern-transfer capabilities. The essence of the proposed method is to form a protective “cap” on top of the resist structure by means of electron-beam-induced deposition (EBID) in a self-aligned approach. This is implemented by a combination of electron-beam lithography and EBID during exposure of the resist material in the presence of a precursor gas. The results of the proposed method using hydrogen silsesquioxane resist material are presented and discussed, including various attempts to further optimize this method.
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85.40.Hp Lithography, masks and pattern transfer
42.82.Cr Fabrication techniques; lithography, pattern transfer
81.16.Rf Micro- and nanoscale pattern formation

Patterning decomposable polynorbornene with electron beam lithography to create nanochannels

Nicole R. Devlin, Devin K. Brown, and Paul A. Kohl

J. Vac. Sci. Technol. B 27, 2508 (2009); http://dx.doi.org/10.1116/1.3264658 (4 pages) | Cited 4 times

Online Publication Date: 1 December 2009

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Unity® 4671E sacrificial material is a decomposable negative tone polymer sensitive to ultraviolet radiation. In this study, it is shown that Unity® 4671E can also be patterned by electron beam lithography. Nanochannels with a width of 65 nm and a pitch of 200 nm have been fabricated. The developed Unity® 4671E patterns can thermally decompose and the products can permeate through the encapsulating material leaving nanocavities. This direct write electron-beam process has fewer processing steps than other published fabrication methods.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
61.41.+e Polymers, elastomers, and plastics
61.46.-w Structure of nanoscale materials
81.16.Rf Micro- and nanoscale pattern formation
81.16.Be Chemical synthesis methods
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Study on line edge roughness for electron beam acceleration voltages from 50 to 5 kV

D. Rio, C. Constancias, M. Saied, B. Icard, and L. Pain

J. Vac. Sci. Technol. B 27, 2512 (2009); http://dx.doi.org/10.1116/1.3253650 (6 pages) | Cited 3 times

Online Publication Date: 1 December 2009

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Electrical characteristics of devices depend on the line edge roughness (LER). LER contributes to the off-state leakage budget and short-channel effect. Therefore, it has to be controlled during the lithography step since it strongly impacts the final component’s roughness. This work aims at the characterization of LER dependence on the beam acceleration voltage. Usually publications consider many lithography parameters that can influence LER. Different resists were exposed to beam acceleration voltage from 5 to 50 kV. Thus, only two parameters that influence LER varied during experiments for a given resist: the exposure dose (i.e., shot noise) and the spot size. Then, simulations were carried out with those parameter variations. The impact of other LER contributors was considered as constant. Comparison between model and experimental results allows one to link resist sensitivity, exposure time, and LER.
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85.40.Hp Lithography, masks and pattern transfer
85.40.Qx Microcircuit quality, noise, performance, and failure analysis

Evaluation of each electron beam and exposure results with four column cells in multicolumn e-beam exposure system

Akio Yamada, Hiroshi Yasuda, and Masaki Yamabe

J. Vac. Sci. Technol. B 27, 2518 (2009); http://dx.doi.org/10.1116/1.3253614 (6 pages) | Cited 2 times

Online Publication Date: 1 December 2009

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In the Mask D2I project at ASET, the authors assembled an electron beam exposure system to prove the concept of the multicolumn cell with character projection capability. They performed beam calibrations in individual column cell to evaluate beams after character deflections. They measured the impacts on beam positions in one column cell caused by deflections in other column cells and concluded that there were no deflection impacts on beam positions from neighboring column cells in the multicolumn cell system. They also evaluated stitching errors of the patterns exposed by different column cells. Present stitching errors of the patterns between the different column cells were estimated to be less than 20 nm.
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61.80.Fe Electron and positron radiation effects
41.75.Fr Electron and positron beams
85.40.Hp Lithography, masks and pattern transfer

Reversible shape changes of the end facet on Schottky electron emitters

M. S. Bronsgeest and P. Kruit

J. Vac. Sci. Technol. B 27, 2524 (2009); http://dx.doi.org/10.1116/1.3237145 (8 pages) | Cited 2 times

Online Publication Date: 1 December 2009

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The Schottky electron source is predominant in today’s focused electron-beam equipment, but its properties are still not fully understood. Generally, its performance is predicted, assuming its tip end geometry is known and stable. In this work, it is shown that the size of the end facet (slowly) shrinks upon reduction in the extraction voltage and (more rapidly) grows upon restoration of the original voltage. Furthermore, the shape of the end facet could be made to change from more circular to octagonal or more squarish. These changes affect the properties of the beamlet that will be cut from the facet beam for practical applications. Better knowledge of the in situ shape of the emitter allows for a better prediction of its performance and stability.
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29.25.Bx Electron sources
79.20.Kz Other electron-impact emission phenomena
07.77.Ka Charged-particle beam sources and detectors

Design for electron beam: A novel approach to electron beam direct writing throughput enhancement for volume production

Takashi Maruyama, Yasuhide Machida, Shinji Sugatani, Haruo Tsuchikawa, Hiromi Hoshino, Masaru Ito, Haruyuki Tago, Larry L. Chau, Shone Lee, and Hideaki Komami

J. Vac. Sci. Technol. B 27, 2532 (2009); http://dx.doi.org/10.1116/1.3253544 (5 pages) | Cited 2 times

Online Publication Date: 1 December 2009

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The ordinal shot count reduction in the character projection based electron beam (EB) maskless lithography is done by the recognition of the repeatability of physical design data. Nevertheless, the reduction efficiency is limited to around four times. The new concept of design for electron beam enables a much higher shot count reduction rate of more than ten times and enables a drastic throughput enhancement. Using this method, the authors created an EB friendly design layout data by tracing back to upstream design flow and this is the most characteristic feature of this methodology.
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85.40.Hp Lithography, masks and pattern transfer

Self-powered near field electron lithography

Yuerui Lu, Norimasa Yoshimizu, and Amit Lal

J. Vac. Sci. Technol. B 27, 2537 (2009); http://dx.doi.org/10.1116/1.3253545 (5 pages) | Cited 2 times

Online Publication Date: 1 December 2009

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Electron beam exposure is the tool of choice for highest resolution lithography but suffers from the low throughput during serial beam writing [ T. Ito and S. Okazaki, Nature (London) 406, 1027 (2000) ; R. F. Pease and S. Y. Chou, Proc. IEEE 96, 248 (2008) ]. The authors designed and developed a low-cost self-powered near-field electron lithography (SPEL) technique, which utilizes the spontaneously emitted energetic electrons from beta-emitting radioisotope thin films. This approach enables massively parallel e-beam lithography, with potentially arbitrarily large concurrently exposed surface area, controlled by the size of the radioactive source. This method potentially eliminates the need for vacuum systems and the electron focusing column as needed in the existing electron beam lithography systems. This will greatly simplify the overall lithographic system and reduce the cost of deep-subnanometer lithography. In SPEL system, emitted electrons are spatially blocked using a nanostenciled micromachined mask that is placed in proximity to an electron sensitive resist on the silicon substrate (Fig. 1). The electrons that are not blocked, impact and enter the e-beam resist, along with secondary electrons generated by primary electrons impacting the sidewalls of the stencil layer. Using three-dimensional 3D Monte Carlo (MC) simulations of electron paths, the authors show that the critical dimension (CD) in the system could be down to 20 nm with 14.9 keV electrons emitted from math. The 3D MC simulation considered both elastic scattering and inelastic scattering for the high energetic primary electrons as well as the cascade secondary electrons generated. The 20 nm limit is imposed by the secondary emission scattering. In order to prove the concept, experiments were conducted using the safe and low-activity (1 mCi/cm2) beta particle emitting math thin film source with electrons emitted at an average energy of 14.9 keV. They exposed negative tone resist NEB31A, and a minimum gap between ebeam resist posts or CD of 100 nm was achieved. The secondary electrons generated by the primary electron impact onto mask are also useful for exposure. Compared to traditional electron beam lithography, with serial raster scanning taking days to expose a wafer, the lithography system will enable parallel exposure of large patterns on arbitrarily large wafers in several minutes. SPEL may enable massively parallel top-down approach to realizing nanostructures in bulk quantities.
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85.40.Hp Lithography, masks and pattern transfer
81.16.Nd Micro- and nanolithography
42.82.Cr Fabrication techniques; lithography, pattern transfer

Microcolumn design for a large scan field and pixel number

H. Weigand, S. Gautsch, W. Strohmaier, M. Fleischer, U. Staufer, N. F. de Rooij, and D. P. Kern

J. Vac. Sci. Technol. B 27, 2542 (2009); http://dx.doi.org/10.1116/1.3256265 (5 pages) | Cited 4 times

Online Publication Date: 1 December 2009

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A different approach in microcolumn design is presented, aiming at a large number of pixels at minimal probe size for the deflected beam. An optimization routine resulted in a seven times magnifying column featuring a more than 7×7 mm2 scan field at 40 mm working distance. Simulations for 1 keV electrons from a field emission source predict an increase in beam size from 85 nm on axis up to only about 200 nm for a beam deflected 3 mm off axis. Within a 1 mm scan field this microcolumn could address over 100 Mpixels of less than 100 nm in size. Tests of this design using the 130 nm electron probe of a scanning electron microscope as the electron source resulted in a beam size of ∼ 930 nm on axis up to ∼ 1000 nm for a beam deflected 3 mm off axis.
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07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Off-axis emission properties for the extended Schottky electron source

K. Liu, G. A. Schwind, and L. W. Swanson

J. Vac. Sci. Technol. B 27, 2547 (2009); http://dx.doi.org/10.1116/1.3259954 (6 pages) | Cited 1 time

Online Publication Date: 1 December 2009

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The total energy distribution (TED) and reduced brightness from the ZrO/W(100) Schottky electron source are extended to positions 4.4° off of the optical axis of the emitter. The faceted nature of the stable end form precludes a monotonic variation in emission properties with the beam angle. Both the full width at half maximum of the TED and the reduced brightness of the source increase by 37% and 18%, respectively, at an off-axis beam angle, consistent with the facet edge of the emitting (100) plane and at a constant current angular density of 0.5 mA/sr and 1800 K source temperature. Similarly, the angular magnification and work function increase by 27% and 6%, respectively, as the beam angle increases from 0° to the facet edge at 4.4°.
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29.25.Bx Electron sources
73.30.+y Surface double layers, Schottky barriers, and work functions

Method of improving the quality of nanopatterning in atomic image projection electron-beam lithography

Hyun-Mi Kim, Min Hyun Lee, Hyo-Sung Lee, Jung-Sub Wi, Kipil Lim, and Ki-Bum Kim

J. Vac. Sci. Technol. B 27, 2553 (2009); http://dx.doi.org/10.1116/1.3250262 (5 pages) | Cited 2 times

Online Publication Date: 1 December 2009

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The authors demonstrated successful nanopatterning using a high resolution lattice image obtained by transmission electron microscopy (TEM) as a mask signal [ H. S. Lee et al., Adv. Mater. (Weinheim, Ger.) 19, 4198 (2007) ]. In this process, the quality of the patterning result is critically dependent on the lattice image, which, in turn, is critically dependent on the quality of the mask. It is often noted that the quality of the mask prepared by the conventional TEM sample preparation technique is far from perfect, which critically limits the quality of patterning. In this work, they first discuss the various origins of the noise signal generated by the mask and then introduce a special type of objective aperture (noise reduction aperture) to remove the noise signal. The effect of the noise reduction aperture, designed for the Si [110] zone axis, is experimentally demonstrated.
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81.16.Rf Micro- and nanoscale pattern formation
81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
68.37.Lp Transmission electron microscopy (TEM)

Amino-propyl-triethoxy-silane on aluminum fiducial grids for spatial-phase-locked electron-beam lithography

C. B. Samantaray and J. T. Hastings

J. Vac. Sci. Technol. B 27, 2558 (2009); http://dx.doi.org/10.1116/1.3259960 (5 pages) | Cited 2 times

Online Publication Date: 1 December 2009

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A new fiducial grid suitable for low-energy (1–5 keV) spatial-phase locked electron-beam lithography (SPLEBL) has been developed based on an aluminum layer with an organosilane grid pattern. The grids (400 nm period) were made of two to three layers of 3-amino-propyl-triethoxy-silane (APTES) that was microcontact printed onto Al coated polymethyl methacrylate (PMMA). Signal-to-noise ratios (SNRs) were measured at beam energies ranging from 1 to 5 keV at a dose of 20 μC/cm2 and compared to the SNRs of octadecanethiol (ODT) based fiducial grids on Au, Ag, and Cu. Although fiducial grids made of ODT on Au provided excellent SNR, Au is not suitable because of poor penetration and strong scattering of the primary electrons. ODT based grids on lower atomic number metal such as Ag or Cu yielded inadequate SNRs. In contrast, APTES-based grids on Al provide SNRs approaching ODT on Au with greatly reduced electron scattering. The authors successfully developed a grid removal process that allows patterns to be resolved in the underlying PMMA. These results represent a key step in the development of low-energy SPLEBL.
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85.40.Hp Lithography, masks and pattern transfer
81.16.Nd Micro- and nanolithography
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Image processing using shape recognition for alignment to damaged registration marks in electron beam lithography

E. Kratschmer, D. P. Klaus, R. Viswanathan, M. L. Turnidge, P. L. Reed, and B. McPhail

J. Vac. Sci. Technol. B 27, 2563 (2009); http://dx.doi.org/10.1116/1.3237099 (6 pages) | Cited 1 time

Online Publication Date: 1 December 2009

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Shape locate mark registration, a novel image processing technique to accurately locate even damaged registration marks, has been used to resolve alignment challenges in aggressively scaled lithography levels for sub-32 nm complementary metal oxide semiconductor devices. The achievable overlay using traditional registration hardware and software is ultimately limited by the quality of the registration marks and any changes in the registration mark signals caused by device process steps between overlay critical exposure levels. This article discusses the details in the shape locate mark registration and results achieved for the device program. The shape locate mark registration system has been implemented and tested on a Vistec VB6 electron beam lithography tool. Mark locate repeatabilities of better than 5 nm (3σ) across 200 mm wafers and better than 10 nm overlay for device lithography have been demonstrated. Highly scaled 22 nm node fin field effect transistor (FinFET) static random access memory cells of area down to 0.099 μm2 were fabricated using all e-beam lithography and shape locate registration to demonstrate the scalability of FinFET technology ( Kawasaki et al., Tech. Dig. – Int. Electron. Devices Meet, 2008, p. 237 ).
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85.40.Hp Lithography, masks and pattern transfer
85.30.Tv Field effect devices
42.30.Sy Pattern recognition
42.30.Va Image forming and processing

Nanoscale geometry assisted proximity effect correction for electron beam direct write nanolithography

L. E. Ocola

J. Vac. Sci. Technol. B 27, 2569 (2009); http://dx.doi.org/10.1116/1.3237135 (3 pages) | Cited 3 times

Online Publication Date: 1 December 2009

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Nanoscale geometry assisted proximity effect correction is presented for nanoscale structures and the results clearly show improvements in feature sharpness down to 20 nm structures. The design rule is simple to implement onto existing PEC software and enables implementation of PEC down to the resolution limits of electron beam lithography.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer

Application of neural network to controlling three-dimensional electron-beam exposure distribution in resist

C. Guo, S.-Y. Lee, S. H. Lee, B.-G. Kim, and H.-K. Cho

J. Vac. Sci. Technol. B 27, 2572 (2009); http://dx.doi.org/10.1116/1.3259959 (8 pages)

Online Publication Date: 1 December 2009

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Electron-beam (e-beam) lithography is often employed for the fabrication of binary patterns with nanoscale features and grayscale structures. In such applications, exposure distribution along the depth dimension of the resist layer can significantly affect the geometry of the written patterns or structures. Most of the previous e-beam dose control schemes adopted a two-dimensional exposure model, ignoring the depth-dependent exposure variation. In this paper, a method which utilizes a neural network for explicitly controlling three-dimensional (3D) (vertical as well as lateral) distribution of exposure is described. A neural network allows one to achieve more balanced exposure distributions compared to a conventional region-by-region recursive approach. Through an extensive computer simulation, performance of the proposed approach to controlling (3D) exposure distribution has been analyzed in detail.
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85.40.Hp Lithography, masks and pattern transfer
84.35.+i Neural networks
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Spatial dose control for fabrication of saw-tooth structures

S.-Y. Lee, S. C. Jeon, J. S. Kim, K. N. Kim, M. S. Hyun, J. J. Yoo, and J. W. Kim

J. Vac. Sci. Technol. B 27, 2580 (2009); http://dx.doi.org/10.1116/1.3245988 (5 pages) | Cited 1 time

Online Publication Date: 1 December 2009

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Electron-beam (e-beam) lithography is often employed in the fabrication of three-dimensional structures, i.e., e-beam grayscale lithography where dose is spatially controlled such that the remaining resist profile is as close to the target structure as possible. The resist profile is determined by the developing rate distribution in the resist, which, in turn, depends on the exposure (energy deposited) distribution. In the past, a dose-to-depth relationship derived from experiments was referred to in determining a dose distribution for fabrication of a grayscale structure. However, the relationship is structure dependent since the exposure distribution depends on the dose distribution, i.e., exposure at each point is a function of doses at all points within the electron scattering range. Hence, a more general approach is to consider an exposure-to-depth relationship and dependency of the required exposure distribution on (the shape of) structure. In this study, such an approach has been investigated for saw-tooth structures with varying slope of tooth. Fabricated saw-tooth structures and analysis of slope dependency of the required exposure distribution are presented in this article.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems

Fabrication of high density, high-aspect-ratio polyimide nanofilters

Olga V. Makarova, Cha-Mei Tang, Platte Amstutz, Ralu Divan, Alexandra Imre, Derrick C. Mancini, Mark Hoffbauer, and Todd Williamson

J. Vac. Sci. Technol. B 27, 2585 (2009); http://dx.doi.org/10.1116/1.3242696 (3 pages) | Cited 2 times

Online Publication Date: 1 December 2009

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A novel fabrication process produces high porosity polymer nanofilters with smooth, uniform, and straight pores with high aspect ratios. The process utilizes electron beam lithography and energetic neutral atom beam lithography and epitaxy techniques. The method has the potential to produce a new generation of high-precision, very-high-porosity, biocompatible filters with pore sizes down to 100 nm.
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84.30.Vn Filters
81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
81.05.Rm Porous materials; granular materials

Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping

M. Guillorn, J. Chang, N. Fuller, J. Patel, M. Darnon, A. Pyzyna, E. Joseph, S. Engelmann, J. Ott, J. Newbury, D. Klaus, J. Bucchignano, P. Joshi, C. Scerbo, E. Kratschmer, et al.

J. Vac. Sci. Technol. B 27, 2588 (2009); http://dx.doi.org/10.1116/1.3246357 (5 pages) | Cited 2 times

Online Publication Date: 1 December 2009

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The authors report on a hybrid lithography process that integrates electron beam lithography (EBL) and optical photolithography. To maximize resolution and density, the EBL exposure is performed using a hydrogen silsesquioxane-based resist, while the photolithographic exposure is performed using standard positive or negative tone 248 nm photoresists. Both exposures take place on a common underlayer consisting of an antireflective coating (ARC). During pattern transfer into the ARC layer, a composite image of the two lithographic exposures is formed creating a robust and versatile etch mask for further pattern transfer into the substrate. They demonstrate the utility of this technique by using it to pattern the active, gate, and wiring levels of complementary metal oxide semiconductor devices and circuits consisting of trigated Fin-based field effect transistors. These devices have a minimum active area pitch of 50 nm, minimum gate pitch of 90 nm, and achieve densities suitable for 15 nm node static random access memory cells. Details of the exposure process and device fabrication are discussed along with electrical results from the resulting devices and circuits built using this technique.
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85.40.Hp Lithography, masks and pattern transfer
85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices
84.30.Sk Pulse and digital circuits

Cold-developed electron-beam-patterned ZEP 7000 for fabrication of 13 nm nickel zone plates

Julia Reinspach, Magnus Lindblom, Olov von Hofsten, Michael Bertilson, Hans M. Hertz, and Anders Holmberg

J. Vac. Sci. Technol. B 27, 2593 (2009); http://dx.doi.org/10.1116/1.3237140 (4 pages) | Cited 12 times

Online Publication Date: 1 December 2009

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Cold development was applied to improve the resolution in a trilayer resist that is used for the fabrication of state-of-the-art soft x-ray microscopy zone plates. By decreasing the temperature of the hexyl acetate developer to −50 °C, 11 nm half-pitch gratings have been resolved in the electron-beam resist ZEP 7000. 12 nm half-pitch gratings have been successfully transferred, via the intermediate SiO2 hardmask, into the bottom polyimide layer by CHF3 and O2 reactive ion etching. The trilayer resist, including optimized cold development, has finally been used in an electroplating-based process for the fabrication of nickel zone plates. Zone plates with down to 13 nm outermost zone width have been fabricated and 2.4% average groove diffraction efficiency has been measured for zone plates with 15 nm outermost zone width and a nickel height of 55 nm.
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42.79.Ci Filters, zone plates, and polarizers
42.82.Cr Fabrication techniques; lithography, pattern transfer
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors

Resist residues and transistor gate fabrication

D. S. Macintyre, O. Ignatova, S. Thoms, and I. G. Thayne

J. Vac. Sci. Technol. B 27, 2597 (2009); http://dx.doi.org/10.1116/1.3243176 (5 pages) | Cited 3 times

Online Publication Date: 1 December 2009

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In this article, the authors investigate the formation and removal of resist residues with the main objective to improve the reliability of transistor gate fabrication. Device performance is strongly dependent on the quality of metal contacts and the interface between gate metal and substrates. Reliable transistor fabrication becomes increasingly difficult as transistor dimensions shrink. Residual resist layers can become significant if wet or dry etching steps are required for gate recessing, e.g., for high electron mobility transistors or the removal of thin oxide layers in III-V metal oxide semiconductor field effect transistor fabrication. They observe two sorts of residual resist layers in polymethyl methacrylate (PMMA): exposed and nonexposed. Exposed residuals have been observed by many groups in electron beam exposed and developed regions of PMMA. In this article, they show that the observed granularity lies on top of a continuous residual film and consider this effect on gate fabrication. They also present evidence of a nonexposed residual layer observed in regions of unexposed resist which have been subject to a standard solvent based resist strip and cleaning procedure. They further demonstrate that CV measurement techniques can be used to detect the presence of residual layers of resist.
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85.30.Tv Field effect devices
85.40.Ls Metallization, contacts, interconnects; device isolation

Robust, efficient grating couplers for planar optical waveguides using no-photoacid generator SU-8 electron beam lithography

A. L. Bross, G. Lafyatis, R. Ayachitula, A. Morss, R. Hardman, and J. Golden

J. Vac. Sci. Technol. B 27, 2602 (2009); http://dx.doi.org/10.1116/1.3258153 (4 pages)

Online Publication Date: 1 December 2009

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450 nm pitch coupling gratings with greater than 10% input coupling efficiency have been fabricated on thin film planar optical waveguides using electron beam lithography on a novel SU-8 resist formulation that contains no photoacid generator (PAG). Even without the PAG component, we found the sensitivity of this material to be unexpectedly high, with a dose to clear of less than 10 μC/cm2 at 50kV for our substrates. Our optical waveguides consisted of 350 nm Ta2O5 ion beam sputtered onto superpolished fused silica substrates. The grating fabrication flow was designed to minimize process steps on the Ta2O5 surface and ensure that the original low surface roughness was sufficiently maintained after processing.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Dj Gratings
81.16.Nd Micro- and nanolithography
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
85.40.Hp Lithography, masks and pattern transfer

Hydrogen silsesquioxane double patterning process for 12 nm resolution x-ray zone plates

