Woodpile photonic crystal fabricated in GaAs by two-directional etching method

Tang, Lingling; Yoshie, Tomoyuki

doi:doi:10.1116/1.3308972

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Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / Regular Articles

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J. Vac. Sci. Technol. B 28, 301 (2010); http://dx.doi.org/10.1116/1.3308972 (3 pages)

Woodpile photonic crystal fabricated in GaAs by two-directional etching method

Lingling Tang and Tomoyuki Yoshie

Department of Electrical and Computer Engineering, Fitzpatrick Institute for Photonics, Duke University, Durham, North Carolina 27708-0291

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(Published online 22 March 2010)

Abstract

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Three-dimensional woodpile photonic crystals for 1.55 μm telecommunication wavelength are fabricated in a GaAs wafer by the two-directional etching technique for the first time. Chlorine-based chemically assisted ion beam etching is used for deep anisotropic GaAs etching. High-precision woodpile photonic crystals with 150×150×2.25 unit cells are fabricated in a two-patterning process, which is applicable to the introduction of intentional photonic crystal disorders in epitaxially grown, active materials without wafer bonding process.

ACKNOWLEDGMENTS

The authors acknowledge the National Science Foundation (Grant Nos. CCF-0621862 and ECCS-0901599) for financial support, and the Sumitomo Electric Corporation and Innovation Core SEI Inc. (Akihiro Moto) for high-quality, epitaxially grown wafers.

Article Outline

INTRODUCTION
FABRICATION PROCEDURES AND RESULTS
DISCUSSIONS
CONCLUSIONS

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KEYWORDS and PACS

Keywords

gallium arsenide, III-V semiconductors, photonic crystals, sputter etching, gallium arsenide (GaAs), chromium (Cr), ZEP

PACS

42.70.Qs

Photonic bandgap materials
81.65.Cf

Surface cleaning, etching, patterning
81.05.Ea

III-V semiconductors

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History

Received 26 June 2009
Accepted 11 January 2010
Published online 22 March 2010

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http://dx.doi.org/10.1116/1.3308972

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

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American Vacuum Society

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