Structural, electrical, and optical characterizations of laser deposited nanometric iron oxide films

Caricato, A. P.; Gorbachuk, N. T.; Korduban, A. M.; Leggieri, G.; Luches, A.; Mengucci, P.; Mulenko, S. A.; Valerini, D.

doi:doi:10.1116/1.3308973

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Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / Regular Articles

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J. Vac. Sci. Technol. B 28, 295 (2010); http://dx.doi.org/10.1116/1.3308973 (6 pages)

Structural, electrical, and optical characterizations of laser deposited nanometric iron oxide films

A. P. Caricato¹, N. T. Gorbachuk², A. M. Korduban³, G. Leggieri¹, A. Luches¹, P. Mengucci⁴, S. A. Mulenko³, and D. Valerini¹

¹Department of Physics, University of Salento, 73100 Lecce, Italy
²Kiev State University of Technology and Design, 03011, Kiev-11, Ukraine
³Institute for Metal Physics, NAS of Ukraine, UA-03142, Kiev-142, Ukraine
⁴Department of Materials and Environment Physics and Engineering, Marche Polytechnic University, 60131 Ancona, Italy

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(Published online 22 March 2010)

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The structural, electrical, and optical characteristics of nanometric Fe₂O_3−x films fabricated on 〈100〉 Si and SiO₂ substrates by ablating an iron target with a KrF excimer laser in low pressure (0.05–1.0 Pa) O₂ atmosphere are reported. The thickness of films fabricated with 4000 laser pulses is ∼ 80 nm for samples deposited at the lowest pressure (0.05 Pa) and decreases gradually to 50 nm at the highest used pressure (1.0 Pa). The film mean composition results close to FeO at lower pressures (0.05–0.10 Pa) and to Fe₂O₃ at higher pressures (0.5–1.0 Pa). From glazing incidence x-ray diffraction spectra, it was inferred that deposits are poorly crystallized, especially the ones prepared at relatively high oxygen pressures (0.5–1.0 Pa). Scanning electron microscopy inspections show that surfaces are plane and uniform, with very rare (<0.1 μm⁻²) submicron droplets. From x-ray reflectivity spectra, surface roughness results very low (0.1–0.5 nm, increasing with O₂ pressure). The films present a semiconductor behavior, with electrical energy gaps increasing from 0.43 to 0.93 eV with increasing O₂ pressure, while the optical energy gap varies from 1.60 eV (0.05 Pa) to 1.74 eV (1.0 Pa). Very high thermoelectromotive force coefficient values were measured (up to 1.65 mV/K). It is also shown that films present promising gas sensing properties.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS
DISCUSSION
CONCLUSIONS

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KEYWORDS and PACS

Keywords

energy gap, iron compounds, nanostructured materials, scanning electron microscopy, semiconductor thin films, surface roughness, thermoelectricity, X-ray diffraction, X-ray reflection

PACS

68.55.-a

Thin film structure and morphology
73.61.Ng

Insulators
78.66.Nk

Insulators
81.16.Mk

Laser-assisted deposition
72.20.Pa

Thermoelectric and thermomagnetic effects
78.70.-g

Interactions of particles and radiation with matter

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History

Received 31 August 2009
Accepted 11 January 2010
Published online 22 March 2010

Digital Object Identifier

http://dx.doi.org/10.1116/1.3308973

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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