Weilun Chao, Jihoon Kim, Senajith Rekawa, Peter Fischer, and Erik Anderson

J. Vac. Sci. Technol. B 27, 2606 (2009); http://dx.doi.org/10.1116/1.3242694 (6 pages) | Cited 4 times

Online Publication Date: 1 December 2009

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Soft x-ray zone plate microscopy is a powerful nanoanalytic technique used for a wide variety of scientific and technological studies. Pushing its spatial resolution to 10 nm and below is highly desired and feasible due to the short wavelength of soft x rays. Instruments using Fresnel zone plate lenses achieve a spatial resolution approximately equal to the smallest, outermost zone width. In this work, a double patterning zone plate fabrication process is developed. based on a high resolution resist, hydrogen silsesquioxane (HSQ), to bypass the limitations of conventional single exposure fabrication to pattern density, such as finite beam size, scattering in resist, and modest intrinsic resist contrast. To fabricate HSQ structures with zone widths on the order of 10 nm on gold plating base, a surface conditioning process with (3-mercaptopropyl) trimethoxysilane, 3-MPT, is used, which forms a homogeneous hydroxylation surface on gold surface and provides good anchoring for the desired HSQ structures. Using the new HSQ double patterning process, coupled with an internally developed, subpixel alignment algorithm, the authors have successfully fabricated in-house gold zone plates of 12 nm outer zones. Promising results for 10 nm zone plates have also been obtained. With the 12 nm zone plates, they have achieved a resolution of 12 nm using the full-field soft x-ray microscope, XM-1.
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81.16.Rf Micro- and nanoscale pattern formation
81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
68.37.Yz X-ray microscopy
07.85.Tt X-ray microscopes

Simple technique for beam focusing in electron beam lithography on optically transparent substrates

Michael L. Schuette and Wu Lu

J. Vac. Sci. Technol. B 27, 2612 (2009); http://dx.doi.org/10.1116/1.3237102 (4 pages)

Online Publication Date: 1 December 2009

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A beam focusing technique is developed for electron beam lithography on transparent substrates wherein the substrate height is estimated as a plane calculated from height data measured from perimeter metal. The effectiveness of this method, which avoids problems associated with metal-on-resist coatings, is verified with pores and gratings in ZEP520A resist on 1×1 in.2 indium tin oxide/quartz slides and on 4 in. quartz wafers. Using a Vistec EBPG-5000 electron beam lithography tool at 50 keV, we achieved consistent 18 nm diameter pores at 59 nm pitch across 41 μm of substrate tilt without direct height measurements at the writing sites.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
42.79.Dj Gratings
41.85.Lc Particle beam focusing and bending magnets, wiggler magnets, and quadrupoles

Limiting factors in sub-10 nm scanning-electron-beam lithography

Bryan Cord, Joel Yang, Huigao Duan, David C. Joy, Joseph Klingfus, and Karl K. Berggren

J. Vac. Sci. Technol. B 27, 2616 (2009); http://dx.doi.org/10.1116/1.3253603 (6 pages) | Cited 14 times

Online Publication Date: 1 December 2009

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Achieving the highest possible resolution using scanning-electron-beam lithography (SEBL) has become an increasingly urgent problem in recent years, as advances in various nanotechnology applications [ F. S. Bates and G. H. Fredrickson, Annu. Rev. Phys. Chem. 41, 525 (1990) ; Black et al., IBM J. Res. Dev. 51, 605 (2007) ; Yang et al., J. Chem. Phys. 116, 5892 (2002) ] have driven demand for feature sizes well into the sub-10 nm domain, close to the resolution limit of the current generation of SEBL processes. In this work, the authors have used a combination of calculation, modeling, and experiment to investigate the relative effects of resist contrast, beam scattering, secondary electron generation, system spot size, and metrology limitations on SEBL process resolution. In the process of investigating all of these effects, they have also successfully yielded dense structures with a pitch of 12 nm at voltages as low as 10 keV.
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81.16.Nd Micro- and nanolithography

Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography

Joel K. W. Yang, Bryan Cord, Huigao Duan, Karl K. Berggren, Joseph Klingfus, Sung-Wook Nam, Ki-Bum Kim, and Michael J. Rooks

J. Vac. Sci. Technol. B 27, 2622 (2009); http://dx.doi.org/10.1116/1.3253652 (6 pages) | Cited 21 times

Online Publication Date: 2 December 2009

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The authors, demonstrated that 4.5-nm-half-pitch structures could be achieved using electron-beam lithography, followed by salty development. They also hypothesized a development mechanism for hydrogen silsesquioxane, wherein screening of the resist surface charge is crucial in achieving a high initial development rate, which might be a more accurate assessment of developer performance than developer contrast. Finally, they showed that with a high-development-rate process, a short duration development of 15 s was sufficient to resolve high-resolution structures in 15-nm-thick resist, while a longer development degraded the quality of the structures with no improvement in the resolution.
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85.40.Hp Lithography, masks and pattern transfer
81.16.Nd Micro- and nanolithography

Understanding the base development mechanism of hydrogen silsesquioxane

Jihoon Kim, Weilun Chao, Brian Griedel, Xiaogan Liang, Mark Lewis, Dawn Hilken, and Deirdre Olynick

J. Vac. Sci. Technol. B 27, 2628 (2009); http://dx.doi.org/10.1116/1.3250261 (7 pages) | Cited 5 times

Online Publication Date: 2 December 2009

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The authors study the dissolution mechanism of hydrogen silsesquioxane in base solutions with the addition of chloride salts to elucidate the development mechanism. The reaction mechanisms are proposed based on the dissolution mechanism of quartz. Development kinetics suggests two dose-dependent development mechanisms. Considering ion sizes, both hydrated and nonhydrated, and ion exchange, they propose that a combination of a surface dominated reaction at higher doses and a matrix dominated reaction at lower doses accounts for the high development contrast with a NaOH base/NaCl salt mixture. The interplay between the hydrated and the nonhydrated ion sizes leads to higher contrast developers, such as tetramethyl ammonium hydroxide with NaCl.
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82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)
64.75.Bc Solubility
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Contrast enhancement behavior of hydrogen silsesquioxane in a salty developer

Sung-Wook Nam, Michael J. Rooks, Joel K. W. Yang, Karl K. Berggren, Hyun-Mi Kim, Min-Hyun Lee, Ki-Bum Kim, Jae Hwan Sim, and Do Yeung Yoon

J. Vac. Sci. Technol. B 27, 2635 (2009); http://dx.doi.org/10.1116/1.3245991 (5 pages) | Cited 4 times

Online Publication Date: 2 December 2009

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The authors investigated a contrast enhancement behavior of hydrogen silsesquioxane (HSQ) in a salty development system (NaOH/NaCl). Time-resolved analysis of contrast curves and line-grating patterns were carried out to investigate the unique properties of a salty development process. In NaOH developer without salt, the development process was saturated beyond a certain development time. On the other hand, the addition of salt enabled a continuous development, which was not observed in the pure NaOH development. The continuous thinning process enhances the contrast of HSQ in the salty developer, which allows a fast collapsing behavior in HSQ line-grating patterns. During development process, salt seems to have the role of modifying HSQ by breaking network bonds preferentially, leading to a continuous development rate.
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85.40.Hp Lithography, masks and pattern transfer

Ultradense gold nanostructures fabricated using hydrogen silsesquioxane resist and applications for surface-enhanced Raman spectroscopy

Sookyung Choi, Minjun Yan, Ilesanmi Adesida, Keng H. Hsu, and Nicholas X. Fang

J. Vac. Sci. Technol. B 27, 2640 (2009); http://dx.doi.org/10.1116/1.3253610 (4 pages) | Cited 4 times

Online Publication Date: 2 December 2009

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Metal nanostructures have been routinely fabricated by lift-off process using electron-beam lithography. However, for ultradense structures, this method has been limited by metal film thickness with resulting poor pattern quality. The authors report an alternative approach for the fabrication of ultradense gold (Au) nanostructures using hydrogen silsesquioxane (HSQ). Due to the high resolution and excellent etch durability of HSQ resists, ultradense Au gratings with high quality were fabricated. As a promising application, they demonstrate that these structures can be applied to surface-enhanced Raman scattering (SERS) for bioanalysis. Ultradense Au structures fabricated using HSQ resists have proven to be a robust and effective SERS-active substrate.
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81.16.Nd Micro- and nanolithography
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
62.20.-x Mechanical properties of solids
81.07.Bc Nanocrystalline materials
81.65.Cf Surface cleaning, etching, patterning
68.60.Bs Mechanical and acoustical properties
68.55.jd Thickness
78.30.Er Solid metals and alloys
61.46.-w Structure of nanoscale materials
78.66.Bz Metals and metallic alloys

Apparatus to measure electron reflection

Juan R. Maldonado, Yun Sun, Roger Tsai, Fabian Pease, and Piero Pianetta

J. Vac. Sci. Technol. B 27, 2644 (2009); http://dx.doi.org/10.1116/1.3242695 (4 pages)

Online Publication Date: 2 December 2009

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Controlling reflection of electrons from an array of electrodes is a key feature of an electron lithography system currently under development. Here the authors describe a technique for characterizing this control. The apparatus is only 30 mm long, features simple colinear electron optics and a photocathode that emits a well-directed, monochromatic beam. The overall energy resolution is better than 1 eV.
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41.85.-p Beam optics
85.40.Hp Lithography, masks and pattern transfer
85.60.Ha Photomultipliers; phototubes and photocathodes
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Development and characterization of an iodine field emission ion source for focused ion beam applications

Timothy P. Fedkiw and Paulo C. Lozano

J. Vac. Sci. Technol. B 27, 2648 (2009); http://dx.doi.org/10.1116/1.3253604 (6 pages) | Cited 6 times

Online Publication Date: 2 December 2009

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Emission of positive and negative ions is possible when a room-temperature molten salt, or ionic liquid, is exposed to a sufficiently high electric field. Ionic liquid ion sources (ILISs) have shown potential to be used in various focused ion beam (FIB) applications, since their operation and characteristics are similar to those of liquid metal ion sources, with the advantage that ILIS work at low temperatures in comparison and a large number of ionic liquids with many different compositions are available. In this article, the authors present results on the emission characteristics of negative ions extracted from an iodine-based ionic liquid using a time-of-flight mass spectrometer and a retarding potential analyzer. The ionic liquid 1-butyl-3-methylimidazolium iodide (BMI-I) is used as source media, producing a droplet free beam with multiple solvated ion species. Attention is given to BMI-I, in particular, due to the potential of creating a beam of pure and clustered I-ions, which are expected to improve the performance in applications based on secondary emission and reactive species. Properties important to the focusing of the ion beam such as mass and energy distributions are obtained. The full width at half maximum of the energy distribution is measured to be on the order of 10 eV, with an estimated angular intensity of 0.65×10−6A sr−1. Estimated performance of the ILIS in a hypothetical FIB column gives current densities of 0.15 A cm−2.
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79.70.+q Field emission, ionization, evaporation, and desorption
29.25.Ni Ion sources: positive and negative

Optimization of focused ion beam performance

C. W. Hagen and P. Kruit

J. Vac. Sci. Technol. B 27, 2654 (2009); http://dx.doi.org/10.1116/1.3237132 (6 pages)

Online Publication Date: 2 December 2009

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The authors have analyzed how much current can be obtained in the probe of an optimized two-lens focused ion beam (FIB) system. This becomes relevant, as systems become available that have the potential to image and/or fabricate structures smaller than 10 nm. The probe current versus probe size curves were calculated for a commercial gallium-FIB, the nano-FIB system, and the helium microscope, using partly published, partly estimated system parameters. The current in sub-10 nm probes in the Ga systems turns out to be limited by the reduced brightness of the source and the chromatic aberration of the objective lens. In probes larger than 40 nm the current is limited by the angular current density and the spherical aberration of both lenses. The He system is limited at all probe sizes by the angular current density of the source and the chromatic aberration of both lenses in sub-5 nm probes and the spherical aberration of both lenses at probes larger than 10 nm. As the emission current of the He source is much smaller than that of the Ga source, the statistical Coulomb interactions in the gun lens region do not contribute to the total probe size, as is the case for the Ga systems.
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42.79.Bh Lenses, prisms and mirrors
41.85.Gy Chromatic and geometrical aberrations
42.15.Fr Aberrations
42.79.-e Optical elements, devices, and systems

Beam induced deposition of platinum using a helium ion microscope

Colin A. Sanford, Lewis Stern, Louise Barriss, Lou Farkas, Mark DiManna, Russ Mello, Diederik J. Maas, and Paul F. A. Alkemade

J. Vac. Sci. Technol. B 27, 2660 (2009); http://dx.doi.org/10.1116/1.3237095 (8 pages) | Cited 10 times

Online Publication Date: 2 December 2009

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Helium ion microscopy is now a demonstrated practical technology that possesses the resolution and beam currents necessary to perform nanofabrication tasks, such as circuit edit applications. Due to helium’s electrical properties and sample interaction characteristics relative to gallium, it is likely that the properties and deposition characteristics of beam induced deposited films will be different than those produced using gallium focused ion beam technology. However, there is at this date very little literature discussing the use of helium beams for beam induced chemistry or characterization of the resulting films. In this article, the authors present initial results regarding the deposition of platinum using a helium ion microscope and a gaseous organometallic precursor. Within this work a Carl Zeiss ORION™ helium ion microscope was used along with an OmniGIS unit to deposit platinum while exploring a variety of controllable parameters such as beam current, beam overlap, and size of deposition.
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81.16.-c Methods of micro- and nanofabrication and processing
61.80.Jh Ion radiation effects
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Ion multibeam nanopatterning for photonic applications: Experiments and simulations, including study of precursor gas induced etching and deposition

Christoph Ebm, Elmar Platzgummer, Hans Loeschner, Stefan Eder-Kapl, Peter Joechl, Marco Kuemmel, Ruediger Reitinger, Gerhard Hobler, Anton Koeck, Rainer Hainberger, Markus Wellenzohn, Florian Letzkus, and Mathias Irmscher

J. Vac. Sci. Technol. B 27, 2668 (2009); http://dx.doi.org/10.1116/1.3242693 (6 pages) | Cited 5 times

Online Publication Date: 2 December 2009

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The capabilities of charged particle nanopatterning (CHARPAN) for photonic device fabrication are investigated. The CHARPAN tool is a proof-of-concept tool for a multi-ion beam system that the authors used to directly pattern photonic structures into both Si and Ni as well as for maskless exposure of hydrogen silsesquioxane resist. The realized structures have a regular array and show adequate roundness of the holes as well as little sidewall roughness. For the development and a better understanding of the processes they extended and used the IonShaper® simulation software. They could achieve excellent agreement between sputtering simulation and experiments. Furthermore, they developed a nonlocal recoil-based algorithm for the simulation of ion beam induced etching and deposition. Simulation results for three dimensional nanopatterning with this algorithm are presented.
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81.16.Rf Micro- and nanoscale pattern formation
81.16.Nd Micro- and nanolithography
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.65.Cf Surface cleaning, etching, patterning
85.40.Hp Lithography, masks and pattern transfer
61.80.Jh Ion radiation effects

Near neighbor averaging: A technique for improving image uniformity in aperture array lithography

A. Nasrullah, D. Smith, T. Sherlock, P. Ruchhoeft, and D. Litvinov

J. Vac. Sci. Technol. B 27, 2674 (2009); http://dx.doi.org/10.1116/1.3265462 (5 pages) | Cited 1 time

Online Publication Date: 2 December 2009

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Ion beam aperture array lithography was developed to rapidly form large arrays of periodic patterns whose shape is defined at the printing step. This is accomplished with a massive array of ion beamlets formed by exposing a stencil mask with a dense array of openings to a broad ion beam; these can be moved across the wafer surface to write the shape of the unit element with each beamlet. In this work, the authors demonstrate that the uniformity of the aperture array mask image can be significantly improved by averaging the exposure with images formed by the neighboring apertures. This reduces the tolerances for patterns in the stencil mask and allows for the correction of random defects that may occur during the mask fabrication process. To achieve this, each aperture image is formed as the sum of the images of itself and its neighbors. They demonstrate, through modeling and experiment, that this process can form images where the standard deviation of the openings has been reduced by a factor of 3 when averaging the exposure over nine neighboring apertures. They show that the size distribution scales inversely with the square root of the number of near neighbor exposures.
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85.40.Hp Lithography, masks and pattern transfer
81.16.Nd Micro- and nanolithography
42.30.-d Imaging and optical processing

Nanoimprint lithography stamp modification utilizing focused ion beams

Heinz D. Wanzenboeck, Simon Waid, Emmerich Bertagnolli, Michael Muehlberger, Iris Bergmair, and Rainer Schoeftner

J. Vac. Sci. Technol. B 27, 2679 (2009); http://dx.doi.org/10.1116/1.3265461 (7 pages) | Cited 3 times

Online Publication Date: 2 December 2009

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Nanoimprint lithography (NIL) has been established as a high-throughput technique to fabricate sub-25-nm patterns at a low cost. The fabrication of NIL templates with features in the submicrometer range is currently a bottleneck of the NIL technology. The replication of errors on NIL templates places a major challenge on the reusability of templates. Focused ion beam (FIB) technology is employed to modify prestructured NIL templates. In this work, repair strategies for NIL stamps are discussed. Excess material from stamps has been removed by ion milling. Nanoscale trenches and ultrathin lamellas fabricated with a focused ion beam and their corresponding imprints are presented. It has been confirmed that commercial UV-NIL stamps can be modified by FIB milling and imprinted line patterns were successfully replicated by UV-NIL using the repaired templates. Furthermore, the potential of three-dimensional NIL templates structured by FIB was evaluated. Three-dimensional imprints with features down to 80 nm with good structure conformity to the template were demonstrated. The capabilities and limitations of FIB as repair technology for NIL stamps are discussed.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
81.16.Rf Micro- and nanoscale pattern formation

Ion beam sharpening of diamond tools having small apex angle without facet and ripple formations

Takashi Nagase, Hiroyuki Kato, S. A. Pahlovy, Iwao Miyamoto, and Yuya Nakamura

J. Vac. Sci. Technol. B 27, 2686 (2009); http://dx.doi.org/10.1116/1.3246404 (5 pages) | Cited 2 times

Online Publication Date: 2 December 2009

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The sharpening of diamond tools with small apex angles by low energy (1.0 keV) ion beam faces great challenges because of facet formation at the cutting edge of the tools. Adding to the problem is the formation of ripple, also appearing at the cutting edge of the tools that occurs when the ion beam bombardment is done at some off-normal angle of incidence. In this work, the authors investigated the dependence of the facet angles on the ion beam energy. They also studied the phenomenon of ripple formation as influenced by ion dose, ion beam energy, and ion incidence angles. Based on the experimental results they then developed a method for sharpening the tool with 45° apex without facet formation. They also studied ripple formation using 1.0 keV Ar+ ion beam at a tilt angle β of 30°. The work also used simulations to predict the changes in the profile of diamond tools during ion beam machining at a fixed tilt angle β. They found that simulation results on the profile of the diamond knife matched quite well with the experimental results. They conclude that it is possible to make sharp diamond knife with an apex angle of 45° and that sharpening time can be predicted applying simulations.
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89.20.Kk Engineering
81.20.Wk Machining, milling

Fabrication of complementary metal-oxide-semiconductor integrated nanomechanical devices by ion beam patterning

G. Rius, J. Llobet, X. Borrisé, N. Mestres, A. Retolaza, S. Merino, and F. Perez-Murano

J. Vac. Sci. Technol. B 27, 2691 (2009); http://dx.doi.org/10.1116/1.3253550 (7 pages)

Online Publication Date: 2 December 2009

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The authors present a novel approach to fabricate nanomechanical devices integrated into complementary metal-oxide-semiconductor (CMOS) circuits. It is based on focused ion beam patterning using two different processes: (i) ion-beam-induced deposition of tethraethoxysilane and (ii) direct exposure of silicon or polysilicon surfaces. In both cases, the irradiated areas sustain a reactive-ion etching process, acting as robust masks for defining nanomechanical devices with submicron resolution. These processes are compared, in terms of throughput, with direct milling of silicon and with patterning of thin aluminum layers. Compatibility with prefabricated CMOS circuits is studied and they found that the process is entirely compatible if the proper exposure conditions are used.
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81.16.Rf Micro- and nanoscale pattern formation
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
81.65.Cf Surface cleaning, etching, patterning
85.35.-p Nanoelectronic devices
81.15.Jj Ion and electron beam-assisted deposition; ion plating
85.40.Sz Deposition technology

Evaluations of the hopping growth characteristics on three-dimensional nanostructure fabrication using focused ion beam

Reo Kometani, Shin’ichi Warisawa, and Sunao Ishihara

J. Vac. Sci. Technol. B 27, 2698 (2009); http://dx.doi.org/10.1116/1.3250240 (4 pages)

Online Publication Date: 2 December 2009

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Hopping growth characteristics were examined to clarify the growth mechanism of three-dimensional nanostructures fabricated using focused-ion-beam chemical-vapor deposition (FIB-CVD). In this study, the gas density distribution of FIB-CVD was examined. As a result, a gas density has a large distribution on the vertical direction. However, the growth mechanism of a hopping nanostructure could not be explained completely. Therefore, sequential scanning ion microscope images of a hopping growth process were captured. It was found that the gap distance between the growth edges of the upper and lower structures changed during the hopping structure growth. This indicated the positional relationship between the Ga+ FIB and the growth structure. The change in this relationship induced the formation of a bridge bent structure and the change in the growth direction of the upper structure. To confirm the cause of the lower structure growth, the relationship between the Ga+ penetration depth into diamondlike carbon and the thickness of the upper structure was examined. The deposition onto the substrate was caused by the Ga+ FIB’s tail (directly irradiated beam). A hopping growth structure was formed by the repetition of these growth processes.
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81.16.-c Methods of micro- and nanofabrication and processing
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.-w Structure of nanoscale materials

Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist

D. Winston, B. M. Cord, B. Ming, D. C. Bell, W. F. DiNatale, L. A. Stern, A. E. Vladar, M. T. Postek, M. K. Mondol, J. K. W. Yang, and K. K. Berggren

J. Vac. Sci. Technol. B 27, 2702 (2009); http://dx.doi.org/10.1116/1.3250204 (5 pages) | Cited 15 times

Online Publication Date: 2 December 2009

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A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to perform lithography similar to, but of potentially higher resolution than, scanning electron-beam lithography. This article describes the control of this microscope for lithography via beam steering/blanking electronics and evaluates the high-resolution performance of scanning helium-ion-beam lithography. The authors found that sub-10 nm-half-pitch patterning is feasible. They also measured a point-spread function that indicates a reduction in the micrometer-range proximity effect typical in electron-beam lithography.
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81.16.Nd Micro- and nanolithography
81.16.Rf Micro- and nanoscale pattern formation
85.40.Hp Lithography, masks and pattern transfer
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
back to top Maskless Lithography

Charged particle nanopatterning

Elmar Platzgummer and Hans Loeschner

J. Vac. Sci. Technol. B 27, 2707 (2009); http://dx.doi.org/10.1116/1.3243166 (4 pages) | Cited 7 times

Online Publication Date: 2 December 2009

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Charged particle nanopatterning techniques based on electron and ion multibeam projection techniques are finding increased industrial interest for the fabrication of leading-edge complex masks, nanoimprint templates, and,—using maskless and resistless techniques,—for nanosystem device research and development. A proof-of-concept tool for ion projection multibeam nanopatterning has been realized. Inserting a programable aperture plate system with integrated 0.25 μm complementary metal oxide semiconductor electronics, providing switchable beams of 2.5×2.5 μm2 size, with 200× ion-optical reduction, 43 000 programmable beams of 12.5 nm size were obtained, demonstrating 20 nm resolution capability.
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85.35.-p Nanoelectronic devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Evaluation of chamber contamination in a scanning electron microscope

