Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method

Martini, S.; Manzoli, J. E.; Quivy, A. A.

doi:doi:10.1116/1.3301612

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Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / Regular Articles

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J. Vac. Sci. Technol. B 28, 277 (2010); http://dx.doi.org/10.1116/1.3301612 (7 pages)

Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method

S. Martini¹, J. E. Manzoli², and A. A. Quivy³

¹Grupo de Pesquisa em Microeletrônica e Dispositivos Optoeletrônicos, Faculdade de Tecnologia e Ciências Exatas da Universidade São Judas Tadeu, São Paulo, SP 03166-000, Brazil
²Grupo de Pesquisa em Microeletrônica e Dispositivos Optoeletrônicos, Faculdade de Tecnologia e Ciências Exatas da Universidade São Judas Tadeu, São Paulo, SP 03166-000, Brazil and Instituto de Pesquisas Energéticas e Nucleares (IPEN), Centro de Tecnologia das Radiações (CTR), São Paulo, SP 05508-000, Brazil
³Laboratório de Novos Materiais Semicondutores, Instituto de Física da Universidade de São Paulo, CP 66318, São Paulo, SP 05315-970, Brazil

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(Published online 19 March 2010)

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In the case of quantum wells, the indium segregation leads to complex potential profiles that are hardly considered in the majority of the theoretical models. The authors demonstrated that the split-operator method is useful tool for obtaining the electronic properties in these cases. Particularly, they studied the influence of the indium surface segregation in optical properties of InGaAs/GaAs quantum wells. Photoluminescence measurements were carried out for a set of InGaAs/GaAs quantum wells and compared to the results obtained theoretically via split-operator method, showing a good agreement.

ACKNOWLEDGMENTS

The authors would like to thank the Brazilian funding agencies, Fundação de Amparo Pesquisa do Estado de São Paulo (FAPESP), Conselho Nacional de Pesquisa (CNPq), and the research center of Universidade São Judas Tadeu for partial financial support. The authors also acknowledge Lara Kühl Teles for fruitful discussion.

Article Outline

INTRODUCTION
EXPERIMENT
CALCULATION METHODS
1. Muraki’s segregation model
2. Split-operator method
3. Modeling the influence of the macroscopic strain
RESULTS AND DISCUSSION
CONCLUSIONS

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KEYWORDS and PACS

Keywords

gallium arsenide, III-V semiconductors, indium compounds, optical properties, photoluminescence, semiconductor quantum wells, surface segregation

PACS

68.65.Fg

Quantum wells
68.35.Dv

Composition, segregation; defects and impurities
78.67.De

Quantum wells
78.66.Fd

III-V semiconductors
78.55.Cr

III-V semiconductors
73.61.Ey

III-V semiconductors

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History

Received 22 July 2009
Accepted 4 January 2010
Published online 19 March 2010

Digital Object Identifier

http://dx.doi.org/10.1116/1.3301612

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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