P. Roediger, H. D. Wanzenboeck, G. Hochleitner, and E. Bertagnolli

J. Vac. Sci. Technol. B 27, 2711 (2009); http://dx.doi.org/10.1116/1.3244628 (7 pages) | Cited 7 times

Online Publication Date: 2 December 2009

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In any scanning electron microscope (SEM) organic contamination of the vacuum chamber leads to undesired material deposition resulting in artifacts in imaging or compromises focused electron beam induced processes like etching (FEBIE) [ S. Matsui and K. Mori, Appl. Phys. Lett 51, 1498 (1987) ] or deposition (FEBID) [ S. Matsui and K. Mori, J. Vac. Sci. Technol. B 4, 299 (1986) ; W. F. van Dorp and C. W. Hagen, J. Appl. Phys. 4, 081301 (2008) ]. This effect can also be used on purpose as a method to evaluate the contamination level of a SEM. With a standardized process for controlled deposition from residual gas, a method to evaluate the contamination level of an electron microscope quantitatively and reproductively was developed. Additionally, this method not only allows monitoring the contamination level of a SEM over its lifetime. Also the impact of various deposition parameters on the extent of contamination deposition has been investigated systematically. This method also allows comparing the status of different tools. A comparison of three different SEM tools of different vendors and with different fields of application is demonstrated.
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82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Roles of secondary electrons and sputtered atoms in ion-beam-induced deposition

Ping Chen, Huub W. M. Salemink, and Paul F. A. Alkemade

J. Vac. Sci. Technol. B 27, 2718 (2009); http://dx.doi.org/10.1116/1.3237147 (4 pages) | Cited 5 times

Online Publication Date: 2 December 2009

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The authors report the results of investigating two models for ion-beam-induced deposition (IBID). These models describe IBID in terms of the impact of secondary electrons and of sputtered atoms, respectively. The yields of deposition, sputtering, and secondary electron emission, as well as the energy spectra of the secondary electrons were measured in situ during IBID using (CH3)3Pt(CPCH3) as functions of Ga+ ion incident angle (0°–45°) and energy (5–30 keV). The deposition yield and the secondary electron yield have the same angular dependences but very different energy dependences. It was also found that the deposition yield per secondary electron is very high (⪢10). However, within the investigated angle and energy ranges, the deposition yield is linearly related to the sputtering yield, the offset of which might be due to the contribution of primary ions. They conclude that the sputtered atom model describes IBID better than the secondary electron model.
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79.20.Hx Electron impact: secondary emission
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.15.Cd Deposition by sputtering

Resolution and total blur: Correlation and focus dependencies in e-beam lithography

K. Keil, M. Hauptmann, J. Kretz, C. Constancias, L. Pain, and J.-W. Bartha

J. Vac. Sci. Technol. B 27, 2722 (2009); http://dx.doi.org/10.1116/1.3246365 (5 pages) | Cited 1 time

Online Publication Date: 2 December 2009

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The resolution limit in e-beam lithography is dependent on the resist process, the proximity effect, and the e-beam writer itself. However, it is difficult to distinguish these contributions just by comparing critical dimensions (CDs) of isolated and dense lines. Since the calculation of the parameter α of the point-spread function is usually based on the CD measurement of resist structures, α should include all mentioned contributions. Therefore, the total blur αtotal can be defined as the square root of the squared sums of αprocess, αforward scattering, and αbeam blur. With keeping αprocess constant, the authors compared Gaussian beam (GB) and variable shaped beam (VSB) writers via the isofocal-dose method and proved that the isofocal dose is independent of the beam profile. For further comparison, they enhanced the method to the linewidth roughness and the total blur. For the latter, a special frequency modulated pattern was applied, which enables the determination of αtotal in dependency on the focus. The analysis of the total blur in best focus and the resolution of dense lines, exposed in a negative chemically amplified resist on GB and VSB writers, indicates their proportionality, which is supported by the same analysis with a nonchemically amplified resist. The resolution of the VSB writer cannot be directly compared to the GB writers’ resolution since the beam blur of the former changes with the shot size.
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85.40.Hp Lithography, masks and pattern transfer

Gas assisted focused electron beam induced etching of alumina

T. Bret, B. Afra, R. Becker, Th. Hofmann, K. Edinger, T. Liang, and P. Hoffmann

J. Vac. Sci. Technol. B 27, 2727 (2009); http://dx.doi.org/10.1116/1.3243208 (5 pages) | Cited 6 times

Online Publication Date: 2 December 2009

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This study investigates focused electron beam induced etching for the removal of alumina particles on patterned extreme ultra violet (EUV) mask using nitrosyl chloride (NOCl) as assist gas. As potential contaminant, particles of aluminum oxide (alumina, Al2O3) have been successfully removed, leaving the underlying layers undamaged. Particles were applied onto an EUV mask, consisting of a multilayer Bragg mirror capped with a thin ruthenium layer and a structured tantalum nitride (TaN/TaON) absorber/antireflective film. Alumina particles were selectively etched using the chlorine-based gas, NOCl. Neither the Ru nor the absorber was significantly etched during the process in spite of a square area scanned by the focused electron beam being larger than the particle. The process resolution is discussed based on Monte Carlo electron scattering simulations. Thermodynamic driving forces for the electron-induced reactions and its selectivity are discussed and a chemical rationale is proposed.
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81.65.Cf Surface cleaning, etching, patterning

Fabrication of high-aspect ratio silicon nanopillars and nanocones using deep reactive ion etching

C. Fischer, J. W. Menezes, S. A. Moshkalev, C. Veríssimo, A. R. Vaz, and J. W. Swart

J. Vac. Sci. Technol. B 27, 2732 (2009); http://dx.doi.org/10.1116/1.3246359 (5 pages) | Cited 1 time

Online Publication Date: 2 December 2009

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Bosch type processes have been employed to fabricate nanostructured Si surfaces. Nanopillars and nanocones in Si have been fabricated using different techniques for Ni micromasking. Plasma redeposition of Ni was found to be responsible for Si pillar formation with diameters varying in the submicron range. A possibility to produce tilted nanopillars with tilt angles up to as high as 25° has been demonstrated. In other method, previously deposited and annealed thin Ni films were employed. Smaller Ni nanoislands were obtained, and the formation of Si nanocones was demonstrated using longer passivation steps. In this case, reflection coefficients as low as 1.2% were obtained for the optimized etching process time.
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81.65.Cf Surface cleaning, etching, patterning
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
52.77.Bn Etching and cleaning
81.16.-c Methods of micro- and nanofabrication and processing
81.65.Rv Passivation
68.47.Fg Semiconductor surfaces

Direct write of optical waveguides on chalcogenide thin films using electron beams

G. B. Hoffman, W. Zhou, R. Sooryakumar, and R. M. Reano

J. Vac. Sci. Technol. B 27, 2737 (2009); http://dx.doi.org/10.1116/1.3265542 (5 pages)

Online Publication Date: 2 December 2009

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Electron beam induced reliefs in Ge0.2Se0.8 thin films deposited by pulsed laser deposition on oxide coated silicon wafers are fabricated for the direct write of rib optical waveguides at telecommunication wavelengths. The physical dimensions of the reliefs are experimentally determined as a function of electron beam exposure conditions. Relief heights in excess of three times the initial film thickness are achieved. The lateral translation of the thin film material is observed to be of the order of tens of microns for relatively slow beam scan rates. Numerical simulations based on a full-wave finite element eigenmode analysis support the existence of single mode guided waves. The surface roughness of the optical waveguides, dominated by the pulse laser deposition process, is reduced to approximately 1 nm by planarization of the thin film, via thermal embossing, prior to electron beam exposure. A bidirectional writing scheme is implemented to remove variations in relief heights observed at waveguide terminations. Nonuniform electron beam exposures are used to demonstrate three-dimensional waveguide tapers useful for the realization of fiber-to-waveguide optical transitions.
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68.55.ag Semiconductors
81.15.Fg Pulsed laser ablation deposition
61.80.Fe Electron and positron radiation effects
68.35.bg Semiconductors
42.79.Gn Optical waveguides and couplers

High density submicron features using a laser pattern generator and double patterning

Mikhail E. Gaevski, G. Patrick Watson, and Anthony E. Novembre

J. Vac. Sci. Technol. B 27, 2742 (2009); http://dx.doi.org/10.1116/1.3263192 (3 pages)

Online Publication Date: 2 December 2009

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Line and space patterns have been fabricated in Si with periods as small as 1.3 μm using a double patterning technique and an optical direct write tool. The pattern density of a single lithography step is shown to be limited by the proximity effect and that gratings with periods smaller than about 2.0 μm are beyond the resolution of the 405 nm wavelength laser direct write tool employed in these experiments. The lithography-etch–lithography-etch technique, which includes a highly selective reactive ion etch step, provides a robust way to create 4 mm long gratings of 1.5 μm period. Variations in this two step lithography process limit the practical minimum pitch for long gratings to about 1.4 μm.
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42.79.Dj Gratings
42.86.+b Optical workshop techniques
42.62.-b Laser applications

Laser print patterning of planar spiral inductors and interdigitated capacitors

N. Klejwa, R. Misra, J. Provine, R. T. Howe, and S. J. Klejwa

J. Vac. Sci. Technol. B 27, 2745 (2009); http://dx.doi.org/10.1116/1.3264673 (5 pages)

Online Publication Date: 2 December 2009

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This article describes direct laser printing of thin-film polymer onto rigid substrates for use as an etch mask or liftoff layer in patterning on-chip electrical components. Using this technique, the authors fabricated planar spiral inductors of 12×12 mm2 with 2.5–5.5 turns producing series inductance Ls = 80–180 nH as well as planar interdigitated capacitors of 10×10 mm2 with two to nine fingers producing series capacitance Cs = 100–1600 nF. This technique is a low cost, low temperature, rapid turn around, maskless, resist-free means of patterning device features as small as 130 μm.
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42.62.-b Laser applications
84.32.Hh Inductors and coils; wiring
84.32.Tt Capacitors
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.Cf Surface cleaning, etching, patterning
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Generating integrated-circuit patterns via cutting and stitching of gratings

Lin Zhao, Yi Xuan, and Minghao Qi

J. Vac. Sci. Technol. B 27, 2750 (2009); http://dx.doi.org/10.1116/1.3264677 (5 pages)

Online Publication Date: 2 December 2009

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Integrated-circuit patterns, such as those of transistor gates, usually consist of multivertex paths whose line segments are along two orthogonal directions. Such patterns are sometimes called “Manhattan structures” and are typically designed to achieve the highest packing density with a given linewidth. Owing to their arbitrary shapes, these patterns are predominantly generated via electron-beam lithography, a serial process which is inherently slow compared to parallel processes. Moreover, throughput is further reduced with the necessity of proximity correction in electron-beam lithography. On the other hand, interference lithography is a low-cost, parallel process that can achieve small linewidths and pitches, yet the achievable patterns are limited to gratings or other periodic structures. Here the authors propose to synthesize arbitrary Manhattan structures from regular structures such as gratings via cutting and stitching. They demonstrate the cutting and stitching of large-area, highly smooth gratings formed by interference lithography and orientation-dependent etch of silicon. Our method could significantly reduce the writing time in electron-beam lithography for pattern generation and requires no proximity correction.
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85.30.De Semiconductor-device characterization, design, and modeling
81.65.Cf Surface cleaning, etching, patterning
85.40.Hp Lithography, masks and pattern transfer

Precision material modification and patterning with He ions

David C. Bell, Max C. Lemme, Lewis A. Stern, and Charles M. Marcus

J. Vac. Sci. Technol. B 27, 2755 (2009); http://dx.doi.org/10.1116/1.3237113 (4 pages) | Cited 3 times

Online Publication Date: 2 December 2009

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The authors report on the use of a helium ion microscope as a potential technique for precise nanopatterning. Combined with an automated pattern generation system, they demonstrate controlled etching and patterning of materials, giving precise command over the geometery of the modified nanostructure. After the determination of suitable doses, sharp edge profiles and clean etching of areas in materials were observed. In this article they present examples of patterning on SiO2 and graphene, which is particularly relevant. This technique could be an avenue for precise material modification for future graphene based device fabrication. The technique has the potential to revolutionize the way that very thin, one-atomic layer materials are modified in a controlled and predictable way.
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81.07.Bc Nanocrystalline materials
81.16.Rf Micro- and nanoscale pattern formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.65.Cf Surface cleaning, etching, patterning
61.82.Rx Nanocrystalline materials
61.80.Jh Ion radiation effects

Electron postgrowth irradiation of platinum-containing nanostructures grown by electron-beam-induced deposition from Pt(PF3)4

A. Botman, C. W. Hagen, J. Li, B. L. Thiel, K. A. Dunn, J. J. L. Mulders, S. Randolph, and M. Toth

J. Vac. Sci. Technol. B 27, 2759 (2009); http://dx.doi.org/10.1116/1.3253551 (5 pages) | Cited 4 times

Online Publication Date: 2 December 2009

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The material grown in a scanning electron microscope by electron beam-induced deposition (EBID) using Pt(PF3)4 precursor is shown to be electron beam sensitive. The effects of deposition time and postgrowth electron irradiation on the microstructure and resistivity of the deposits were assessed by transmission electron microscopy, selected area diffraction, and four-point probe resistivity measurements. The microstructure, notably the platinum nanocrystallite grain size, is shown to evolve with electron fluence in a controllable manner. The resistivity was observed to decrease as a result of postgrowth electron irradiation, with the lowest observed value of 215±15 μΩ cm. The authors demonstrate that electron beam-induced changes in microstructure can be caused using electron fluences similar to those used during the course of EBID and suggest that the observed effects can be used to tailor the microstructure and functionality of deposits grown by EBID in situ without breaking vacuum.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Jj Ion and electron beam-assisted deposition; ion plating
61.80.Fe Electron and positron radiation effects
73.63.Bd Nanocrystalline materials

Atomic precision lithography on Si

J. N. Randall, J. W. Lyding, S. Schmucker, J. R. Von Ehr, J. Ballard, R. Saini, H. Xu, and Y. Ding

J. Vac. Sci. Technol. B 27, 2764 (2009); http://dx.doi.org/10.1116/1.3237096 (5 pages) | Cited 6 times

Online Publication Date: 2 December 2009

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Lithographic precision is as or more important than resolution. For decades, the semiconductor industry has been able to work with ±5% precision. However, for other applications such as micronanoelectromechanical systems, optical elements, and biointerface applications, higher precision is desirable. Lyding et al. [Appl. Phys. Lett. 64, 11 (1999)] have demonstrated that a scanning tunneling microscope can be used to remove hydrogen (H) atoms from a silicon (100) 2 × 1 H-passivated surface through an electron stimulated desorption process. This can be considered e-beam lithography with a thin, self-developing resist. Patterned hydrogen layers do not make a robust etch mask, but the depassivated areas are highly reactive since they are unsatisfied covalent bonds and have been used for selective deposition of metals, oxides, semiconductors, and dopants. The depassivation lithography has shown the ability to remove single H atoms, suggesting the possibility of precise atomic patterning. This patterning process is being developed as part of a project to develop atomically precise patterned atomic layer epitaxy of silicon. However, significant challenges in sample preparation, tip technology, subnanometer pattern placement, and patterning throughput must be overcome before an automated atomic precision lithographic technology evolves.
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81.65.Rv Passivation
85.40.Hp Lithography, masks and pattern transfer
79.20.La Photon- and electron-stimulated desorption
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.bg Semiconductors
68.43.Rs Electron stimulated desorption

High rate gas dosing for tip based nanofabrication processes

M. P. Kanouff, J. N. Randall, M. Nadesalingham, W. P. Kirk, and R. M. Wallace

J. Vac. Sci. Technol. B 27, 2769 (2009); http://dx.doi.org/10.1116/1.3259955 (7 pages) | Cited 2 times

Online Publication Date: 2 December 2009

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Tip based nanofabrication (TBN) processes promise unprecedented degrees of control and precision for the manufacture of nanostructured materials and devices. These processes use atomic force microscope or scanning tunneling microscope tips to create localized electric fields, electron beams, and other catalyzing conditions to control and detect the position, size, dimension, and orientation of nanostructures. Tip based approaches have deposited metals, oxides, and organic molecules to name a few. Often, a gas phase precursor is required to provide the material for the deposit. The TBN conditions for gas dosing are unique compared to other fabrication processes, e.g., chemical vapor deposition. The manufacture of precision nanostructures requires a contamination-free environment, and hence ultrahigh vacuum conditions must be maintained in the chamber. This can cause a gas jet from a doser to spread into a wide fan resulting in a small precursor flux with a broad distribution. This makes it difficult to meet the large fabrication rates desired for TBN. Ideally, gas dosing would promote rapid deposition rates while limiting the chamber pressure by creating a focused gas jet that is restricted to the intended fabrication area. Continuum gas dynamics and direct simulation Monte Carlo calculations were used to study the effect of design and operational parameters on gas doser performance. The source pressure, doser design, and operating conditions are shown to affect the flux distribution at the substrate. The calculated results are compared to experimental measurements. A novel gas doser design was identified and its performance predicted.
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81.16.-c Methods of micro- and nanofabrication and processing
41.75.Fr Electron and positron beams
07.30.Kf Vacuum chambers, auxiliary apparatus, and materials
back to top Nanoimprint Lithography

Evaluation of nanoimprint lithography as a fabrication process of phase-shifted diffraction gratings of distributed feedback laser diodes

Masaki Yanagisawa, Yukihiro Tsuji, Hiroyuki Yoshinaga, Naoya Kono, and Kenji Hiratsuka

J. Vac. Sci. Technol. B 27, 2776 (2009); http://dx.doi.org/10.1116/1.3244631 (5 pages)

Online Publication Date: 3 December 2009

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The authors have succeeded in employing nanoimprint lithography (NIL) to form diffraction gratings of distributed feedback laser diodes (DFB LDs) used in optical communication. Uniform gratings and phase-shifted gratings with periods of 232 nm have been formed by using a reversal NIL with a step-and-repeat imprint tool. Line edge roughness has been sufficiently low with the fabricated gratings. DFB LDs fabricated by NIL have indicated comparable characteristics with LDs fabricated by electron beam lithography. LDs show high long-term stability in threshold current. The authors have also demonstrated that phase-shifted DFB LDs show better uniformity in characteristics than uniform-grating DFB LDs. The results of this study indicate that NIL has high potential for fabricating DFB LDs.
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42.55.Px Semiconductor lasers; laser diodes
85.40.Hp Lithography, masks and pattern transfer
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Dj Gratings

Complete reversal imprinting for fabricating microlens arrays with faithful shape replication

Po-Hsun Huang and Sen-Yeu Yang

J. Vac. Sci. Technol. B 27, 2781 (2009); http://dx.doi.org/10.1116/1.3258150 (5 pages) | Cited 1 time

Online Publication Date: 3 December 2009

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This article reports a complete reversal imprinting technique for fabrication of microlens array. During this process, by pressing the polymethyl methacrylate substrate against the stainless-steel mold coated with UV-curable resin, the resin microlens array can be transferred from mold to substrate. With this modification of reversal imprinting, the microlens array could be fabricated without difficulty. The uniformity, profiles, and optical properties of the microlenses have been verified. This complete reversal imprinting technique shows its great potential for fabricating microlens arrays with faithful replication.
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42.79.Bh Lenses, prisms and mirrors
42.86.+b Optical workshop techniques

Direct indium tin oxide patterning using thermal nanoimprint lithography for highly efficient optoelectronic devices

Ki-Yeon Yang, Kyung-Min Yoon, SangWoo Lim, and Heon Lee

J. Vac. Sci. Technol. B 27, 2786 (2009); http://dx.doi.org/10.1116/1.3243170 (4 pages) | Cited 8 times

Online Publication Date: 3 December 2009

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Indium tin oxide (ITO) is the most commonly used transparent conducting oxide (TCO) material on account of its high conductivity and transmittance in a visible range. In order to improve the efficiency of optoelectronic devices using TCO materials, the transmittance and conductivity of the TCO layers need to be improved. Recently, various techniques, which use nanostructures on the surface to improve the transmittance, have attracted considerable attention. In this study, a direct ITO nanopatterning technique using thermal nanoimprint lithography was presented. An ITO nanoparticle solution is used as an imprint resin and postimprint annealing process was followed. The optical transmittance of the ITO glass was increased by forming periodic ITO dot patterns on the ITO glass. UV-visible near infrared spectra showed that the transmittance at 485 nm of the ITO glass with the directly patterned ITO layer was 5% higher than that of ordinary ITO glass.
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81.16.Nd Micro- and nanolithography
61.72.Cc Kinetics of defect formation and annealing
81.16.Rf Micro- and nanoscale pattern formation
85.40.Hp Lithography, masks and pattern transfer

Self-aligned fabrication of 10 nm wide asymmetric trenches for Si/SiGe heterojunction tunneling field effect transistors using nanoimprint lithography, shadow evaporation, and etching

Chao Wang and Stephen Y. Chou

J. Vac. Sci. Technol. B 27, 2790 (2009); http://dx.doi.org/10.1116/1.3237138 (5 pages) | Cited 4 times

Online Publication Date: 3 December 2009

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Fabrication of an asymmetric source/drain structure is important to heterojunction tunneling transistors but is extremely difficult to achieve reliably due to the stringent requirement of nanometer overlay alignment. Here the authors propose and demonstrate a simple self-aligned asymmetric nanotrench fabrication method, which has achieved a 10 nm wide (35 nm deep) trench in source region with an alignment accuracy better than 3 nm. The method is based on asymmetric shadow evaporation of the metal with the gate as a mask, creating an area uncovered by the metal only in the source but not in the drain, and a subsequent reactive ion etching with the evaporated metal as the etching mask. The accuracy of this method was found experimentally and theoretically to be within 5 nm.
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85.30.Tv Field effect devices
81.65.Cf Surface cleaning, etching, patterning
81.05.Cy Elemental semiconductors

SU-8-based immunoisolative microcontainer with nanoslots defined by nanoimprint lithography

Joonbum Kwon, Krutarth Trivedi, Nemani V. Krishnamurthy, Walter Hu, Jeong-Bong Lee, and Barjor Gimi

J. Vac. Sci. Technol. B 27, 2795 (2009); http://dx.doi.org/10.1116/1.3258146 (6 pages) | Cited 4 times

Online Publication Date: 3 December 2009

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Cells can secrete biotherapeutic molecules that can replace or restore host function. The transplantation of such cells is a promising therapeutic modality for the treatment of several diseases including type 1 diabetes mellitus. These cellular grafts are encapsulated in semipermeable and immunoisolative membranes to protect them from the host immune system, while allowing the transport of nutrients and small molecules that are required for cell survival and function. The authors report on SU-8-based biocompatible immunoisolative cuboid microcontainers for cell transplantation. Each microcontainer comprises a 300×300×250 or a 1100×1100×250 μm3 SU-8 hollowed cuboid base that houses the cells and an optically transparent SU-8-based nanoporous lid that closes the device. The hollowed cuboid base was formed by conventional optical lithography to have 8 nl (200×200×200 μm3) encapsulation volume for cellular payload. The lid comprises a thick SU-8 slab with an array of cylindrical wells, whose bottom surface is sealed with a thin nanoporous SU-8 membrane. The nanoporous membrane was created from a 100 nm grating (width and spacing) initial silicon mold subjected to a repeated cycle of oxidation and wet etching to achieve a 20 nm wide and 200 nm pitch nano silicon grating. Nanoimprinting and oblique-angle metal deposition, followed by inductively coupled plasma etching were utilized to create 15 nm wide and 350–450 nm deep nanoslots in the thin SU-8 membrane. Isolated mouse islets were encapsulated in the hollowed cuboid base and the nanoporous lid was assembled on top. The penetration of large and small molecules into the microcontainer was observed with fluorescence.
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87.85.Rs Nanotechnologies-applications
87.85.jj Biocompatibility
87.85.F- Smart prosthetics
87.17.Uv Biotechnology of cell processes
81.16.Nd Micro- and nanolithography

Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling

J. Kettle, S. Whitelegg, A. M. Song, M. B. Madec, S. Yeates, M. L. Turner, Libor Kotacka, and Vladimir Kolarik

J. Vac. Sci. Technol. B 27, 2801 (2009); http://dx.doi.org/10.1116/1.3253606 (4 pages) | Cited 2 times

Online Publication Date: 3 December 2009

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In this article, the fabrication of poly(3-hexylthiophene) self-switching diodes (SSDs) is described. The unique design of the SSD enables it to be fabricated from a single layer of semiconductor material with a single lithographic step using nanoimprint lithography combined with argon milling. The resultant device morphology showed good uniformity and the SSDs exhibited pronounced current rectification and wide working voltage range.
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85.30.Kk Junction diodes
81.16.Nd Micro- and nanolithography
81.20.Wk Machining, milling

UV irradiation effect on sol-gel indium tin oxide nanopatterns replicated by room-temperature nanoimprint

Yuji Kang, Makoto Okada, Ken-Ichiro Nakamatsu, Kazuhiro Kanda, Yuichi Haruyama, and Shinji Matsui

J. Vac. Sci. Technol. B 27, 2805 (2009); http://dx.doi.org/10.1116/1.3243167 (5 pages) | Cited 2 times

Online Publication Date: 3 December 2009

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The authors report the first room-temperature nanoimprint lithography (RT-NIL) process using sol-gel indium tin oxide (ITO) as a replicated material. The spin-coated ITO film has to be annealed over 600 °C to obtain a low resistivity. The spin-coated ITO film can be delineated by RT-NIL, but the patterns disappear after annealing at 200 °C. To overcome the above problem, they examined UV irradiation effects on a spin-coated ITO film. As a result, they found that the ITO patterns imprinted by RT-NIL stayed the same after being annealed at 600 °C for 1 h due to 254 nm UV irradiation before annealing.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
61.82.Rx Nanocrystalline materials
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.16.Nd Micro- and nanolithography
78.30.Hv Other nonmetallic inorganics
78.66.Li Other semiconductors
81.07.Bc Nanocrystalline materials

Formation of TiO2 nanopattern using reverse imprinting and sol-gel method

Kyung-min Yoon, Ki-Yeon Yang, Heon Lee, and Hyeong-Seok Kim

J. Vac. Sci. Technol. B 27, 2810 (2009); http://dx.doi.org/10.1116/1.3246394 (4 pages) | Cited 5 times

Online Publication Date: 3 December 2009

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TiO2 and its nanopattern fabrication have been studied intensively because of its wide band gap and photocatalystic nature. TiO2 nanopatterns can be made by conventional patterning techniques, consisting of deposition, photolithography, and etching processes. However, these processes include complicated and expensive process steps, such as photolithography. Therefore, a simpler and more economic process is needed. In this work, TiO2 nanopatterns were fabricated using reverse-imprint lithography and the sol-gel method. Ethanol based TiO2 sol was prepared using tetrabuthylorthotitanate (C16H36O4Ti) and diethanolamine (C4H11NO2). TiO2 sol was then coated on the surface of the replicated polymer mold of hard-polydimethylsiloxane and polydimethylsiloxane by spin coating and transferred to the substrate by the reverse imprinting process at 200 °C. A postimprint annealing process was subsequently carried out to form the TiO2 polycrystalline phase. The x-ray diffraction and x-ray photoelectron spectroscopy results confirmed that the transferred TiO2 nanopattern was chemically pure polycrystalline TiO2.
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81.16.Rf Micro- and nanoscale pattern formation
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.16.Nd Micro- and nanolithography
81.65.Cf Surface cleaning, etching, patterning
61.72.Cc Kinetics of defect formation and annealing
79.60.Jv Interfaces; heterostructures; nanostructures

Thermal roller imprint on surface of Teflon perfluoroalkoxy inlet tube

Harutaka Mekaru, Eri Fukushima, Yoshihito Hiyama, and Masaharu Takahashi

J. Vac. Sci. Technol. B 27, 2814 (2009); http://dx.doi.org/10.1116/1.3259931 (6 pages) | Cited 2 times

Online Publication Date: 3 December 2009

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The authors succeeded in transferring patterns from a plate mold onto a cylindrical surface of a plastic tube by thermal imprinting. A roller imprint technology was selected as a pattern transfer method. A cylindrical molding material was rolled on the surface of a plate mold under an optimized contact force and heating temperature. A Teflon perfluoroalkoxy (PFA) inlet tube with an outer diameter of 1/16 in. was selected as a cylindrical molding material. This tube is often used in connecting the microfluid devices in the studies of high performance liquid chromatography. A plate mold was fabricated by employing microelectromechanical systems and Ni electroforming technologies. The minimum linewidth and depth of an electroformed-Ni mold were 5 and 2 μm, respectively. Several patterns were designed to mimic microcoil and comb actuator. A Teflon-PFA inlet tube was sandwiched between an electroformed-Ni plate mold set at the bottom loading stage and a buffer material sheet mounted at the upper loading stage of an imprinting system. After applying a right amount of heat to the electroformed-Ni mold, it was moved horizontally, resulting in the rolling of the tube against the patterned surface of the mold. Using this method, three-dimensional roller imprinting was executed. A relationship among the press depth, contact force, rotation speed of a Teflon-PFA inlet tube, and the imprinted depth was investigated. As a result, it was shown that optimization of the press depth was necessary in order to avoid any slippage or stalking, impeding the rotation of the cylindrical tube.
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81.16.Rf Micro- and nanoscale pattern formation
81.10.Fq Growth from melts; zone melting and refining
07.10.Cm Micromechanical devices and systems
82.80.Bg Chromatography

Thermal imprinting on quartz fiber using glasslike carbon mold

Harutaka Mekaru, Chieko Okuyama, Akihisa Ueno, and Masaharu Takahashi

J. Vac. Sci. Technol. B 27, 2820 (2009); http://dx.doi.org/10.1116/1.3250195 (6 pages)

Online Publication Date: 3 December 2009

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The authors are developing an on-fiber device that uses a quartz fiber as a substrate material and a large-area display and a wearable health monitor by woven fibers with embedded electrical circuit. The electrical circuit will be formed by inserting some electroconductive material into the concave pattern by inkjet and electroless-plating after thermally imprinting on the surface of the quartz fiber. To imprint the quartz fiber, a mold should be able to withstand the high temperature of 1400 °C. Therefore, a mold for quartz imprinting on quartz fiber was fabricated with a glasslike carbon substrate polished by chemical-mechanical-polishing. Mold patterns with high accuracies were processed by applying microelectromechanical system fabrication techniques such as photolithography and reactive ion etching. Precise patterns with 5 μm minimum linewidths were transferred on the front surface of a 200 μm square quartz fiber by thermal nanoimprint technology. The width of the imprinted quartz fibers grew from 200 to 296 μm by the loading force, but part of the loading force was also used up in deforming the quartz fibers. Filling rates, defined as the ratio of the height of imprinted patterns to the depth of mold patterns, were calculated and then the relationship between the filling rate and the aspect ratio of mold patterns was investigated. The molding accuracy was found to be independent of the size of the mold patterns, but it did exhibit its dependency on the aspect ratio of the mold patterns. The expected overlay accuracy, which is important for making circuitry in the future, was approximately 5 μm judging from the imprinted patterns on the quartz fiber.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.40.Hp Lithography, masks and pattern transfer
81.16.Nd Micro- and nanolithography
81.65.Cf Surface cleaning, etching, patterning

Thermal stability of confined flip-chip laminated ω-functionalized monolayers

M. Coll, C. A. Richter, and C. A. Hacker

J. Vac. Sci. Technol. B 27, 2826 (2009); http://dx.doi.org/10.1116/1.3259934 (6 pages) | Cited 3 times

Online Publication Date: 3 December 2009

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The authors present the results of an IR study of the effect of temperature on the formation of Au-monolayer-Si molecular junctions by using a flip-chip lamination approach. Carboxylic acid-terminated alkanethiols self-assembled on an ultrasmooth gold substrate have been laminated to H–Si(111) at 0.8 MPa as a function of temperature. p-polarized-back-side reflection absorption infrared spectroscopy of the alkanoic acids within the molecular junction indicates increasing disorder, likely near the carboxylic acid (–COOH) terminus, of the all-trans chain up to 60 °C, followed by a propagation of these defects down the molecular length. The low frequency region of the IR spectra as a function of temperature indicates that the –COOH group is interacting with the H–Si(111) surface. The IR spectra indicate that the reaction is largely due to the availability of the COOH groups to react. Flip-chip lamination is an effective approach to form molecular junctions. Unlike direct metal evaporation, it ensures the formation of robust structures where the organic monolayer is chemically bonded to both surfaces with no signs of metal penetration.
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68.60.Dv Thermal stability; thermal effects
85.65.+h Molecular electronic devices
78.66.Bz Metals and metallic alloys
78.30.-j Infrared and Raman spectra

Fabrication of nanodot array molds by using an inorganic electron-beam resist and a postexposure bake

Tetsuro Manabe, Jun Taniguchi, and Kiyoshi Ishikawa

J. Vac. Sci. Technol. B 27, 2832 (2009); http://dx.doi.org/10.1116/1.3253649 (5 pages)

Online Publication Date: 3 December 2009

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Nanoimprint lithography (NIL) is regarded as the lithographic technology of the next generation. The photolithography is advancing to perform resolution of 32 nm. Although photolithography and high-voltage-acceleration (>50 kV) electron-beam-lithography (EBL) techniques are currently used in commercialized lithography, these two methods involve high costs. The authors therefore attempted to fabricate arrays of dots, each with a diameter of 20 nm or less, by using low-voltage-acceleration EBL. NIMO-P0701 was used as a positive-type inorganic EB resist in this study and a combination of NIMO-P0701 and low-acceleration-voltage EBL was established. Attempts were then made to use a postexposure bake (PEB) to further reduce the size of the dot array patterns. Finally, the developed dot array mold was transferred by UV-NIL without dry etching. As a result, arrays of dots with a diameter of 20 or 10 nm were fabricated by EBL at an acceleration voltage of 4 kV and subsequent PEB. The resulting mold was developed with buffered hydrofluoric acid. The developed NIMO-P0701 pattern was used for NIL, and pattern transfer to a UV-curable resin was successfully achieved. In this case, the optimum transfer pressure was 4 MPa. Additionally, dot arrays initially produced with diameters of 30 and 18 nm were shrunk to sizes of 20 and 10 nm, respectively, by means of PEB.
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81.16.Nd Micro- and nanolithography
81.16.Rf Micro- and nanoscale pattern formation
81.07.-b Nanoscale materials and structures: fabrication and characterization
85.40.Hp Lithography, masks and pattern transfer

Sub-15 nm nanoimprint molds and pattern transfer

Debbie Morecroft, Joel K. W. Yang, S. Schuster, Karl K. Berggren, Qiangfei Xia, Wei Wu, and R. Stanley Williams

J. Vac. Sci. Technol. B 27, 2837 (2009); http://dx.doi.org/10.1116/1.3264670 (4 pages) | Cited 10 times

Online Publication Date: 3 December 2009

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This work addresses the challenges in fabricating sub-10 nm sized features, dense (sub-15 nm half-pitch) arbitrary-pattern nanoimprint molds, as well as pattern transfer of the molds using nanoimprint. The molds were fabricated using an optimized electron-beam lithography process with hydrogen silsesquioxane (HSQ) resist. Two different mold-processing routes were investigated: (1) HSQ patterns on top of a silicon substrate were directly used for nanoimprint and (2) the HSQ patterns on the mold were transferred into the underlying silicon substrate to increase the aspect ratio of the patterns prior to imprint. After the nanoimprint, lift-off was carried out to demonstrate that the pattern could be transferred into functional materials. The difference between the two mold-processing routes is discussed. The results show excellent resolution transfer throughout the process flow to create sub-15 nm half-pitch patterns in functional materials.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
42.82.Cr Fabrication techniques; lithography, pattern transfer

Fabrication of a seamless roll mold by direct writing with an electron beam on a rotating cylindrical substrate

Jun Taniguchi and Masao Aratani

J. Vac. Sci. Technol. B 27, 2841 (2009); http://dx.doi.org/10.1116/1.3237141 (5 pages) | Cited 7 times

Online Publication Date: 3 December 2009

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The fabrication of a seamless roll mold is difficult because of its cylindrical shape. However, seamless nanoscale patterns are in great demand for optical film applications. The authors have therefore developed a method for producing a seamless roll mold by direct writing with an electron beam (EB) onto a layer of resist material coated on a cylindrical substrate as the substrate is rotated in a vacuum. The resist layer is applied to the roll mold substrate by dipping the substrate in poly(methyl methacrylate) (PMMA) solution and then slowly withdrawing it; this coating method gives a uniform layer of resist. The resulting sample is mounted on rotating equipment and installed in an EB writing machine. The developed patterns produced in this case were seamless submicron striped patterns. The mold was used for ultraviolet nanoimprint lithography to give replica pattern that showed that the height of the striped pattern in the PMMA resist almost corresponded to the thickness of the resist. Furthermore, increasing the angle of incidence of the EB increased the sensitivity of the resist because of the resulting increase in the yield of secondary electrons.
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81.16.Nd Micro- and nanolithography
81.16.Rf Micro- and nanoscale pattern formation
81.10.Fq Growth from melts; zone melting and refining
81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer

Transparent hybrid polymer stamp copies with sub-50-nm resolution for thermal and UV-nanoimprint lithography

Helmut Schift, Christian Spreu, Menouer Saidani, Martin Bednarzik, Jens Gobrecht, Anna Klukowska, Freimut Reuther, Gabi Gruetzner, and Harun H. Solak

J. Vac. Sci. Technol. B 27, 2846 (2009); http://dx.doi.org/10.1116/1.3250207 (4 pages) | Cited 9 times

Online Publication Date: 3 December 2009

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The organic-inorganic hybrid polymer Ormostamp was successfully used for the fabrication of inexpensive, transparent working stamps to be used in nanoimprint lithography. The stamps were produced from different masters by casting and UV exposure of a viscous precursor. The cured hybrid stamp with the replicated surface relief was imprinted into several thermoplastic materials with up to 180 °C imprint temperature. In this article the authors show the effect of the imprint temperature on the structural fidelity. By using combined thermal and UV-nanoimprint lithography at 110 °C imprint temperature, a resolution down to 35 nm is demonstrated. They also investigated deterioration effects due to plasma treatment to simulate the effect of multiple recoating steps.
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85.40.Hp Lithography, masks and pattern transfer
81.16.Nd Micro- and nanolithography
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Easy mask-mold fabrication for combined nanoimprint and photolithography

Helmut Schift, Christian Spreu, Arne Schleunitz, Jens Gobrecht, Anna Klukowska, Freimut Reuther, and Gabi Gruetzner

J. Vac. Sci. Technol. B 27, 2850 (2009); http://dx.doi.org/10.1116/1.3250260 (4 pages) | Cited 2 times

Online Publication Date: 3 December 2009

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Hybrid transparent working stamps with both a surface relief and absorbing mask pattern were fabricated by replicating nanostructures in an Ormostamp film on prepatterned glass substrates. By using a combined nanoimprint and photolithography process, self-aligned mixed patterns of nano- and microstructures can be generated within one single resist layer. In this article the authors present a simple process based on the organic-inorganic hybrid polymer Ormostamp by replication on prepatterned Borofloat substrates. Using these working stamps, grating arrays with 35 nm half pitch were replicated in thermoplastic UV-curable resist. The method is easy to employ for generating mesas with nanostructures on top or the backfilling with microstructures in thermal nanoimprint lithography applications.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
81.16.Rf Micro- and nanoscale pattern formation

Nanogratings containing sub-10-nm wide trenches by dimension reduction from sloped polymer profile

Krutarth Trivedi and Walter Hu

J. Vac. Sci. Technol. B 27, 2854 (2009); http://dx.doi.org/10.1116/1.3264683 (4 pages) | Cited 1 time

Online Publication Date: 3 December 2009

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Large area nanograting patterns are useful in many applications but difficult to fabricate. The authors demonstrate a low temperature dimension reduction method, as a cost-effective alternative to high resolution lithography, to define nanogratings as narrow as 8–10 nm. In this process, the slope of prepatterned polymer gratings, with pitch of 200 nm or larger and width of 100 nm or larger, is contrillably changed from the original straight to curved or sloped. Then, shadow metal evaporation is used to coat the sloped polymer profile to define a much narrower opening. This opening is then transferred to underlying material by plasma etching to form sub-10-nm trenches. The width of trenches can be well controlled by both slope of the profile and angle of metal evaporation. Low processing temperature (as low as 55–85 °C—depending on polymer) allows this method to be used with a wide variety of materials.
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81.16.Rf Micro- and nanoscale pattern formation
42.79.Dj Gratings
81.65.Cf Surface cleaning, etching, patterning
81.16.Nd Micro- and nanolithography

Hierarchical structure formation induced by dewetting in an imprinting process

I. T. Pai, D. W. Chiou, M. H. Hon, and I. C. Leu

J. Vac. Sci. Technol. B 27, 2858 (2009); http://dx.doi.org/10.1116/1.3253615 (4 pages)

Online Publication Date: 3 December 2009

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Creating an ordered three-dimensional hierarchical structure using nanoimprint lithography remains a challenge even though such structures with micro-/nanometer scale are important with technological advances in a number of applications. The controllable polyimide (PI) hierarchical structures could be obtained by using polyamic acid (PAA) precursor in γ-butyrolatone-N-methylpyrrolidone mixture solution of various concentrations (1, 2, 3, and 4 wt %) through dewetting in an imprinting process. PI patterns without a residual layer are formed due to the dewetting phenomena caused by the surface tension, and thus formed patterns of different ambits are obtained due to the fluidity of the PAA solutions. This method is not restricted to a specific polymer and substrate and could be easily applied to pattern other organic materials.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
68.03.Cd Surface tension and related phenomena

Release force reduction in UV nanoimprint by mold orientation control and by gas environment

Hiroshi Hiroshima

J. Vac. Sci. Technol. B 27, 2862 (2009); http://dx.doi.org/10.1116/1.3256247 (4 pages) | Cited 5 times

Online Publication Date: 3 December 2009

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Release force reduction is necessary for reliable UV nanoimprint. The effect of inclined mold detachment and pentafluoropropane as an ambient gas was investigated using a UV-nanoimprint stepper with a mold orientation control and a gas introduction system. The inclined release was realized by diverting the mold orientation control for directing a mold parallel to a wafer commonly used after mold exchange. A pentafluoropropane environment was generated in UV-nanoimprinting space by a gas introduction system within a UV-nanoimprint stepper. The inclined release showed a reduction in release force in comparison to parallel release at this experiment. However, the inclined release is only modestly beneficial for release force reduction. In contrast, the ambient gas in which UV nanoimprint is carried out has a significant impact on release force. Release force can be reduced to one-third of what is obtained in air by using pentafluoropropane. It is quite beneficial to use pentafluoropropane not only for bubble elimination but also for the reduction in release force.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
81.10.Fq Growth from melts; zone melting and refining

Numerical study on bubble trapping in UV nanoimprint lithography

Daisuke Morihara, Yoshinori Nagaoka, Hiroshi Hiroshima, and Yoshihiko Hirai

J. Vac. Sci. Technol. B 27, 2866 (2009); http://dx.doi.org/10.1116/1.3264661 (3 pages) | Cited 3 times

Online Publication Date: 3 December 2009

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Resist filling process in UV-nanoimprint lithography is investigated by numerical simulation. A resist droplet on a substrate is pressed by a template and the resist flows laterally with constant velocity. The resist filling processes into the patterned cavity are simulated by various contact angles of template and substrate to the resist. Two kinds of defect modes are observed. A typical defect is induced by branching of the resist flow at the edge of the patterned cavity when the contact angle between the resist and the template is large. The other one is nonfilling into the patterned cavity for low viscosity resist and low contact angle between the resist and substrate, where the resist flows along the substrate and does not flow into the pattern.
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85.40.Hp Lithography, masks and pattern transfer
81.16.Nd Micro- and nanolithography
02.60.-x Numerical approximation and analysis
47.55.db Drop and bubble formation
47.85.Np Fluidics

Ultrathin fluorinated diamondlike carbon coating for nanoimprint lithography imprinters

Ryan W. Fillman and Robert R. Krchnavek

J. Vac. Sci. Technol. B 27, 2869 (2009); http://dx.doi.org/10.1116/1.3250258 (4 pages) | Cited 2 times

Online Publication Date: 3 December 2009

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Nanoimprint lithography (NIL) has proven to be an exceptional lithographic technique for achieving arbitrary, nanoscale features, over large areas without the use of costly step-and-repeat UV lithography tools. One requirement for NIL is to eliminate adhesion of the imprinted polymer to the imprinter upon withdrawal of the imprinter. Previous work on thick (>100 nm) diamondlike carbon (DLC) layers indicates that fluorinated DLC (F-DLC) provides a durable antiwear, antistick layer. In this work, a process for depositing an ultrathin layer of F-DLC is shown for SiO2 based imprinters.
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81.16.Nd Micro- and nanolithography
68.55.aj Insulators
68.47.Fg Semiconductor surfaces
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.65.-b Surface treatments

Double-anchoring fluorinated molecules for antiadhesion mold treatment in UV nanoimprint lithography

M. Zelsmann, D. Truffier-Boutry, A. Francone, C. Alleaume, I. Kurt, A. Beaurain, B. Pelissier, B. Pépin-Donat, C. Lombard, and J. Boussey

J. Vac. Sci. Technol. B 27, 2873 (2009); http://dx.doi.org/10.1116/1.3245993 (4 pages) | Cited 6 times

Online Publication Date: 3 December 2009

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In this work, the authors evaluate a new type of perfluoropolyether molecule (FLUOROLINK® S10) to be used as an antisticking mold treatment in UV nanoimprint lithography. Unlike currently used ones, this molecule has two anchoring ends groups allowing two covalent grafting sites of the molecule to the mold surface. Obtained results on this molecule are compared to Optool DSX’s ones. Using contact angle measurement, x-ray photoelectron spectroscopy, and electron spin resonance, the authors carried out chemical analysis of the evolution of antisticking treatments as a function of the number of imprints. It is found that both molecules have a roughly equivalent behavior. FLUOROLINK® S10 has shown less chemical resistance, attributed to its larger number of C–O bonds in the molecule, but an improved mechanical resistance, attributed to the double grafting mechanism.
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85.40.Hp Lithography, masks and pattern transfer

Nanoimprint planarization of high aspect ratio nanostructures using inorganic and organic resist materials

Allan S. P. Chang, Christophe Peroz, Xiaogan Liang, Scott Dhuey, Bruce Harteneck, and Stefano Cabrini

J. Vac. Sci. Technol. B 27, 2877 (2009); http://dx.doi.org/10.1116/1.3256658 (5 pages)

Online Publication Date: 3 December 2009

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Planarization is often crucial to the implementation of three-dimensional devices and systems. By using a pressing process analogous to nanoimprint, the authors show that moderate to high aspect ratio ( ≥ 3) photonic nanostructures in the form of one-dimensional and two-dimensional photonic crystals can be effectively planarized with thermally cured sol-gel or uv-curable nanoimprint resist materials. The planarization results are strongly dependent on parameters such as pressing pressure, hydrophobicity of feature surface, spin conditions for sol-gel, and dispense volume for uv-curable. High degree of planarization and complete filling of open features can be achieved through optimization of imprint parameters. Nanoimprint planarization may thus offer a simple, low cost, fast, and viable alternative planarization methodology.
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81.07.Bc Nanocrystalline materials
85.40.Hp Lithography, masks and pattern transfer
68.08.Bc Wetting
42.70.Qs Photonic bandgap materials
81.16.Nd Micro- and nanolithography
81.65.Ps Polishing, grinding, surface finishing

Recovery prevention via pressure control in thermal nanoimprint lithography

Hella-Christin Scheer, Nicolas Bogdanski, Saskia Möllenbeck, and Andre Mayer

J. Vac. Sci. Technol. B 27, 2882 (2009); http://dx.doi.org/10.1116/1.3243227 (6 pages) | Cited 3 times

Online Publication Date: 3 December 2009

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In order to investigate the nonuniformity occurring below wider patterns during thermal nanoimprint lithography, the pressure situation is analyzed in detail. A balance of vertical forces shows that the gas pressure within the cavities is negligible, whereas the effective pressure acting on the stamp structures in contact to the polymer is increased compared to the externally applied pressure. This effective pressure has a high hydrostatic component, which may result in local stamp deformation. Imprint with a low molecular weight polymer provides evidence that the stamp structures become compressed under high pressure, resulting in a nonuniform residual layer beneath the imprinted patterns. In contrast, bending deformation of single stamp structures is found to be negligible. Pressure reduction is effective to reduce stamp compression, improving the uniformity of the residual layer. With typical imprint polymers of medium molecular weight, however, pressure reduction reduces the overall imprint depth.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
back to top Extreme Ultraviolet Lithography

Comparison of fast three-dimensional simulation and actinic inspection for extreme ultraviolet masks with buried defects and absorber features

Chris H. Clifford, Sandy Wiraatmadja, Tina T. Chan, Andrew R. Neureuther, Kenneth A. Goldberg, Iacopo Mochi, and Ted Liang

J. Vac. Sci. Technol. B 27, 2888 (2009); http://dx.doi.org/10.1116/1.3244624 (6 pages) | Cited 4 times

Online Publication Date: 3 December 2009

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The printability of buried extreme ultraviolet (EUV) defects near absorber features is studied using aerial images from the actinic inspection tool (AIT) and the fast EUV mask simulation program RADICAL. This work begins by comparing the printability of isolated defects through focus predicted by RADICAL and measured by the AIT. Then, images of defects near features from both simulation and experiment are investigated for different defect sizes and positions through focus. Finally, RADICAL is used to assess the expected defect printability levels in the less in coherent conditions which are expected to be used for production. Defect printability will be investigated as a function of defect size, position, and focus for the small absorber lines critical to 22 nm imaging using a top-hat illumination condition of sigma = 0.75. Here, defects as small as 0.8 nm surface height cause a critical dimension (CD) change greater than 10% at best focus when located in the worst case position. Defects as small as 2.2 nm cause a CD change greater than 10% even when located under the center of the absorber.
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85.40.Hp Lithography, masks and pattern transfer

Low energy Ar+ ion beam machining of Si thin layer deposited on a Zerodur® substrate for extreme ultraviolet lithography projection optics

T. Iwata, K. Fujiwara, S. A. Pahlovy, and I. Miyamoto

J. Vac. Sci. Technol. B 27, 2894 (2009); http://dx.doi.org/10.1116/1.3253616 (6 pages) | Cited 1 time

Online Publication Date: 3 December 2009

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For the final correction of the surface figure error of aspherical substrates used in the optics of extreme ultraviolet lithography, ion beam figuring (IBF), which is essentially a machining technique, is regarded as the most promising technique for the job. However, one problem with this technique is that it leaves the surface rougher after the IBF treatment than the surface was before the treatment. Moreover, the machined surface becomes positively charged due to the impact of Ar+ ions that constitute the beam for the IBF processing. Therefore, in this research a Si layer was deposited on a Zerodur® substrate by an ion beam sputtering process, following this process, the deposited substrate was machined by an Ar+ ion beam with energies in the range of 0.3–3 keV. The high-spatial-frequency roughnesses (HSFR) of the Zerodur® substrate and of the deposited Si layer were found to be 0.11 and 0.08 nm rms, respectively. However, the HSFR of the machined Si layer reaching to a depth of 50 nm can be made to go below 0.10 nm rms and below 0.15 nm rms by employing 0.5 and 1 keV Ar+ ion beam energies, respectively. Therefore, the proposed method can be employed by carrying out IBF on the substrates used in extreme ultraviolet lithography projection optics.
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81.65.-b Surface treatments
42.82.Cr Fabrication techniques; lithography, pattern transfer
81.16.Nd Micro- and nanolithography
81.20.Wk Machining, milling
06.60.Vz Workshop procedures (welding, machining, lubrication, bearings, etc.)
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Two stage ion beam figuring and smoothening method for shape error correction of ULE® substrates of extreme ultraviolet lithography projection optics: Evaluation of high-spatial frequency roughness

Kazuma Kamijo, Ryou Uozumi, Kenta Moriziri, S. A. Pahlovy, and Iwao Miyamoto

J. Vac. Sci. Technol. B 27, 2900 (2009); http://dx.doi.org/10.1116/1.3258154 (5 pages) | Cited 1 time

Online Publication Date: 3 December 2009

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The ULE® substrates used in projection optics of extreme ultraviolet lithography (EUVL) tools are mechanically prefinished with shape accuracy of several nanometer rms (specification: under 0.15 nm rms) with high-spatial frequency roughness (HSFR) (spatial wavelength: under 1 μm) of 0.06 nm rms. The ion beam figuring is used for the final shape error correction of the substrates at low spatial wavelength of greater than 1 mm using high energy (5–10 keV) Ar+ ion beam with 1 mm beam diameter. However, the surface roughness values of the ULE® substrates when machined by 5 and 10 keV Ar+ ion beams result in 0.15 and 0.17 nm rms, respectively; also it is to be noted that these values are greater than the required 0.15 nm rms specification of HFSR. Therefore, the authors developed a method where low energy (0.3 and 0.5 keV) ion beams are used for smoothening the surface of ULE® substrates, previously treated with high energy (5 and 10 keV) ion beams for figuring. By this two-stage operation of ion beam figuring and followed by smoothening, ULE® substrates with HSFR of 0.1 nm rms were obtained. Therefore, the authors conclude that the method presented here is one of the most effective methods for the figure error correction of ULE® substrate and will be useful in EUVL projection optics.
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85.40.Hp Lithography, masks and pattern transfer

Experimental determination of image placement accuracy in extreme ultraviolet lithography

Sudhar Raghunathan, Obert Wood, Pradeep Vukkadala, Roxann Engelstad, and John G. Hartley

J. Vac. Sci. Technol. B 27, 2905 (2009); http://dx.doi.org/10.1116/1.3264659 (6 pages)

Online Publication Date: 3 December 2009

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Image placement and overlay error specifications in the International Technology Roadmap for Semiconductors continue to get tighter with each successive technology node. Some of the primary contributors to this error in extreme ultraviolet lithography are reticle and chuck surface nonflatness and chucking flatness nonuniformity. In this article, the authors report on results from a set of experiments that were designed to identify and separate chuck and mask contributions to image placement error (IPE). In the first set of experiments, a reticle with large peak-to-valley (P-V) nonflatness was printed to study reticle flattening and reticle thickness variation contributions to the final IPE. The experiments were designed to partition the total IPE into tool correctable and noncorrectable components. A second set of experiments was performed with a flat reticle that can be imaged in four different orientations (0°, 90°, 180°, and 270°). Both reticles have arrays of image placement fiducials that can be printed on the wafer and then used to measure the IPE.
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85.40.Hp Lithography, masks and pattern transfer

Pushing extreme ultraviolet lithography development beyond 22 nm half pitch

Patrick P. Naulleau, Christopher N. Anderson, Lorie-Mae Baclea-an, Paul Denham, Simi George, Kenneth A. Goldberg, Michael Goldstein, Brian Hoef, Gideon Jones, Chawon Koh, Bruno La Fontaine, Warren Montgomery, and Tom Wallow

J. Vac. Sci. Technol. B 27, 2911 (2009); http://dx.doi.org/10.1116/1.3237092 (5 pages) | Cited 1 time

Online Publication Date: 3 December 2009

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Microfield exposure tools (METs) have and continue to play a dominant role in the development of extreme ultraviolet resists and masks. One of these tools is the SEMATECH Berkeley 0.3 numerical aperture (NA) MET. Here, the authors investigate the possibilities and limitations of using the 0.3 NA MET for sub-22-nm half-pitch development. They consider mask resolution limitations and present a method unique to the centrally obscured MET, allowing mask patterning resolution limitations to be overcome. The method, however, comes at the cost of increased sensitivity to mask surface roughness. They also explore projection optics resolution limits and describe various illumination schemes allowing resolution enhancement. At 0.3 NA, the 0.5k1 factor resolution limit is 22.5 nm, meaning that conventional illumination is of limited utility for sub-22-nm development. In general, resolution enhancing illumination encompasses increased coherence. They study the effect of this increased coherence on line-edge roughness (LER), which, along with resolution, is another crucial factor in sub-22-nm resist development. Due to coherence induced LER limitations, addressing the development at 16 nm half pitch and beyond will ultimately require higher NA systems.
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85.40.Hp Lithography, masks and pattern transfer
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.16.Nd Micro- and nanolithography

EUV pattern defect detection sensitivity based on aerial image linewidth measurements

K. A. Goldberg, I. Mochi, P. Naulleau, T. Liang, P.-Y. Yan, and S. Huh

J. Vac. Sci. Technol. B 27, 2916 (2009); http://dx.doi.org/10.1116/1.3264676 (6 pages) | Cited 7 times

Online Publication Date: 3 December 2009

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As the quality of EUV-wavelength mask inspection microscopes improves over time, the image properties and intensity profiles of reflected light can be evaluated in ever-greater detail. The SEMATECH Berkeley Actinic Inspection Tool (AIT) is one such microscope, featuring mask resolution values that match or exceed those available through lithographic printing in current photoresists. In order to evaluate the defect detection sensitivity of the AIT for dense line patterns on typical masks, the authors study the linewidth roughness (LWR) on two masks, as measured in the EUV images. They report the through-focus and pitch dependence of contrast, image log slope, linewidth, and LWR. The AIT currently reaches LWR 3σ values close to 9 nm for 175 nm half-pitch lines. This value is below 10% linewidth for nearly all lines routinely measured in the AIT. Evidence suggests that this lower level may arise from the mask’s inherent pattern roughness. While the sensitivity limit of the AIT has not yet been established, it is clear that the AIT has the required sensitivity to detect defects that cause 10% linewidth changes in line sizes of 125 nm and larger.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
42.82.Cr Fabrication techniques; lithography, pattern transfer

Improvement of imaging properties by optimizing the capping structure in extreme ultraviolet lithography

Chang Young Jeong, Sangsul Lee, Hyun-Duck Shin, Tae Geun Kim, and Jinho Ahn

J. Vac. Sci. Technol. B 27, 2922 (2009); http://dx.doi.org/10.1116/1.3246358 (5 pages) | Cited 1 time

Online Publication Date: 3 December 2009

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The optimization of capping structure for extreme ultraviolet lithography was conducted to minimize the mask shadowing effect. The capping structure used in this study consisted of a phase shift layer and a capping layer on the 40 pairs of Mo–Si multilayer. A phase shift layer was added below tantalum nitride (TaN) absorber pattern. The authors analyzed the effect of the following capping materials such as ruthenium (Ru), silicon (Si), and molybdenum (Mo) with thickness variation. TaN absorber thickness for out-of phase condition shifted with the capping layer thickness change. The variation in capping materials showed less of an effect compared to thickness change. The addition of phase shift layer below absorber pattern showed a significant effect on the phase difference. Ru phase shift layer with a higher δ value than TaN absorber, shifted phase difference to the positive direction, whereas Si phase shift layer with a lower δ value than TaN absorber, shifted phase difference to the negative direction. However, phase difference was not shifted by the addition of Mo phase shift layer which has a similar δ value with TaN absorber. We also calculated the horizontal-vertical overlapping process window according to Mo phase shift layer thickness using 22 nm 1:1 line and space pattern. As Mo phase shift layer thickness increased, the overlapping zone in the exposure latitude of the focus-exposure plots between the horizontal and vertical features increased.
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85.40.Hp Lithography, masks and pattern transfer

Iterative procedure for in situ extreme ultraviolet optical testing with an incoherent source

Ryan Miyakawa, Patrick Naulleau, and Avideh Zakhor

J. Vac. Sci. Technol. B 27, 2927 (2009); http://dx.doi.org/10.1116/1.3259961 (4 pages) | Cited 3 times

Online Publication Date: 3 December 2009

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The authors propose an iterative method for in situ optical testing under partially coherent illumination that relies on the rapid computation of aerial images. In this method, a known pattern is imaged with the test optics at several planes through focus. A model is created that iterates through possible aberration maps until the through-focus series of aerial images matches the experimental result. The computation time of calculating the through-focus series is significantly reduced by reduced optimized coherent sum, an adapted form of the sum of coherent systems decomposition. In this method, the Hopkins formulation is described by an operator S, which maps the space of pupil aberrations to the space of aerial images. This operator is well approximated by a truncated sum of its spectral components.
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42.87.-d Optical testing techniques
42.15.Fr Aberrations
42.25.Kb Coherence
02.60.-x Numerical approximation and analysis

Talbot lithography: Self-imaging of complex structures

A. Isoyan, F. Jiang, Y. C. Cheng, F. Cerrina, P. Wachulak, L. Urbanski, J. Rocca, C. Menoni, and M. Marconi

J. Vac. Sci. Technol. B 27, 2931 (2009); http://dx.doi.org/10.1116/1.3258144 (7 pages) | Cited 4 times

Online Publication Date: 3 December 2009

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The authors present a self-imaging lithographic technique, capable of patterning large area periodic structures of arbitrary content with nanoscale resolution. They start from the original concept of Talbot imaging of binary gratings—and introduce the generalized Talbot imaging (GTI) where periodic structures of arbitrary shape and content form high-definition self-images. This effect can be used to create the complex, periodic patterns needed in the many lithographic fabrication steps of modern semiconductor devices. Since the process is diffraction limited, the achievable resolution depends only on the wavelength, mask patterning, and degree of coherence of the source. Their approach removes all the complex extreme ultraviolet (EUV) reflective masks and optics, replacing them with nanopatterned transmission masks and makes the whole process simple and cost effective. They have successfully verified the GTI concept using first a He–Ne laser, and then demonstrated its potential as a nanolithography method using a compact table-top soft x-ray (EUV) 46.9 nm laser source. These sources provide the high degree of coherence needed by diffraction-based imaging and are extendable to shorter wavelengths. They have recorded EUV GTI images up to the sixth Talbot plane, with consistent high quality good results, clearly demonstrating the ability of the GTI method to record high-resolution patterns at large distances.
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85.40.Hp Lithography, masks and pattern transfer
42.82.Cr Fabrication techniques; lithography, pattern transfer
back to top Optical Lithography

Characterization of pattern-placement error for sub-40-nm memory devices

Jangho Shin, Dongho Cha, Jeongho Yeo, Hochul Kim, Seong-Woon Choi, and Chan-Hoon Park

J. Vac. Sci. Technol. B 27, 2938 (2009); http://dx.doi.org/10.1116/1.3244627 (3 pages)

Online Publication Date: 3 December 2009

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Pattern-placement error (PPE) due to lens aberration is characterized for sub-40-nm memory devices. The amount of PPE depends on the feature size. PPE difference between memory cell and traditional box-in-box or advanced imaging metrology marks of KLA-Tencor Corporation is 4 nm in the worst case for a given illumination condition. To avoid this kind of problem, a cell-like segmentation may be applied for alignment and overlay marks. However, the cell-like segmentation could degrade the alignment-signal intensity. In this article, a simple but effective methodology is introduced so that optimum segmentation size is determined. As a result, PPE error of alignment/overlay marks is close to memory cells with enough alignment-signal intensity.
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42.79.Vb Optical storage systems, optical disks
42.15.Fr Aberrations
42.79.Bh Lenses, prisms and mirrors

Influence of polarization on absorbance modulated subwavelength grating structures

J. E. Foulkes and R. J. Blaikie

J. Vac. Sci. Technol. B 27, 2941 (2009); http://dx.doi.org/10.1116/1.3237098 (6 pages) | Cited 2 times

Online Publication Date: 3 December 2009

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The feasibility of using absorbance modulated structures as subwavelength optical transmission gratings was studied using both analytical techniques and finite element method simulations. Particular note was taken of the relevance of this work to absorbance modulation optical lithography (AMOL) and the understanding of the authors of how to control and improve the transmission of light through the photochromic layer. It was found that absorbance gratings share many characteristics with similar-sized metal gratings, in particular, transmitting transverse magnetic (TM) polarized light better than transverse electric polarized light. For both polarizations the transmission through an absorbance grating produces lower contrast intensity profiles compared to both metal and dielectric gratings; however, there was reasonable contrast to a depth of approximately 40 nm beneath the grating in the TM case for gratings with half-pitch as small as 20 nm. Full vector-field AMOL simulations demonstrate similar trends in which there was improved propagation and confinement of TM polarized light at the short resist-exposing wavelength.
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42.79.Dj Gratings
42.79.Hp Optical processors, correlators, and modulators
85.40.Hp Lithography, masks and pattern transfer

Coherent diffraction lithography: Periodic patterns via mask-based interference lithography

Corey P. Fucetola, Amil A. Patel, Euclid E. Moon, Thomas B. O’Reilly, and Henry I. Smith

J. Vac. Sci. Technol. B 27, 2947 (2009); http://dx.doi.org/10.1116/1.3237093 (4 pages)

Online Publication Date: 3 December 2009

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Periodic structures, such as gratings and grids, are required in a variety of applications including spectroscopy, photonic and phononic devices, and as substrates for basic studies in materials science. Interference lithography readily forms periodic patterns in photoresist, but conventional approaches, using a Lloyd’s mirror or Mach–Zehnder configuration, suffer from a number of shortcomings including difficulty in aligning patterns with respect to pre-existing structures on a substrate and difficulty in precisely repeating a given spatial period. Coherent diffraction lithography (CDL), a mask-based approach, utilizes the well-known Talbot effect to accurately replicate the one- or two-dimentional pattern on a mask by reimaging the mask pattern in photoresist. Moreover, with appropriate alignment marks on the mask, one can align the replicated pattern relative to pre-existing patterns on the substrate. The authors describe the design, construction, and utilization of a dedicated CDL apparatus that permits replication, at a well-defined mask-substrate gap, of the periodic structure of a phase mask. The system also incorporates interferometric-spatial-phase imaging for aligning the replicated pattern relative to fixed fiducials on a substrate. They obtained high quality replications of a mask pattern, consisting of a 600 nm period grating, from the 1st to the 52nd plane of reimaging, i.e., from 1.55 to 40.16 μm.
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42.70.Qs Photonic bandgap materials
07.60.Ly Interferometers
42.82.Cr Fabrication techniques; lithography, pattern transfer
85.40.Hp Lithography, masks and pattern transfer
42.79.Dj Gratings

Stitching periodic submicron fringes by utilizing step-and-align interference lithography

Yung-Pin Chen, Cheng-Hung Chen, Jer-Haur Chang, Hsin-Chieh Chiu, Guan-Yu Chen, Chieh-Hsiu Chiang, Lien-Sheng Chen, Ching-Tung Tseng, Chih-Hsien Lee, Jia-Yush Yen, and Lon A. Wang

J. Vac. Sci. Technol. B 27, 2951 (2009); http://dx.doi.org/10.1116/1.3258152 (7 pages) | Cited 1 time

Online Publication Date: 3 December 2009

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The authors develop a step-and-align interference lithography system to fabricate large-area periodic submicron structures by stitching the unit exposure area step-by-step. A metal mask with a square transparent window in the center is used to intercept the quasi-flat-top region of the expanded Gaussian beam, and thus it serves as a beamshaper to approximate the ideal unit beam that has uniform intensity and spatial coherence. Two-dimensional precision dual-actuator motion stages could provide travel distance for full wafer exposure with 2 nm high precision positioning capability for stitching the submicron patterns. The gratings with period of 700 nm are successfully stitched along two directions on 100 mm diameter wafers.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.25.Hz Interference
42.79.Dj Gratings

Low-cost interference lithography

Corey P. Fucetola, Hasan Korre, and Karl K. Berggren

J. Vac. Sci. Technol. B 27, 2958 (2009); http://dx.doi.org/10.1116/1.3245990 (4 pages) | Cited 4 times

Online Publication Date: 3 December 2009

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The authors report demonstration of a low-cost ( ∼ 1000 USD) interference lithography system based on a Lloyd’s mirror interferometer that is capable of ∼ 300 nm pitch patterning. The components include only a 405 nm GaN diode-laser module, a machinist’s block, a chrome-coated silicon mirror, substrate, and double-sided carbon scanning electron microscopy (SEM) tape. The laser and the machinist’s block were assembled in a linear configuration, and to complete the system, the mirror and substrate were taped to perpendicular surfaces of the machinist’s block. Approximately 50 silicon substrates were prepared, exposed, and developed, after which some were inspected in a SEM. The associated laser spectrum was also measured, enabling calculation of the laser’s fringe visibility as it varied along the substrate surface. To compare the exposed resist pattern to the fringe visibility, the authors measured the first order diffraction efficiency as a function of position along the grating surface. Their measurements indicated that artifacts seen in both the optical spectrum and resulting grating patterns arose from the laser diode source, thus improving the source characteristics will be the topic of future work.
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81.16.Nd Micro- and nanolithography
81.16.Rf Micro- and nanoscale pattern formation
85.40.Hp Lithography, masks and pattern transfer
back to top Modelling Lithographic Exposure

Design specific variation in via/contact pattern transfer: Full chip analysis

Jun-Ho Choy, Valeriy Sukharev, Ara Markosian, Armen Kteyan, Yuri Granik, and Vladimir Bliznetsov

J. Vac. Sci. Technol. B 27, 2962 (2009); http://dx.doi.org/10.1116/1.3253535 (10 pages)

Online Publication Date: 4 December 2009

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A novel model-based algorithm provides a capability to control full chip design specific variation in pattern transfer caused by via/contact etch processes. This physics-based algorithm is capable of detecting and reporting hot spots based on the fab defined thresholds of acceptable variations in the critical dimension of etched shapes. It can also be used as a tool for etch process optimization to capture the impact of a variety of patterns presented in a particular design. A realistic set of process parameters employed by the developed model allows using this novel via-contact etch electronic design automation tool for the design-aware process optimization in addition to the “standard” process-aware design optimization. Measurements of the postetch geometries of contact holes etched in the organosilicate glass with fluorocarbon plasma (C4F8/N2/Ar) are used for model validation and calibration.
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85.40.Hp Lithography, masks and pattern transfer
81.65.Cf Surface cleaning, etching, patterning
89.20.Kk Engineering

Model based optical proximity correction runtime saving with multisegment solver

Jianliang Li, Xiaohai Li, Steven Deeth, Robert Lugg, and Lawrence S. Melvin

J. Vac. Sci. Technol. B 27, 2972 (2009); http://dx.doi.org/10.1116/1.3264667 (7 pages) | Cited 2 times

Online Publication Date: 4 December 2009

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In modern photolithography, model based optical proximity correction (MBOPC) has evolved from a nice-to-have feature to a must-have feature and has been widely adopted to improve the process throughput. The purpose of MBOPC is to adjust the designed pattern on the photomask to introduce mask perturbations such that the layout printed on the wafer is as close as possible to the drawn layout. In regular MBOPC process, the polygons are dissected into segments and corrections are conducted segment by segment. While it is relatively easy and straightforward to find the optimal segment size for most one-dimensional features, it is hard for many two-dimensional features, especially line-end areas. By solving a few segments around line-end areas together, multisegment solver (MSS) showed a good contour match. However, this method is expensive on model calculation, as there is more than one segment size to be optimized and a large number of searching iterations is needed, which makes its runtime sensitive to the number kernels retained in OPC model. In this study, a novel method of computing the signal change in the MBOPC process with MSS is proposed by analyzing the optical kernel sensitivity to mask perturbation. The experimental results show that while the correction accuracy of the MBOPC process with a simplified model is maintained, the MBOPC runtime is reduced by 37%.
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85.40.Hp Lithography, masks and pattern transfer
81.16.Nd Micro- and nanolithography
42.82.Cr Fabrication techniques; lithography, pattern transfer

Low-roughness active microdisk resonators fabricated by focused ion beam

L. A. M. Barea, F. Vallini, A. R. Vaz, J. R. Mialichi, and N. C. Frateschi

J. Vac. Sci. Technol. B 27, 2979 (2009); http://dx.doi.org/10.1116/1.3264481 (3 pages)

Online Publication Date: 4 December 2009

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The authors present a new approach for the fabrication of active microdisk resonators using focused ion beam (FIB) followed by selective wet-chemical etching. This efficient technique enables the placement of the devices at any region of a sample and facilitates prototyping of monolithical integration. Also, it allows the production of very smooth walls required by the resonators. High-quality resonators with an active region based on high-gain InGaAsP/InP quantum wells are demonstrated using this technique. Emission in the C-band at whispering-gallery modes is observed.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.-e Optical elements, devices, and systems
42.86.+b Optical workshop techniques

Electron beam induced deposition of cobalt for use as single- and multiwalled carbon nanotube growth catalyst

M. H. Ervin and B. M. Nichols

J. Vac. Sci. Technol. B 27, 2982 (2009); http://dx.doi.org/10.1116/1.3250259 (4 pages) | Cited 1 time

Online Publication Date: 4 December 2009

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Electron beam induced deposition (EBID) has been investigated by many researchers for a number of applications requiring maskless deposition of material. Here, a scanning electron microscope is used to perform EBID of cobalt (Co) nanoparticles, which are then used as the catalyst for selected-area growth of carbon nanotubes (CNTs). Co nanoparticles were deposited using cobalt tricarbonyl nitrosyl as the precursor. They are oxygen plasma ashed to remove residual carbon from the deposition process prior to the growth of CNTs using a chemical vapor deposition (CVD) process. Co deposits made using different doses were found to have different catalytic properties. At sufficiently low doses, the deposits were insufficient to catalyze any CNT growth. At higher doses, single-walled CNT (SWCNT) growth was observed. Still higher doses produced deposits that catalyzed multiwalled CNT growth as well as some SWCNT growth. These differences in catalytic behavior are believed to result from nanoparticle size variations between and within the deposits. As a result, by using EBID deposited catalyst, it is possible to not only control where CNTs grow but also the kind of CNTs (SW or MW) grown during a single CVD run.
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81.16.-c Methods of micro- and nanofabrication and processing
81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.07.De Nanotubes
61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
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back to top Resists

Alternative developer solutions for extreme ultraviolet resist

Toshiro Itani and Julius Joseph Santillan

J. Vac. Sci. Technol. B 27, 2986 (2009); http://dx.doi.org/10.1116/1.3258151 (4 pages) | Cited 4 times

Online Publication Date: 4 December 2009

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The use of the tetrapropylammonium hydroxide (TPAH) and tetrabutylammonium hydroxide (TBAH) aqueous developer solutions is proposed as an alternative to the tetramethylammonium hydroxide (TMAH) aqueous developer solution (semiconductor industry standard). A polyhydroxystyrene-based extreme ultraviolet (EUV) resist was utilized at a film thickness of 60 nm. To confirm the effectiveness of these alternative developer solutions in improving linewidth roughness (LWR) performance, patterning exposures were carried out using the small field exposure tool with annular (σouter0.7/σinner0.3) illumination conditions. Dissolution contrast curves of EUV resist using the TMAH, TPAH, and TBAH developer solutions have shown similar dissolution characteristics which means that the use of these alternative developer solutions might have minimal effect on the resist resolution limit and sensitivity. Imaging performance analysis results have shown negligible effect on the resolution capability and sensitivity. A 20% LWR improvement was observed with the TBAH developer solution [7.2 nm at 32 nm 1:1 line and space (L/S)] comparing with the TPAH and standard TMAH developer solutions (both at 9.0 nm at 32 nm 1:1 L/S). This improvement was perceived to be the result of the significant increase in dissolution contrast (higher Rmax and larger slope) with the use of the TBAH developer solution.
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85.40.Hp Lithography, masks and pattern transfer

Thermal development of a calixarene resist

V. Auzelyte, A. Langner, and H. H. Solak

J. Vac. Sci. Technol. B 27, 2990 (2009); http://dx.doi.org/10.1116/1.3237137 (3 pages)

Online Publication Date: 4 December 2009

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Thermal development of photoresist films in lithography is an interesting alternative to the common wet development technique, which can result in problems such as swelling, line edge roughness, and pattern collapse. The authors investigated thermal development of a nonchemically amplified calixarene type high-resolution electron beam resist. Isolated and dense structures were developed at 250–400 °C in air and in low vacuum conditions. They achieved 25 nm half-pitch dense line/space patterns and 17 nm isolated lines without sacrificing resist resolution, sensitivity, or contrast. The obtained lines were smoother with more than two times smaller line edge roughness. The results demonstrate the feasibility of using thermal development for high-resolution nanolithography.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer

Control of the critical dimensions and line edge roughness with pre-organized block copolymer pixelated photoresists

Huiman Kang, Yun Jun Kim, Padma Gopalan, and Paul F. Nealey

J. Vac. Sci. Technol. B 27, 2993 (2009); http://dx.doi.org/10.1116/1.3256632 (5 pages) | Cited 1 time

Online Publication Date: 4 December 2009

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Sphere-forming polystyrene-block-poly(t-butyl acrylate) (PS-b-PtBA) diblock copolymer with catalytic amounts of photo-acid generator (PAG) formulated a pixelated photoresist. In thin films with single-sphere thickness, hexagonal arrays of spheres ( ∼ 20 nm diameter on a 40 nm pitch) of PS within a matrix of PAG segregated in PtBA was obtained through solvent annealing. Upon exposure and post-exposure baking, the soluble PtBA matrix was converted to insoluble poly(acrylic acid), such that a negative pattern could be formed in the chlorobenzene developer. The concept of pixelation was demonstrated by exposing line and space patterns with increasing widths. In contrast to the width of the exposure fields that increased monotonically, the widths of the pixelated resist structures after development were quantized with respect to an integer number of rows of spheres. Furthermore, line edge roughness could be correlated with the size of each pixel (diameter of spherical domain).
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85.40.Hp Lithography, masks and pattern transfer

Negative tone molecular resists using cationic polymerization: Comparison of epoxide and oxetane functional groups

Richard A. Lawson, David E. Noga, Todd R. Younkin, Laren M. Tolbert, and Clifford L. Henderson

J. Vac. Sci. Technol. B 27, 2998 (2009); http://dx.doi.org/10.1116/1.3264672 (6 pages) | Cited 2 times

Online Publication Date: 4 December 2009

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Two molecular resists with a common molecular glass core were synthesized and characterized to compare the differences between epoxide (oxirane) and oxetane functional groups for use in high resolution negative tone molecular resists. Both resists are able to obtain at least 50 nm half-pitch at a sensitivity of 75 μC/cm2 under 100 keV electron-beam lithography. Due to differences in the kinetics of the cationic polymerization of epoxides as compared to oxetanes, the epoxide functionalized resist (2-Ep) was able to obtain sub-25-nm half-pitch resolution with good line edge roughness (LER) of 2.9 nm (3σ) while the oxetane resist (2-Ox) was limited to 50 nm half-pitch resolution and exhibited higher LER (3σ) of 10.0 nm. The polymerization of the oxetane functional group has slow initiation and fast propagation which leads to reduced performance in 2-Ox as compared to 2-Ep. While oxetane functionalized molecular resists can obtain reasonably good imaging performance, epoxide functional groups show more promise for use in next generation negative tone resists that have a good combination of resolution, sensitivity, and LER.
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85.40.Hp Lithography, masks and pattern transfer
81.05.Kf Glasses (including metallic glasses)
82.35.-x Polymers: properties; reactions; polymerization

Bond contribution model for the prediction of glass transition temperature in polyphenol molecular glass resists

Richard A. Lawson, Wei-Ming Yeh, and Clifford L. Henderson

J. Vac. Sci. Technol. B 27, 3004 (2009); http://dx.doi.org/10.1116/1.3250264 (6 pages) | Cited 1 time

Online Publication Date: 4 December 2009

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Molecular glass resists have shown potential as replacements for polymeric resists in next generation lithography, especially extreme ultraviolet lithography. One of the main concerns about molecular resists is their glass transition temperature (Tg) which can be very low in some cases due to their small molecular size and other factors. While most of the polymeric chemically amplified resist platforms used thus far have Tg’s above 100 °C, molecular resists investigated in the literature so far have shown a wide range of measured Tg’s from near room temperature to greater than 160 °C. This potential for low Tg values and the current lack of ability to easily predict their Tg is a concern when designing new compounds because a molecular resist may be synthesized with a Tg value that is too low for the required processing conditions (e.g., allowing for dewetting of the resist, flow of the resist features, or excessive photoacid diffusion). To enable rational molecular resist design and overcome these problems, a quantitative structure-property relation model based on bond additivity that allows for the prediction of the Tg of molecular resists based on their full chemical structure has been developed in this work. The model shows a good coefficient of determination (R2) of 0.84 with experimental data, and a standard deviation of only 12 °C for 57 compounds. It works well across multiple different levels of protection, different structural moieties, different molecular sizes, and different types of protecting groups. The model was also simplified to provide a simple heuristic for predicting Tg based on only two or three structural parameters, and this easy to use simplified model provides a similar level of quantitative agreement with experimental data to the full bond additivity model.
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64.70.P- Glass transitions of specific systems
61.43.Fs Glasses
33.15.Bh General molecular conformation and symmetry; stereochemistry
33.15.Fm Bond strengths, dissociation energies

Investigation of surface roughness of poly(methylmethacrylate) developed at reduced temperatures

M. Yan, S. Choi, J. Lee, K. R. V. Subramanian, and I. Adesida

J. Vac. Sci. Technol. B 27, 3010 (2009); http://dx.doi.org/10.1116/1.3237091 (4 pages) | Cited 1 time

Online Publication Date: 4 December 2009

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The surface roughness of poly(methylmethacrylate) (PMMA) with various molecular weights, using 50 keV electron beam, has been investigated at reduced developer temperatures. As the developer temperature decreased, the magnitude of the surface roughness increased rapidly while the contrast curves merged into a single curve below 0 °C. A sharp drop in roughness at the bottom of the resist was observed for all temperatures investigated. At each temperature, the higher molecular weight PMMA had higher maximum roughness.
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61.41.+e Polymers, elastomers, and plastics
68.35.bm Polymers, organics

Defectivity issues in topcoatless photoresists

Jason Cantone, Youri van Dommelen, Aiqin Jiang, Shannon Dunn, Tom Winter, Karen Petrillo, Rick Johnson, Peggy Lawson, Will Conley, and Ryan Callahan

J. Vac. Sci. Technol. B 27, 3014 (2009); http://dx.doi.org/10.1116/1.3253612 (6 pages) | Cited 1 time

Online Publication Date: 4 December 2009

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One method currently being employed to reduce the overall lithography process complexity and cost is the utilization of a topcoatless photoresist. The development of these materials administers an additive to create the same hydrophobic characteristics as those created by advanced topcoats. The main challenge for topcoatless resists is to increase the hydrophobicity without causing too much inhibition at the resist surface which leads to bridging or residue-type defects. The key to such a design lies in creating a balance between leaching control and dissolution characteristics of the resist without degrading lithography performance and increasing defectivity. The addition of these hydrophobic additives into existing ArF photoresist systems has been shown to increase both receding contact angle and advancing contact angle in water-based immersion lithography. In this work, the authors have demonstrated that the defectivity levels of topcoatless resist are equal to or better than the industry standard of topcoat systems. This was achieved by optimizing process conditions. This article will report the influences of the develop process, postcoat apply bake/postexposure bake (PAB/PEB) temperatures, and immersion specific rinses on defect performance of topcoatless resists. It was found that pattern collapse defects along nonexposed regions for some topcoatless material can be drastically reduced by PAB/PEB temperature optimization. Complete elimination of missing pattern defects achieved by use of de-ionized water immersion specific rinses for all materials tested. Finally, the impact of the PAB temperature on surface properties will be investigated.
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85.40.Hp Lithography, masks and pattern transfer

Submillisecond post-exposure bake of chemically amplified resists by CO2 laser spike annealing

Jing Sha, Byungki Jung, Michael O. Thompson, Christopher K. Ober, Manish Chandhok, and Todd R. Younkin

J. Vac. Sci. Technol. B 27, 3020 (2009); http://dx.doi.org/10.1116/1.3263173 (5 pages) | Cited 2 times

Online Publication Date: 4 December 2009

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Pattern formation in a chemically amplified photoresist requires a post-exposure bake (PEB) to catalytically deprotect the polymer. Excessive diffusion of the photogenerated acid results in the loss of line edge definition, blurring of latent images, and changes in the line edge roughness. To optimize the process, the authors have explored submillisecond PEB using a CO2 laser-based scanned annealing system [ M. Chandhok (private communication) ]. Several polymer and photoacid generator resist systems were studied under 800 μs laser spike annealing at estimated temperatures between 200 and 400 °C. All the resist systems exhibit remarkable stability in this time/temperature regime, with the maximum useful temperature limited by thermal deprotection and/or decomposition of the polymer backbone. At lower temperatures, high resolution patterns with sub-100-nm features are formed, comparable to hotplate reference samples. Resist sensitivity is improved significantly for several resist systems (dose to clear is lowered), while other systems exhibit little change in photosensitivity.
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85.40.Hp Lithography, masks and pattern transfer
61.72.Cc Kinetics of defect formation and annealing
81.16.Nd Micro- and nanolithography
back to top Directed Assembly on Patterned Substrate

Curing process of silsesquioxane in self-organized diblock copolymer template

Naoko Kihara, Kazutaka Takizawa, Ryosuke Yamamoto, Hiroki Tanaka, and Hiroyuki Hieda

J. Vac. Sci. Technol. B 27, 3025 (2009); http://dx.doi.org/10.1116/1.3256232 (6 pages)

Online Publication Date: 4 December 2009

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In the case that a self-organized diblock copolymer pattern is applied as an etching mask, one of the polymer components is required to have a high etching durability similar to that of silicon oxide. One suitable material for the purpose is a mixture of polystyrene-b-polyethyleneoxide (PS-PEO) and silsesquioxane (SSQ). After phase separation, the SSQ component is located only in PEO phase. By the following post-treatment, the polymer component was removed and residual cured SSQ structure was formed that could be available as etching mask. In this study, the authors investigated post-treatment process of SSQ in the mixed component system, comparing thermal treatment and oxygen plasma treatment. A significant difference was observed in the vertical shrinkage of the film thickness formed on a Si wafer. The plasma-treated film shrank to 72% of the baked film. By the examination of behavior of PS phase and PEO phase during post-treatment, respectively, it was found that the difference was caused by the curing behavior of SSQ in PEO. In the case of plasma treatment, the polymer component was removed before SSQ curing. As a consequence, plasma treatment gives voidless structure. Using the template as etching mask, 16 nm pitch pattern was transferred to Si wafer.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.Cf Surface cleaning, etching, patterning
81.40.Gh Other heat and thermomechanical treatments
52.77.-j Plasma applications
81.16.Rf Micro- and nanoscale pattern formation
82.35.Jk Copolymers, phase transitions, structure

Lithographically directed surface modification

Richard P. Kingsborough, Russell B. Goodman, and Theodore H. Fedynyshyn

J. Vac. Sci. Technol. B 27, 3031 (2009); http://dx.doi.org/10.1116/1.3250200 (7 pages) | Cited 1 time

Online Publication Date: 4 December 2009

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The directed assembly of polystyrene-block-poly(methyl methacrylate) films on a variety of photolytically nanopatterned siloxane-modified surfaces was investigated. The amount of siloxane removal is related to the exposure dose of a 157 nm laser. The modified surfaces were imaged using a 157 nm interference exposure system to lithographically define areas of different surface energies to direct the assembly of the diblock copolymer films. The analysis of the surface energy aerial image provided insights into the exposure doses required to result in defect-free films. While the slope of the surface energy aerial image was not found to be important by itself, in concert with the difference in high and low surface energy regions, as well as the maximum value of the low surface energy region, it provided insight into conditions needed to direct self-assembly of the block copolymer films. Preliminary investigations concerning the extension of this methodology to 193 nm showed that the polar surface energy of arylsiloxane-modified surfaces can also be affected by 193 nm exposure.
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68.35.bm Polymers, organics
68.35.Md Surface thermodynamics, surface energies
79.20.Ds Laser-beam impact phenomena
81.16.Rf Micro- and nanoscale pattern formation
61.41.+e Polymers, elastomers, and plastics
68.55.am Polymers and organics

Modification of a polystyrene brush layer by insertion of poly(methyl methacrylate) molecules

Guoliang Liu, Shengxiang Ji, Karl O. Stuen, Gordon S. W. Craig, Paul F. Nealey, and F. J. Himpsel

J. Vac. Sci. Technol. B 27, 3038 (2009); http://dx.doi.org/10.1116/1.3253607 (5 pages) | Cited 5 times

Online Publication Date: 4 December 2009

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The ability to tune the wetting behavior of poly(styrene-block-methyl methacrylate) on a polystyrene (PS) brush by insertion of hydroxyl-terminated poly(methyl methacrylate) (PMMA-OH) was demonstrated. The brush properties before and after insertion of PMMA-OH were studied with goniometry, ellipsometry, near edge x-ray absorption fine structure spectroscopy, and scanning electron microscopy. The initial PS brush served as a barrier to the grafting of PMMA onto the substrate. The amount of PMMA that could penetrate through the PS brush barrier and graft onto the substrate depended on the initial PS brush thickness. As a result, the PS:PMMA ratio in the final composite brush, and therefore the brush wetting properties, could be carefully controlled. The final composition also depended on the grafting sequence of the brush molecules. This may offer a generalized approach for fabricating neutral brush surfaces without requiring the synthesis of specific random copolymers.
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78.70.Dm X-ray absorption spectra
61.41.+e Polymers, elastomers, and plastics
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
68.08.Bc Wetting

Focused ion beam-assisted bending of silicon nanowires for complex three dimensional structures

Kimin Jun, Jaebum Joo, and Joseph M. Jacobson

J. Vac. Sci. Technol. B 27, 3043 (2009); http://dx.doi.org/10.1116/1.3259919 (5 pages) | Cited 4 times

Online Publication Date: 4 December 2009

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Functional three dimensional (3D) nanowire structures are possible candidates for future high density and high performance devices. Unfortunately, few methods are known for manipulating nanowires into arbitrary 3D structures, which can be essential for creating a fully general class of devices. In this article, the authors describe a method to fabricate complex 3D nanowire structures by focused ion beam assisted bending. The authors suggest that the stresses induced by beam irradiation account for the bending. By controlling parameters, it was demonstrated that various bending structures may be constructed either on the fly or programmable.
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68.65.La Quantum wires (patterned in quantum wells)
81.07.Gf Nanowires
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
61.82.-d Radiation effects on specific materials

Positioning Pd catalyst particles for carbon nanotube growth using charge patterns created with a scanning electron microscope

A. C. Zonnevylle, C. W. Hagen, P. Kruit, M. Valenti, and A. Schmidt-Ott

J. Vac. Sci. Technol. B 27, 3048 (2009); http://dx.doi.org/10.1116/1.3243165 (3 pages)

Online Publication Date: 4 December 2009

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Positioning of charged nanoparticles with the help of charge patterns in an insulator substrate is a known method. However, the creation of charge patterns with a scanning electron microscope for this is relatively new. Here a scanning electron microscope is used for the creation of localized charge patterns in an insulator, while a glowing wire generator is used as the nanoparticle source. The deposited palladium nanoparticles are used as catalysts for the localized growth of carbon nanotubes in a chemical vapor deposition oven. The authors show first the results on local carbon nanotube growth using this procedure.
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81.16.-c Methods of micro- and nanofabrication and processing
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
61.46.Fg Nanotubes
81.07.De Nanotubes
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Conductive atomic force microscopy study of self-assembled silicon nanostructures

M. R. Bari, R. J. Blaikie, F. Fang, and A. Markwitz

J. Vac. Sci. Technol. B 27, 3051 (2009); http://dx.doi.org/10.1116/1.3258147 (4 pages) | Cited 1 time

Online Publication Date: 4 December 2009

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Understanding the electrical transport properties of nanostructures and metal-nanostructure contacts is important before these can be fabricated into electronic devices. Conductive atomic force microscopy investigations of self-assembled silicon nanostructures are reported here, where the nanostructures are fabricated using electron-beam rapid thermal annealing, a self-assembly process that has been shown to produce field-emission devices using CMOS-compatible technology. Unambiguous correlations between current flow and topography are found, and local current-voltage (IV) spectroscopy measurements are used to determine the ideality factors (1.83–3.20) and barrier heights (0.28–0.49 eV) for the metal-nanostructure contacts.
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81.16.Dn Self-assembly
61.46.Hk Nanocrystals
61.72.Cc Kinetics of defect formation and annealing
68.37.Ps Atomic force microscopy (AFM)
79.70.+q Field emission, ionization, evaporation, and desorption

Embedded vertical nanosheets of SiO2 in PDMS using an alternative nanopatterning process

L. Jalabert, C. Bottier, M. Kumemura, and H. Fujita

J. Vac. Sci. Technol. B 27, 3055 (2009); http://dx.doi.org/10.1116/1.3244630 (4 pages) | Cited 1 time

Online Publication Date: 4 December 2009

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The authors demonstrate for the first time the embedding of vertical nanosheets of thermal silicon dioxide into the surface of polydimethylsiloxane (PDMS). The generic process is suitable for embedding a wide range of thin film nanosheets into PDMS-like polymers. The nanosheets are fabricated on a silicon template, and transferred into the PDMS by molding and releasing the nanosheets from the template during the peel-off of the cured PDMS. Since the template is fully fabricated using semiconductor and compatible processes, the presented technique aims at considerably expanding the range of materials that can be embedded in PDMS, thereby increasing the possible applications. As the width of the nanosheets is defined by the thickness of the deposited materials, nanoscale features can be directly embedded without relying on expensive nanolithography tools.
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81.16.Rf Micro- and nanoscale pattern formation
back to top Graphene

Direct e-beam writing of 1 nm thin carbon nanoribbons

C. T. Nottbohm, A. Turchanin, A. Beyer, and A. Gölzhäuser

J. Vac. Sci. Technol. B 27, 3059 (2009); http://dx.doi.org/10.1116/1.3253536 (4 pages) | Cited 5 times

Online Publication Date: 4 December 2009

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The fabrication of 1 nm thin carbon nanoribbons and nanorings is demonstrated. Aromatic self-assembled monolayers are locally cross-linked by electron beam lithography into polymeric carbon nanosheets. Annealing at 1200 K in ultrahigh vacuum transforms these electrically insulating nanosheets into a conducting two-dimensional phase consisting of nanopatches of graphene with a sheet conductivity of ∼ 10−2S sq. The method allows the direct writing of patterns into the monolayer, permitting the resistless fabrication of arbitrarily sized and shaped carbon nanostructures with a thickness of 1 nm.
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81.16.Dn Self-assembly
81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
64.75.Yz Self-assembly
85.40.Hp Lithography, masks and pattern transfer
61.72.Cc Kinetics of defect formation and annealing

Graphitization at interface between amorphous carbon and liquid gallium for fabricating large area graphene sheets

Jun-ichi Fujita, Ryuuichi Ueki, Yousuke Miyazawa, and Toshinari Ichihashi

J. Vac. Sci. Technol. B 27, 3063 (2009); http://dx.doi.org/10.1116/1.3253542 (4 pages) | Cited 7 times

Online Publication Date: 4 December 2009

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The authors have found that liquid gallium exhibits as a good graphitizing catalyst for a large area graphene sheet. While gallium and carbon are known to be an insoluble system, the authors have found that the catalytic reaction occurs at a very narrow interfacial region between amorphous carbon and liquid gallium. Amorphous carbon film was transformed into graphite layer composed of a few layers of graphene sheet. This thin graphene film can be easily transferred into silicon substrate through the intermediation of poly-dimethyl-siloxane rubber stamping.
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68.55.-a Thin film structure and morphology
back to top Energy Storage

Process and properties of the carbon nanotube assisted LiCoO2 thin-film battery electrode by pulsed laser deposition

An-Ya Lo, Chuan-Shu Sun, Wen-Shou Tseng, and Cheng-Tzu Kuo

J. Vac. Sci. Technol. B 27, 3067 (2009); http://dx.doi.org/10.1116/1.3264678 (6 pages)

Online Publication Date: 4 December 2009

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In this study, a pulsed laser deposition process was developed to deposit a carbon nanotube (CNT) assisted LiCoO2 electrode to improve its power density. The electrodes were deposited on Pt-coated Si substrates with Ar and O2 as sputtering gases and LiCoO2+C as the target. The results indicate that the working pressure is the most important parameter to control the composition of the electrode. Therefore, electrodes with a three-layer structure (i.e., LiCoO2-rich/CNT-rich/LiCoO2-rich) were fabricated by a three-step deposition process by varying the pressures from 13 to 1.3×104 Pa and then 13 Pa again, and it was found that the charge/discharge capacity became approximately 1.5 times greater than that in the corresponding electrode without a CNT-rich layer. The results also indicate that a higher substrate temperature is favorable for improving the crystallinity of the electrode to approach LiCoO2 crystals.
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82.47.Aa Lithium-ion batteries
82.45.Fk Electrodes
81.15.Fg Pulsed laser ablation deposition
81.16.Mk Laser-assisted deposition

Solid-state dye-sensitized solar cell based on semiconducting nanomaterials

Tao-Hua Lee, Dazhi Sun, Xi Zhang, Hung-Jue Sue, and Xing Cheng

J. Vac. Sci. Technol. B 27, 3073 (2009); http://dx.doi.org/10.1116/1.3237094 (5 pages) | Cited 1 time

Online Publication Date: 4 December 2009

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A solid-state dye-sensitized solar cell based on semiconducting nanomaterials is introduced. The device consists of a thin film of ZnO nanoparticles that is loaded with light-absorbing dyes. A p-type semiconductor film is then deposited on top of the dye molecules as a hole transport material. Both pristine poly(3-hexylthiophene) (P3HT) and P3HT doped with XD-grade single-walled carbon nanotube (XDSWNT) are used as the p-type semiconducting films. By having a weight ratio of XDSWNT and P3HT equaled to 0.1:1, short-circuit current was quadrupled from 0.12 to 0.48 mA/cm2 and solar cell efficiency was tripled from 0.023% to 0.07%, compared to devices with pure P3HT as a hole transport material.
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84.60.Jt Photoelectric conversion
81.07.Bc Nanocrystalline materials
73.61.Ga II-VI semiconductors
73.50.Pz Photoconduction and photovoltaic effects
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back to top Nanobiology

Preparation of diamond-shaped channels in SU-8 for optical control of the filling state

S. Möllenbeck, N. Bogdanski, A. Mayer, H.-C. Scheer, J. Zajadacz, and K. Zimmer

J. Vac. Sci. Technol. B 27, 3078 (2009); http://dx.doi.org/10.1116/1.3237136 (4 pages)

Online Publication Date: 4 December 2009

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To improve control during the filling of the channels of a microfluidic device with the fluid under investigation, a new concept is presented: channels with a diamond-shaped cross section. These channels easily allow one to distinguish an unfilled channel from a filled channel by simple optical microscopy. The idea is based on the fact that incident light is totally reflected with unfilled channels, whereas it is mostly transmitted with filled channels. Preparation of such channels in thin SU-8 layers on a glass was performed via a double replication of a Si template with undercut trenches. Functionality tests with filling materials spanning the range of refractive indices of typical organic media provided an excellent contrast between filled and unfilled channels, thus demonstrating the capacity of this concept.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

In situ synthesis and direct immobilization of ssDNA on electron beam patterned hydrogen silsesquioxane

Omar D. Negrete, M. Serdar Onses, Paul F. Nealey, and Franco Cerrina

J. Vac. Sci. Technol. B 27, 3082 (2009); http://dx.doi.org/10.1116/1.3263190 (6 pages) | Cited 2 times

Online Publication Date: 4 December 2009

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In addition to being a high-resolution negative-tone electron beam resist, hydrogen silsesquioxane (HSQ) has chemical properties similar to glass, making it useful for integration with biodevice fabrication. The authors demonstrate the use of electron beam patterned HSQ as a solid support for light-directed in situ ssDNA synthesis and ssDNA immobilization, creating submicron HSQ structures (ranging from 1 μm to 40 nm) that are functionalized with ssDNA. After ssDNA synthesis, the hybridization of Cy-3 labeled complementary strands reveals that the synthesis is indeed localized to the HSQ. They observed relatively low background fluorescence from the supporting silicon substrate or from HSQ where no DNA synthesis was performed. In the course of the experiment they surveyed several materials as support for the HSQ patterning. In addition, the support substrate must be resistant to DNA synthesis. They found that piranha cleaned silicon, glassy carbon, hydrogen plasma treated glassy carbon, and hexamethyldisilazane primed silicon allow little or no synthesis when examined by hybridization with fluorescent labeled complement DNA. This work is relevant to the fabrication of devices that may require submicron patterns of structures functionalized with ssDNA for hybridization assays or DNA self-assembly applications and demonstrates a novel use of a commonly used negative-tone resist.
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87.14.gk DNA
87.15.mq Luminescence
81.16.Rf Micro- and nanoscale pattern formation
81.16.Dn Self-assembly

Gold-tipped elastomeric pillars for cellular mechanotransduction

S. Ghassemi, O. Rossier, M. P. Sheetz, S. J. Wind, and J. Hone

J. Vac. Sci. Technol. B 27, 3088 (2009); http://dx.doi.org/10.1116/1.3259953 (4 pages)

Online Publication Date: 4 December 2009

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The authors describe a technique for the fabrication of arrays of elastomeric pillars whose top surfaces are treated with selective chemical functionalization to promote cellular adhesion in cellular force transduction experiments. The technique involves the creation of a rigid mold consisting of arrays of circular holes into which a thin layer of Au is deposited, while the top surface of the mold and the sidewalls of the holes are protected by a sacrificial layer of Cr. When an elastomer is formed in the mold, Au adheres to the tops of the molded pillars. This can then be selectively functionalized with a protein that induces cell adhesion, while the rest of the surface is treated with a repellent substance. An additional benefit is that the tops of the pillars can be fluorescently labeled for improved accuracy in force transduction measurements.
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81.16.-c Methods of micro- and nanofabrication and processing
61.41.+e Polymers, elastomers, and plastics
68.35.Np Adhesion
82.35.Gh Polymers on surfaces; adhesion

Gallium phosphide nanowire arrays and their possible application in cellular force investigations

Dmitry B. Suyatin, Waldemar Hällström, Lars Samuelson, Lars Montelius, Christelle N. Prinz, and Martin Kanje

J. Vac. Sci. Technol. B 27, 3092 (2009); http://dx.doi.org/10.1116/1.3264665 (3 pages) | Cited 3 times

Online Publication Date: 4 December 2009

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The authors report the fabrication of gallium phosphide nanowire arrays that can be used for cellular force measurements. The nanowire positions are defined using electron beam lithography and the nanowires are grown using metal organic vapor phase epitaxy. By varying the nanowire diameter, length, and spacing from substrate to substrate, they can expect to probe cell forces over several orders of magnitude, depending on the chosen substrate. The small diameter of the nanowires allows them to densely pack the array and to achieve unprecedented spatial resolution for future cell force-array applications.
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81.16.Nd Micro- and nanolithography
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors

Fabrication of nanoscale “curtain rods” for DNA curtains using nanoimprint lithography

T. A. Fazio, M. Visnapuu, E. C. Greene, and S. J. Wind

J. Vac. Sci. Technol. B 27, 3095 (2009); http://dx.doi.org/10.1116/1.3259951 (4 pages) | Cited 1 time

Online Publication Date: 4 December 2009

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The authors have developed a new lithographically based patterning process which significantly increases the throughput of experiments which probe how repair proteins scan DNA molecules for errors. In this process, nanoscale barriers are formed to interrupt the flow of a lipid bilayer in which DNA is tethered to proteins in the bilayer. The barriers trap the DNA, which is then stretched out by hydrodynamic flow, resulting in the formation of “DNA curtains.” Nanoimprint lithography is used to facilitate massively parallel data collection for protein diffusion experiments on DNA.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
87.14.gk DNA
87.14.Cc Lipids
87.16.D- Membranes, bilayers, and vesicles

Electrical detection of proteins and DNA using bioactivated microfluidic channels: Theoretical and experimental considerations

M. Javanmard, H. Esfandyarpour, F. Pease, and R. W. Davis

J. Vac. Sci. Technol. B 27, 3099 (2009); http://dx.doi.org/10.1116/1.3264675 (5 pages)

Online Publication Date: 4 December 2009

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In order to detect diseases such as cancer at an early stage while it still may be curable, it is necessary to develop a diagnostic technique which can rapidly and inexpensively detect protein and nucleic acid biomarkers, without making any sacrifice in the sensitivity. The authors have developed a technique, based on the use of bioactivated microfluidic channels integrated with electrodes for electrical sensing, which can be used to detect protein biomarkers, target cells, and DNA hybridization. In this article, they discuss the theoretical detection limits of this kind of sensor and also discuss various experimental considerations in the electrical characterization of our device. In particular, they discuss the temperature dependence, the impedance drift, the noise sources, and various methods for optimizing the signal to noise ratio.
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87.85.Ox Biomedical instrumentation and transducers, including micro-electro-mechanical systems (MEMS)
87.80.Ek Mechanical and micromechanical techniques
87.19.X- Diseases
87.14.gk DNA
87.14.E- Proteins
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Fabrication methods for creating flexible polymer substrate sensor tags

Harvey Ho and Jack L. Skinner

J. Vac. Sci. Technol. B 27, 3104 (2009); http://dx.doi.org/10.1116/1.3258142 (5 pages)

Online Publication Date: 4 December 2009

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The authors describe the design, fabrication, and testing of a passive wireless sensor platform utilizing low-cost commercial surface acoustic wave (SAW) filters and sensors. Polyimide and polyethylene terephthalate sheets are used as substrates to create a flexible sensor tag that can be applied to curved surfaces. A microfabricated antenna is integrated on the substrate in order to create a compact form factor. The sensor tags are fabricated using 315 MHz SAW filters and photodiodes and tested with the aid of a fiber-coupled tungsten lamp. Microwave energy transmitted from a network analyzer is used to interrogate the sensor tag. Due to an electrical impedance mismatch at the SAW filter and sensor, energy is reflected at the sensor load and reradiated from the integrated antenna. By selecting sensors that change electrical impedance based on environmental conditions, the sensor state can be inferred through measurement of the reflected energy profile. Testing has shown that a calibrated system utilizing this type of sensor tag can detect distinct light levels wireless and passively. The authors also demonstrate simultaneous operation of two tags with different center passbands that detects light. Ranging tests show that the sensor tags can operate at a distance of at least 3.6 m.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
back to top Nano-Mems

Electrothermal actuation of silicon carbide ring resonators

Enrico Mastropaolo, Rebecca Cheung, Anne Henry, and Erik Janzén

J. Vac. Sci. Technol. B 27, 3109 (2009); http://dx.doi.org/10.1116/1.3244622 (6 pages)

Online Publication Date: 7 December 2009

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Silicon carbide (SiC) ring resonators have been designed, simulated, and fabricated in order to achieve higher resonant frequency compared to beam resonators. The resonant frequency as a function of the ring radius and central hole radius, as well as the influence of the electrode design on the actuation efficiency have been investigated. Aluminum (Al) electrodes have been fabricated on top of the structures in order to study the electrothermal actuation of the structures. The bimorph Al/SiC ring resonators have been constructed by etching the SiC in inductively coupled plasma. The release of the Si sacrificial layer has been performed with a XeF2 chemical etching. The radial release and area release have been characterized as a function of the central hole dimension at chamber pressure of 1 and 2 Torr, whereby the release rates have been found to increase as the hole dimensions and the etching pressure increases. In addition, the release process has shown to be governed by aperture effects. The rings fabricated with different dimensions have been actuated mechanically and electrothermally, and the resonant frequency detected optically. The resonant frequency has been shown to increase as the ring radius decreases and the hole radius increases, both theoretically and experimentally.
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77.65.Fs Electromechanical resonance; quartz resonators
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Lateral-flow particle filtration and separation with multilayer microfluidic channels

Hyun Chul Kim, Jaewon Park, Younghak Cho, Hyunsoo Park, Arum Han, and Xing Cheng

J. Vac. Sci. Technol. B 27, 3115 (2009); http://dx.doi.org/10.1116/1.3258155 (5 pages)

Online Publication Date: 7 December 2009

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Separating particles from a suspension and sorting particles into different size ranges are important to many chemical, biological, and bioengineering applications. In this article, a novel lateral-flow particle separation device is presented for continuous particle fractionation from suspensions. This device is based on three-dimensional multilayer poly(dimethylsiloxane) microchannels, which can be fabricated by high-yield and low-cost molding and transfer-bonding techniques. By varying the dimensions of the microchannels in each layer, particles in a suspension can be fractionated into specific layers based on their sizes. Particle separation is successfully achieved in sorting polystyrene microbeads of 1, 10, and 45 μm in diameter into different layers. The yield and selectivity of particle separation can be controlled by device geometries such as channel width and length. This novel continuous-flow particle filtration and separation device is expected to find applications in micrototal analysis systems due to its simple fabrication steps, low cost, and capability of particle separation in a deterministic fashion.
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47.32.Ff Separated flows
47.57.E- Suspensions
47.85.Np Fluidics
47.60.Dx Flows in ducts and channels

Real-time detection of airborne dust particles using paddle-type silicon cantilevers

Bonghyun Park, Jiseok Hong, and Seung-Beck Lee

J. Vac. Sci. Technol. B 27, 3120 (2009); http://dx.doi.org/10.1116/1.3264663 (5 pages)

Online Publication Date: 7 December 2009

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The authors report on the fabrication and operation of a real-time dust particle sensor using a paddle-type silicon cantilever. Electrostatic field applied to the cantilever electrode attracts dust particles, and as they attach on the paddle surface the oscillation phase changes, reflecting the particle mass. The kinetic energy of the oscillating cantilever limits the size of the dust particle landing on its surface at the given electric field, controlling the maximum mass, and therefore the size, of the dust particles being detected. The measurement of a single dust particle of ∼ 1.2 pg attaching and detaching from the oscillator surface was demonstrated. The results show that the paddle-type cantilever sensor may be developed into a real-time monitoring sensor of airborne submicron dust particles.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Nanofabrication of sharp diamond tips by e-beam lithography and inductively coupled plasma reactive ion etching

Nicolaie Moldovan, Ralu Divan, Hongjun Zeng, and John A. Carlisle

J. Vac. Sci. Technol. B 27, 3125 (2009); http://dx.doi.org/10.1116/1.3263174 (7 pages) | Cited 4 times

Online Publication Date: 7 December 2009

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Ultrasharp diamond tips make excellent atomic force microscopy probes, field emitters, and abrasive articles due to diamond’s outstanding physical properties, i.e., hardness, low friction coefficient, low work function, and toughness. Sharp diamond tips are currently fabricated as individual tips or arrays by three principal methods: (1) focused ion beam milling and gluing onto a cantilever of individual diamond tips, (2) coating silicon tips with diamond films, or (3) molding diamond into grooves etched in a sacrificial substrate, bonding the sacrificial substrate to another substrate or electrodepositing of a handling chip, followed by dissolution of the sacrificial substrate. The first method is tedious and serial in nature but does produce very sharp tips, the second method results in tips whose radius is limited by the thickness of the diamond coating, while the third method involves a costly bonding and release process and difficulties in thoroughly filling the high aspect ratio apex of molding grooves with diamond at the nanoscale. To overcome the difficulties with these existing methods, this article reports on the feasibility of the fabrication of sharp diamond tips by direct etching of ultrananocrystalline diamond (UNCD®) as a starting and structural material. The UNCD is reactive ion etched using a cap-precursor-mask scheme. An optimized etching recipe demonstrates the formation of ultrasharp diamond tips ( ∼ 10 nm tip radius) with etch rates of 650 nm/min.
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81.16.-c Methods of micro- and nanofabrication and processing
42.82.Cr Fabrication techniques; lithography, pattern transfer
85.40.Hp Lithography, masks and pattern transfer
52.77.-j Plasma applications
81.65.Cf Surface cleaning, etching, patterning

Parallel proximal probe arrays with vertical interconnections

Y. Sarov, A. Frank, Tzv. Ivanov, J.-P. Zöllner, K. Ivanova, B. Volland, I. W. Rangelow, A. Brogan, R. Wilson, P. Zawierucha, M. Zielony, T. Gotszalk, N. Nikolov, M. Zier, B. Schmidt, et al.

J. Vac. Sci. Technol. B 27, 3132 (2009); http://dx.doi.org/10.1116/1.3256662 (7 pages) | Cited 2 times

Online Publication Date: 7 December 2009

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This article presents the fabrication and the characteristics of 8×64, parallel, self-actuated, and independently addressable scanning proximal probes with through-silicon via interconnection passing completely through a silicon wafer. The low-resistance highly doped polysilicon through-wafer electrical interconnects have been integrated with scanning proximal probes (SPPs) to enable back side contacts to the application-specific integrated circuit used as an atomic force microscope control circuitry. Every SPP sensor contains a deflection sensor, thermally driven bimetal (bimorph) actuator, and sharp silicon tip. Dry etching-based silicon on insulator three-dimensional-micromachining technique is employed by the creation of the through-silicon vias and the SPP arrays keeping fully complementary metal-oxide semiconductor compatible process regime. The application of the vertical interconnection technology in large-scale two-dimensional cantilever arrays with off-plane bent cantilevers over the chip’s surface, in a combination with the flip-chip packaging technology allow simultaneous approach and parallel scanning of large areas in noncontact mode.
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85.40.Ls Metallization, contacts, interconnects; device isolation
85.40.Qx Microcircuit quality, noise, performance, and failure analysis

Electrical and mechanical properties of carbon nanotube-polyimide composites

D. Thuau, V. Koutsos, and R. Cheung

J. Vac. Sci. Technol. B 27, 3139 (2009); http://dx.doi.org/10.1116/1.3250192 (6 pages) | Cited 3 times

Online Publication Date: 7 December 2009

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The use of carbon nanotubes (CNTs) as a conductive and high strength filler into polymer hosts has attracted great attention recently. However, in order to increase the conductivity of the polymer and to reinforce mechanically the polymer structure at low weight fraction of CNTs, the integration of the CNTs into the polymer matrix has to be effective. In this study, CNT-polyimide (CNT-Pi) composite has been fabricated by solution mixing. The electrical and mechanical properties of the composite have been investigated as a function of CNT’s loading fraction as well as temperature. It has been found that the electrical and mechanical properties of the CNT-Pi can be improved by integrating the CNTs into the polymer. In particular, the presence of an ac electric field is believed to induce dielectrophoresis (DEP), hence the possible CNT’s alignment inside the polyimide matrix during curing. The DEP effect can play an important role in enhancing the properties of the polymer matrix by reducing the percolation threshold. An ac electric field of 800 kV/cm at a frequency of 1 kHz has been found to be the optimal conditions for integrating the CNTs into the polymer.
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81.16.-c Methods of micro- and nanofabrication and processing
81.05.Qk Reinforced polymers and polymer-based composites
81.07.De Nanotubes
62.25.-g Mechanical properties of nanoscale systems
82.45.Yz Nanostructured materials in electrochemistry
82.45.Wx Polymers and organic materials in electrochemistry
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.de Elastic moduli
73.63.Fg Nanotubes
61.41.+e Polymers, elastomers, and plastics
back to top Nanoelectronics

Void-free filling of spin-on dielectric in 22 nm wide ultrahigh aspect ratio Si trenches

Krutarth Trivedi, Carlo Floresca, Sangjeoung Kim, Hyunjin Kim, Deogbae Kim, Jaehyun Kim, Moon J. Kim, and Walter Hu

J. Vac. Sci. Technol. B 27, 3145 (2009); http://dx.doi.org/10.1116/1.3244626 (4 pages)

Online Publication Date: 7 December 2009

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The authors demonstrate fabrication of ultrahigh aspect ratio nanotrenches, made by nanoimprint lithography and dimension reduction, as test bed shallow trench isolation structures for the 22 nm semiconductor node. Polysilazane based spin-on dielectric (SOD) material is spin coated into the nanotrenches, of 22 nm width and aspect ratio over 30, to evaluate gap filling property. Fourier transform infrared spectroscopy analysis is used to characterize the curing properties of the SOD, showing that the material can be cured in oxygen at temperatures of 600 °C and higher. Transmission electron microscopy images indicate that the filling is complete and void-free along the entirety of the trench.
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81.16.Nd Micro- and nanolithography
78.30.Am Elemental semiconductors and insulators

Nanostructuring of epitaxial graphene layers on SiC by means of field-induced atomic force microscopy modification

G. Rius, N. Camara, P. Godignon, F. Pérez-Murano, and N. Mestres

J. Vac. Sci. Technol. B 27, 3149 (2009); http://dx.doi.org/10.1116/1.3250208 (4 pages) | Cited 3 times

Online Publication Date: 7 December 2009

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Micrometer-size graphene ribbons are generated by epitaxial growth on SiC substrates and contacted by electron beam lithography. The isolated graphene islands are patterned at nanometer scale by atomic force microscopy (AFM) under the application of an external polarization to the graphene layers. Contrary to previous reports, the patterning can be made at positive and negative polarizations and using significantly lower absolute voltages. The technique is used to tune the electrical resistance of the graphene ribbons. Combination of graphitization of SiC and AFM nanopatterning is, in consequence, a powerful approach for the fabrication of prototyped graphene-based nanoelectronic devices.
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68.55.at Other materials
61.46.-w Structure of nanoscale materials
68.37.Ps Atomic force microscopy (AFM)
81.16.Rf Micro- and nanoscale pattern formation

Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors

Xu Li, Richard J. W. Hill, Paolo Longo, Martin C. Holland, Haiping Zhou, Stephen Thoms, Douglas S. Macintyre, and Iain G. Thayne

J. Vac. Sci. Technol. B 27, 3153 (2009); http://dx.doi.org/10.1116/1.3256624 (5 pages) | Cited 8 times

Online Publication Date: 7 December 2009

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This article describes a process flow that has enabled the first demonstration of functional, fully self-aligned 100 nm enhancement mode GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with GaxGdyOz as high-κ dielectric, Pt/W as metal gate stack, and SiN as sidewall spacers. The flow uses blanket metal and dielectric deposition and low damage dry etch modules. As a consequence, no critical dimension lift-off processes are required. Encouraging data are presented for 100 nm gate length devices including threshold voltage of 0.32 V, making these the shortest, fully self-aligned gate length enhancement mode III-V MOSFETs reported to date. This work is a significant step forward to the demonstration of high performance “siliconlike” III-V MOSFETs.
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85.30.Tv Field effect devices

Effects of visible light illumination on the conductance of Al/AlOx single-electron transistors

Hubert C. George, Alexei O. Orlov, Robin A. Joyce, Yong Tang, and Gregory L. Snider

J. Vac. Sci. Technol. B 27, 3158 (2009); http://dx.doi.org/10.1116/1.3259956 (6 pages) | Cited 3 times

Online Publication Date: 7 December 2009

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This report presents a study of the effects of light illumination, from near infrared to blue, on the characteristics of Al/AlOx single-electron transistors (SETs) at low temperatures (0.3–4.2 K). Several effects on the SET conductance are observed when the devices are subjected to light illumination, including changes in the Coulomb blockade oscillation period and amplitude. To determine the origin of the observed effects, SETs with different device geometries were fabricated on semiconducting and insulating substrates. The results show that illumination of semiconducting (Si) substrates leads to the excitation of mobile carriers at the insulator-semiconductor interface that strongly influence the SETs, while the use of wide bandgap insulating substrates (quartz) enables SET operation that is immune to visible light illumination from incident powers of 3 μW/mm2 (flux of about 10 photons/nm2s for whole visible light spectrum).
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85.35.Ds Quantum interference devices
85.35.Gv Single electron devices

Fabrication of nanoscale ZnO field effect transistors using the functional precursor zinc neodecanoate directly as a negative electron beam lithography resist

G. A. C. Jones, G. Xiong, and D. Anderson

J. Vac. Sci. Technol. B 27, 3164 (2009); http://dx.doi.org/10.1116/1.3245989 (5 pages) | Cited 1 time

Online Publication Date: 7 December 2009

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The authors demonstrate ZnO based thin-film transistors (TFTs) fabricated using a metal-organic sol-gel solution process with zinc neodecanoate as precursor. The ZnO films were produced by spin coating the precursor solution onto a substrate and subsequently annealing the film in air for 1 h at 500 °C. Atomic force microscopy and scanning electron microscopy characterizations show that the films consist of particles which have an average size of 45 nm and are closely packed. X-ray diffraction measurement reveals that the particles have a hexagonal structure and are randomly orientated. TFT devices were fabricated by patterning 100 nm thick aluminum source and drain electrodes on top of the ZnO film using standard optical lithographic processes. The devices exhibit n-channel enhancement mode behavior, with a saturation mobility of 1.16 cm2V−1s−1, a drain-current on-to-off ratio of 8.1×107 and a threshold voltage of 16.1 V in ambient environment. Zinc neodecanoate may also be used as a negative resist, and electron beam patterning can be introduced after spin coating to directly “write” cross-linked nanowires into the film. Subsequent development removes the unpatterned areas prior to the annealing process at 500 °C. This process is capable of forming ZnO nanowires down to ∼ 10 nm width. Field effect transistors based on these ZnO nanowires show similar behavior to the thin film devices, operating as n-channel devices in enhancement mode. The results imply that high-performance ZnO transistor devices can be produced by a simple and low-cost technique which may be applicable to integrated electronic systems.
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85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices
81.16.Rf Micro- and nanoscale pattern formation
61.72.Cc Kinetics of defect formation and annealing
81.16.Nd Micro- and nanolithography
back to top Nanophotonics

Perturbed frequency-selective surfaces fabricated on large thin polymer membranes for multiband infrared applications

Juan-José Sanz-Fernández, George Goussetis, and Rebecca Cheung

J. Vac. Sci. Technol. B 27, 3169 (2009); http://dx.doi.org/10.1116/1.3250193 (6 pages)

Online Publication Date: 7 December 2009

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The design, fabrication, and characterization of single-screen perturbed frequency-selective surfaces (FSS) at infrared frequencies for single and multiband applications are reported. Single-band FSS based on parallel strips have been perturbed by decreasing the length of every second strip within the array in order to achieve dual band-stop responses. The same principle has been extended to design FSS exhibiting tri- and quadreflection bands. In addition, strip FSSs have been perturbed by replacing every second strip for a metallic ring, resulting in dual-band filters with different polarization responses of the bands. These designs have been fabricated on large thin polyimide membranes using sacrificial silicon wafers. An oxide interlayer between the sacrificial silicon wafer and the polyimide membrane is employed to stop the silicon etching and is wet etched subsequently by a solution of ammonium fluoride and acetic acid that does not attack either the polyimide membrane or the aluminium FSS elements. Fourier transform infrared spectroscopy measurements are presented to validate the predicted responses of the fabricated prototypes.
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84.40.Ba Antennas: theory, components and accessories
78.30.-j Infrared and Raman spectra
78.66.Qn Polymers; organic compounds

Subwavelength grating structures with magnetic resonances at visible frequencies fabricated by nanoimprint lithography for large area applications

Alex F. Kaplan, Yi-Hao Chen, Myung-Gyu Kang, L. Jay Guo, Ting Xu, and Xiangang Luo

J. Vac. Sci. Technol. B 27, 3175 (2009); http://dx.doi.org/10.1116/1.3243228 (5 pages) | Cited 1 time

Online Publication Date: 7 December 2009

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Transmission of TM-polarized light through a subwavelength metal-dielectric grating structure exhibits strong resonance in the visible range. Simulations by finite-difference time-domain and finite-element methods show that the resonance can be attributed to the magnetic response. Further simulation shows that the grating structure can be optimized by adding an index matching dielectric layer to produce negative refractive index response in the visible band. Easily fabricated using nanoimprint lithography and conveniently able to be excited by incident light normal to the fabrication plane, such metal-dielectric grating structure could find potential use in large area negative refractive index applications.
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42.79.Dj Gratings
81.16.Nd Micro- and nanolithography
42.82.Cr Fabrication techniques; lithography, pattern transfer

Advanced silicon processing for active planar photonic devices

Michael Shearn, Kenneth Diest, Xiankai Sun, Avi Zadok, Harry Atwater, Amnon Yariv, and Axel Scherer

J. Vac. Sci. Technol. B 27, 3180 (2009); http://dx.doi.org/10.1116/1.3256649 (3 pages) | Cited 1 time

Online Publication Date: 7 December 2009

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Using high quality, anisotropically etched Si waveguides bonded to InGaAsP, the authors demonstrate a hybrid laser, whose optical profile overlaps both Si and III-V regions. Continuous wave laser operation was obtained up to 45 °C, with single facet power as high as 12.7 mW at 15 °C. Planar Si optical resonators with Q = 4.8×106 are also demonstrated. By using a SF6/C4F8 reactive ion etch, followed by H2SO4/HF surface treatment and oxygen plasma oxide, the optical losses due to the waveguide and the bonding interface are minimized. Changes of optical confinement in the silicon are observed due to waveguide width variation.
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42.82.-m Integrated optics
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.60.By Design of specific laser systems

Diameter-dependent guided resonance of dielectric hole-array membrane

Neil Ou, J. H. Shyu, H. M. Lee, and J. C. Wu

J. Vac. Sci. Technol. B 27, 3183 (2009); http://dx.doi.org/10.1116/1.3259957 (4 pages) | Cited 3 times

Online Publication Date: 7 December 2009

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Silicon nitride photonic crystal slabs having various submicron lattice constants and hole diameters have been investigated, in which optical transmission measurements were utilized in the characterization of the guided resonance. Samples were fabricated by using standard electron beam lithography in combination with KOH wet etching and reactive ion etching dry etching through a silicon substrate and silicon nitride membrane, respectively. The transmittance data reveal the asymmetrical shape of absorption dips associated with Fano resonance, and the positions of the resonance were found to be in accordance with the lattice constant. In addition, multiabsorption dips were evolved from the main absorption dip and became discernable when increasing the hole diameter. The plane wave expansion method was used to identify the mode splitting in the band structure that is caused by a finite size hole diameter, giving rise to the multiabsorption dips. Furthermore, the finite element method was used to calculate the transmission spectra. The simulated representations were in positive agreement with the experimental results.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
42.70.Qs Photonic bandgap materials
61.66.-f Structure of specific crystalline solids
78.40.Ha Other nonmetallic inorganics
81.07.Bc Nanocrystalline materials
71.20.Nr Semiconductor compounds

Fabrication of novel digital optical spectrometer on chip

S. Babin, C. Peroz, A. Bugrov, A. Goltsov, I. Ivonin, V. Yankov, S. Dhuey, S. Cabrini, E.-B. Kley, and H. Schmidt

J. Vac. Sci. Technol. B 27, 3187 (2009); http://dx.doi.org/10.1116/1.3237114 (5 pages) | Cited 1 time

Online Publication Date: 7 December 2009

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A novel type of digital optical spectrometer on chip is proposed and first results of their fabrication and characterization are reported. The devices are based on computer-designed digital planar holograms which involves millions of lines specifically located and oriented in order to direct the output light into the designed focal points according to the wavelength. Spectrometers were fabricated on silicon dioxide and hafnium dioxide planar waveguides using electron beam lithography and dry etching. The optical performances of the first devices with up to 1000 channels for a central wavelength of 660 nm are reported.
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07.60.Rd Visible and ultraviolet spectrometers
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Iterative phase recovery using wavelet domain constraints

Leili Baghaei, Ali Rad, Bing Dai, Piero Pianetta, R. Fabian W. Pease, and Jianwei Miao

J. Vac. Sci. Technol. B 27, 3192 (2009); http://dx.doi.org/10.1116/1.3258632 (4 pages) | Cited 2 times

Online Publication Date: 7 December 2009

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Phase retrieval is a central problem in coherent x-ray diffraction microscopy. Various methods have been proposed to solve the problem with the most successful being iterative methods with a finite spatial support constraint. In this work, a new constraint is formulated in the wavelet domain using low-resolution a priori information. Experimental results indicate that the constraint is sufficient to reconstruct an object from Fourier modulus measurements.
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42.30.Wb Image reconstruction; tomography
02.30.Nw Fourier analysis
02.30.Uu Integral transforms
02.60.-x Numerical approximation and analysis

On the influence of the sputtering in determining the resolution of a scanning ion microscope

V. Castaldo, C. W. Hagen, P. Kruit, E. van Veldhoven, and D. Maas

J. Vac. Sci. Technol. B 27, 3196 (2009); http://dx.doi.org/10.1116/1.3253549 (7 pages) | Cited 2 times

Online Publication Date: 7 December 2009

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The determination of the quality of an imaging system is not an easy task for, in general, at least three parameters, strictly interdependent, concur in defining it: resolution, contrast, and signal-to-noise ratio. The definition of resolution itself in scanning microscopy is elusive and the case of scanning ion microscopy is complicated by the damage of the sample under the ion beam, which, especially for small features, can be the limiting factor. This is indeed the case for most focused ion beam systems, which exploit beams of Ga+. The only way to overcome this limit is to exploit sources of low mass ions, such as H+ and He+. In this article the authors analyze the way the sputtering may affect the resolution, defined as smallest detectable feature in an image, of a scanning ion microscope, for heavy and light ions, in the case of spherical features. It appears that the fundamental limit to the resolution in scanning microscopy is not given by the spot size, but by the dynamics of the interaction of the beam with the sample and the consequent modification of the sample’s geometry, even for beams of light ions. For example, in the case of Sn nanospheres under a He+ beam, the authors found a minimum theoretical detectable particle size limit of ∼ 1 nm and an experimental limit of ∼ 5 nm.
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68.37.-d Microscopy of surfaces, interfaces, and thin films
61.46.-w Structure of nanoscale materials

Mask observation results using a coherent extreme ultraviolet scattering microscope at NewSUBARU

Tetsuo Harada, Junki Kishimoto, Takeo Watanabe, Hiroo Kinoshita, and Dong Gun Lee

J. Vac. Sci. Technol. B 27, 3203 (2009); http://dx.doi.org/10.1116/1.3258633 (5 pages) | Cited 5 times

Online Publication Date: 7 December 2009

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A coherent scattering microscope for extreme ultraviolet (EUV) light has been developed for the actinic inspection of EUV lithography masks. It was installed at the NewSUBARU synchrotron facility. It provides aberration-free, diffraction-limited imaging and a high numerical aperture. Coherent EUV light scattered (diffracted) from a mask is recorded using an EUV charged coupled device camera with a numerical aperture of 0.15. An image of the sample is reconstructed using a hybrid input-output algorithm, which retrieves the phase from the intensity data. Masks containing periodic line-and-space and hole patterns with a half-pitch ranging from 100 to 400 nm were fabricated in the laboratory and imaged. The reconstructed images correlate well with images obtained with a scanning electron microscope (SEM). The actinic critical dimension of the linewidth of TaN absorber patterns on a mask was measured and was consistently found to be 25 nm larger than that obtained from the SEM data.
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85.40.Hp Lithography, masks and pattern transfer
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
42.79.Pw Imaging detectors and sensors

Inspection method for contact/via-holes using a low-energy electron microcolumn

Y. C. Kim, D. W. Kim, S. Ahn, T. S. Oh, J. B. Kim, Y. S. Roh, D. G. Hasko, and H. S. Kim

J. Vac. Sci. Technol. B 27, 3208 (2009); http://dx.doi.org/10.1116/1.3272076 (5 pages) | Cited 2 times

Online Publication Date: 14 December 2009

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Further scaling of semiconductor devices is limited by the increasing number of defects in contact- or via-holes that occur as the aspect ratio increases. Inspection of the bottom of a via-hole, to check for complete clearance, becomes problematical for aspect ratios greater than about 5. Such an inspection is extremely important to circuit yield, as any residue in the hole will result in device failure. At present, holes are inspected from the top using conventional scanning electron microscope imaging, but this method is ineffective for hole diameters <100 nm. Smaller holes need to be observed by this method in cross section to ensure clearance; a method that is not suitable for manufacturing. To resolve the problem, the authors propose a novel method of inspecting small contact/via-holes using a low voltage microcolumn, where the image formed by the specimen current is very sensitive to the presence of residues in the hole. Simply when the beam is place over the hole, the presence of a residual thin film at the bottom of the hole can be reliably detected simply by measuring the sample current due to a stationary electron probe. This inspection method is been demonstrated with a patterned SiO2 layer on a Si substrate. Preliminary results for currents measured from this sample show that the Si substrate and the SiO2 residual layer are clearly distinguished. The inspection method and test results for a submicrometer pattern will be discussed in detail.
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68.55.-a Thin film structure and morphology
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Development of pseudorandom binary arrays for calibration of surface profile metrology tools

Samuel K. Barber, Paul Soldate, Erik H. Anderson, Rossana Cambie, Wayne R. McKinney, Peter Z. Takacs, Dmytro L. Voronov, and Valeriy V. Yashchuk

J. Vac. Sci. Technol. B 27, 3213 (2009); http://dx.doi.org/10.1116/1.3245997 (7 pages) | Cited 5 times

Online Publication Date: 14 December 2009

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Optical metrology tools, especially for short wavelengths (extreme ultraviolet and x-ray), must cover a wide range of spatial frequencies from the very low, which affects figure, to the important mid-spatial frequencies and the high spatial frequency range, which produces undesirable scattering. A major difficulty in using surface profilometers arises due to the unknown point-spread function (PSF) of the instruments [ G. D. Boreman, Modulation Transfer Function in Optical and Electro-Optical Systems (SPIE, Bellingham, WA, 2001) ] that is responsible for distortion of the measured surface profile. Generally, the distortion due to the PSF is difficult to account for because the PSF is a complex function that comes to the measurement via the convolution operation, while the measured profile is described with a real function. Accounting for instrumental PSF becomes significantly simpler if the result of measurement of a profile is presented in the spatial frequency domain as a power spectral density (PSD) distribution [ J. W. Goodman, Introduction to Fourier Optics, 3rd ed. (Roberts & Company, Englewood, CO, 2005) ]. For example, measured PSD distributions provide a closed set of data necessary for three-dimensional calculations of scattering of light by the optical surfaces [ E. L. Church et al., Opt. Eng. (Bellingham) 18, 125 (1979) ; J. C. Stover, Optical Scattering, 2nd ed. (SPIE Optical Engineering Press, Bellingham, WA, 1995) ]. The distortion of the surface PSD distribution due to the PSF can be modeled with the modulation transfer function (MTF), which is defined over the spatial frequency bandwidth of the instrument. The measured PSD distribution can be presented as a product of the squared MTF and the ideal PSD distribution inherent for the system under test. Therefore, the instrumental MTF can be evaluated by comparing a measured PSD distribution of a known test surface with the corresponding ideal numerically simulated PSD. The square root of the ratio of the measured and simulated PSD distributions gives the MTF of the instrument. The applicability of the MTF concept to phase map measurements with optical interferometric microscopes needs to be experimentally verified as the optical tool and algorithms may introduce nonlinear artifacts into the process. In previous work [ V. V. Yashchuk et al., Proc. SPIE 6704, 670408 (2007) ; Valeriy V. Yashchuk et al., Opt. Eng. (Bellingham) 47, 073602 (2008) ] the instrumental MTF of a surface profiler was precisely measured using reference test surfaces based on binary pseudorandom (BPR) gratings. Here, the authors present results of fabricating and using two-dimensional (2D) BPR arrays that allow for a direct 2D calibration of the instrumental MTF. BPR sequences are widely used in engineering and communication applications such as global position systems and wireless communication protocols. The ideal BPR pattern has a flat “white noise” response over the entire range of spatial frequencies of interest. The BPR array used here is based on the uniformly redundant array (URA) prescription[ E. E. Fenimore and T. M. Cannon, Appl. Opt. 17, 337 (1978) ] initially used for x-ray and gamma ray astronomy applications. The URA’s superior imaging capability originates from the fact that its cyclical autocorrelation function very closely approximates a delta function, which produces a flat PSD. Three different size BPR array patterns were fabricated by electron beam lithography and induction coupled plasma etching of silicon. The basic size units were 200, 400, and 600 nm. Two different etch processes were used, CF4/Ar and HBr, which resulted in undercut and vertical sidewall profiles, respectively. The 2D BPR arrays were used as standard test surfaces for MTF calibration of the MicroMap-570 interferometric microscope using all available objectives. The MicroMap-570 interferometric microscope uses incoherent illumination from a tungsten filament source and common path modulated phase shifting interference to produce a set of interferograms detected on a change coupled device. Mathematical algorithms applied to the datasets yield the surface phase map. The HBr etched two-dimensional BPR arrays have proven to be a very effective calibration standard making possible direct calibration corrections without the need of additional calculation considerations, while departures from the ideal vertical sidewall require an additional correction term for the CF4/Ar etched samples [ Samuel K. Barber et al., Abstract to Optics and Photonics 2009: Optical Engineering and Applications Symposium, San Diego, CA, 2–6 August 2009 ]. Initial surface roughness of low cost “prime” wafers limits low magnification calibration but should not be a limitation if better polished samples are used.
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42.79.Dj Gratings
42.30.Lr Modulation and optical transfer functions
68.37.-d Microscopy of surfaces, interfaces, and thin films
07.60.Ly Interferometers
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
06.20.fb Standards and calibration

Automatic measurement of electron beam size by beam metrology technique using 20 nm test pattern

C. Peroz, S. Babin, M. Machin, E. Anderson, S. Cabrini, S. Dhuey, and B. Harteneck

J. Vac. Sci. Technol. B 27, 3220 (2009); http://dx.doi.org/10.1116/1.3258652 (6 pages) | Cited 1 time

Online Publication Date: 14 December 2009

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A robust operator independent measurement of electron beam sizes in two coordinates is demonstrated by using beam metrology (BEAMETR) technique. This method involves software associated with a specially designed pattern sample. The fabrication of this sample was done using 100 keV electron beam lithography and lift-off of metal. A proximity correction was applied to improve pattern quality. The minimum feature size of the fabricated BEAMETR patterns was 20 nm; this allowed for the measuring of beam size down to 2 nm. Beam size and shape measurements were done using three scanning electron microscopes; their operating conditions (voltage, aperture, and astigmatism) were varied. Repeatability and test pattern dependence were also studied, which demonstrated a good consistency of the results.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
42.82.Cr Fabrication techniques; lithography, pattern transfer
81.16.Rf Micro- and nanoscale pattern formation

Toroidal spectrometer for signal detection in scanning ion/electron microscopes

H. Q. Hoang and A. Khursheed

J. Vac. Sci. Technol. B 27, 3226 (2009); http://dx.doi.org/10.1116/1.3250202 (6 pages) | Cited 1 time

Online Publication Date: 14 December 2009

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This article presents a second-order focusing toroidal spectrometer/detection system for scanning ion/electron microscopes. The spectrometer, combined with a prefocusing electrostatic lens, is predicted to have relative energy resolutions of 0.02% and 0.088% for emission angular spreads of ±6° and ±10°, respectively, corresponding to transmittances of around 20% and 34%. Initial experimental backscattered electron (BSE) spectra were recorded with a prototype toroidal spectrometer functioning as an attachment unit inside a conventional scanning electron microscope (SEM). These results were used to quantify SEM BSE material contrast.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Real time scatterometry for profile control during resist trimming process

M. El Kodadi, S. Soulan, M. Besacier, and P. Schiavone

J. Vac. Sci. Technol. B 27, 3232 (2009); http://dx.doi.org/10.1116/1.3256594 (6 pages) | Cited 2 times

Online Publication Date: 14 December 2009

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In situ and real time control of the different process steps in semiconductor device manufacturing becomes a critical challenge, especially for the lithography and plasma etching processes. Dynamic scatterometry is among the few solutions able to meet the requirement for in line monitoring. In this article, the authors demonstrate that dynamic scatterometry can be used as a real time monitoring technique during the resist trimming process. Different process parameters, such as chemistries and bias power, were used in the experiments for the demonstration; they discuss the influence of these different parameters on the measurement. For validation purposes, the dynamic scatterometry measurements are compared to three dimensional atomic force microscopy measurements made in the same process conditions. The agreement between both is excellent.
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85.40.Hp Lithography, masks and pattern transfer

Grazing incident small angle x-ray scattering: A metrology to probe nanopatterned surfaces

T. Hofmann, E. Dobisz, and B. M. Ocko

J. Vac. Sci. Technol. B 27, 3238 (2009); http://dx.doi.org/10.1116/1.3253608 (6 pages) | Cited 3 times

Online Publication Date: 14 December 2009

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Grazing incident small angle x-ray scattering (GISAXS) and transmission small angle x-ray scattering studies have been carried out on periodic patterns on silicon substrates in order to determine the average morphology and arrangement of the patterned features. The GISAXS pattern exhibited rods of scattering at Bragg positions, discrete and evenly spaced, in the surface plane. The scattered intensity modulations along each rod have been compared with simulated scattering from simple geometrical patterns to obtain quantitative information on the diameter, width, height, and sidewall inclination of the pillars and gratings. The results are in good agreement with real space images obtained with SEM and demonstrate that GISAXS is a powerful technique for characterizing nanoscale arrays used in patterned media, photonics structures, and electronics structures.
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78.70.Ck X-ray scattering
81.16.Rf Micro- and nanoscale pattern formation
81.16.Nd Micro- and nanolithography
68.35.bg Semiconductors

Subsurface damage from helium ions as a function of dose, beam energy, and dose rate

Richard Livengood, Shida Tan, Yuval Greenzweig, John Notte, and Shawn McVey

J. Vac. Sci. Technol. B 27, 3244 (2009); http://dx.doi.org/10.1116/1.3237101 (6 pages) | Cited 4 times

Online Publication Date: 14 December 2009

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In recent years, helium ion microscopy has produced high resolution images with novel contrast mechanisms. However, when using any charged particle beam, one must consider the potential for sample damage. In this article, the authors will consider helium ion induced damage thresholds as compared to other more traditional charged-particle-beam technologies, as a function of dose, dose rate, and beam energy, and describe potential applications operating regimes.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Jh Ion radiation effects
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)

Understanding imaging modes in the helium ion microscope

Larry Scipioni, Colin A. Sanford, John Notte, Bill Thompson, and Shawn McVey

J. Vac. Sci. Technol. B 27, 3250 (2009); http://dx.doi.org/10.1116/1.3258634 (6 pages) | Cited 7 times

Online Publication Date: 14 December 2009

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Recent investigations are gaining us a better understanding of the nature of the beam-sample interactions in the helium ion microscope and what they mean for the image information provided. In secondary electron (SE) imaging, for example, the surface sensitivity is attributed to the low SE-II fraction. Voltage contrast imaging shows the ability to see both buried structures and to probe the conductance to ground of surface contacts. It is found, however, that the prominence of these two types of contrast varies oppositely with beam energy, yielding information about the nature of the interactions that gives rise to them. Transmission ion imaging can yield information about material density, atomic number, grain structure, and electronic structure. It is possible to capture the top-side SE signal, bright field signal, and dark field signal from a given sample simultaneously. The detection of diffraction contrast is under investigation.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Design of a multiple-electron-beam imaging technique for surface inspection

T. Luo, A. Khursheed, M. Osterberg, and H. Hoang

J. Vac. Sci. Technol. B 27, 3256 (2009); http://dx.doi.org/10.1116/1.3253611 (5 pages)

Online Publication Date: 14 December 2009

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This article presents a multiple-electron-beam imaging technique, which is able to simultaneously process images from multiple scanning sources. The proposal is based on the detection of wide-angle BSEs, whose spectrum is predicted to be largely confined to a sharp elastic peak at the primary electron beam energy, which remains unaltered even if the incident beam is tilted. When electron sources of different energies are used to illuminate the sample, the energy of wide-angle BSEs will be confined close to their respective primary beam energies. The wide-angle scattered electrons are then subsequently energy filtered to obtain separate images, which are formed by parallel energy mode acquisition at the detector plane.
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79.20.Kz Other electron-impact emission phenomena
68.37.-d Microscopy of surfaces, interfaces, and thin films
68.49.Jk Electron scattering from surfaces
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